公开(公告)号：US07054187B2

公开(公告)日：2006-05-30

申请号：US10981508

申请日：2004-11-05

申请人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

发明人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

公开(公告)号：US20060023498A1

公开(公告)日：2006-02-02

申请号：US11206002

申请日：2005-08-18

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： G11C11/14

CPC分类号： H01L31/02164 ,  H01L31/18

摘要： A magnetic memory device includes an SOI substrate having a first semiconductor layer, a first insulating film formed on the first semiconductor layer, and a second semiconductor layer formed on the first insulating film, an element isolation insulating film formed selectively in the second semiconductor layer extending from a surface of the second semiconductor layer with a depth reaching the first insulating film, a switching element formed in the second semiconductor layer, a magneto-resistive element connected to the switching element, a first wiring extending in a first direction at a distance below the magneto-resistive element, and a second wiring formed on the magneto-resistive element and extending in a second direction different from the first direction.

公开(公告)号：US20050259464A1

公开(公告)日：2005-11-24

申请号：US11189851

申请日：2005-07-27

申请人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

发明人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

IPC分类号： H01L27/105 ,  G11B5/33 ,  G11C11/14 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

摘要翻译： 关于本发明的实例的磁性随机存取存储器包括磁阻元件，覆盖磁阻元件的侧表面的第一绝缘层，布置在第一绝缘层上并具有第一凹槽的第二绝缘层 磁阻元件，填充第一沟槽并与磁阻元件连接的写入线以及布置在除了第一沟槽的底部之外的第一和第二绝缘层之间的第三绝缘层，并且具有蚀刻选择 至少相对于第一绝缘层和第二绝缘层。

公开(公告)号：US06958932B2

公开(公告)日：2005-10-25

申请号：US10199176

申请日：2002-07-22

申请人： Keiji Hosotani ,  Yoshiaki Asao ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi ,  Yoshihisa Iwata

发明人： Keiji Hosotani ,  Yoshiaki Asao ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi ,  Yoshihisa Iwata

IPC分类号： H01L27/105 ,  H01L21/768 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  G11C17/14

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L21/76895 ,  H01L43/08

摘要： A semiconductor integrated circuit device includes a cell transistor; a bit line provided above the cell transistor; a magnetoresistive element provided above the bit line, a first end portion of the magnetoresistive element being electrically connected to the bit line; an intracell local interconnection provided above the magnetoresistive element, the intracell local interconnection coupling one of source and drain regions of the cell transistor to a second end portion of the magnetoresistive element; and a write word line provided above the intracell local interconnection, a portion between the write word line and the intracell local interconnection being filled with an insulator alone.

摘要翻译： 半导体集成电路器件包括单元晶体管; 设置在单元晶体管上方的位线; 设置在所述位线上方的磁阻元件，所述磁阻元件的第一端部电连接到所述位线; 设置在磁阻元件上方的电池内局部互连，将电池晶体管的源极和漏极区域中的一个耦合到磁阻元件的第二端部的电池内局部互连; 以及设置在电池内局部互连之上的写入字线，写入字线和单元间局部互连之间的一部分仅用绝缘体填充。

公开(公告)号：US06946712B2

公开(公告)日：2005-09-20

申请号：US10288366

申请日：2002-11-06

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： G11C11/15 ,  G11C7/00 ,  H01L21/8239 ,  H01L27/00 ,  H01L29/76 ,  H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/02164 ,  H01L31/18

摘要： A magnetic memory device includes an SOI substrate having a first semiconductor layer, a first insulating film formed on the first semiconductor layer, and a second semiconductor layer formed on the first insulating film, an element isolation insulating film formed selectively in the second semiconductor layer extending from a surface of the second semiconductor layer with a depth reaching the first insulating film, a switching element formed in the second semiconductor layer, a magneto-resistive element connected to the switching element, a first wiring extending in a first direction at a distance below the magneto-resistive element, and a second wiring formed on the magneto-resistive element and extending in a second direction different from the first direction.

摘要翻译： 一种磁存储器件包括具有第一半导体层，形成在第一半导体层上的第一绝缘膜和形成在第一绝缘膜上的第二半导体层的SOI衬底，选择性地形成在第二半导体层中延伸的元件隔离绝缘膜 从所述第二半导体层的表面到达所述第一绝缘膜的深度，形成在所述第二半导体层中的开关元件，连接到所述开关元件的磁阻元件，在第一方向上延伸的距离低于第一布线的第一布线 磁阻元件和形成在磁阻元件上并沿与第一方向不同的第二方向延伸的第二布线。

公开(公告)号：US20050141148A1

公开(公告)日：2005-06-30

申请号：US11000093

申请日：2004-12-01

申请人： Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Hiroaki Yoda

发明人： Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Hiroaki Yoda

IPC分类号： G11B5/33 ,  G11B5/39

CPC分类号： G11B5/39

摘要： It is possible to reduce writing current without causing fluctuation of the writing characteristic. A magnetic memory includes: a magnetoresistance effect element having a magnetization pinned layer whose magnetization direction is pinned, a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the magnetization pinned layer and the storage layer; and a first wiring layer which is electrically connected to the magnetoresistance effect element and extends in a direction substantially perpendicular to a direction of an easy magnetization axis of the storage layer, an end face of the magnetoresistance effect element substantially perpendicular to the direction of the easy magnetization axis of the storage layer and an end face of the first wiring layer substantially perpendicular to the direction of the easy magnetization axis being positioned on the same plane.

摘要翻译： 可以减小写入电流而不引起写入特性的波动。 磁存储器包括：磁阻效应元件，具有其磁化方向被钉扎的磁化钉扎层，其磁化方向可变的存储层和设置在磁化钉扎层与存储层之间的非磁性层; 以及第一布线层，其电连接到所述磁阻效应元件并且沿着与所述存储层的容易磁化轴方向大致垂直的方向延伸，所述磁阻效应元件的端面基本上垂直于所述容易的方向 存储层的磁化轴和基本上垂直于易磁化轴的方向的第一布线层的端面位于同一平面上。

公开(公告)号：US06900490B2

公开(公告)日：2005-05-31

申请号：US10649986

申请日：2003-08-28

申请人： Yoshiaki Asao ,  Hiroaki Yoda ,  Minoru Amano ,  Tomomasa Ueda

发明人： Yoshiaki Asao ,  Hiroaki Yoda ,  Minoru Amano ,  Tomomasa Ueda

IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/22 ,  H01L29/76 ,  H01L43/08

CPC分类号： H01L43/08 ,  B82Y10/00 ,  H01L27/228

摘要： In a magnetic random access memory for generating an inductive magnetic flux by passing current into write wirings disposed closely to MTJ elements, whose resistance values varying depending on the magnetization array state of two magnetic layers of MTJ elements including two magnetic layers that hold a non-magnetic layer correspond to the stored information of “0”/“1”, and writing information by varying the magnetization direction of a free layer of the MTJ elements, the shape of the MTJ elements is warped so as to coincide substantially with the magnetic field curve generated from the write wirings.

摘要翻译： 在磁性随机存取存储器中，用于通过将电流传递到靠近MTJ元件布置的写布线中来产生感应磁通量，其电阻值根据包括两个磁性层的MTJ元件的两个磁性层的磁化阵列状态而变化， 磁性层对应于“0”/“1”的存储信息，并且通过改变MTJ元件的自由层的磁化方向来写入信息，MTJ元件的形状被扭曲以与磁场大体一致 从写布线产生的曲线。

公开(公告)号：US06737691B2

公开(公告)日：2004-05-18

申请号：US10327910

申请日：2002-12-26

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： H01L31062

CPC分类号： H01L43/08 ,  B82Y10/00 ,  H01L27/224 ,  H01L27/228

摘要： A data selection line (write line) is disposed right on a MTJ element. Upper and side surfaces of the data selection line are coated with yoke materials which have a high permeability. The yoke materials are separated from each other by a barrier layer. Similarly, a write word line is disposed right under the MTJ element. The lower and side surfaces of the write word line are also coated with the yoke materials which have the high permeability. The yoke materials on the lower and side surfaces of the write word line are also separated from each other by the barrier layer.

摘要翻译： 数据选择线（写入线）被放置在MTJ元件上。 数据选择线的上表面和侧表面涂覆有磁导率高的磁轭材料。 磁轭材料通过阻挡层彼此分离。 类似地，写字线被布置在MTJ元件的正下方。 写字线的下表面和侧表面也涂有具有高磁导率的磁轭材料。 写字线的下表面和侧表面上的轭材料也通过阻挡层彼此分离。

公开(公告)号：US06661689B2

公开(公告)日：2003-12-09

申请号：US10025753

申请日：2001-12-26

申请人： Yoshiaki Asao ,  Hiroshi Ito

发明人： Yoshiaki Asao ,  Hiroshi Ito

IPC分类号： G11C506

CPC分类号： G11C5/063 ,  G11C11/15

摘要： A semiconductor memory device includes a plurality of first wirings extending in a first direction, a plurality of memory elements connected with the first wirings, a plurality of second wirings extending in a second direction different from the first direction, the second wirings being disposed opposite to the first wirings with the memory elements interposed between the first and second wirings, the second wirings being spaced from the memory elements, and first transistors or diodes connected between two adjacent of the second wirings.

公开(公告)号：US5696401A

公开(公告)日：1997-12-09

申请号：US623941

申请日：1996-03-29

申请人： Tomohisa Mizuno ,  Yoshiaki Asao

发明人： Tomohisa Mizuno ,  Yoshiaki Asao

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/739 ,  H01L29/76 ,  H01L31/062 ,  H01L31/113 ,  H01L29/54

CPC分类号： H01L29/1033 ,  H01L29/1083 ,  H01L29/7395

摘要： An MOSFET has the essential feature lying in that the depths of well regions are different between a channel region and a diffusion region under a gate electrode to suppress charges in depletion layers. The MOSFET comprises a first well region which is formed in the channel region of a substrate below a gate electrode, and has a PN junction shallower than the sum of the width of a channel depletion layer formed by a voltage applied to the gate electrode and the width of a depletion layer formed by a substrate voltage of the substrate, and a second well region which is formed in source and drain regions to extend to the first well region, and has a PN junction deeper than the sum of the width of a depletion layer formed in the source or drain region and the width of a depletion layer formed in the first well region by the substrate voltage of the substrate.

摘要翻译： MOSFET的基本特征在于阱区的深度在栅电极下方的沟道区和扩散区之间是不同的，以抑制耗尽层中的电荷。 MOSFET包括形成在栅电极下方的衬底的沟道区域中的第一阱区，并且具有比由施加到栅电极的电压形成的沟道耗尽层的宽度的和更浅的PN结， 由衬底的衬底电压形成的耗尽层的宽度，以及形成在源极和漏极区中以延伸到第一阱区的第二阱区，并且具有比漏极宽度的和更深的PN结 在源极或漏极区域中形成的层以及通过衬底的衬底电压在第一阱区中形成的耗尽层的宽度。