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81.发明授权Process for treating a lithographic substrate and a rinse solution for the treatment 失效用于处理平版印刷基材和用于处理的冲洗溶液的方法
公开(公告)号：US5968848A
公开(公告)日：1999-10-19
申请号：US998378
申请日：1997-12-24
IPC分类号： G03F7/42 , H01L21/02 , H01L21/306 , H01L21/3213 , B08B3/08
CPC分类号： H01L21/02071 , G03F7/423 , G03F7/425 , H01L21/02052 , Y10S438/906
摘要： This invention relates to a process for rinsing a substrate which has been provided with a desired resist pattern and subjected to an etching treatment, and optionally, subsequent ashing treatment, said process including the steps of: (I) treating said resist pattern with a remover solution which contains, as a principal ingredient, a salt of hydrofluoric acid and a metallic-ion-free base; (II) rinsing said substrate with a rinse solution for lithography which contains ethylene glycol and/or propylene glycol, and a water-soluble organic solvent other than said glycol; and (III) washing said substrate with water.
摘要翻译： 本发明涉及一种漂洗已经提供了所需抗蚀剂图案并进行蚀刻处理的衬底的方法，并且可选地，随后的灰化处理，所述方法包括以下步骤：（I）用去除剂处理所述抗蚀剂图案 溶液，其含有氢氟酸和无金属离子的碱的主要成分; （II）用含有乙二醇和/或丙二醇的光刻用冲洗溶液和除所述二醇以外的水溶性有机溶剂冲洗所述基材; 和（III）用水洗涤所述基材。
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公开(公告)号：US5908730A
公开(公告)日：1999-06-01
申请号：US898320
申请日：1997-07-22
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039
摘要： Proposed is a positive- or negative-working chemical-sensitization photoresist composition having advantages in respect of the contrast and resolution of patterning, photosensitivity and cross sectional profile of the patterned resist layer as well as in respect of stability of the latent image formed by pattern-wise exposure to light before post-exposure baking treatment. The composition comprises: (A) 100 parts by weight of a film-forming resinous ingredient which causes a change, i.e. increase or decrease, of solubility in an aqueous alkaline solution by the interaction with an acid; and (B) from 0.5 to 20 parts by weight of a radiation-sensitive acid-generating agent which is a diazomethane compound represented by the general formulaR.sup.1 --SO.sub.2 --C(.dbd.N.sub.2)--SO.sub.2 --R.sup.2,in which R.sup.1 and R.sup.2 are each, independently from the other, a monovalent cyclic group substituted on the cyclic nucleus by an acid-dissociable group such as a tert-butoxycarbonyl and acetal groups.
摘要翻译： 提出了一种正性或负性的化学增感光致抗蚀剂组合物，其在图案化抗蚀剂层的图案的对比度和分辨率，光敏性和横截面轮廓方面以及关于通过图案形成的潜像的稳定性方面具有优势 在曝光前烘烤处理下曝光。 该组合物包含：（A）100重量份成膜树脂成分，其通过与酸的相互作用而引起在碱性水溶液中的溶解度的改变，即增加或减少; 和（B）0.5〜20重量份的辐射敏感性酸产生剂，其为通式R 1 -SO 2 -C（= N 2）-SO 2 -R 2表示的重氮甲烷化合物，其中R 1和R 2为 各自独立地是通过酸解离基团如叔丁氧基羰基和缩醛基在环状核上取代的一价环状基团。
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公开(公告)号：US5863710A
公开(公告)日：1999-01-26
申请号：US869342
申请日：1997-06-05
CPC分类号： G03F7/322
摘要： Proposed is an aqueous alkaline developer solution used in the development treatment of a photoresist layer, especially, formed on an aluminum surface of a substrate. Different from conventional aqueous alkaline developer solutions which attack the aluminum surface in the development treatment to cause discoloration or corrosion, the inventive developer solution is free from such troubles by virtue of the specific formulation including, besides 2 to 10% by weight of tetramethylammonium hydroxide as the effective developing ingredient, 20 to 50% by weight of a polyhydric alcohol which is preferably glycerin.
摘要翻译： 提出了用于光致抗蚀剂层的显影处理的碱性显影剂水溶液，特别是形成在基材的铝表面上。 与在显影处理中侵蚀铝表面以引起变色或腐蚀的常规水性碱性显影剂溶液不同，本发明的显影剂溶液由于具体制剂而没有这种麻烦，除了含有2至10重量％的氢氧化四甲基铵 有效的显影成分，20〜50重量％的优选甘油的多元醇。
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84.发明授权
公开(公告)号：US5762697A
公开(公告)日：1998-06-09
申请号：US749845
申请日：1996-11-15
IPC分类号： C08G77/06 , C08J3/09 , C09D183/04 , H01L21/316 , C09D183/06
CPC分类号： C08J3/095 , C08G77/06 , C09D183/04 , C08J2383/04
摘要： Proposed is a coating solution for the formation of a silica-based coating film on the surface of a substrate used in the manufacturing process of semiconductor devices as well as a method for the coating solution, which exhibits excellent storage stability without gelation and is capable of forming a silica-based coating film free from the troubles due to evolution of gases such as crack formation even when the coating film has a relatively large thickness. The coating solution is prepared by the hydrolysis reaction of a trialkoxy silane such as triethoxy silane dissolved in propyleneglycol dimethyl ether in a specified concentration with addition of a specified amount of water followed by removal of the alcohol formed by the hydrolysis reaction of the trialkoxy silane by distillation to such an extent that the content of the alcohol in the coating solution does not exceed 10% by weight or, preferably, 3% by weight.
摘要翻译： 提出了用于在半导体器件的制造工艺中使用的基板表面上形成二氧化硅基涂膜的涂布溶液以及涂布溶液的方法，其表现出优异的储存稳定性而没有凝胶化，并且能够 形成即使当涂膜具有相对较大的厚度时也由于诸如裂纹形成等气体的析出而无法解决的二氧化硅系涂膜。 通过加入特定量的水，然后除去由三烷氧基硅烷的水解反应形成的醇，通过溶解在规定浓度的丙二醇二甲醚中的三烷氧基硅烷如三乙氧基硅烷等水解反应制备涂布溶液， 蒸馏到使涂布溶液中的醇的含量不超过10重量％，优选3重量％的程度。
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85.发明授权Stock developer solutions for photoresists and developer solutions prepared by dilution thereof 失效用于通过稀释制备的光致抗蚀剂和显影剂溶液的库存显影剂溶液
公开(公告)号：US5747224A
公开(公告)日：1998-05-05
申请号：US630622
申请日：1996-04-10
IPC分类号： G03F7/32
CPC分类号： G03F7/32
摘要： Stock developer solutions for photoresists contain an organic base free from metal ions and at least one compound having a specified weight average molecular weight that is selected from among polyethylene oxide compounds, polypropylene oxide compounds and ethylene oxide/propylene oxide adducts. The stock developer solutions may be diluted to requisite concentrations to prepare developer solutions for photoresists. By adding one or more of the specified compounds to the organic base free from metal ions, one can produce highly compatible stock developer solutions for photoresists that are concentrated, that have high stability in quality and that permit ease in handling and quality control. The stock developer solutions may be diluted to prepare developer solutions that are small in the tendency to foam and effective in defoaming, that assure uniform wetting and that are capable of forming resist patterns faithful to mask patterns.
摘要翻译： 用于光致抗蚀剂的储备显影剂溶液含有不含金属离子的有机碱和至少一种具有指定重均分子量的化合物，其选自聚环氧乙烷化合物，聚环氧丙烷化合物和环氧乙烷/环氧丙烷加合物。 原料显影剂溶液可以稀释至必需的浓度以制备用于光致抗蚀剂的显影剂溶液。 通过将一种或多种指定的化合物加入到不含金属离子的有机基质中，可以生产高浓度的光致抗蚀剂的高度相容的原料显影剂溶液，其具有高的质量稳定性并且易于处理和质量控制。 可以将原料显影剂溶液稀释以制备发泡趋势小并且有效消泡的显影剂溶液，其确保均匀润湿并且能够形成忠实于掩模图案的抗蚀剂图案。
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86.发明授权公开(公告)号：US06261745B1
公开(公告)日：2001-07-17
申请号：US09323988
申请日：1999-06-02
IPC分类号： G03F740
CPC分类号： H01L21/02071 , G03F7/425 , G03F7/427 , H01L21/02052 , H01L21/31116 , H01L21/31138
摘要： Disclosed herein is a post-ashing treating liquid composition comprising a salt of hydrofluoric acid with a base free from metal ions, a water-soluble organic solvent, water, and an acetylene alcohol/alkylene oxide adduct. Disclosed also herein is a process for treatment with said treating liquid composition. For removal of resist residues such as modified photoresist films and metal depositions, the treating liquid composition and the treating process can be advantageously applied to the substrates having been dry-etched, followed by ashing under severe conditions, without corrosion on metal layers and damage to an organic SOG layer formed thereon.
摘要翻译： 本文公开了一种后灰化处理液体组合物，其包含氢氟酸盐与不含金属离子的碱，水溶性有机溶剂，水和乙炔醇/烯化氧加合物。 本文还公开了用所述处理液组合物进行处理的方法。 为了除去抗蚀剂残留物如改性光致抗蚀剂膜和金属沉积物，处理液组合物和处理方法可以有利地应用于已经被干法蚀刻的基底上，随后在苛刻条件下灰化，而不会对金属层产生腐蚀和损坏 在其上形成有机SOG层。
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公开(公告)号：US6132928A
公开(公告)日：2000-10-17
申请号：US148997
申请日：1998-09-08
CPC分类号： G03F7/091 , Y10S430/106 , Y10S430/121
摘要： A coating solution for forming an antireflective coating film making it possible to form a uniform coating film, which sustains an antireflective effect and shows no unevenness of coating or little surface discontinuity, even in a small application dose and thus ensuring the production of semiconductor devices at a low cost and a high efficiency. The coating solution for forming an antireflective coating film is one to be used for forming an anti-interference film on a resist film, characterized in that the coating solution gives a contact angle to the resist film of 15.degree. or below, when applied onto the resist film.
摘要翻译： 一种用于形成抗反射涂膜的涂布溶液，使得可以形成均匀的涂膜，即使在小的涂布剂量下也能保持抗反射效果，并且不显示涂层不均匀或少量的表面不连续性，从而确保半导体器件的生产 成本低，效率高。 用于形成抗反射涂膜的涂布溶液是用于在抗蚀剂膜上形成抗干扰膜的涂布溶液，其特征在于，当涂布在抗蚀剂膜上时，涂布溶液与抗蚀剂膜接触角为15°或更低 抗拒膜。
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公开(公告)号：US5908738A
公开(公告)日：1999-06-01
申请号：US18910
申请日：1998-02-05
CPC分类号： G03F7/091 , Y10S430/117 , Y10S430/124
摘要： Proposed is a novel undercoating composition used in the photolithographic patterning of a photoresist layer by intervening between the substrate surface and the photoresist layer to decrease the adverse influences of the reflecting light from the substrate surface. The undercoating composition of the invention comprises (a) a melamine compound substituted by methylol groups and/or alkoxymethyl groups and (b) a polyhydroxy benzophenone compound, diphenyl sulfone compound or diphenyl sulfoxide compound, optionally, with admixture of (c) an alkali-insoluble resin of a (meth)acrylic acid ester.
摘要翻译： 提出了通过介于基板表面和光致抗蚀剂层之间用于光致抗蚀剂层的光刻图案中的新颖的底涂层组合物，以减少来自基板表面的反射光的不利影响。 本发明的底漆组合物包含（a）被羟甲基和/或烷氧基甲基取代的三聚氰胺化合物和（b）多羟基二苯甲酮化合物，二苯基砜化合物或二苯基亚砜化合物，任选地与（c） （甲基）丙烯酸酯的不溶性树脂。
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89.发明授权Remover solution composition for resist and method for removing resist using the same 失效去除抗蚀剂的溶液组合物及使用其去除抗蚀剂的方法
公开(公告)号：US5792274A
公开(公告)日：1998-08-11
申请号：US747898
申请日：1996-11-13
IPC分类号： C11D7/10 , C11D7/26 , C11D7/32 , C11D7/50 , C11D17/08 , G03F7/42 , H01L21/027 , B08B3/04 , B08B3/08
摘要： A remover solution composition for resist which comprises (a) a salt of hydrofluoric acid with a metal-free base, (b) a water-soluble organic solvent, and (c) water and optionally (d) an anticorrosive, and has a pH of 5 to 8. A method for removing resist which comprises the steps of (I) forming a resist layer on a substrate having a metal film, (II) light-exposing the resist layer through a mask pattern and subsequently developing the resist layer to form a resist pattern, and (III) dry-etching the substrate using the resist pattern as a mask and then removing the unnecessary resist and modified resist film with the remover solution composition.
摘要翻译： 一种抗蚀剂去除剂溶液组合物，其包含（a）氢氟酸与无金属碱的盐，（b）水溶性有机溶剂和（c）水和任选的（d）防腐蚀剂，并具有pH （I）在具有金属膜的基板上形成抗蚀剂层的步骤，（II）通过掩模图案曝光抗蚀剂层，然后将抗蚀剂层显影到 形成抗蚀剂图案，（III）使用抗蚀剂图案作为掩模对基板进行干蚀刻，然后用去除剂溶液组合物除去不需要的抗蚀剂和改性的抗蚀剂膜。
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90.发明授权Liquid coating composition for use in forming photoresist coating films and a photoresist material using said composition 失效用于形成光致抗蚀剂涂膜的液体涂料组合物和使用所述组合物的光致抗蚀剂材料
公开(公告)号：US5783362A
公开(公告)日：1998-07-21
申请号：US797988
申请日：1997-02-12
CPC分类号： G03F7/0048 , G03F7/091
摘要： A liquid coating composition for forming an anti-interference film over a photoresist film is prepared by combining a water-soluble, film-forming component with a specified fluorosurfactant or by combining said water-soluble, film-forming component with a fluorosurfactant and a specified anionic surfactant. A coating film is formed from said liquid coating composition over a photoresist film to produce a photoresist material of a dual structure. The photoresist material is particularly effective in lessening the multiple-interference effect of light, thereby enabling the formation of very fine resist patterns having high fidelity to mask patterns.
摘要翻译： 通过将水溶性成膜组分与特定的含氟表面活性剂结合，或将所述水溶性成膜组分与含氟表面活性剂和指定的含氟表面活性剂组合来制备用于在光致抗蚀剂膜上形成抗干扰膜的液体涂料组合物 阴离子表面活性剂。 在光致抗蚀剂膜上由所述液体涂料组合物形成涂膜以产生具有双重结构的光致抗蚀剂材料。 光致抗蚀剂材料在减轻光的多重干涉效应方面特别有效，从而能够形成对掩模图案具有高保真度的非常精细的抗蚀剂图案。
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