公开(公告)号：US20220069174A1

公开(公告)日：2022-03-03

申请号：US17006663

申请日：2020-08-28

Applicant: Applied Materials, Inc

Inventor： Yingdong Luo ,  Lisong Xu ,  Sivapackia Ganapathiappan ,  Hou T. Ng ,  Byung Sung Kwak ,  Mingwei Zhu ,  Nag B. Patibandla

IPC: H01L33/50 ,  H01L33/00

Abstract: A photocurable composition includes a blue photoluminescent material, one or more monomers, and a photoinitiator that initiates polymerization of the one or more monomers in response to absorption of the ultraviolet light. The blue photoluminescent material is selected to absorb ultraviolet light with a maximum wavelength in a range of about 300 nm to about 430 nm and to emit blue light. The blue photoluminescent material also has an emission peak in a range of about 420 nm to about 480 nm. The full width at half maximum of the emission peak is less than 100 nm, and the photoluminescence quantum yield is in a range of 5% to 100%.

公开(公告)号：US11251226B2

公开(公告)日：2022-02-15

申请号：US16908462

申请日：2020-06-22

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Sivapackia Ganapathiappan ,  Boyi Fu ,  Hou T. Ng ,  Nag B. Patibandla

IPC: H01L21/683 ,  H01L21/66 ,  H01L27/15 ,  H01L33/00 ,  H01L23/00 ,  H01L33/48 ,  H01L25/075

Abstract: An apparatus for positioning micro-devices on a substrate includes one or more supports to hold a donor substrate and a destination substrate, an adhesive dispenser to deliver adhesive on micro-devices on the donor substrate, a transfer device including a transfer surface to transfer the micro-devices from the donor substrate to the destination substrate, and a controller. The controller is configured to operate the adhesive dispenser to selectively dispense the adhesive onto selected micro-devices on the donor substrate based on a desired spacing of the selected micro-devices on the destination substrate. The controller is configured to operate the transfer device such that the transfer surface engages the adhesive on the donor substrate to cause the selected micro-devices to adhere to the transfer surface and the transfer surface then transfers the selected micro-devices from the donor substrate to the destination substrate.

公开(公告)号：US20210358742A1

公开(公告)日：2021-11-18

申请号：US17389029

申请日：2021-07-29

Applicant: Applied Materials, Inc.

Inventor： Daihua Zhang ,  Yingdong Luo ,  Mingwei Zhu ,  Hou T. Ng ,  Sivapackia Ganapathiappan ,  Nag B. Patibandla

IPC: H01L21/02 ,  H01L33/50 ,  H01L25/075 ,  H01L33/58 ,  H01L33/62 ,  H01L33/00 ,  H01L21/70 ,  H01L21/027

Abstract: A multi-color display includes a backplane having backplane circuitry, an array of micro-LEDs electrically integrated with backplane circuitry of the backplane, a first color conversion layer over each of a first plurality of light emitting diodes, a second color conversion layer over each of a second plurality of light emitting diodes, and a plurality of isolation walls separating adjacent micro-LEDs of the array. The micro-LEDs of the array are configured to generate illumination of the same wavelength range, the first color conversion layer converts the illumination to light of a first color, and the second color conversion layer converts the illumination to light of a different second color.

公开(公告)号：US11081623B2

公开(公告)日：2021-08-03

申请号：US16721301

申请日：2019-12-19

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC: H01L33/12 ,  H01J37/34 ,  H01L31/18 ,  H01L33/00 ,  H01J37/32 ,  H01L29/20

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

公开(公告)号：US10886155B2

公开(公告)日：2021-01-05

申请号：US16249653

申请日：2019-01-16

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Daniel Lee Diehl ,  Yong Cao ,  Weimin Zeng ,  Renjing Zheng ,  Edward Budiarto ,  Surender Kumar Gurusamy ,  Todd Egan ,  Niranjan R. Khasgiwale

IPC: H01L21/67 ,  H01L21/687 ,  G01N21/21

Abstract: A method and apparatus for forming an optical stack having uniform and accurate layers is provided. A processing tool used to form the optical stack comprises, within an enclosed environment, a first transfer chamber, an on-board metrology unit, and a second transfer chamber. A first plurality of processing chambers is coupled to the first transfer chamber or the second transfer chamber. The on-board metrology unit is disposed between the first transfer chamber and the second transfer chamber. The on-board metrology unit is configured to measure one or more optical properties of the individual layers of the optical stack without exposing the layers to an ambient environment.

公开(公告)号：USD904640S1

公开(公告)日：2020-12-08

申请号：US29677482

申请日：2019-01-21

Applicant: APPLIED MATERIALS, INC.

Designer： Fred Eric Ruhland ,  Sumit S. Patankar ,  Vijay D. Parkhe ,  Daniel Lee Diehl ,  Mingwei Zhu ,  Hiroyuki Takahama ,  Randy D. Schmieding

公开(公告)号：US10692923B2

公开(公告)日：2020-06-23

申请号：US16020692

申请日：2018-06-27

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Sivapackia Ganapathiappan ,  Boyi Fu ,  Hou T. Ng ,  Nag B. Patibandla

IPC: H01L21/66 ,  H01L33/48 ,  H01L27/15 ,  H01L33/00 ,  H01L21/683 ,  H01L23/00 ,  H01L25/075

Abstract: An apparatus for positioning micro-devices on a substrate includes one or more supports to hold a donor substrate and a destination substrate, an adhesive dispenser to deliver adhesive on micro-devices on the donor substrate, a transfer device including a transfer surface to transfer the micro-devices from the donor substrate to the destination substrate, and a controller. The controller is configured to operate the adhesive dispenser to selectively dispense the adhesive onto selected micro-devices on the donor substrate based on a desired spacing of the selected micro-devices on the destination substrate. The controller is configured to operate the transfer device such that the transfer surface engages the adhesive on the donor substrate to cause the selected micro-devices to adhere to the transfer surface and the transfer surface then transfers the selected micro-devices from the donor substrate to the destination substrate.

公开(公告)号：US10236412B2

公开(公告)日：2019-03-19

申请号：US15980583

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC: H01L33/12 ,  H01J37/34 ,  H01L31/18 ,  H01L33/00 ,  H01J37/32 ,  H01L29/20

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

公开(公告)号：US10193014B2

公开(公告)日：2019-01-29

申请号：US14884251

申请日：2015-10-15

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC: H01L33/00 ,  H01L33/12 ,  H01J37/34 ,  H01L31/18 ,  H01J37/32 ,  H01L29/20

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

公开(公告)号：US20180315793A1

公开(公告)日：2018-11-01

申请号：US16020692

申请日：2018-06-27

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Sivapackia Ganapathiappan ,  Boyi Fu ,  Hou T. Ng ,  Nag B. Patibandla

IPC: H01L27/15 ,  H01L23/00 ,  H01L33/48 ,  H01L21/66

Abstract: An apparatus for positioning micro-devices on a substrate includes one or more supports to hold a donor substrate and a destination substrate, an adhesive dispenser to deliver adhesive on micro-devices on the donor substrate, a transfer device including a transfer surface to transfer the micro-devices from the donor substrate to the destination substrate, and a controller. The controller is configured to operate the adhesive dispenser to selectively dispense the adhesive onto selected micro-devices on the donor substrate based on a desired spacing of the selected micro-devices on the destination substrate. The controller is configured to operate the transfer device such that the transfer surface engages the adhesive on the donor substrate to cause the selected micro-devices to adhere to the transfer surface and the transfer surface then transfers the selected micro-devices from the donor substrate to the destination substrate.