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公开(公告)号：US07268622B2
公开(公告)日：2007-09-11
申请号：US11266861
申请日：2005-11-03
申请人： Frederick A. Perner
发明人： Frederick A. Perner
IPC分类号： H03F3/45
CPC分类号： H03F3/45179 , G11C7/04 , G11C7/062 , G11C7/08 , G11C11/16 , G11C29/02 , G11C29/026 , G11C29/028 , G11C2207/2254 , H03F1/52 , H03F3/45744 , H03F2203/45048 , H03F2203/45342 , H03F2203/45366
摘要： A combined analog and digital calibration circuit and method for adjusting an output offset voltage of a differential amplifier circuit are provided. The circuit comprises a digitally controlled voltage divider positioned between at least one isolated well and a controllable voltage source, a controllable voltage source controlled by an initial constant current and a variable current, and a controller to modify the variable current to continuously adjust the back gate control voltage. The method comprises adjusting a control voltage of at least one of a pair of input transistors using a back gate control voltage, providing an analog current to establish a back gate control voltage, and altering the analog current when the back gate control voltage causes an output offset voltage to differ from a reference voltage by more than a predetermined quantity.
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公开(公告)号：US07224598B2
公开(公告)日：2007-05-29
申请号：US10933039
申请日：2004-09-02
申请人： Frederick A. Perner
发明人： Frederick A. Perner
IPC分类号： G11C11/00
CPC分类号： G11C13/0011 , G11C13/0064 , G11C13/0069 , G11C2013/0066 , G11C2013/009 , G11C2213/77
摘要： Programming of a programmable resistive memory device includes supplying programming power to the device; generating feedback as to when the device has been programmed; and removing the programming power when the feedback indicates that the device has been programmed.
摘要翻译： 可编程电阻性存储器件的编程包括向器件提供编程电源; 产生关于设备何时被编程的反馈; 并且当反馈指示设备已被编程时，去除编程电源。
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公开(公告)号：US07221582B2
公开(公告)日：2007-05-22
申请号：US10649078
申请日：2003-08-27
IPC分类号： G11C11/00
摘要： Methods and apparatuses are disclosed for controlling the write current in magnetic memory. In some embodiments, the method includes: providing a current in a plurality of memory write lines (where the write lines may be magnetically coupled to at least one memory element), coupling a first and second plurality of transistors to either end of the memory write line, and altering the conduction state of individual transistors within the first and second plurality of transistors.
摘要翻译： 公开了用于控制磁存储器中的写入电流的方法和装置。 在一些实施例中，该方法包括：在多个存储器写入线（其中写入线可以磁耦合到至少一个存储器元件）上提供电流，将第一和第二多个晶体管耦合到存储器写入的任一端 并且改变第一和第二多个晶体管内的各个晶体管的导通状态。
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公开(公告)号：US07057920B2
公开(公告)日：2006-06-06
申请号：US10832912
申请日：2004-04-26
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C11/1675
摘要： A method of performing a thermally assisted write operation on a selected two conductor spin valve memory (SVM) cell having a material wherein the coercivity is decreased upon an increase in temperature. In a particular embodiment, a first write magnetic field is established by a first write current flowing from a first voltage potential to a second voltage potential as applied to the first conductor. A second write magnetic field is established by a second write current flowing from a third voltage potential to a fourth voltage potential as applied to the second conductor. The voltage potential of the first conductor is greater than the voltage potential of the second conductor. As a result, a third current, flows from the first conductor through the SVM cell to the second conductor. The SVM cell has an internal resistance such that the flowing current generates heat within the SVM cell. As the SVM cell is self heated, the coercivity of the SVM cell falls below the combined write magnetic fields.
摘要翻译： 在具有其中矫顽力在温度升高时减小的材料的所选择的两个导体自旋阀存储器（SVM）单元上进行热辅助写入操作的方法。 在特定实施例中，当施加到第一导体时，通过从第一电压电位流向第二电压电位的第一写入电流建立第一写入磁场。 第二写入磁场通过施加到第二导体的从第三电压电位流向第四电压电位的第二写入电流来建立。 第一导体的电压电位大于第二导体的电压电位。 结果，第三电流从第一导体流过SVM电池流到第二导体。 SVM单元具有内部电阻，使得流动电流在SVM单元内产生热量。 由于SVM单元是自加热的，所以SVM单元的矫顽力低于组合的写入磁场。
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公开(公告)号：US07042757B2
公开(公告)日：2006-05-09
申请号：US10794302
申请日：2004-03-04
申请人： Frederick A. Perner
发明人： Frederick A. Perner
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： This invention provides a 1R1D block architecture magnetic memory device. In a particular embodiment, a cross-point array of resistive devices is provided. Each resistive device is paired with an isolation device. A feedback controlled control circuit is coupled to the cross-point array. The control circuit establishes an equi-potential setting within the cross-point array, and recognizes a change in current when a selected resistive device within the cross-point array is asserted to a reference state. An associated method of use is further provided.
摘要翻译： 本发明提供一种1R1D块架构磁存储器件。 在特定实施例中，提供了电阻器件的交叉点阵列。 每个电阻设备与隔离设备配对。 反馈控制控制电路耦合到交叉点阵列。 所述控制电路在所述交叉点阵列内建立等电位设置，并且当所述交叉点阵列内的所选择的电阻性设备被认定为参考状态时，识别电流的变化。 还提供了相关联的使用方法。
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公开(公告)号：US07006388B2
公开(公告)日：2006-02-28
申请号：US10650278
申请日：2003-08-28
IPC分类号： G11C11/34
摘要： Disclosed herein are systems and devices having memories with reference-initiated sequential sensing. In one embodiment, a reference-initiated sequential sensing method comprises: forming a first attribute measurement associated with a stored data value in a first memory element; using the first memory element to determine a decision threshold; comparing the first attribute measurement to the decision threshold to determine the stored data value in the first memory element; forming a subsequent attribute measurement associated with a stored data value in a subsequent memory element; and comparing the subsequent attribute value to the decision threshold to determine a data value stored in the subsequent memory element.
摘要翻译： 本文公开了具有参考启动的顺序感测的存储器的系统和设备。 在一个实施例中，参考发起的顺序感测方法包括：在第一存储器元件中形成与存储的数据值相关联的第一属性测量; 使用所述第一存储器元件来确定判定阈值; 将所述第一属性测量与所述判定阈值进行比较，以确定所述第一存储器元件中存储的数据值; 形成与随后的存储器元件中存储的数据值相关联的后续属性测量; 以及将所述后续属性值与所述判定阈值进行比较，以确定存储在所述后续存储元件中的数据值。
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公开(公告)号：US06990012B2
公开(公告)日：2006-01-24
申请号：US10680464
申请日：2003-10-07
IPC分类号： G11C11/00
CPC分类号： H01L27/222 , G11C11/16
摘要： The present invention provides a magnetic memory. In one embodiment, the magnetic memory includes a first line having a first cross-sectional area. A second line is provided having a second cross-sectional area different from the first cross-sectional area. A magnetic memory cell stack is positioned between the first line and the second line.
摘要翻译： 本发明提供一种磁存储器。 在一个实施例中，磁存储器包括具有第一横截面积的第一线。 提供具有不同于第一横截面积的第二横截面积的第二线。 磁存储单元堆叠位于第一线和第二线之间。
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公开(公告)号：US06940747B1
公开(公告)日：2005-09-06
申请号：US10854858
申请日：2004-05-26
申请人： Manish Sharma , Frederick A. Perner
发明人： Manish Sharma , Frederick A. Perner
CPC分类号： G11C11/16 , H01L29/785
摘要： The present invention provides a magnetic memory device. An embodiment of the present invention includes a magnetic memory cell that is switchable between two states offering electrical resistance which are detectible by a sense current though the magnetic memory cell. The device includes a field effect transistor (FET) arrangement which has a source and a drain. The source and the drain are connected by a connecting element which projects from a portion of the device and which has an electrical conductivity that varies in response to a gate voltage applied to the connecting element. The magnetic memory cell is in electrical communication with the connecting element so that at least a portion of the sense current is in use associated with a corresponding gate voltage and the FET arrangement amplifies at least a portion of the sense current.
摘要翻译： 本发明提供一种磁存储装置。 本发明的实施例包括磁存储单元，该磁存储单元可在提供电阻的两种状态之间切换，该状态可通过磁存储单元的感测电流检测。 该器件包括具有源极和漏极的场效应晶体管（FET）装置。 源极和漏极通过从器件的一部分突出并具有响应于施加到连接元件的栅极电压而变化的导电性的连接元件连接。 磁存储单元与连接元件电连通，使得感应电流的至少一部分在使用中与相应的栅极电压相关联，并且FET装置放大至少一部分感测电流。
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公开(公告)号：US06937506B2
公开(公告)日：2005-08-30
申请号：US10753539
申请日：2004-01-08
申请人： Thomas C. Anthony , Frederick A. Perner , Heon Lee
发明人： Thomas C. Anthony , Frederick A. Perner , Heon Lee
IPC分类号： G11C11/02 , G11C11/14 , G11C11/15 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L43/08
CPC分类号： G11C11/15
摘要： A random access memory (MRAM) that includes a magnetic memory cell that is switchable between two states under the influence of a magnetic field. The MARAM also includes an electrical bit line coupled to the magnetic memory cell for generating the magnetic field. The electrical bit line includes a conductive component and a magnetic component to guide magnetic flux associated with the magnetic field towards the magnetic memory cell. A thermal insulator is positioned between the conductive portion and the magnetic memory cell, and the magnetic component has at least one guiding portion that extends from the conductive component towards the magnetic memory cell to guide the magnetic flux around at least a portion of the thermal insulator.
摘要翻译： 一种随机存取存储器（MRAM），其包括在磁场影响下在两个状态之间切换的磁存储单元。 MARAM还包括耦合到磁存储单元的电位线，用于产生磁场。 电位线包括导电部件和磁性部件，以将与磁场相关联的磁通量引向磁存储器单元。 热绝缘体位于导电部分和磁存储单元之间，并且磁性部件具有至少一个引导部分，该引导部分从导电部件朝向磁存储器单元延伸，以引导围绕热绝缘体的至少一部分的磁通量 。
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公开(公告)号：US06891768B2
公开(公告)日：2005-05-10
申请号：US10293027
申请日：2002-11-13
CPC分类号： G11C7/062 , G11C11/1673 , G11C13/0061 , G11C27/022 , G11C2013/0057
摘要： Power-saving reading of magnetic memory devices. In one arrangement, a method includes pulsing a voltage on the array, and obtaining a voltage value indicative of a memory state of the target memory cell from the voltage pulse using a sensing circuit that is electrically connected to the target memory cell. In another arrangement, a method includes pulsing an array voltage on a plurality of row and column conductors of the array, connecting a sensing circuit to a conductor that is electrically coupled to the target memory cell, the sensing circuit including a sense element, and determining the voltage drop across the sense element of the sensing circuit during the voltage pulse, the voltage drop being indicative of a memory state of the target memory cell.
摘要翻译： 磁存储器件的省电读取。 在一种布置中，一种方法包括使阵列上的电压脉冲，并使用电连接到目标存储单元的感测电路从电压脉冲获得指示目标存储单元的存储状态的电压值。 在另一种布置中，一种方法包括在阵列的多个行和列导体上脉冲阵列电压，将感测电路连接到电耦合到目标存储单元的导体，感测电路包括感测元件，以及确定 电压脉冲期间感测电路的感测元件上的电压降，电压降指示目标存储器单元的存储状态。
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