DEHUMIDIFYING APPARATUS FOR DRYER
    81.
    发明申请
    DEHUMIDIFYING APPARATUS FOR DRYER 审中-公开
    干燥器除湿装置

    公开(公告)号:US20140165417A1

    公开(公告)日:2014-06-19

    申请号:US14186419

    申请日:2014-02-21

    IPC分类号: F26B21/08

    摘要: A dehumidifying apparatus for a dryer is provided that includes a case, a drum disposed inside the case that receives objects to be dried therein, and a hot air supplier that supplies hot air into the drum and dries the objects to be dried. The dehumidifying apparatus includes a heat exchanger that heat exchanges with air flowing from the drum, and an injection nozzle portion disposed between the hot air supplier and the heat exchanger so as to inject a certain jet. When gas introduced into the dehumidifying apparatus from the drum passes through the jet, foreign substances such as lint, contained in the gas may be separated, thereby preventing accumulation of the foreign substances on the dehumidifying apparatus.

    摘要翻译: 提供了一种用于干燥器的除湿装置,其包括壳体,设置在壳体内的容纳待干燥物体的滚筒,以及将热空气供应到滚筒中并干燥待干燥物体的热空气供应器。 除湿装置包括:热交换器,其与从所述滚筒流出的空气进行热交换,以及设置在所述热空气供给器和所述热交换器之间的喷嘴部,以喷射一定的射流。 当从滚筒引入除湿装置的气体通过射流时,包含在气体中的诸如棉绒的异物可能被分离,从而防止异物积聚在除湿装置上。

    Method for fabricating semiconductor device
    83.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US08324109B2

    公开(公告)日:2012-12-04

    申请号:US12642496

    申请日:2009-12-18

    IPC分类号: H01L21/302 H01L21/461

    摘要: A method for fabricating a semiconductor device includes forming a gate insulation layer over a substrate, sequentially forming a silicon layer and a metal layer over the gate insulation layer, performing a first gate etching process to etch the metal layer using a gate hard mask layer, formed on the metal layer, as an etch barrier, and then partially etch the silicon layer, thereby forming a first pattern, performing a second gate etching process to partially etch the silicon layer, thereby forming an undercut beneath the metal layer, forming a capping layer on both sidewalls of the first pattern including the undercut, performing a third gate etching process to etch the silicon layer to expose the gate insulation layer using the gate hard mask layer and the capping layer as an etch barrier, thereby forming a second pattern, and performing a gate re-oxidation process.

    摘要翻译: 一种制造半导体器件的方法包括在衬底上形成栅极绝缘层,在栅极绝缘层上依次形成硅层和金属层,执行第一栅极蚀刻工艺以使用栅极硬掩模层来蚀刻金属层, 形成在金属层上,作为蚀刻阻挡层,然后部分地蚀刻硅层,由此形成第一图案,执行第二栅极蚀刻工艺以部分蚀刻硅层,从而在金属层下方形成底切,形成封盖 在包括底切的第一图案的两个侧壁上,执行第三栅极蚀刻工艺以蚀刻硅层,以使用栅极硬掩模层和封盖层作为蚀刻阻挡层来露出栅极绝缘层,从而形成第二图案, 并进行栅极再氧化处理。

    Semiconductor Device and Method of Manufacturing the Same
    84.
    发明申请
    Semiconductor Device and Method of Manufacturing the Same 有权
    半导体器件及其制造方法

    公开(公告)号:US20120252187A1

    公开(公告)日:2012-10-04

    申请号:US13422487

    申请日:2012-03-16

    摘要: A method of manufacturing the semiconductor device includes sequentially forming first to third mold layer patterns on a substrate and spaced apart from each other , forming a first semiconductor pattern between the first mold layer pattern and the second mold layer pattern, and a second semiconductor pattern between the second mold layer pattern and the third mold layer pattern, forming a first trench between the first mold layer pattern and the third mold layer pattern by removing a portion of the second mold layer pattern and portions of the first and second semiconductor patterns, depositing a material for a lower electrode conformally along side and bottom surfaces of the first trench, and forming first and second lower electrodes separated from each other on the first and second semiconductor patterns, respectively, by removing a portion of the material for a lower electrode positioned on the second mold layer pattern.

    摘要翻译: 制造半导体器件的方法包括在基片上依次形成第一至第三模层图案并彼此分开,在第一模层图案和第二模层图案之间形成第一半导体图案,以及第二半导体图案, 第二模层图案和第三模层图案,通过去除第二模层图案的一部分和第一和第二半导体图案的部分,在第一模层图案和第三模层图案之间形成第一沟槽, 用于下电极的材料沿着第一沟槽的侧表面和底表面共形地形成,并且通过移除位于第一和第二半导体图案上的下电极的材料的一部分,分别形成在第一和第二半导体图案上彼此分离的第一和第二下电极 第二模层图案。

    Apparatus for photographing pipe without suspension of water supply and system for controlling the same
    85.
    发明授权
    Apparatus for photographing pipe without suspension of water supply and system for controlling the same 失效
    用于摄影管道的设备,而不会停止供水和用于控制供水的系统

    公开(公告)号:US08279278B2

    公开(公告)日:2012-10-02

    申请号:US12054926

    申请日:2008-03-25

    IPC分类号: H04N7/18

    CPC分类号: G03B17/00

    摘要: An apparatus for photographing a pipe without suspension of water supply and a system for controlling the same are disclosed. According to present invention, the interior of the pipe can be photographed by inserting the camera into the pipe and moving and rotating the camera without halting water supply, and information about the movement and rotation of the camera can be produced. A problem of discontinuance of using the whole pipe due to photographing of the interior of the pipe can be prevented. The camera can accurately photograph respective portions in the pipe by precisely moving forward/backward and rotating left/right or up/down. Since information about a practical position in the pipe with respect to the photographed image is provided, a user can accurately grasp a defect-position in the pipe, and can easily control the camera.

    摘要翻译: 公开了一种用于摄影管道而不中断供水的装置和用于控制供水的系统。 根据本发明,可以通过将照相机插入管中并移动和旋转相机而不停止供水来管理管道的内部,并且可以产生关于照相机的移动和旋转的信息。 可以防止由于管道内部的拍摄而使整个管子中断的问题。 相机可以通过精确地向前/向后移动左右旋转或上/下精确地拍摄管道中的各个部分。 由于提供了关于管道中相对于拍摄图像的实际位置的信息,用户可以准确地掌握管道中的缺陷位置,并且可以容易地控制照相机。

    Plasma display device and driving method thereof
    86.
    发明授权
    Plasma display device and driving method thereof 失效
    等离子体显示装置及其驱动方法

    公开(公告)号:US08125413B2

    公开(公告)日:2012-02-28

    申请号:US11984305

    申请日:2007-11-15

    申请人: Dong-Hyun Kim

    发明人: Dong-Hyun Kim

    IPC分类号: G09G3/28

    摘要: A plasma display device and a method for driving the plasma display device capable of reducing noise. The plasma display device displays images using a plurality of discharge cells, and is constructed with a plurality of first electrodes, a plurality of second electrodes, and a plurality of third electrodes intersecting the first electrodes and second electrodes. The driving method of the plasma display device includes: initializing the plurality of discharge cells; selecting light-emission cells among the plurality of discharge cells; and discharging the light-emission cells by supplying the first electrodes of the light-emission cells with first sustain pulses whose periods are irregular and supplying the second electrodes with second sustain pulses whose periods are irregular and are alternative to the first sustain pulses. A rising period of a sustain pulse supplied to one of the first and second electrodes at least partially overlaps a falling period of a sustain pulse supplied to the other of the first and second electrodes.

    摘要翻译: 一种等离子体显示装置和用于驱动能够降低噪声的等离子体显示装置的方法。 等离子体显示装置使用多个放电单元显示图像,并且构造有多个第一电极,多个第二电极和与第一电极和第二电极相交的多个第三电极。 等离子体显示装置的驱动方法包括:初始化多个放电单元; 选择所述多个放电单元中的发光单元; 并且通过向发光单元的第一电极提供周期不规则的第一维持脉冲,并且向第二电极提供具有不规则周期的第二维持脉冲并且替代第一维持脉冲,来对发光单元进行放电。 提供给第一和第二电极之一的维持脉冲的上升周期至少部分地与提供给第一和第二电极中的另一个的维持脉冲的下降周期重叠。

    MANUFACTURING METHOD OF 3D SHAPE STRUCTURE HAVING HYDROPHOBIC EXTERNAL SURFACE
    87.
    发明申请
    MANUFACTURING METHOD OF 3D SHAPE STRUCTURE HAVING HYDROPHOBIC EXTERNAL SURFACE 有权
    具有疏水性外表面的三维造型结构的制造方法

    公开(公告)号:US20100252525A1

    公开(公告)日:2010-10-07

    申请号:US12741058

    申请日:2008-03-12

    IPC分类号: C23F1/00

    摘要: The present invention relates to a three-dimensional structure manufacturing method for performing surface treatment processes, and a replication step to provide hydrophobicity on an external surface of the three-dimensional structure. In the manufacturing method, the hydrophobicity may be provided to the external surface of the three-dimensional structure, a high cost device required in the conventional MEMS process is not used, the manufacturing cost is reduced, and the manufacturing process is simplified. In addition, it has been difficult to provide the hydrophobicity on an external surface of a three-dimensional structure having a large surface due to a spatial limitation, but in the exemplary embodiment of the present invention, the hydrophobicity may be provided to the external surface of the three-dimensional structure having a large surface, such as a torpedo, a submarine, a ship, and a vehicle, without the spatial limitation.

    摘要翻译: 本发明涉及一种用于进行表面处理工艺的三维结构制造方法以及在三维结构的外表面上提供疏水性的复制步骤。 在制造方法中,可以将疏水性提供给三维结构的外表面,不使用常规MEMS工艺中所需的高成本装置,制造成本降低,制造工艺简化。 此外,由于空间限制,难以在具有大表面的三维结构的外表面上提供疏水性,但是在本发明的示例性实施方案中,可以将疏水性提供给外表面 的具有大表面的三维结构,例如鱼雷,潜艇,船舶和车辆,没有空间限制。

    VIRTUAL MEASURING DEVICE AND METHOD
    89.
    发明申请
    VIRTUAL MEASURING DEVICE AND METHOD 有权
    虚拟测量装置和方法

    公开(公告)号:US20090307163A1

    公开(公告)日:2009-12-10

    申请号:US12354356

    申请日:2009-01-15

    摘要: A virtual measuring device and a method for measuring the deposition thickness of amorphous silicon being deposited on a substrate is disclosed, where the method of measuring the deposition thickness of amorphous silicon includes predicting and adapting operations. In the predicting operation, during a process of depositing the amorphous silicon to a substrate, the deposition thickness is predicted by multiplying a predicted deposition speed to a deposition time by using a prediction model expressing a relationship between a deposition speed and a plurality of process factors that are correlated with the deposition speed obtained from the deposition thickness and the deposition time, and the predicted deposition thickness is compared with the measured deposition thickness, so that the relationship between the plurality of process factors and the deposition speed in the prediction model is compensated according to the comparison difference.

    摘要翻译: 公开了一种用于测量沉积在衬底上的非晶硅的沉积厚度的虚拟测量装置和方法,其中测量非晶硅的沉积厚度的方法包括预测和适应操作。 在预测操作中,在将非晶硅沉积到衬底的过程中,通过使用表示沉积速度和多个工艺因素之间的关系的预测模型将预测的沉积速度乘以沉积时间来预测沉积厚度 与从沉积厚度和沉积时间获得的沉积速度相关联,并将预测的沉积厚度与测量的沉积厚度进行比较,使得多个工艺因素之间的关系和预测模型中的沉积速度被补偿 根据比较差异。

    METHOD FOR FABRICATING SOLID BODY HAVING SUPERHYDROPHOBIC SURFACE STRUCTURE AND SUPERHYDROPHOBIC TUBE USING THE SAME METHOD
    90.
    发明申请
    METHOD FOR FABRICATING SOLID BODY HAVING SUPERHYDROPHOBIC SURFACE STRUCTURE AND SUPERHYDROPHOBIC TUBE USING THE SAME METHOD 有权
    使用相同方法制造具有超级表面结构的固体和超级疏水管的方法

    公开(公告)号:US20090260702A1

    公开(公告)日:2009-10-22

    申请号:US12442321

    申请日:2007-09-19

    IPC分类号: F16L9/00 C23C28/00

    CPC分类号: B29C33/52

    摘要: The present invention relates to a method for manufacturing a solid body having a superhydrophobic surface structure formed by using a surface treatment of a metal body, a replication process, and a polymer sticking phenomenon to increase efficiency of fluid transfer and prevent foreign materials from being accumulated in the tube, and a superhydrophobic fluid transfer tube using the method. The superhydrophobic fluid transfer tube includes a fluid guider and a solid body provided on a fluid contact surface of the fluid guider and has micrometer-scaled unevenness and nanometer-scaled protrusions. In the method, a plurality of nanometer-scaled holes are formed on a surface of a metal body through an anodizing process, a replica is formed by immersing the metal body provided with the nanometer-scaled holes in a non-wetting polymer material and solidifying the non-wetting polymer material, the solid body having the superhydrophobic surface is formed by removing the metal body and an anode oxide from the replica, and the solid body is provided to a fluid contact surface of a fluid guider for guiding a fluid.

    摘要翻译: 本发明涉及通过使用金属体的表面处理形成的具有超疏水性表面结构的固体的制造方法,复制工序和聚合物粘贴现象,以提高流体转移的效率,防止异物的累积 在管中,以及使用该方法的超疏水流体输送管。 超疏水流体输送管包括流体引导器和设置在流体引导器的流体接触表面上的实心体,并且具有微米级的凹凸和纳米级的突起。 在该方法中,通过阳极氧化处理在金属体的表面上形成多个纳米级的孔,通过将设置有纳米级孔的金属体浸渍在非湿润性聚合物材料中并固化而形成复制品 通过从复制品中除去金属体和阳极氧化物形成具有超疏水表面的固体,并且将固体提供到用于引导流体的流体导向器的流体接触表面。