ELECTROPLATING SYSTEMS AND METHODS WITH INCREASED METAL ION CONCENTRATIONS

    公开(公告)号:US20230272546A1

    公开(公告)日:2023-08-31

    申请号:US18195021

    申请日:2023-05-09

    CPC classification number: C25D3/38 C25D7/12 C25D17/002 C25D21/14 C25D17/001

    Abstract: Electroplating methods and systems are described that include adding a metal-ion-containing starting solution to a catholyte to increase a metal ion concentration in the catholyte to a first metal ion concentration. The methods and systems further include measuring the metal ion concentration in the catholyte while the metal ions electroplate onto a substrate and the catholyte reaches a second metal ion concentration that is less than the first metal ion concentration. The methods and systems additionally include adding a portion of an anolyte directly to the catholyte when the catholyte reaches the second metal ion concentration. The addition of the portion of the anolyte increases the metal ion concentration in the catholyte to a third metal ion concentration that is greater than or about the first metal ion concentration.

    Post exposure processing apparatus

    公开(公告)号:US11262662B2

    公开(公告)日:2022-03-01

    申请号:US17062326

    申请日:2020-10-02

    Abstract: Implementations described herein relate to a platform apparatus for post exposure processing. In one implementation, a platform apparatus includes a plumbing module and a process module. The process module further includes a central region having a robot disposed therein, and a plurality of process stations disposed about the central region and sharing the plumbing module. Each process station includes a process chamber and a post process chamber in a stacked arrangement. The process chamber includes a chamber body defining a process volume, a door coupled to the chamber body, a first electrode coupled to the door, and a power source communicatively coupled to the first electrode.

    FLUID RECOVERY IN SEMICONDUCTOR PROCESSING

    公开(公告)号:US20210017665A1

    公开(公告)日:2021-01-21

    申请号:US16513434

    申请日:2019-07-16

    Abstract: Cleaning substrates or electroplating system components may include methods of rinsing a substrate at a semiconductor plating chamber. The methods may include moving a head from a plating bath to a first position. The head may include a substrate coupled with the head. The methods may include rotating the head for a first period of time to sling bath fluid back into the plating bath. A residual amount of bath fluid may remain. The methods may include delivering a first fluid to the substrate from a first fluid nozzle to at least partially expel the residual amount of bath fluid back into the plating bath. The methods may include moving the head to a second position. The methods may include rotating the head for a second period of time. The methods may also include delivering a second fluid across the substrate from a second fluid nozzle.

    METHODS FOR CLEANING A WAFER EDGE INCLUDING A NOTCH
    7.
    发明申请
    METHODS FOR CLEANING A WAFER EDGE INCLUDING A NOTCH 审中-公开
    清洁包括倒钩的波形边缘的方法

    公开(公告)号:US20150050752A1

    公开(公告)日:2015-02-19

    申请号:US13967160

    申请日:2013-08-14

    CPC classification number: H01L21/02068 H01L21/02087 H01L21/30604 H01L22/10

    Abstract: In a method for removing metal at the edge of a wafer, including from a notch in the edge of the wafer, water is dripped or otherwise supplied onto the up-facing metal-plated front side of the wafer, while rotating the wafer. A metal etchant, such as sulfuric acid, is provided onto the back side of the wafer, at a flow rate multiple times greater than the water flow rate. The etchant flows over the edge of the wafer and the notch, and onto an annular edge on the front side of the wafer. The metal plated in the notch is removed, even if the notch has a radial depth greater than the width of the exclusion zone. The flow rates of the water and the etchant, and the rotation speed may be adjusted to provide a static water film, with the etchant diffusing into the outer edge of the water film.

    Abstract translation: 在晶片边缘处除去金属的方法中,包括从晶片边缘的凹口,在旋转晶片的同时,将水滴落或以其它方式供给到晶片的面向金属的前面。 将金属蚀刻剂(例如硫酸)以比水流速大多倍的流量提供到晶片的背面。 蚀刻剂流过晶片边缘和凹口,并流到晶片正面的环形边缘上。 即使切口的径向深度大于排除区域的宽度,也可以去除刻在凹口中的金属。 可以调节水和蚀刻剂的流速以及旋转速度以提供静电水膜,其中蚀刻剂扩散到水膜的外边缘。

    PLATING SEAL WITH IMPROVED SURFACE
    9.
    发明公开

    公开(公告)号:US20240337040A1

    公开(公告)日:2024-10-10

    申请号:US18298223

    申请日:2023-04-10

    Inventor: Kyle M. Hanson

    Abstract: The present technology includes monolithic electroplating seals, such as electroplating seals formed utilizing additive manufacturing. Seals include an external seal member and an internal seal member. The external seal member includes an inner annular radius, an outer annular radius, and an external seal member body defined between an exterior surface and an interior surface opposite the exterior surface. The exterior surface is formed from at least one polymer layer having a porosity of less than or about 10 vol. % and the external seal member body includes a filler. The internal seal member is formed integrally with and extends along at least a portion of the interior surface of the external seal member from the inner annular radius towards the outer annular radius. The internal seal member includes a deformable thermoplastic elastomer.

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