公开(公告)号：US20120326244A1

公开(公告)日：2012-12-27

申请号：US13554204

申请日：2012-07-20

申请人： Masamichi SUZUKI ,  Tatsuo Shimizu ,  Atsuhiro Kinoshita

发明人： Masamichi SUZUKI ,  Tatsuo Shimizu ,  Atsuhiro Kinoshita

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L29/785 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823857 ,  H01L28/40 ,  H01L29/517 ,  H01L29/7833 ,  H01L29/7881

摘要： A semiconductor device includes a semiconductor substrate, a source region, a drain region, an insulating film and a gate electrode. The source region is formed in the semiconductor substrate. The drain region is formed in the semiconductor substrate with being separate from the source region. The insulating film is formed between the source region and the drain region and on or above the semiconductor substrate. The insulating film includes lanthanum aluminate containing at least one element selected from Si, Ge, Mg, Ca, Sr, Ba and N. The lanthanum aluminate contains at least one element selected from Ti, Hf and Zr. The gate electrode is formed on the insulating film.

摘要翻译： 半导体器件包括半导体衬底，源极区，漏极区，绝缘膜和栅电极。 源区域形成在半导体衬底中。 漏区形成在半导体衬底中，与源极区分开。 绝缘膜形成在源极区域和漏极区域之间并且在半导体衬底上或上方。 绝缘膜包括含有选自Si，Ge，Mg，Ca，Sr，Ba和N中的至少一种元素的铝酸镧铝。铝酸镧含有选自Ti，Hf和Zr中的至少一种元素。 栅电极形成在绝缘膜上。

公开(公告)号：US08321421B2

公开(公告)日：2012-11-27

申请号：US12888897

申请日：2010-09-23

申请人： Kosuke Tatsumura ,  Atsuhiro Kinoshita

发明人： Kosuke Tatsumura ,  Atsuhiro Kinoshita

IPC分类号： G06F7/00 ,  G06F17/00 ,  G06F17/30

CPC分类号： G06F17/30106 ,  G06F17/30109

摘要： According to one embodiment, a storage device includes an interface, a first and second memory blocks and a controller. The interface receives a content search request. The first memory block stores files and inverted files corresponding to contents included in the files. The second memory block stores a file search table. The controller creates the inverted file for each content included in the files and stores IDs of the files including the content in the inverted file. The controller obtains, by search of the content, a corresponding inverted file from the inverted files stored in the first memory block and stores, in the file search table, the IDs of the files included in the obtained inverted file. The controller outputs the IDs of the files stored in the file search table from the interface as a search result for the content search request.

摘要翻译： 根据一个实施例，存储设备包括接口，第一和第二存储器块以及控制器。 接口接收内容搜索请求。 第一个存储块存储与文件中包含的内容相对应的文件和反转文件。 第二存储器块存储文件搜索表。 控制器为包含在文件中的每个内容创建反转文件，并将包含内容的文件的ID存储在反转文件中。 控制器通过搜索内容，从存储在第一存储器块中的反转文件中获得相应的反转文件，并在文件搜索表中存储所获得的反转文件中包括的文件的ID。 控制器从接口输出存储在文件搜索表中的文件的ID作为内容搜索请求的搜索结果。

公开(公告)号：US20120068254A1

公开(公告)日：2012-03-22

申请号：US13072366

申请日：2011-03-25

申请人： Kiwamu SAKUMA ,  Atsuhiro Kinoshita

发明人： Kiwamu SAKUMA ,  Atsuhiro Kinoshita

IPC分类号： H01L29/792 ,  H01L21/308

CPC分类号： H01L29/792 ,  H01L27/11524 ,  H01L27/11551 ,  H01L29/7881

摘要： According to one embodiment, a memory device includes a semiconductor substrate, first, second, third and fourth fin-type stacked layer structures, each having memory strings stacked in a first direction perpendicular to a surface of the semiconductor substrate, and each extending to a second direction parallel to the surface of the semiconductor substrate, a first part connected to first ends in the second direction of the first and second fin-type stacked layer structures each other, a second part connected to first ends in the second direction of the third and fourth fin-type stacked layer structures each other, a third part connected to second ends in the second direction of the first and third fin-type stacked layer structures each other, and a fourth part connected to second ends in the second direction of the second and fourth fin-type stacked layer structures each other.

摘要翻译： 根据一个实施例，存储器件包括半导体衬底，第一，第二，第三和第四鳍式堆叠层结构，每个具有堆叠在垂直于半导体衬底的表面的第一方向上的存储串，并且每个延伸到 第二方向平行于半导体衬底的表面，第一部分连接到第一和第二鳍式堆叠层的第二方向上的第一端彼此结合，第二部分连接到第三端的第二端 第四鳍状堆叠层结构，第三部分与第一和第三鳍状堆叠层的第二方向的第二端部连接，第四部分与第二鳍片状堆叠层的第二方向的第二端部连接， 第二和第四鳍式堆叠层结构。

公开(公告)号：US07718490B2

公开(公告)日：2010-05-18

申请号：US12318493

申请日：2008-12-30

申请人： Hiroshi Watanabe ,  Atsuhiro Kinoshita ,  Akira Takashima ,  Daisuke Hagishima

发明人： Hiroshi Watanabe ,  Atsuhiro Kinoshita ,  Akira Takashima ,  Daisuke Hagishima

IPC分类号： H01L21/336 ,  H01L29/788

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324

摘要： A nonvolatile semiconductor storage device includes a semiconductor substrate; a plurality of isolation regions formed in the semiconductor substrate; an element-forming region formed between adjacent isolation regions; a first gate insulating film provided on the element-forming region; a floating gate electrode which is provided on the first gate insulating film and in which a width of a lower hem facing the element-forming region is narrower than a width of the element-forming region in a section taken in a direction perpendicular to a direction in which the isolation regions extend; a second gate insulating film provided on the floating gate electrode; and a control gate electrode provided on the second gate insulating film.

摘要翻译： 非易失性半导体存储器件包括半导体衬底; 形成在所述半导体衬底中的多个隔离区; 在相邻隔离区域之间形成的元件形成区域; 设置在元件形成区域上的第一栅极绝缘膜; 设置在第一栅极绝缘膜上并且面向元件形成区域的下边缘的宽度比沿着与方向垂直的方向截取的截面中的元件形成区域的宽度窄的浮栅电极 其中隔离区域延伸; 设置在所述浮栅电极上的第二栅极绝缘膜; 以及设置在第二栅极绝缘膜上的控制栅电极。

公开(公告)号：US07690024B2

公开(公告)日：2010-03-30

申请号：US11350075

申请日：2006-02-09

申请人： Atsuhiro Kinoshita ,  Kazuya Matsuzawa

发明人： Atsuhiro Kinoshita ,  Kazuya Matsuzawa

IPC分类号： G06K19/06 ,  G06F21/00

CPC分类号： H04L63/0853 ,  H04L63/1441 ,  H04W12/06 ,  H04W12/12

摘要： It is made possible to prevent “spoofing” and incur no additional management cost as effectively as possible. An authenticated device includes: at least one authenticated element that generates an output signal with characteristics spontaneously varying, at the time of manufacturing, with respect to a continuous input signal. The characteristics of the authenticated element are used as information unique to an individual.

摘要翻译： 有可能防止“欺骗”，并且不会有效地增加管理成本。 认证设备包括：至少一个认证元件，其在制造时产生具有相对于连续输入信号自发变化的特性的输出信号。 被认证的元素的特征被用作个体唯一的信息。

公开(公告)号：US20090186474A1

公开(公告)日：2009-07-23

申请号：US12318493

申请日：2008-12-30

申请人： Hiroshi Watanabe ,  Atsuhiro Kinoshita ,  Akira Takashima ,  Daisuke Hagishima

发明人： Hiroshi Watanabe ,  Atsuhiro Kinoshita ,  Akira Takashima ,  Daisuke Hagishima

IPC分类号： H01L21/302

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324

摘要： A nonvolatile semiconductor storage device includes a semiconductor substrate; a plurality of isolation regions formed in the semiconductor substrate; an element-forming region formed between adjacent isolation regions; a first gate insulating film provided on the element-forming region; a floating gate electrode which is provided on the first gate insulating film and in which a width of a lower hem facing the element-forming region is narrower than a width of the element-forming region in a section taken in a direction perpendicular to a direction in which the isolation regions extend; a second gate insulating film provided on the floating gate electrode; and a control gate electrode provided on the second gate insulating film.

公开(公告)号：US20090083202A1

公开(公告)日：2009-03-26

申请号：US12211739

申请日：2008-09-16

申请人： CHIKA TANAKA ,  Atsuhiro Kinoshita

发明人： CHIKA TANAKA ,  Atsuhiro Kinoshita

IPC分类号： G06N3/06 ,  G11C16/04 ,  G06F21/00 ,  G11C16/06

CPC分类号： G06N3/063 ,  G11C16/22 ,  G11C27/005

摘要： A semiconductor storage device includes a storage part including a plurality of nonvolatile semiconductor memory cells each having a conductive path, a charge storage layer and a control gate electrode. The device further includes a plurality of first input terminals each connected to one end of the conductive path of each nonvolatile semiconductor memory cell, a plurality of second input terminals each connected to the control gate of each nonvolatile semiconductor memory cell, and an output end connected to the other ends of the conductive paths of the plurality of nonvolatile semiconductor memory cells, respectively.

摘要翻译： 一种半导体存储装置，包括具有导电路径的多个非易失性半导体存储单元，电荷存储层和控制栅电极的存储部。 该装置还包括多个第一输入端子，每个第一输入端子连接到每个非易失性半导体存储单元的导电路径的一端，多个第二输入端子，每个第二输入端子连接到每个非易失性半导体存储器单元的控制栅极，并且输出端连接 分别连接到多个非易失性半导体存储单元的导电路径的另一端。

公开(公告)号：US20070247906A1

公开(公告)日：2007-10-25

申请号：US11723335

申请日：2007-03-19

申请人： Hiroshi Watanabe ,  Yoshifumi Nishi ,  Atsuhiro Kinoshita

发明人： Hiroshi Watanabe ,  Yoshifumi Nishi ,  Atsuhiro Kinoshita

IPC分类号： G11C16/04

CPC分类号： G11C16/0483 ,  H01L27/115 ,  H01L27/11519 ,  H01L29/785

摘要： A Fin-type memory cell according to an example of the present invention includes a fin-shaped active area, a floating gate along a side surface of the fin-shaped active area, and two control gate electrodes arranged in a longitudinal direction of the fin-shaped active area, and sandwiching the floating gate.

摘要翻译： 根据本发明的实施例的鳍型存储单元包括鳍状有源区域，沿着鳍状有源区域的侧表面的浮置栅极和沿翅片的纵向布置的两个控制栅极电极 形状的活动区域，并夹着浮动门。

公开(公告)号：US20070052031A1

公开(公告)日：2007-03-08

申请号：US11404075

申请日：2006-04-14

申请人： Atsuhiro Kinoshita

发明人： Atsuhiro Kinoshita

IPC分类号： H01L23/62

CPC分类号： H01L27/0251 ,  H01L29/665 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is made possible to easily set a protection voltage even when a semiconductor device to be protected includes a gate insulating film having a low dielectric breakdown voltage. A semiconductor device includes: a MOS transistor including a first gate insulating film provided on a first element region of first conductivity-type in a semiconductor, a first gate electrode provided on the first gate insulating film, and first impurity regions of second conductivity-type provided in the first element region on both sides of the first gate electrode; and an ESD protection element including a second gate insulating film provided on a second element region of first conductivity-type in the semiconductor substrate and having substantially the same thickness as the first gate insulating film, a second gate electrode provided on the second gate insulating film and connected to the first gate electrode, and second impurity regions of second conductivity-type provided in the second element region on both sides of the second gate electrode.

摘要翻译： 即使要被保护的半导体器件包括具有低介电击穿电压的栅极绝缘膜，也可以容易地设定保护电压。 半导体器件包括：MOS晶体管，包括设置在半导体中的第一导电类型的第一元件区域上的第一栅极绝缘膜，设置在第一栅极绝缘膜上的第一栅极电极和第二导电类型的第一杂质区域 设置在所述第一栅电极的两侧的所述第一元件区域中; 以及ESD保护元件，包括设置在半导体衬底中的第一导电类型的第二元件区上并具有与第一栅极绝缘膜基本相同的厚度的第二栅极绝缘膜，设置在第二栅极绝缘膜上的第二栅电极 并且连接到第一栅电极，以及设置在第二栅电极两侧的第二元件区中的第二导电类型的第二杂质区。

公开(公告)号：US09262500B2

公开(公告)日：2016-02-16

申请号：US13569542

申请日：2012-08-08

申请人： Atsuhiro Kinoshita ,  Takao Marukame ,  Kosuke Tatsumura

发明人： Atsuhiro Kinoshita ,  Takao Marukame ,  Kosuke Tatsumura

IPC分类号： G06F17/30 ,  G06F12/02

CPC分类号： G06F17/30587 ,  G06F12/0292

摘要： According to one embodiment, a memory system including a key-value store containing key-value data as a pair of a key and a value corresponding to the key, includes a first memory, a control circuit and a second memory. The first memory is configured to contain a data area for storing data, and a table area containing the key-value data. The control circuit is configured to perform write and read to the first memory by addressing, and execute a request based on the key-value store. The second memory is configured to store the key-value data in accordance with an instruction from the control circuit. The control circuit performs a set operation by using the key-value data stored in the first memory, and the key-value data stored in the second memory.

摘要翻译： 根据一个实施例，包括包含键值数据作为一对键和与该键对应的值的键值存储器的存储器系统包括第一存储器，控制电路和第二存储器。 第一存储器被配置为包含用于存储数据的数据区域和包含键值数据的表区域。 控制电路被配置为通过寻址来执行对第一存储器的写入和读取，并且基于键值存储执行请求。 第二存储器被配置为根据来自控制电路的指令存储键值数据。 控制电路通过使用存储在第一存储器中的键值数据和存储在第二存储器中的键值数据来执行设置操作。