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114 条记录 (耗时 0.034 秒)

    Method for the deposition of a ruthenium containing film
    81.
    发明授权
    Method for the deposition of a ruthenium containing film 有权
    沉积含钌膜的方法

    公开(公告)号：US08404306B2

    公开(公告)日：2013-03-26

    申请号：US11909399

    申请日：2006-09-22

    申请人： Christian Dussarrat ,  Julien Gatineau

    发明人： Christian Dussarrat ,  Julien Gatineau

    IPC分类号： C23C16/16

    CPC分类号： H01L21/02175 ,  C23C16/18 ,  C23C16/406

    摘要： The invention concerns the use of the ruthenium containing precursor having the formula (Rn-chd)Ru(CO)3, wherein: (Rn-chd) represents a cyclohexadiene (chd) ligand substituted with n substituents R, any R being in any position on the chd ligand; n is an integer comprised between 1 and 8 (1≦n≦8) and represents the number of substituents on the chd ligand; R is selected from the group consisting of C1-C4 linear or branched alkyls, alkylamides, alkoxides, alkylsilylamides, amidinates, carbonyl and/or fluoroalkyl for R being located in any of the eight available position on the chd ligand, while R can also be oxygen O for substitution on the C positions in the chd cycle which are not involved in a double bond for the deposition of a Ru containing film on a substrate.

    摘要翻译： 本发明涉及具有式（Rn-chd）Ru（CO）3的含钌前体的用途，其中：（Rn-chd）表示被n个取代基R取代的环己二烯（chd）配体，任何R都在任何位置 在chd配体上; n是1至8（1＆nlE; n＆nlE; 8）之间的整数，并表示chd配体上的取代基数; R选自C1-C4直链或支链烷基，烷基酰胺，烷氧基化物，烷基甲硅烷基酰胺，脒基，羰基和/或氟烷基，其中R位于chd配体上的八个可用位置中的任一个中，而R也可以是 用于在chd循环中的C位置上用于在基底上沉积含Ru膜的双键中的氧气。

    Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof
    83.
    发明授权
    Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof 有权
    包含化合物的pentakis（二甲基氨基）乙硅烷前体及其制备方法

    公开(公告)号：US08153832B2

    公开(公告)日：2012-04-10

    申请号：US12295902

    申请日：2006-04-03

    申请人： Christian Dussarrat

    发明人： Christian Dussarrat

    IPC分类号： C07F7/10 ,  C07F7/12

    CPC分类号： C07F7/10 ,  C07F7/12

    摘要： Pentakis(dimethylamino) disilane with general formula (1): Si2(NMe2)5Y, where Y is selected from the group comprising H, Cl or an amino group its preparation method and its use to manufacture gate dielectric films or etch-stop dielectric films of SiN or SiON.

    摘要翻译： 具有通式（1）的Pentakis（二甲基氨基）乙硅烷：Si2（NMe2）5Y，其中Y选自H，Cl或氨基，其制备方法及其制备栅极介电膜或蚀刻停止介电膜的用途 的SiN或SiON。

    Heteroleptic Iridium Precursors To Be Used For The Deposition Of Iridium-Containing Films
    86.
    发明申请
    Heteroleptic Iridium Precursors To Be Used For The Deposition Of Iridium-Containing Films 有权
    用于沉积含铱膜的异铱铱前体

    公开(公告)号：US20090258144A1

    公开(公告)日：2009-10-15

    申请号：US12424265

    申请日：2009-04-15

    申请人： Julien Gatineau ,  Christian Dussarrat

    发明人： Julien Gatineau ,  Christian Dussarrat

    IPC分类号： C23C16/18 ,  C07F15/00

    CPC分类号： C07F17/02 ,  C23C16/18 ,  C23C16/45553

    摘要： The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: XIrYA, wherein A is equal to 1 or 2 and i) when A is 1, X is a dienyl ligand and Y is a diene ligand; ii) when A is 2, a) X is a dienyl ligand and Y is selected from CO and an ethylene ligand, b) X is a ligand selected from H, alkyl, alkylamides, alkoxides, alkylsilyls, alkylsilylamides, alkylamino, and fluoroalkyl and each Y is a diene ligand, and c) X is a dienyl ligand and Y is a diene ligand; reacting the at least one iridium containing precursor in the reactor at a temperature equal to or greater than 100° C.; and depositing an iridium containing film formed from the reaction of the at least one iridium containing precursor onto the at least one substrate.

    摘要翻译： 本发明提供了一种用于在基材上沉积含铱膜的方法，该方法包括以下步骤：在反应器中提供至少一个基材; 将具有下式的至少一种含有铱的前体引入反应器中：其中A等于1或2，i）当A为1时，X为二烯基配体，Y为二烯配体; ii）当A为2时，a）X为二烯基配体，Y选自CO和乙烯配体，b）X为选自H，烷基，烷基酰胺，烷氧基化物，烷基甲硅烷基，烷基甲硅烷基酰胺，烷基氨基和氟代烷基的配体，以及 每个Y是二烯配体，和c）X是二烯基配体，Y是二烯配体; 在等于或大于100℃的温度下使反应器中的至少一种含铱前体反应; 以及将由所述至少一种含铱前体的反应形成的含铱膜沉积在所述至少一个基底上。

    METHOD OF FORMING SILICON OXIDE CONTAINING FILMS
    87.
    发明申请
    METHOD OF FORMING SILICON OXIDE CONTAINING FILMS 有权
    形成含氧化硅膜的方法

    公开(公告)号：US20090232985A1

    公开(公告)日：2009-09-17

    申请号：US11908707

    申请日：2006-03-17

    申请人： Christian Dussarrat ,  Julien Gatineau ,  Kazutaka Yanagita ,  Eri Tsukada ,  Ikuo Suzuki

    发明人： Christian Dussarrat ,  Julien Gatineau ,  Kazutaka Yanagita ,  Eri Tsukada ,  Ikuo Suzuki

    IPC分类号： C23C16/40 ,  C23C16/455

    CPC分类号： H01L21/02164 ,  C23C16/402 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/31612

    摘要： A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 4000 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.

    摘要翻译： 一种形成氧化硅膜的方法，包括以下步骤： - 在反应室内提供处理衬底; 通过在50至4000℃的基板温度下在减压下将惰性气体进料到反应室中，在相同的温度和减压下，通过脉冲式在处理基板上吸收硅化合物 将气态硅化合物引入反应室中，在相同的温度和减压下，用惰性气体在相同的温度和减压下，将反应室中的未吸附的硅化合物， 含臭氧的混合气体进入反应室，并与吸附在处理基板上的硅化合物进行氧化反应而生成氧化硅; 并重复步骤1）至4），如果需要在基底上获得所需的厚度。

    NEW METAL PRECURSORS CONTAINING BETA-DIKETIMINATO LIGANDS
    88.
    发明申请
    NEW METAL PRECURSORS CONTAINING BETA-DIKETIMINATO LIGANDS 有权
    包含BETA-DIKETIMINATO LIGANDS的新金属前驱物

    公开(公告)号：US20090197411A1

    公开(公告)日：2009-08-06

    申请号：US12364298

    申请日：2009-02-02

    申请人： Christian Dussarrat ,  Benjamin J. Feist

    发明人： Christian Dussarrat ,  Benjamin J. Feist

    IPC分类号： H01L21/3205 ,  C07F15/04

    CPC分类号： C23C16/18 ,  C07C251/08 ,  C23C16/406 ,  H01L21/32051

    摘要： Methods and compositions for depositing a metal containing thin film on a substrate comprises introducing a vapor phase metal-organic precursor into a reaction chamber containing one or more substrates. The precursor has at least one β-diketiminato ligand, and has the general formula: M(R1C(NR4)CR2C(NR5)R3)2Ln wherein M is a metal selected from nickel, cobalt, ruthenium, iridium, palladium, platinum, silver and gold. Each of R1-5 is an organic ligand independently selected from H; and a C1-C4 linear or branched, alky group, alkylsilyl group, alkylamide group, alkoxide group, or alkylsilylamide group. Each L is independently selected from: a hydrocarbon; an oxygen-containing hydrocarbon; an amine; a polyamine; a bipyridine; an oxygen containing heterocycle; a nitrogen containing heterocycle; and combinations thereof; and n is an integer ranging from 0 to 4, inclusive.A metal containing film is deposited onto the substrate, while the substrate is maintained at a temperature between about 100° C. and about 500° C.

    摘要翻译： 在基材上沉积含金属薄膜的方法和组合物包括将气相金属有机前体引入含有一个或多个基材的反应室中。 前体具有至少一个β-二酮亚胺配体，具有以下通式：<？in-line-formula description =“In-line formula”end =“lead”？> M（R1C（NR4）CR2C（NR5）R3 ）2Ln <？in-line-formula description =“In-line Formulas”end =“tail”？>其中M是选自镍，钴，钌，铱，钯，铂，银和金的金属。 R1-5中的每一个是独立地选自H的有机配体; 和C 1 -C 4直链或支链烷基，烷基甲硅烷基，烷基酰胺基，烷氧基或烷基甲硅烷基酰胺基。 每个L独立地选自：烃; 含氧烃; 胺; 多胺 联吡啶 含氧杂环; 含氮杂环; 及其组合; n为0〜4的整数。 将含金属的膜沉积在基底上，同时将基底保持在约100℃至约500℃的温度。