公开(公告)号：US20100163887A1

公开(公告)日：2010-07-01

申请号：US12623990

申请日：2009-11-23

申请人： Kwang Choong KIM ,  Won Cheol Seo ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

发明人： Kwang Choong KIM ,  Won Cheol Seo ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.

摘要翻译： 本发明涉及具有多个非极性发光单元的发光器件及其制造方法。 氮化物半导体层设置在具有上表面的氮化镓衬底上。 上表面是非极性或半极性的晶体，相对于c面形成交叉角。 氮化物半导体层可以被图案化以形成彼此分离的发光单元。 当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。 凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

公开(公告)号：US20100123119A1

公开(公告)日：2010-05-20

申请号：US12620218

申请日：2009-11-17

申请人： Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye ,  Hong Jae Yoo

发明人： Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye ,  Hong Jae Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L33/32

摘要： The present invention relates to a light emitting diode (LED) including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, and an active region interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The active region may include an InGaN quantum well layer. The LED may further include a super lattice layer interposed between the n-type nitride semiconductor layer and the active region. The super lattice layer may be a structure wherein InN layers and InxGa1-xN (0≦x

摘要翻译： 本发明涉及包括n型氮化物半导体层，p型氮化物半导体层和介于n型氮化物半导体层和p型氮化物半导体层之间的有源区的发光二极管（LED） 。 有源区可以包括InGaN量子阱层。 LED还可以包括插入在n型氮化物半导体层和有源区之间的超晶格层。 超晶格层可以是其中InN层和In x Ga 1-x N（0＆lt; lE; x <1）层交替堆叠的结构。 可以在InGaN / In x Ga 1-x N超晶格层上形成有源层，从而可以在有源区中释放应变，从而可以改善量子阱的结晶度，从而增加电子 - 空穴复合速率。

公开(公告)号：US20090109151A1

公开(公告)日：2009-04-30

申请号：US12174054

申请日：2008-07-16

申请人： Dae Won Kim ,  Dae Sung Kal

发明人： Dae Won Kim ,  Dae Sung Kal

IPC分类号： G09G3/00

CPC分类号： H01L25/0753 ,  H01L27/153 ,  H01L2224/48137 ,  H01L2224/49107

摘要： A light emitting diode (LED) package includes a first serial array of light emitting cells formed on a first substrate to emit light of a relatively short wavelength, and a second serial array of light emitting cells formed on a second substrate to emit light of a relatively long wavelength. The first and second serial arrays are connected to in reverse parallel. The LED package is capable of being operated under AC power and emitting white light with excellent color reproduction characteristics and luminous efficiency.

摘要翻译： 发光二极管（LED）封装包括形成在第一基板上以发射相对较短波长的光的发光单元的第一串联阵列，以及形成在第二基板上的发光单元的第二串联阵列，以发射 波长较长。 第一和第二串行数组以反向并行连接。 LED封装能够在交流电源下运行，并发出白光，具有出色的色彩再现特性和发光效率。

公开(公告)号：US20090045430A1

公开(公告)日：2009-02-19

申请号：US12094206

申请日：2006-11-21

申请人： Tae Won Seo ,  Zhbanov Alexander ,  Dae Won Kim

发明人： Tae Won Seo ,  Zhbanov Alexander ,  Dae Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L24/45 ,  H01L24/48 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/01013 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A heat radiation structure of a light emitting element has leads, each lead having a plurality of leg sections, and a light emitting chip mounted on any one of the leads. The present invention can provide a high-efficiency light emitting element, in which a thermal load is reduced by widening a connecting section through which a lead and a chip seating section of the light emitting element are connected, and the heat generated from a heat source can be more rapidly radiated to the outside. Further, the present invention can also provide a high-efficiency light emitting element, in which heat radiation fins are formed between a stopper and a molding portion of a lead of the light emitting element so that natural convection can occur between the heat radiation fins, and an area in which heat radiation can occur is widened to maximize a heat radiation effect.

摘要翻译： 发光元件的散热结构具有引线，每个引线具有多个支脚部分，以及安装在任一导线上的发光芯片。 本发明可以提供一种高效率的发光元件，其中通过加宽连接发光元件的引线和芯片安置部分的连接部分以及从热源产生的热量来减少热负荷 可以更快地辐射到外面。 此外，本发明还可以提供一种高效率的发光元件，其中在止动器和发光元件的引线的成型部分之间形成散热片，使得在散热片之间可能发生自然对流， 并且可以发生可以发生热辐射的区域，以使散热效果最大化。