公开(公告)号：US06980268B2

公开(公告)日：2005-12-27

申请号：US10754822

申请日：2004-01-09

申请人： Chun-Gi You

发明人： Chun-Gi You

IPC分类号： G02F1/1368 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1362 ,  H01L21/336 ,  H01L29/786 ,  G02F1/136 ,  G02F1/1333

CPC分类号： G02F1/133555 ,  G02F1/1345 ,  G02F1/13454 ,  G02F1/13458 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2001/133388 ,  G02F2001/136236 ,  G02F2001/13685 ,  H01L27/1248

摘要： Disclosed are a liquid crystal display (LCD) device and a method for manufacturing the LCD device. The LCD device has a substrate including a display region and a pad region located in a periphery of the display region, the display region having a transparent electrode, the pad region having a pad electrode. The transparent electrode and the pad electrode are formed from the same layer. A reflective electrode having a transmission window exposing a portion of the transparent electrode is formed on the transparent electrode. The manufacturing process can be simplified because the transparent electrode is directly connected to the reflective electrode. Since the pad electrode is formed of the same layer as the transparent electrode, no metal corrosion occurs to thereby increase the pad reliability during COG bonding.

摘要翻译： 公开了一种液晶显示器（LCD）装置及其制造方法。 LCD装置具有包括显示区域和位于显示区域周边的焊盘区域的基板，显示区域具有透明电极，该焊盘区域具有焊盘电极。 透明电极和焊盘电极由相同的层形成。 在透明电极上形成具有透射透明电极的一部分的透射窗的反射电极。 由于透明电极直接连接到反射电极，所以可以简化制造工艺。 由于焊盘电极由与透明电极相同的层形成，所以不会发生金属腐蚀，从而在COG接合期间增加焊盘的可靠性。

公开(公告)号：US06582982B2

公开(公告)日：2003-06-24

申请号：US09962210

申请日：2001-09-26

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

IPC分类号： H01L2100

CPC分类号： G02F1/1368 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

公开(公告)号：US06486494B2

公开(公告)日：2002-11-26

申请号：US10035245

申请日：2002-01-04

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

IPC分类号： H01L2904

CPC分类号： G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with An Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

摘要翻译： Mo或MoW组合物层具有小于15μOMEGAcm的低电阻率，并且使用Al合金附魔或Cr附魔被蚀刻成具有平滑的锥角，并且Mo或MoW层用于显示器或 半导体显示器以及Al Al层或Cr层。 由于通过调节沉积压力可以沉积Mo或MoW层以便对基底施加低应力，所以可以单独使用单个MoW层作为布线。 当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，使用CF 4 + O 2的蚀刻气体系统可以防止Mo或MoW合金层的蚀刻，以及蚀刻气体 SF6 + HCl（+ He）或SF6 + Cl2（+ He）可以形成要平滑的接触孔的边缘轮廓。 此外，当使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用采用诸如卤化氢和至少一种选自CF 4，CHF 3的气体的气体的蚀刻气体系统， CHClF 2，CH 3 F和C 2 F 6，产生良好的TFT特性，并且H 2等离子体处理可以进一步提高TFT特性。

公开(公告)号：US06403409B1

公开(公告)日：2002-06-11

申请号：US09651258

申请日：2000-08-30

申请人： Chun-Gi You

发明人： Chun-Gi You

IPC分类号： H01L2100

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L27/1288

摘要： A method for forming a top gate polysilicon type thin film transistor is disclosed. Prior to ion implantation, a gate insulating layer except for a gate region is removed to lower an energy level for ion implantation. When two impurity types of a transistor are made on the same substrate, low energy ions are implanted to diminish a photoresist burning problem. Therefore, it is possible to improve conductivity of polysilicon and alleviate damage to the polysilicon.

摘要翻译： 公开了一种用于形成顶栅多晶硅型薄膜晶体管的方法。 在离子注入之前，除去栅极区域之外的栅绝缘层以降低离子注入的能级。 当在相同的衬底上制造两种杂质类型的晶体管时，植入低能量离子以减少光致抗蚀剂的燃烧问题。 因此，可以提高多晶硅的导电性并减轻多晶硅的损伤。

公开(公告)号：US06380098B1

公开(公告)日：2002-04-30

申请号：US09492830

申请日：2000-01-27

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

IPC分类号： H01L21302

CPC分类号： G02F1/1368 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has the low resistivity less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy etchant or a Cr etchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor device along with an Al layer and a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using a polymer layer, an etch gas system CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas SF6+HCl(+He) or SF6+Cl2(+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched by using the Mo or MoW layer as a mask, to use an etch gas system such as hydrogen halide and at least one selected from CF4, CHF3, CHClF2, CH3F and C2F6 yield the good characteristics of TFT, and H2 plasma treatment can cause the characteristics of the TFT to be improved.

摘要翻译： Mo或MoW组合物层具有小于15μOMEGAcm的低电阻率，并且使用Al合金蚀刻剂或Cr蚀刻剂蚀刻以具有平滑的锥角，并且Mo或MoW层用于显示器或半导体的布线 装置以及Al层和Cr层。 由于可以通过调整沉积压力来沉积Mo或MoW层以对基底施加低应力，所以可以单个MoW层自身用作布线。 当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，蚀刻气体系统CF4 + O2可以防止Mo或MoW合金层的蚀刻，并且蚀刻气体SF6 + HCl（+ He）或SF6 + Cl2（+ He）可以形成要平滑的接触孔的边缘轮廓。 此外，当通过使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用蚀刻气体系统如卤化氢和选自CF 4，CHF 3，CHClF 2，CH 3 F 和C2F6产生TFT的良好特性，并且H2等离子体处理可以导致TFT的特性得到改善。

公开(公告)号：US09118035B2

公开(公告)日：2015-08-25

申请号：US13468438

申请日：2012-05-10

申请人： Yong-Woo Park ,  Chun-Gi You ,  Joon-Hoo Choi ,  Won-Pil Lee

发明人： Yong-Woo Park ,  Chun-Gi You ,  Joon-Hoo Choi ,  Won-Pil Lee

IPC分类号： H01L33/00 ,  H01L51/52 ,  H01L27/32 ,  H01L33/44

CPC分类号： H01L51/5284 ,  H01L27/32 ,  H01L33/44

摘要： An organic light-emitting display apparatus includes: a substrate including an emission region and a non-emission region and having a recess formed in at least a portion of the non-emission region; a black matrix disposed in the recess; a thin film transistor disposed on the non-emission region of the substrate and including an active layer, a gate electrode, and source and drain electrodes; a pixel electrode disposed on the emission region of the substrate and electrically connected to one of the source and drain electrodes; an organic emission layer disposed on the pixel electrode; and an opposite electrode disposed on the organic emission layer.

摘要翻译： 一种有机发光显示装置，包括：具有发光区域和非发光区域的基板，具有形成在所述非发光区域的至少一部分中的凹部; 设置在所述凹部中的黑色矩阵; 设置在所述基板的非发光区域上的薄膜晶体管，其包括有源层，栅极电极以及源极和漏极; 设置在所述基板的发射区域并电连接到所述源极和漏极之一的像素电极; 设置在像素电极上的有机发射层; 以及设置在有机发射层上的相对电极。

公开(公告)号：US09012890B2

公开(公告)日：2015-04-21

申请号：US13080444

申请日：2011-04-05

申请人： Chun-Gi You ,  Joon-Hoo Choi

发明人： Chun-Gi You ,  Joon-Hoo Choi

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L27/12 ,  H01L51/52 ,  H01L29/66 ,  H01L29/417 ,  H01L27/32

CPC分类号： H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/326 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66757 ,  H01L51/5265 ,  H01L51/5271 ,  H01L51/5296 ,  H01L2227/323

摘要： An organic light-emitting display device and a method of manufacturing the organic light-emitting display device. A metal layer separated from a pixel electrode is formed without increasing the number of masks, thereby simplifying the pixel electrode and obtaining etching characteristics of a gate electrode.

摘要翻译： 一种有机发光显示装置及其制造方法。 在不增加掩模数量的情况下形成与像素电极分离的金属层，从而简化像素电极并获得栅电极的蚀刻特性。

公开(公告)号：US08659021B2

公开(公告)日：2014-02-25

申请号：US13205846

申请日：2011-08-09

申请人： Chun-Gi You ,  Joon-Hoo Choi

发明人： Chun-Gi You ,  Joon-Hoo Choi

IPC分类号： H01L29/786

CPC分类号： H01L27/1255 ,  H01L27/124 ,  H01L27/3248 ,  H01L27/3279 ,  H01L29/4908 ,  H01L2227/323

摘要： An organic light-emitting display device is manufactured via a simple process and has an improved aperture ratio. The organic light-emitting display device comprising: a substrate; an auxiliary electrode formed on the substrate; a thin film transistor (TFT) formed on the auxiliary electrode, the TFT comprising an active layer, a gate electrode, a source electrode and a drain electrode; an organic electroluminescent (EL) device electrically connected to the TFT and formed by sequentially stacking a pixel electrode formed on the same layer by using the same material as portions of the source and drain electrodes, an intermediate layer comprising an organic light emission layer (EML), and an opposite electrode disposed to face the pixel electrode; and a contact electrode formed on the same layer by a predetermined distance by using the same material as the source and drain electrodes, and electrically connecting the auxiliary electrode and the opposite electrode.

摘要翻译： 通过简单的工艺制造有机发光显示装置，并且具有改善的开口率。 所述有机发光显示装置包括：基板; 形成在基板上的辅助电极; 形成在辅助电极上的薄膜晶体管（TFT），所述TFT包括有源层，栅电极，源电极和漏电极; 电连接到TFT并通过使用与源极和漏极的部分相同的材料依次层叠形成在同一层上的像素电极而形成的有机电致发光（EL）器件，包括有机发光层（EML）的中间层 ）和设置成面对像素电极的相对电极; 以及通过使用与源电极和漏电极相同的材料在同一层上形成预定距离的接触电极，以及电连接辅助电极和相对电极。

公开(公告)号：US08637333B2

公开(公告)日：2014-01-28

申请号：US13206423

申请日：2011-08-09

申请人： Chun-Gi You ,  Joon-Hoo Choi

发明人： Chun-Gi You ,  Joon-Hoo Choi

IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L27/32

CPC分类号： H01L27/3244 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/56

摘要： An organic light emitting diode (OLED) display includes: a first substrate including a display area and a non-display area; a driving element on the display area of the first substrate, and including a driving thin film transistor, a switching thin film transistor, and a capacitor; a circuit unit on the non-display area of the first substrate; an organic light emitting element on the driving element, and including a pixel electrode, an organic emission layer, and a common electrode; an inorganic protective layer covering the circuit unit and the common electrode of the organic light emitting diode; a sealing member on the inorganic protective layer in the non-display area of the first substrate; and a second substrate on the sealing member.

摘要翻译： 有机发光二极管（OLED）显示器包括：包括显示区域和非显示区域的第一基板; 在第一基板的显示区域上的驱动元件，并且包括驱动薄膜晶体管，开关薄膜晶体管和电容器; 在第一基板的非显示区域上的电路单元; 驱动元件上的有机发光元件，并且包括像素电极，有机发射层和公共电极; 覆盖电路单元和有机发光二极管的公共电极的无机保护层; 在所述第一基板的非显示区域中的所述无机保护层上的密封构件; 和密封件上的第二衬底。

公开(公告)号：US08586984B2

公开(公告)日：2013-11-19

申请号：US13080405

申请日：2011-04-05

申请人： Chun-Gi You ,  Joon-Hoo Choi

发明人： Chun-Gi You ,  Joon-Hoo Choi

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC分类号： H01L51/5218 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/3248 ,  H01L51/5265

摘要： An organic light-emitting display device includes an active layer of a thin film transistor arranged on a substrate, a first insulating layer and a gate electrode arranged on the active layer, the gate electrode including a first transparent conductive layer and a first metal layer, a second insulating layer arranged on the gate electrode and including a plurality of contact holes that expose a source region and a drain region of the active layer, a reflective layer and a second transparent conductive layer arranged within the contact holes, a source electrode and a drain electrode arranged on the second transparent conductive layer and on the second insulating layer, the source electrode and the drain electrode each including a second metal layer, a pixel electrode arranged on the first insulating layer, the pixel electrode including the first transparent conductive layer, the reflective layer, and the second transparent conductive layer, an intermediate layer arranged on the pixel electrode and including an organic emission layer and an opposite electrode facing the pixel electrode, wherein the intermediate layer is arranged between the pixel electrode and the opposite electrode.

摘要翻译： 有机发光显示装置包括布置在基板上的薄膜晶体管的有源层，布置在有源层上的第一绝缘层和栅极，所述栅电极包括第一透明导电层和第一金属层， 布置在所述栅电极上并且包括暴露所述有源层的源区和漏区的多个接触孔，布置在所述接触孔内的反射层和第二透明导电层的第二绝缘层，源电极和 漏电极，设置在第二透明导电层上，在第二绝缘层上，源极和漏极各自包括第二金属层，设置在第一绝缘层上的像素电极，包括第一透明导电层的像素电极， 反射层和第二透明导电层，布置在像素el上的中间层 并且包括有机发射层和面对像素电极的相对电极，其中中间层布置在像素电极和相对电极之间。