利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

204 条记录 (耗时 0.026 秒)

    Electrophotographic developing device incorporating a developing electrode having an insulation layer on its surface
    82.
    发明授权
    Electrophotographic developing device incorporating a developing electrode having an insulation layer on its surface 失效
    包括其表面上具有绝缘层的显影电极的电子照相显影装置

    公开(公告)号：US4086873A

    公开(公告)日：1978-05-02

    申请号：US768279

    申请日：1977-02-14

    申请人： Sizuo Morita ,  Hiroshi Thuchiya ,  Kiyoshi Kimura

    发明人： Sizuo Morita ,  Hiroshi Thuchiya ,  Kiyoshi Kimura

    IPC分类号： G03G15/08 ,  G03G15/09

    CPC分类号： G03G15/0801 ,  G03G15/0907

    摘要： This application discloses an electrophotographic developing device having an electrode located at the developing station oppositely to an electrostatic latent image bearing body wherein said electrostatic latent image is developed with a developer that consists of an electrically conductive carrier and toner. Development occurs while applying a bias voltage between said body and said electrode which has an insulation layer on its surface.

    摘要翻译： 本申请公开了一种电子照相显影装置，其具有位于与静电潜像承载体相对的显影站处的电极，其中所述静电潜像用由导电载体和调色剂组成的显影剂显影。 在所述主体和所述电极之间施加偏置电压时，发生显影，所述电极在其表面上具有绝缘层。

    Power semiconductor device and method for manufacturing same
    84.
    发明授权
    Power semiconductor device and method for manufacturing same 失效
    功率半导体器件及其制造方法

    公开(公告)号：US08610210B2

    公开(公告)日：2013-12-17

    申请号：US12840201

    申请日：2010-07-20

    申请人： Hiroshi Ohta ,  Yasuto Sumi ,  Kiyoshi Kimura ,  Wataru Sekine ,  Wataru Saito ,  Syotaro Ono ,  Munehisa Yabuzaki ,  Nana Hatano ,  Miho Watanabe

    发明人： Hiroshi Ohta ,  Yasuto Sumi ,  Kiyoshi Kimura ,  Wataru Sekine ,  Wataru Saito ,  Syotaro Ono ,  Munehisa Yabuzaki ,  Nana Hatano ,  Miho Watanabe

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66712 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/7811

    摘要： According to one embodiment, a power semiconductor device includes a first semiconductor layer, and first, second and third semiconductor regions. The first semiconductor layer has a first conductivity type. The first semiconductor regions have a second conductivity type, and are formed with periodicity in a lateral direction in a second semiconductor layer of the first conductivity type. The second semiconductor layer is provided on a major surface of the first semiconductor layer in a device portion with a main current path formed in a vertical direction generally perpendicular to the major surface and in a terminal portion provided around the device portion. The second semiconductor region has the first conductivity type and is a portion of the second semiconductor layer sandwiched between adjacent ones of the first semiconductor regions. The third semiconductor regions have the second conductivity type and are provided below the first semiconductor regions in the terminal portion.

    摘要翻译： 根据一个实施例，功率半导体器件包括第一半导体层以及第一，第二和第三半导体区域。 第一半导体层具有第一导电类型。 第一半导体区域具有第二导电类型，并且在第一导电类型的第二半导体层中在横向方向上形成周期性。 第二半导体层设置在器件部分的第一半导体层的主表面上，其主电流通道形成在大体上垂直于主表面的垂直方向上，以及设置在器件部分周围的端子部分中。 第二半导体区域具有第一导电类型，并且是夹在相邻的第一半导体区域中的第二半导体层的一部分。 第三半导体区域具有第二导电类型并且设置在端子部分中的第一半导体区域的下方。

    Motor controlling device
    85.
    发明授权
    Motor controlling device 有权
    电机控制装置

    公开(公告)号：US08421396B2

    公开(公告)日：2013-04-16

    申请号：US12987299

    申请日：2011-01-10

    申请人： Jun Yamada ,  Shigeru Kamio ,  Kiyoshi Kimura

    发明人： Jun Yamada ,  Shigeru Kamio ,  Kiyoshi Kimura

    IPC分类号： H02P25/00 ,  H02P25/08

    CPC分类号： G05B7/02

    摘要： A motor controlling device includes an encoder to output pulse signals with a predetermined angle interval as a rotor of a motor is rotated. An energized phase of the motor is sequentially switched by detecting a rotation position of the rotor based on a value of counting the signals. An initial drive controlling portion executes an initial drive to switch the energized phase with a predetermined pattern after the device is activated so as to learn a relationship among the count value, the rotation position and the energized phase. An initial drive prohibiting portion prohibits the execution of the initial drive until a predetermined time is elapsed after the initial drive is finished.

    摘要翻译： 电动机控制装置包括编码器，当电动机的转子旋转时，输出具有预定角度间​​隔的脉冲信号。 基于对信号进行计数的值，通过检测转子的旋转位置来依次切换电动机的通电相位。 初始驱动控制部分在器件启动之后执行初始驱动以切换具有预定图案的通电相位，以便学习计数值，旋转位置和通电相位之间的关系。 初始驱动禁止部分禁止执行初始驱动，直到在初始驱动完成之后经过预定时间。

    Methods and compositions for inhibiting mycotoxin contamination in cereals
    86.
    发明授权
    Methods and compositions for inhibiting mycotoxin contamination in cereals 有权
    用于抑制谷物中霉菌毒素污染的方法和组合物

    公开(公告)号：US08197832B2

    公开(公告)日：2012-06-12

    申请号：US10537117

    申请日：2003-12-04

    申请人： Daisuke Awakura ,  Kiyoshi Kimura ,  Kazuyoshi Masuda

    发明人： Daisuke Awakura ,  Kiyoshi Kimura ,  Kazuyoshi Masuda

    IPC分类号： A01N25/00 ,  A23L3/34

    CPC分类号： A01N33/12 ,  A01N33/04 ,  A01N59/06 ,  A01N59/08 ,  A01N59/26

    摘要： We search for a cultivation method for reducing the amount of mycotoxin contamination in wheat which has been an important pending question for the quality in actual producing field of wheat and the health hazard risk for customers.The present invention discloses a method of reducing the contamination amount of mycotoxin in cereals characterized in that one or more compounds A selected from the group consisting of ammonium salts, primary to quaternary ammonium salts, alkali metal salts, alkaline earth metal salts and polyvalent metal salts of phosphorous acid and phosphite ester are given to the cereals.

    摘要翻译： 我们寻求减少小麦真菌毒素污染量的培养方法，这是小麦实际生产领域质量的重要问题，也是客户的健康危害风险。 本发明公开了一种减少谷物中霉菌毒素的污染量的方法，其特征在于，一种或多种选自铵盐，伯 - 季铵盐，碱金属盐，碱土金属盐和多价金属盐的化合物A 的磷酸和亚磷酸酯被给予谷物。

    SHIFT-BY-WIRE SYSTEM
    87.
    发明申请
    SHIFT-BY-WIRE SYSTEM 有权
    移动式绕线系统

    公开(公告)号：US20120123653A1

    公开(公告)日：2012-05-17

    申请号：US13296476

    申请日：2011-11-15

    申请人： Kiyoshi Kimura ,  Masaaki Shinojima ,  Jun Yamada

    发明人： Kiyoshi Kimura ,  Masaaki Shinojima ,  Jun Yamada

    IPC分类号： B60W10/06 ,  B60W10/10 ,  F16H61/02

    CPC分类号： B60W10/06 ,  B60W10/10 ,  F16H59/105 ,  F16H61/02 ,  F16H61/28 ,  F16H61/32 ,  F16H63/38 ,  F16H2061/0087 ,  F16H2061/283 ,  F16H2061/326

    摘要： When a vehicle electric power source is turned on, and when a target mode position is other than a P-mode position and a D-mode position or the target mode position is unfixed, an SBW-ECU does not drive the actuator so that the current actual mode position is maintained. The SBW-ECU accepts only the driver's requirement for changing the mode position to the P-mode position or the D-mode position. When it is required to change the mode position to the P-mode position, a first position learning portion learns a first reference position. When it is required to change the mode position to the D-mode position, a second position learning portion learns a second reference position.

    摘要翻译： 当车辆电源接通时，并且当目标模式位置不是P模式位置和D模式位置或目标模式位置不固定时，SBW-ECU不驱动致动器，使得 保持当前实际模式位置。 SBW-ECU仅接受驾驶员将模式位置更改为P模式位置或D模式位置的要求。 当需要将模式位置改变为P模式位置时，第一位置学习部分学习第一参考位置。 当需要将模式位置改变为D模式位置时，第二位置学习部分学习第二参考位置。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    88.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20110291181A1

    公开(公告)日：2011-12-01

    申请号：US13149345

    申请日：2011-05-31

    申请人： Hiroyuki IRIFUNE ,  Yasuto Sumi ,  Kiyoshi Kimura ,  Hiroshi Ohta

    发明人： Hiroyuki IRIFUNE ,  Yasuto Sumi ,  Kiyoshi Kimura ,  Hiroshi Ohta

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/66712 ,  H01L29/0626 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813

    摘要： According to one embodiment, a semiconductor device including a cell region and a terminal region includes a first semiconductor region of a first conductivity type, semiconductor pillars of the first and a second conductivity type, a second semiconductor region of the second conductivity type, and a third semiconductor region of the first conductivity type. The semiconductor pillars of the first and second conductivity type are and arranged alternately on the first semiconductor region. The second semiconductor region is provided on the semiconductor pillar of the second conductivity type. The third semiconductor region is provided on the second semiconductor region. A semiconductor pillar other than a semiconductor pillar most proximal to the terminal region is provided in a stripe configuration. The semiconductor pillar most proximal to the terminal region includes regions having a high and a low impurity concentration. The regions are provided alternately.

    摘要翻译： 根据一个实施例，包括单元区域和端子区域的半导体器件包括第一导电类型的第一半导体区域，第一和第二导电类型的半导体柱，第二导电类型的第二半导体区域和 第一导电类型的第三半导体区域。 第一和第二导电类型的半导体柱交替地布置在第一半导体区域上。 第二半导体区域设置在第二导电类型的半导体柱上。 第三半导体区域设置在第二半导体区域上。 最靠近端子区域的半导体柱以外的半导体柱设置成条状。 最靠近末端区域的半导体柱包括具有高和低杂质浓度的区域。 这些区域交替地设置。

    Switched reluctance motor
    90.
    发明授权
    Switched reluctance motor 有权
    开关磁阻电机

    公开(公告)号：US07948145B2

    公开(公告)日：2011-05-24

    申请号：US12343575

    申请日：2008-12-24

    申请人： Seiji Nakayama ,  Taku Itoh ,  Kiyoshi Kimura

    发明人： Seiji Nakayama ,  Taku Itoh ,  Kiyoshi Kimura

    IPC分类号： H02K19/10 ,  H02K1/14 ,  H02K1/24

    CPC分类号： H02K37/04

    摘要： A plurality of concavities and convexities is provided on tips of all rotor teeth 24 of the SR motor 5. Depths of the concave portions α are deep on an edge side where a stator tooth 23 and rotor tooth 24 first approach and are shallow as a facing area between the stator tooth 23 and rotor tooth 24 increases. Therefore, magnetic resistance between the stator tooth 23 and rotor tooth 24 becomes high at an early stage of the stator tooth 23 and rotor tooth 24 facing each other and becomes low as the facing area between the stator tooth 23 and rotor tooth 24 increases. As a result, torque fluctuation can be suppressed at a time of a large current and a minimum generation torque can be increased at a time of a small current.

    摘要翻译： 在SR马达5的所有转子齿24的尖端上设置多个凹凸。凹部α的深度在定子齿23和转子齿24首先进入并且浅的面的边缘侧是深的 定子齿23与转子齿24之间的区域增加。 因此，定子齿23和转子齿24之间的磁阻在定子齿23和转子齿24彼此面对的早期变高，随着定子齿23和转子齿24之间的相对面积的增加而变低。 结果，可以在大电流时抑制转矩波动，并且可以在小电流时增加最小的发电转矩。