摘要:
An SRAM memory cell is provided having a pair of cross-coupled CMOS inverters. The sources of the pull-up transistors forming each of the CMOS inverters are coupled to VCC through parasitic resistance of the substrate in which each is formed. The source of the p-type pull-up transistor is therefore always at a potential less than or equal to the potential of the N-well such that the emitter-base junction of the parasitic PNP transistor cannot become forward biased and latch-up cannot occur.
摘要:
A method of finding an unknown value from within a range of values is disclosed that divides the range into weighted subranges and then, beginning with an arbitrary search value within the range, performs a number of simple comparisons to determine the value for each subrange that will result in a match with the target value. This method can also detect those cases where the target value lies outside the range. In one embodiment, the method of finding an unknown value within a range of values is applied to impedance matching. In this embodiment, the output impedance of a pin on an integrated circuit is automatically matched to the impedance of the load connected to it. The output driver has a controllable impedance that can be adjusted within a specific range of impedances to match the external load impedance it is to drive.
摘要:
The invention includes digital logic devices with extremely skewed trip points and reset circuitry for rapidly propagating signal edges. Embodiments of skewed logic devices in accordance with the present invention include inverters, buffers, NOR gates and NAND gates for rapidly propagating a selected “fast” edge of an input signal. Additional embodiments include pulse stretchers, memory devices, substrates, computer systems and methods incorporating the skewed logic devices of the present invention. Each embodiment of a skewed logic device of the present invention is configured to propagate either a fast rising edge or fast falling edge of an output signal, i.e., the “fast” edge, at rates comparable to those of domino logic. An advantage of the skewed logic devices of the present invention over conventional CMOS logic devices is rapid edge propagation. Additionally, virtually all of the input gate loading is devoted to the fast edge being propagated. Additionally, the reset networks, as disclosed herein, are buffered by at least two gates, thus reducing loading seen by the input or the output of the skewed logic device.
摘要:
Systems and methods are provided for a temperature-compensated threshold voltage VT. The stability problems associated with temperature changes are reduced for LL4TCMOS SRAM cells by providing a temperature-compensated VTN. According to one embodiment, a temperature-based modulation of a VBB potential back-biases a triple-well transistor with a temperature-compensated voltage to provide the pull-down transistor with a temperature-compensated VTN that is flat or relatively flat with respect to temperature. One embodiment provides a bias generator, including a charge pump coupled to a body terminal of the transistor(s), and a comparator coupled to the charge pump. The comparator includes a first input that receives a reference voltage, a second input that receives a VT-dependent voltage, and an output that presents a control signal to the charge pump and causes the charge pump to selectively charge the body terminal of the transistor to compensate for temperature changes.
摘要:
A protected faceplate structure of a field emission display device is disclosed in one embodiment. Specifically, in one embodiment, the present invention recites a faceplate of a field emission display device wherein the faceplate of the field emission display device is adapted to have phosphor containing areas disposed above one side thereof. The present embodiment is further comprised of a barrier layer which is disposed over the one side of said faceplate which is adapted to have phosphor containing areas disposed thereabove. The barrier layer of the present embodiment is adapted to prevent degradation of the faceplate. Specifically, the barrier layer of the present embodiment is adapted to prevent degradation of the faceplate due to electron bombardment by electrons directed towards the phosphor containing areas.
摘要:
The invention includes digital logic devices with extremely skewed trip points and reset circuitry for rapidly propagating signal edges. Embodiments of skewed logic devices in accordance with the present invention include inverters, buffers, NOR gates and NAND gates for rapidly propagating a selected “fast” edge of an input signal. Additional embodiments include pulse stretchers, memory devices, substrates, computer systems and methods incorporating the skewed logic devices of the present invention. Each embodiment of a skewed logic device of the present invention is configured to propagate either a fast rising edge or fast falling edge of an output signal, i.e., the “fast” edge, at rates comparable to those of domino logic. An advantage of the skewed logic devices of the present invention over conventional CMOS logic devices is rapid edge propagation. Additionally, virtually all of the input gate loading is devoted to the fast edge being propagated. Additionally, the reset networks, as disclosed herein, are buffered by at least two gates, thus reducing loading seen by the input or the output of the skewed logic device.
摘要:
A method of finding an unknown value from within a range of values is disclosed that divides the range into weighted subranges and then, beginning with an arbitrary search value within the range, performs a number of simple comparisons to determine the value for each subrange that will result in a match with the target value. This method can also detect those cases where the target value lies outside the range. In one embodiment, the method of finding an unknown value within a range of values is applied to impedance matching. In this embodiment, the output impedance of a pin on an integrated circuit is automatically matched to the impedance of the load connected to it. The output driver has a controllable impedance that can be adjusted within a specific range of impedances to match the external load impedance it is to drive.
摘要:
Systems, data paths and methods of transferring data. By utilizing the systems, data paths, and methods, data can be transferred at a single or double rate. One embodiment of the present invention provides a system having a data unit, an output register, and a holding register. The output register is coupled to the data unit. The holding register is coupled to the data unit and the output register. Data from the data unit is passed to the output register and the holding register substantially simultaneously and data from the holding register is then passed to the output register. Data can be output from the output register.
摘要:
A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a wall which is held in place by a structure formed either on the faceplate or on the backplate. In one embodiment the supporting structure is formed by two adjacent walls that form a slot which mechanically restrains the wall. In another embodiment a slot is formed within the faceplate and the walls of the slot mechanically restrain the wall. In one embodiment wall segments are inserted into supporting structures that mechanically restrain each wall segment. In another embodiment a UV curable or a heat curable adhesive is used to maintain walls in their proper alignment and position. In yet another embodiment a conductive material is melted so as to bond conductive lines located on the wall and conductive lines located on the faceplate. This bond electrically connects the conductive lines located on the wall and the conductive lines located on the faceplate and maintains the wall in the proper alignment. The present invention eliminates the need for feet which attach to individual walls for maintaining the walls in the proper alignment.
摘要:
A light-emitting structure contains a plate (20), light-emissive regions (34R, 36G, and 38B) overlying the plate, and a dark region (40DR/46DC, 40IR/56DC, 60DR/66DC, or 76DR/80DR/80DC) overlying the plate and laterally surrounding each light-emissive region. In one aspect, the dark region is formed with (a) multiple first strips (40DR, 40IR, 60DR, or 76DR) extending in one direction and (b) multiple second strips (46DC, 56DC, 66DC, or 80DC) extending in another direction and also extending further away from the plate than the first strips. In another aspect, the dark region contains trapezoidally profiled strips (86), each having a width profile shaped like an upright trapezoid.