Active material for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery comprising it
    81.
    发明授权
    Active material for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery comprising it 失效
    非水电解质二次电池用活性物质及其非水电解质二次电池

    公开(公告)号:US08263261B2

    公开(公告)日:2012-09-11

    申请号:US12232826

    申请日:2008-09-24

    IPC分类号: H01M4/13 H01M4/88

    摘要: Disclosed are an active material for non-aqueous electrolyte secondary battery usable as a power source for backup, which has a large battery capacity and which may prevent the increase in the internal resistance after a storage test; and a non-aqueous electrolyte secondary battery comprising the active material. The active material is used as a positive electrode active material or a negative electrode active material of a non-aqueous electrolyte secondary battery, and this is prepared by adding at least one additive element selected from a group consisting of Al, B, Nb, Ti and W to molybdenum dioxide; and the non-aqueous electrolyte secondary battery comprises the active material.

    摘要翻译: 公开了可用作备用电源的非水电解质二次电池的活性材料,其具有大的电池容量并且可以防止储存试验后的内阻增加; 以及包含活性物质的非水电解质二次电池。 活性物质用作非水电解质二次电池的正极活性物质或负极活性物质,通过添加至少一种选自由Al,B,Nb,Ti W至二氧化钼; 非水电解质二次电池包含活性物质。

    All terrain vehicle
    82.
    发明授权
    All terrain vehicle 有权
    全地形车

    公开(公告)号:US08256563B2

    公开(公告)日:2012-09-04

    申请号:US12604423

    申请日:2009-10-23

    IPC分类号: B60K11/06

    摘要: In an all terrain vehicle, an engine body of an engine unit is positioned along a center line that is perpendicular or substantially perpendicular to a transverse direction of the vehicle. A continuously variable transmission of the engine unit is disposed transversely lateral to the engine body. A center console includes an inner space. The center console is disposed in a transverse center portion of a cabin space. The center console connects a space positioned forward of a front panel and a space positioned under a seat. An intake duct is connected to an upper surface of the engine unit, and extends forward therefrom. The intake duct is at least partially disposed in the interior of the center console. An exhaust duct is connected to the engine unit, and extends rearward therefrom.

    摘要翻译: 在全地形车辆中,发动机单元的发动机体沿着与车辆的横向方向垂直或基本垂直的中心线定位。 发动机单元的无级变速器设置在发动机主体的横向横向。 中央控制台包含内部空间。 中央控制台设置在舱室空间的横向中心部分。 中央控制台连接一个位于前面板前方的空间和一个位于座位下方的空间。 进气管连接到发动机单元的上表面并从其向前延伸。 进气管道至少部分地设置在中控台的内部。 排气管连接到发动机单元并从其向后延伸。

    Semiconductor device and method of forming semiconductor device
    83.
    发明授权
    Semiconductor device and method of forming semiconductor device 有权
    半导体器件及半导体器件的形成方法

    公开(公告)号:US08198661B2

    公开(公告)日:2012-06-12

    申请号:US12637480

    申请日:2009-12-14

    申请人: Hiroyuki Fujimoto

    发明人: Hiroyuki Fujimoto

    IPC分类号: H01L27/108

    摘要: A semiconductor device include a semiconductor substrate comprising a substrate body, a base over the substrate body and a pillar over a first region of the base; a buried line adjacent to a side surface of the base; a first diffusion layer over a second region of the base; a second diffusion layer over the pillar, the second diffusion layer being higher in level than the first diffusion layer; and a third diffusion layer disposed between the buried line and the semiconductor substrate. The third diffusion layer is different in level from the first diffusion layer. The top level of the third diffusion layer is lower than the top level of the first diffusion layer.

    摘要翻译: 半导体器件包括半导体衬底,其包括衬底主体,衬底上的基底和位于基底的第一区域上的柱; 邻近基底的侧表面的掩埋线; 在所述基底的第二区域上的第一扩散层; 在所述柱上方的第二扩散层,所述第二扩散层的水平高于所述第一扩散层; 以及设置在所述掩埋线和所述半导体衬底之间的第三扩散层。 第三扩散层的水平与第一扩散层不同。 第三扩散层的顶层低于第一扩散层的顶层。

    Semiconductor device with transistor, conductive pad, and contact
    84.
    发明授权
    Semiconductor device with transistor, conductive pad, and contact 有权
    具有晶体管,导电焊盘和触点的半导体器件

    公开(公告)号:US08110872B2

    公开(公告)日:2012-02-07

    申请号:US12621104

    申请日:2009-11-18

    申请人: Hiroyuki Fujimoto

    发明人: Hiroyuki Fujimoto

    IPC分类号: H01L31/119

    摘要: A semiconductor device includes a transistor, a conductive pad, and a contact. The conductive pad is electrically connected to the transistor. The conductive pad may include, but is not limited to, a first region and a second region. The contact is electrically connected to the conductive pad. At least a main part of the first region overlaps the transistor in plan view. At least a main part of the second region does not overlap the transistor in plan view. At least a main part of the contact overlaps the second region in plan view. The at least main part of the contact does not overlap the first region in plan view. The at least main part of the contact does not overlap the transistor in plan view.

    摘要翻译: 半导体器件包括晶体管,导电焊盘和触点。 导电焊盘电连接到晶体管。 导电焊盘可以包括但不限于第一区域和第二区域。 触点电连接到导电焊盘。 第一区域的至少主要部分在平面图中与晶体管重叠。 第二区域的至少主要部分在平面图中不与晶体管重叠。 在平面图中,至少接触的主要部分与第二区域重叠。 在平面图中,接触件的至少主要部分不与第一区域重叠。 接触的至少主要部分在平面图中不与晶体管重叠。

    Semiconductor device and method of manufacturing the same
    86.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US07858508B2

    公开(公告)日:2010-12-28

    申请号:US11717707

    申请日:2007-03-14

    IPC分类号: H01L21/306 H01L21/336

    摘要: In a method of manufacturing a semiconductor device, a trench is formed to have an upper quadrangular section and a lower circular section which is formed through a hydrogen annealing process, to extend in a depth direction of a semiconductor substrate. An insulating film is formed on a surface of the trench and a surface of the semiconductor substrate. A conductive film is formed to fill the trench whose surface is covered with the an insulating film. Source/drain regions are formed on both sides of the trench.

    摘要翻译: 在制造半导体器件的方法中,沟槽形成为具有通过氢退火工艺形成的上部四边形部分和下部圆形部分,以在半导体衬底的深度方向上延伸。 在沟槽的表面和半导体衬底的表面上形成绝缘膜。 形成导电膜以填充其表面被绝缘膜覆盖的沟槽。 源极/漏极区域形成在沟槽的两侧。

    Semiconductor apparatus and method for fabricating the same
    87.
    发明授权
    Semiconductor apparatus and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US07829418B2

    公开(公告)日:2010-11-09

    申请号:US12155530

    申请日:2008-06-05

    IPC分类号: H01L21/336

    摘要: A semiconductor apparatus including a trench gate transistor having at least an active region surrounded by a device isolation insulating film; a trench provided by bringing both ends thereof into contact with the device isolation insulating film in the active region; a gate electrode formed in the trench via a gate insulating film; and a diffusion layer formed close to the trench; on a semiconductor substrate, and also includes an opening portion positioned on one surface of the semiconductor substrate; a pair of first inner walls positioned in a side of the device isolation insulating film and connected with the opening portion; a pair of second inner walls positioned in a side of the active region and connected with the opening portion; and a bottom portion positioned opposite to the opening portion and connected with the first inner walls and the second inner walls, wherein a cross sectional outline of the second inner wall is substantially linear, and a burr generated inside the trench is removed or reduced.

    摘要翻译: 一种半导体装置,包括具有由器件隔离绝缘膜包围的至少一个有源区的沟槽栅极晶体管; 通过使其两端与有源区域中的器件隔离绝缘膜接触而提供的沟槽; 通过栅极绝缘膜形成在所述沟槽中的栅电极; 以及在沟槽附近形成的扩散层; 并且还包括位于半导体衬底的一个表面上的开口部分; 位于所述器件隔离绝缘膜侧并与所述开口部连接的一对第一内壁; 一对第二内壁,其位于所述有源区域的一侧并与所述开口部分连接; 以及与所述开口部相对设置并与所述第一内壁和所述第二内壁连接的底部,其中所述第二内壁的横截面轮廓基本上是线性的,并且在所述沟槽内产生的毛刺被去除或减少。

    NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY
    89.
    发明申请
    NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY 审中-公开
    非水电解质二次电池

    公开(公告)号:US20100239910A1

    公开(公告)日:2010-09-23

    申请号:US12728688

    申请日:2010-03-22

    IPC分类号: H01M4/52

    摘要: A non-aqueous electrolyte secondary battery including a positive electrode having a positive electrode mixture layer containing a positive electrode active material, a binder, and a conductive agent, and a negative electrode having a negative electrode active material capable of intercalating and deintercalating lithium. The positive electrode active material includes a layered lithium-transition metal composite oxide represented by the compositional formula LiaNixM(1-x)O2 where 0

    摘要翻译: 一种非水电解质二次电池,包括具有含有正极活性物质,粘合剂和导电剂的正极合剂层的正极和具有能够嵌入和脱嵌锂的负极活性物质的负极。 正极活性物质包括由组成式ⅫNixM(1-x)O 2表示的层状锂 - 过渡金属复合氧化物,其中0

    Wet brake system for a vehicle and a utility vehicle comprising the wet brake system
    90.
    发明授权
    Wet brake system for a vehicle and a utility vehicle comprising the wet brake system 有权
    用于车辆的湿式制动系统和包括湿式制动系统的多用途车辆

    公开(公告)号:US07793764B2

    公开(公告)日:2010-09-14

    申请号:US11502802

    申请日:2007-05-30

    IPC分类号: F16D55/04

    摘要: A wet brake system for a vehicle including a case; an internal operation lever disposed inside the case; a hydraulic cylinder which is integrally mounted to the case and is configured to actuate the internal operation lever; and a brake mechanism configured to be operated by the actuation of the internal operation lever by the hydraulic cylinder to apply a braking force to an axle of the vehicle.

    摘要翻译: 一种用于包括壳体的车辆的湿式制动系统; 设置在所述壳体内的内部操作杆; 液压缸,其一体地安装到所述壳体并且构造成致动所述内部操作杆; 以及制动机构,其被配置为通过由液压缸致动内部操作杆来操作,以将制动力施加到车辆的车轴。