公开(公告)号：US09312135B2

公开(公告)日：2016-04-12

申请号：US14219706

申请日：2014-03-19

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Hans-Joachim Schulze ,  Moriz Jelinek ,  Werner Schustereder

IPC: H01L21/336 ,  H01L21/265 ,  H01L21/225 ,  H01L21/306 ,  H01L21/324 ,  H01L29/04 ,  H01L29/16 ,  H01L29/167 ,  H01L29/36

CPC classification number: H01L29/32 ,  H01L21/2253 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/306 ,  H01L21/3221 ,  H01L21/324 ,  H01L21/3242 ,  H01L29/04 ,  H01L29/16 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7395 ,  H01L29/74 ,  H01L29/7802 ,  H01L29/86

Abstract: The generation of auxiliary crystal defects is induced in a semiconductor substrate. Then the semiconductor substrate is pre-annealed at a temperature above a dissociation temperature at which the auxiliary crystal defects transform into defect complexes, which may be electrically inactive. Then protons may be implanted into the semiconductor substrate to induce the generation of radiation-induced main crystal defects. The defect complexes may enhance the efficiency of the formation of particle-related dopants based on the radiation-induced main crystal defects.

Abstract translation: 在半导体衬底中产生辅助晶体缺陷。 然后半导体衬底在高于解链温度的温度下进行预退火，在该温度下辅助晶体缺陷转变为缺陷复合物，其可能是电不活跃的。 然后可以将质子注入到半导体衬底中以引起辐射诱导的主晶体缺陷的产生。 基于辐射诱导的主晶体缺陷，缺陷复合物可提高颗粒相关掺杂剂形成的效率。

公开(公告)号：US09293330B2

公开(公告)日：2016-03-22

申请号：US14011832

申请日：2013-08-28

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Ingo Muri ,  Friedrich Kroener ,  Werner Schustereder

IPC: H01L21/322 ,  H01L29/868 ,  H01L21/265 ,  H01L21/263 ,  H01L21/324 ,  H01L21/3063

CPC classification number: H01L21/26513 ,  H01L21/263 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/3063 ,  H01L21/3242

Abstract: A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.

Abstract translation: 公开了一种制造半导体的方法，该方法具有：提供具有第一面和第二面的半导体本体; 通过所述半导体本体中的所述第一侧至所述半导体本体的第一深度位置的第一注入而在所述半导体本体中形成n掺杂区; 以及通过所述半导体本体中的所述第二侧到所述半导体本体的第二深度位置的第二注入在所述半导体本体中形成p掺杂区，在所述n掺杂区和所述p掺杂区之间形成pn结 在半导体体内。

公开(公告)号：US20150270132A1

公开(公告)日：2015-09-24

申请号：US14219706

申请日：2014-03-19

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Hans-Joachim Schulze ,  Moriz Jelinek ,  Werner Schustereder

IPC: H01L21/265 ,  H01L21/306 ,  H01L29/36 ,  H01L21/225 ,  H01L29/04 ,  H01L29/167 ,  H01L21/324 ,  H01L29/16

CPC classification number: H01L29/32 ,  H01L21/2253 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/306 ,  H01L21/3221 ,  H01L21/324 ,  H01L21/3242 ,  H01L29/04 ,  H01L29/16 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7395 ,  H01L29/74 ,  H01L29/7802 ,  H01L29/86

Abstract: The generation of auxiliary crystal defects is induced in a semiconductor substrate. Then the semiconductor substrate is pre-annealed at a temperature above a dissociation temperature at which the auxiliary crystal defects transform into defect complexes, which may be electrically inactive. Then protons may be implanted into the semiconductor substrate to induce the generation of radiation-induced main crystal defects. The defect complexes may enhance the efficiency of the formation of particle-related dopants based on the radiation-induced main crystal defects.

Abstract translation: 在半导体衬底中产生辅助晶体缺陷。 然后半导体衬底在高于解链温度的温度下进行预退火，在该温度下辅助晶体缺陷转变为缺陷复合物，其可能是电不活跃的。 然后可以将质子注入到半导体衬底中以引起辐射诱导的主晶体缺陷的产生。 基于辐射诱导的主晶体缺陷，缺陷复合物可提高颗粒相关掺杂剂形成的效率。

公开(公告)号：US20150064890A1

公开(公告)日：2015-03-05

申请号：US14011832

申请日：2013-08-28

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Ingo Muri ,  Fritz Kroener ,  Werner Schustereder

IPC: H01L21/265

CPC classification number: H01L21/26513 ,  H01L21/263 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/3063 ,  H01L21/3242

Abstract: A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.

Abstract translation: 公开了一种制造半导体的方法，该方法具有：提供具有第一面和第二面的半导体本体; 通过所述半导体本体中的所述第一侧至所述半导体本体的第一深度位置的第一注入而在所述半导体本体中形成n掺杂区; 以及通过所述半导体本体中的所述第二侧到所述半导体本体的第二深度位置的第二注入在所述半导体本体中形成p掺杂区，在所述n掺杂区和所述p掺杂区之间形成pn结 在半导体体内。