GARDENING BOX
    81.
    发明申请
    GARDENING BOX 审中-公开
    园艺盒

    公开(公告)号:US20150052808A1

    公开(公告)日:2015-02-26

    申请号:US14010318

    申请日:2013-08-26

    CPC classification number: A01G27/06

    Abstract: A gardening box is disclosed. The gardening box may include a main body having a receiving space; a separation board having a plurality of through holes to secure water absorbing units and dividing said receiving space into an upper space and a bottom space; a plurality of observing holes located at a lower portion outside the main body; and a plurality of water absorbing unit secured at the separation board, and a lower portion of the water absorbing unit exposes at the bottom space to absorb water from the bottom space to moisturize soil and plants thereabove. Water level can be observed from the observing holes because the water level of the bottom space is identical to the observing holes according to the law of communicating vases.

    Abstract translation: 公开了园艺盒。 园艺盒可以包括具有容纳空间的主体; 分离板,具有多个通孔以固定吸水单元,并将所述容纳空间分成上部空间和底部空间; 多个观察孔,位于主体外部的下部; 以及多个吸水单元,其固定在分离板上,并且吸水单元的下部在底部空间处露出,以从底部空间吸收水分,从而对其上方的土壤和植物进行滋润。 水位可以从观察孔观察到,因为根据连通花瓶的规律,底部空间的水位与观察孔相同。

    LED activated photocatalyst air filter
    84.
    发明授权
    LED activated photocatalyst air filter 有权
    LED活化光催化剂空气过滤器

    公开(公告)号:US08911670B2

    公开(公告)日:2014-12-16

    申请号:US13197428

    申请日:2011-08-03

    Inventor: Li Wang Xuanbin Liu

    Abstract: The present disclosure provides devices and methods for making a light emitting diode (LED) activated photocatalyst air filter. One or more embodiments include a filter material that includes a photocatalyst, and a frame that includes an array of a number of LEDs positioned on the frame to project a wavelength of light directed toward the filter material, wherein the array of LEDs is positioned a distance from the filter material.

    Abstract translation: 本公开提供了制造发光二极管(LED)活化光催化剂空气过滤器的装置和方法。 一个或多个实施例包括包括光催化剂的过滤材料,以及框架,其包括位于框架上的多个LED的阵列以投射指向过滤材料的光的波长,其中LED阵列定位在距离 从过滤材料。

    End of service life indicator for organic vapor respirator filter cartridge
    86.
    发明授权
    End of service life indicator for organic vapor respirator filter cartridge 有权
    有机蒸汽呼吸器滤芯使用寿命指示器

    公开(公告)号:US08859995B2

    公开(公告)日:2014-10-14

    申请号:US13536019

    申请日:2012-06-28

    CPC classification number: A62B9/006 A62B18/088 G01N21/77 G01N2021/7786

    Abstract: Embodiments generally relate to detection of end of service life for respirator filter cartridges for organic vapor(s). Typically, detection of end of service life might use a competitive UV absorbance-fluorescence approach. Thus, a sensor that emits light upon application of UV may be placed within the cartridge, with a UV lamp and a light detector directed at the sensor. In some embodiments, a plurality of corresponding sensor and UV lamp and light detector might be used. Typically, the light level emitted by the sensor(s) might be used to estimate effective end of service life.

    Abstract translation: 实施例通常涉及用于有机蒸气的呼吸器滤芯的使用寿命终止的检测。 通常,检测使用寿命可能会使用竞争性的紫外吸收 - 荧光法。 因此,在施加UV时发出光的传感器可以被放置在盒内,UV灯和指向传感器的光检测器。 在一些实施例中,可以使用多个对应的传感器和UV灯和光检测器。 通常,由传感器发射的光级可用于估计有效的使用寿命。

    Closed loop optimization of A-V and V-V timing
    87.
    发明授权
    Closed loop optimization of A-V and V-V timing 有权
    闭环优化A-V和V-V定时

    公开(公告)号:US08755882B2

    公开(公告)日:2014-06-17

    申请号:US12962245

    申请日:2010-12-07

    Applicant: Li Wang

    Inventor: Li Wang

    Abstract: Embodiments of close loop optimization of atrio-ventricular (A-V) delay interval and/or inter-ventricular (V-V) timing are disclosed. An implantable medical device includes a housing that supports a processing means adapted for implantation in a patient. There can be two or more electrodes electrically coupled to the processing means where the two or more electrodes can be used for sensing a patient's cardiac signals, which include a far-field EGM. The processing means can determine a width of a P-wave from the sensed far-field EGM. Also included can be a means for delivering an adapted cardiac pacing therapy based upon the width of the P-wave, including revised A-V delay and/or V-V temporal intervals.

    Abstract translation: 公开了房室(A-V)延迟间隔和/或心室间(V-V)定时的闭环优化的实施例。 可植入医疗装置包括支撑适于植入患者体内的处理装置的外壳。 可以有两个或更多个电极耦合到处理装置的电极,其中两个或更多个电极可用于感测患者的心脏信号,其包括远场EGM。 处理装置可以从感测的远场EGM确定P波的宽度。 还包括可以用于基于P波的宽度(包括修正的A-V延迟和/或V-V时间间隔)递送适应的心脏起搏治疗的手段。

    Method for making sulfur-graphene composite material
    89.
    发明授权
    Method for making sulfur-graphene composite material 有权
    制备硫 - 石墨烯复合材料的方法

    公开(公告)号:US08609183B2

    公开(公告)日:2013-12-17

    申请号:US13545170

    申请日:2012-07-10

    Abstract: A method for making sulfur-graphene composite material is disclosed. In the method, a dispersed solution including a solvent and a plurality of graphene sheets dispersed in the solvent is provided. A sulfur-source chemical compound is dissolved into the dispersed solution to form a mixture. A reactant, according to the sulfur-source chemical compound, is introduced to the mixture. Elemental sulfur is produced on a surface of the plurality of graphene sheets due to a redox reaction between the sulfur-source chemical compound and the reactant, to achieve the sulfur-graphene composite material. The sulfur-graphene composite material is separated from the solvent.

    Abstract translation: 公开了制备硫 - 石墨烯复合材料的方法。 在该方法中,提供了包含溶剂和分散在溶剂中的多个石墨烯片的分散溶液。 将硫源化合物溶解在分散溶液中以形成混合物。 将根据硫源化合物的反应物引入混合物中。 由于硫源化合物和反应物之间的氧化还原反应,在多个石墨烯片的表面上产生元素硫,以实现硫 - 石墨烯复合材料。 硫 - 石墨烯复合材料与溶剂分离。

    Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperature
    90.
    发明授权
    Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperature 有权
    在低温下制造p型III-V族氮化物半导体材料的低电阻率欧姆接触的方法

    公开(公告)号:US08431475B2

    公开(公告)日:2013-04-30

    申请号:US12159835

    申请日:2007-08-31

    CPC classification number: H01L33/0095 H01L33/32 H01L33/40

    Abstract: One embodiment of the present invention provides a method for fabricating a group III-V nitride structure with an ohmic-contact layer. The method involves fabricating a group III-V nitride structure with a p-type layer. The method further involves depositing an ohmic-contact layer on the p-type layer without first annealing the p-type layer. The method also involves subsequently annealing the p-type layer and the ohmic-contact layer in an annealing chamber at a predetermined temperature for a predetermined period of time, thereby reducing the resistivity of the p-type layer and the ohmic contact in a single annealing process.

    Abstract translation: 本发明的一个实施例提供了一种用欧姆接触层制造III-V族氮化物结构的方法。 该方法包括用p型层制造III-V族氮化物结构。 该方法还包括在p型层上沉积欧姆接触层,而不首先退火p型层。 该方法还包括随后在预定温度下在退火室中退火预定时间段内的p型层和欧姆接触层,从而降低单一退火中p型层的电阻率和欧姆接触 处理。

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