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    Non-volatile memory device and method of fabricating the same
    82.
    发明申请
    Non-volatile memory device and method of fabricating the same 审中-公开
    非易失性存储器件及其制造方法

    公开(公告)号：US20090273054A1

    公开(公告)日：2009-11-05

    申请号：US12382106

    申请日：2009-03-09

    申请人： Suk-pil Kim ,  Won-joo Kim ,  Seung-hoon Lee

    发明人： Suk-pil Kim ,  Won-joo Kim ,  Seung-hoon Lee

    IPC分类号： H01L29/68

    CPC分类号： H01L27/115 ,  H01L27/11206 ,  H01L27/24

    摘要： A non-volatile memory device and methods of fabricating the device according to example embodiments involve a stacked layer structure. The non-volatile memory device may include at least one first horizontal electrode including a first sidewall and a second sidewall; at least one second horizontal electrode including a third sidewall and a fourth sidewall; wherein the third sidewall may be disposed to face the first sidewall; at least one vertical electrode may be interposed between the first sidewall and the third sidewall, in such a way as to cross or intersect each of the at least one first and second horizontal electrodes, and; at least one data storage layer that may be capable of locally storing a change of electrical resistance may be interposed where the at least one first horizontal electrode and the at least one vertical electrode cross or intersect and where the at least one horizontal electrode and the at least one vertical electrodes cross or intersect.

    摘要翻译： 根据示例实施例的非易失性存储器件和制造器件的方法涉及堆叠层结构。 非易失性存储器件可以包括至少一个包括第一侧壁和第二侧壁的第一水平电极; 至少一个第二水平电极，包括第三侧壁和第四侧壁; 其中所述第三侧壁可以被设置为面对所述第一侧壁; 至少一个垂直电极可以插入在第一侧壁和第三侧壁之间，以便使得至少一个第一和第二水平电极中的每一个交叉或相交， 可以插入至少一个能够局部存储电阻变化的数据存储层，其中至少一个第一水平电极和至少一个垂直电极交叉或相交，并且其中至少一个水平电极和at 至少一个垂直电极交叉或相交。

    Non-volatile memory device and method of fabricating the same
    83.
    发明申请
    Non-volatile memory device and method of fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20090184360A1

    公开(公告)日：2009-07-23

    申请号：US12285403

    申请日：2008-10-03

    申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Suk-pil Kim ,  Seung-hoon Lee

    发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Suk-pil Kim ,  Seung-hoon Lee

    IPC分类号： H01L29/788 ,  H01L29/792 ,  H01L21/336

    CPC分类号： H01L21/28282 ,  H01L21/28273 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

    摘要： Provided are a non-volatile memory device that may expand to a stacked structure and may be more easily highly integrated and an economical method of fabricating the non-volatile memory device. The non-volatile memory device may include at least one semiconductor column. At least one first control gate electrode may be arranged on a first side of the at least one semiconductor column. At least one second control gate electrode may be arranged on a second side of the at least one semiconductor column. A first charge storage layer may be between the at least one first control gate electrode and the at least one semiconductor column. A second charge storage layer may be between the at least one second control gate electrode and the at least one semiconductor column.

    摘要翻译： 提供了可以扩展到堆叠结构并且可以更容易地高度集成的非易失性存储器件，以及制造非易失性存储器件的经济方法。 非易失性存储器件可以包括至少一个半导体柱。 至少一个第一控制栅电极可以布置在至少一个半导体柱的第一侧上。 至少一个第二控制栅电极可以布置在至少一个半导体柱的第二侧上。 第一电荷存储层可以在至少一个第一控制栅电极和至少一个半导体柱之间。 第二电荷存储层可以在至少一个第二控制栅极电极和至少一个半导体柱之间。

    Method of operating nonvolatile memory device
    84.
    发明申请
    Method of operating nonvolatile memory device 审中-公开
    操作非易失性存储器件的方法

    公开(公告)号：US20090109761A1

    公开(公告)日：2009-04-30

    申请号：US12076310

    申请日：2008-03-17

    申请人： Young-gu Jin ,  Won-joo Kim ,  Suk-pil Kim ,  Yoon-dong Park ,  Seung-hoon Lee

    发明人： Young-gu Jin ,  Won-joo Kim ,  Suk-pil Kim ,  Yoon-dong Park ,  Seung-hoon Lee

    IPC分类号： G11C16/20

    CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C16/10

    摘要： Provided is a method of operating a three-dimensional nonvolatile memory device which may increase the reliability and efficiency of the three-dimensional nonvolatile memory device. The method of operating a nonvolatile memory device may include: resetting the nonvolatile memory device by injecting charges into charge storage layers of a plurality of memory cells of a block; and setting the nonvolatile memory device by removing at least some of the charges injected into the charge storage layers of one or more memory cells selected from among the plurality of memory cells.

    摘要翻译： 提供了一种操作三维非易失性存储器件的方法，其可以增加三维非易失性存储器件的可靠性和效率。 操作非易失性存储器件的方法可以包括：通过向块的多个存储单元的电荷存储层注入电荷来复位非易失性存储器件; 以及通过去除从多个存储单元中选择的一个或多个存储单元的电荷存储层中注入的电荷中的至少一些电荷来设置非易失性存储器件。

    Columnar non-volatile memory devices with auxiliary transistors and methods of operating the same
    87.
    发明授权
    Columnar non-volatile memory devices with auxiliary transistors and methods of operating the same 有权
    具有辅助晶体管的柱状非易失性存储器件及其操作方法

    公开(公告)号：US08064254B2

    公开(公告)日：2011-11-22

    申请号：US12493935

    申请日：2009-06-29

    申请人： Suk-pil Kim ,  Yoon-dong Park

    发明人： Suk-pil Kim ,  Yoon-dong Park

    IPC分类号： G11C11/34

    CPC分类号： H01L21/28273 ,  G11C16/10 ,  H01L21/28282 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/42328 ,  H01L29/42344 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7883 ,  H01L29/792 ,  H01L29/7926

    摘要： A non-volatile memory device includes at least one semiconductor column having a first sidewall and a second sidewall. The device also includes at least one gate electrode is disposed on the first sidewall and at least one control gate electrode disposed on the second sidewall. The device further includes at least one charge storage layer is disposed between the second sidewall and the at least one control gate electrode. The at least one gate electrode and the at least one control gate electrode may be disposed on opposite sides of the at least one semiconductor column such that they commonly control a channel region in the semiconductor column.

    摘要翻译： 非易失性存储器件包括至少一个具有第一侧壁和第二侧壁的半导体柱。 该器件还包括设置在第一侧壁上的至少一个栅电极和设置在第二侧壁上的至少一个控制栅电极。 该装置还包括至少一个电荷存储层设置在第二侧壁和至少一个控制栅电极之间。 至少一个栅电极和至少一个控制栅电极可以设置在至少一个半导体柱的相对侧上，使得它们共同地控制半导体柱中的沟道区。