公开(公告)号：US20120302033A1

公开(公告)日：2012-11-29

申请号：US13554789

申请日：2012-07-20

申请人： Makoto Yasuda ,  Akiyoshi Watanabe ,  Yoshihiro Matsuoka

发明人： Makoto Yasuda ,  Akiyoshi Watanabe ,  Yoshihiro Matsuoka

IPC分类号： H01L21/02

CPC分类号： H01L27/0629 ,  H01L27/0805 ,  H01L29/66181 ,  H01L29/94

摘要： The semiconductor device comprises a device isolation region formed in a semiconductor substrate, a lower electrode formed in a device region defined by the device isolation region and formed of an impurity diffused layer, a dielectric film of a thermal oxide film formed on the lower electrode, an upper electrode formed on the dielectric film, an insulation layer formed on the semiconductor substrate, covering the upper electrode, a first conductor plug buried in a first contact hole formed down to the lower electrode, and a second conductor plug buried in a second contact hole formed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrode is not formed in the device isolation region, whereby the short-circuit between the upper electrode and the lower electrode in the cavity can be prevented.

摘要翻译： 半导体器件包括形成在半导体衬底中的器件隔离区，形成在由器件隔离区限定并由杂质扩散层形成的器件区中的下电极，形成在下电极上的热氧化膜的电介质膜， 形成在电介质膜上的上电极，形成在半导体衬底上的覆盖上电极的绝缘层，埋在第一接触孔中的第一导体插塞，以及埋在第二触点中的第二导体插头 上部电极未形成在器件隔离区域中。 上部电极没有形成在器件隔离区域中，从而可以防止空腔中的上部电极和下部电极之间的短路。

公开(公告)号：US20080203493A1

公开(公告)日：2008-08-28

申请号：US12068692

申请日：2008-02-11

申请人： Makoto Yasuda

发明人： Makoto Yasuda

IPC分类号： H01L27/11 ,  H01L21/8238

CPC分类号： G11C11/412 ,  G11C11/40 ,  H01L21/76816 ,  H01L21/76895 ,  H01L21/8238 ,  H01L27/0207 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/1112 ,  H01L27/1116 ,  H01L28/20

摘要： A SRAM includes a first CMOS inverter of first and second MOS transistors connected in series, a second CMOS inverter of third and fourth MOS transistors connected in series and forming a flip-flop circuit together with the first CMOS inverter, and a polysilicon resistance element formed on a device isolation region, each of the first and third MOS transistors is formed in a device region of a first conductivity type and includes a second conductivity type drain region at an outer side of a sidewall insulation film of the gate electrode with a larger depth than a drain extension region thereof, wherein a source region is formed deeper than a drain extension region, the polysilicon gate electrode has a film thickness identical to a film thickness of the polysilicon resistance element, the source region and the polysilicon resistance element are doped with the same dopant element.

摘要翻译： SRAM包括串联连接的第一和第二MOS晶体管的第一CMOS反相器，串联连接的第三和第四MOS晶体管的第二CMOS反相器和与第一CMOS反相器一起形成触发器电路，以及形成的多晶硅电阻元件 在器件隔离区域上，第一和第三MOS晶体管中的每一个形成在第一导电类型的器件区域中，并且在栅电极的侧壁绝缘膜的外侧包括第二导电类型的漏极区，其具有较大的深度 其漏极延伸区域的漏极延伸区域形成为比漏极延伸区域更深的多晶硅栅电极的膜厚与多晶硅电阻元件的膜厚相同，源极区域和多晶硅电阻元件掺杂有 相同的掺杂剂元素。

公开(公告)号：US20060120767A1

公开(公告)日：2006-06-08

申请号：US11266320

申请日：2005-11-04

申请人： Satoru Miyamoto ,  Makoto Yasuda

发明人： Satoru Miyamoto ,  Makoto Yasuda

IPC分类号： G03G15/09

CPC分类号： G03G15/0907 ,  G03G9/0819 ,  G03G2215/0609

摘要： An image forming apparatus and process cartridge that achieves extended operating life of a two-component developer without generating such problems as toner scattering, etc. either in the initial period or over time. The gap between the image support member and the developer support member is set to 0.3±0.1 mm. A substance having a resin cover layer on the surface of a core material is used as the carrier. The resin cover layer provides a conductive covering layer comprising a tin dioxide layer on the surface of base particles and an indium oxide layer, and comprises conductive particles formed such that the oil adsorption is 10 to 300 mL/100 g. A substance that provides a bonding resin comprising a hybrid resin having vinyl polymers and polyester polymers is used as the toner. The amount of hybrid resin contained in relation to the amount of releasing agent is set to the range of 0.5 to 3.

摘要翻译： 一种图像形成装置和处理盒，其可以在初始阶段或时间内实现双组分显影剂的延长的使用寿命而不产生诸如调色剂散射等问题。 图像支撑构件和显影剂支撑构件之间的间隙设定为0.3±0.1mm。 使用在芯材表面具有树脂覆盖层的物质作为载体。 树脂覆盖层在基础颗粒的表面和氧化铟层上提供包含二氧化锡层的导电性覆盖层，并且包含形成为使得油吸附为10〜300mL / 100g的导电性粒子。 使用提供包含具有乙烯基聚合物和聚酯聚合物的杂化树脂的粘合树脂的物质作为调色剂。 含量相对于脱模剂的混合树脂的量设定在0.5〜3的范围。

公开(公告)号：US20050199933A1

公开(公告)日：2005-09-15

申请号：US10924956

申请日：2004-08-25

申请人： Makoto Yasuda ,  Akiyoshi Watanabe ,  Yoshihiro Matsuoka

发明人： Makoto Yasuda ,  Akiyoshi Watanabe ,  Yoshihiro Matsuoka

IPC分类号： H01L21/76 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/04 ,  H01L27/06 ,  H01L29/06

CPC分类号： H01L27/0629 ,  H01L27/0805 ,  H01L29/66181 ,  H01L29/94

摘要： The semiconductor device comprises a device isolation region 14 formed in a semiconductor substrate 10, a lower electrode 16 formed in a device region 12 defined by the device isolation region and formed of an impurity diffused layer, a dielectric film 18 of a thermal oxide film formed on the lower electrode, an upper electrode 20 formed on the dielectric film, an insulation layer 26 formed on the semiconductor substrate, covering he upper electrode, a first conductor plug 30a buried in a first contact hole 28a formed down to the lower electrode, and a second conductor plug 30b buried in a second contact hole 28b formed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrode 20 is not formed in the device isolation region 14, whereby the short-circuit between the upper electrode 20 and the lower electrode 16 in the cavity can be prevented. Thus, a capacitor of high reliability can be provided.

摘要翻译： 半导体器件包括形成在半导体衬底10中的器件隔离区域14，形成在由器件隔离区域限定并由杂质扩散层形成的器件区域12中的下电极16，形成有热氧化膜的电介质膜18 在下电极上形成在电介质膜上形成的上电极20，形成在半导体衬底上的绝缘层26，覆盖上电极，埋在第一接触孔28a中的第一导体插塞30a， 以及埋在第二接触孔28b中的第二导体插塞30b，其形成在上部电极上，上部电极未形成在器件隔离区域中。 上部电极20不形成在器件隔离区域14中，从而能够防止上部电极20与下部电极16之间在空腔内的短路。 因此，可以提供高可靠性的电容器。

公开(公告)号：US06780705B2

公开(公告)日：2004-08-24

申请号：US10339297

申请日：2003-01-10

申请人： Makoto Yasuda

发明人： Makoto Yasuda

IPC分类号： H01L218242

CPC分类号： H01L21/76897 ,  H01L21/28568 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/1052 ,  H01L28/75

摘要： A semiconductor device having: a semiconductor substrate having first and second regions defined in a principal surface of the semiconductor substrate; a first underlying film formed in the second region; a first lamination structure formed in a partial area of the first region, the first lamination structure having a conductive film and an insulating film stacked in this order from the substrate side; and a second lamination structure formed on the first underlying film and having a conductive film and an insulating film stacked in this order from the substrate side, wherein the insulating films of the first and second lamination structures are made of the same material and the height of the upper surface of the second lamination structure as measured from the principal surface of the semiconductor substrate is equal to or lower than the height of the upper surface of the first lamination structure as measured from the principal surface of the semiconductor substrate. Plug electrodes of a SAC structure are prevented from being electrically shorted when a plurality of elements having different heights are formed on the same substrate.

摘要翻译： 一种半导体器件，具有：具有限定在所述半导体衬底的主表面中的第一和第二区域的半导体衬底; 在第二区域形成的第一底层膜; 形成在所述第一区域的局部区域中的第一层叠结构，所述第一层压结构具有从所述基板侧依次层叠的导电膜和绝缘膜; 以及形成在所述第一底膜上并且具有从所述基板侧依次层叠的导电膜和绝缘膜的第二层压结构，其中所述第一和第二层压结构的绝缘膜由相同的材料制成， 从半导体衬底的主表面测量的第二层叠结构的上表面等于或低于从半导体衬底的主表面测量的第一层叠结构的上表面的高度。 当在同一基板上形成具有不同高度的多个元件时，防止SAC结构的插塞电极被电短路。

公开(公告)号：US06521934B2

公开(公告)日：2003-02-18

申请号：US09899269

申请日：2001-07-06

申请人： Makoto Yasuda

发明人： Makoto Yasuda

IPC分类号： H01L27108

CPC分类号： H01L21/76897 ,  H01L21/28568 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/1052 ,  H01L28/75

摘要： A semiconductor device having: a semiconductor substrate having first and second regions defined in a principal surface of the semiconductor substrate; a first underlying film formed in the second region; a first lamination structure formed in a partial area of the first region, the first lamination structure having a conductive film and an insulating film stacked in this order from the substrate side; and a second lamination structure formed on the first underlying film and having a conductive film and an insulating film stacked in this order from the substrate side, wherein the insulating films of the first and second lamination structures are made of the same material and the height of the upper surface of the second lamination structure as measured from the principal surface of the semiconductor substrate is equal to or lower than the height of the upper surface of the first lamination structure as measured from the principal surface of the semiconductor substrate. Plug electrodes of a SAC structure are prevented from being electrically shorted when a plurality of elements having different heights are formed on the same substrate.

摘要翻译： 一种半导体器件，具有：具有限定在所述半导体衬底的主表面中的第一和第二区域的半导体衬底; 在第二区域形成的第一底层膜; 形成在所述第一区域的局部区域中的第一层叠结构，所述第一层压结构具有从所述基板侧依次层叠的导电膜和绝缘膜; 以及第二层压结构，其形成在所述第一底膜上，并且具有从所述基板侧依次堆叠的导电膜和绝缘膜，其中所述第一和第二层压结构的绝缘膜由相同的材料制成， 从半导体衬底的主表面测量的第二层叠结构的上表面等于或低于从半导体衬底的主表面测量的第一层叠结构的上表面的高度。 当在同一基板上形成具有不同高度的多个元件时，防止SAC结构的插塞电极被电短路。

公开(公告)号：US06373905B1

公开(公告)日：2002-04-16

申请号：US09248116

申请日：1999-02-11

申请人： Makoto Yasuda ,  Shintaro Nakatani

发明人： Makoto Yasuda ,  Shintaro Nakatani

IPC分类号： H03D100

CPC分类号： H04N19/89 ,  H04N19/13 ,  H04N19/61 ,  H04N19/91

摘要： A decoding apparatus comprises: decoding means which receives a first code sequence of a hierarchical structure as an input, decodes a code sequence of a selected first layer and higher layers in the first code sequence, outputs a detection signal when an error is detected while the code sequence is being decoded, and detects a second code sequence indicating the start of the first layer and higher layers in a set code sequence parsing position of the first sequence; and means for setting a code sequence parsing position which receives the detection signal and sets the parsing position of the code sequence in such a way that code sequence parsing performed by the decoding means is returned from a point at which code sequence parsing is being performed to a point at which code sequence parsing has been performed in the first code sequence.

摘要翻译： 解码装置包括：解码装置，其接收分层结构的第一代码序列作为输入，对第一代码序列中所选择的第一层和更高层的代码序列进行解码，当检测到错误时输出检测信号， 代码序列被解码，并且检测指示第一层的开始的第二代码序列和第一序列的集合代码序列解析位置中的较高层; 以及用于设置代码序列解析位置的装置，其接收所述检测信号，并以所述解码装置执行的代码序列分析从执行代码序列解析的点返回到所述代码序列解析位置的方式来设置所述代码序列的解析位置， 在第一代码序列中执行代码序列解析的一个点。

公开(公告)号：US5323967A

公开(公告)日：1994-06-28

申请号：US943760

申请日：1992-09-11

申请人： Nobuhiko Tanaka ,  Tadashi Narabayashi ,  Hiroshi Miyano ,  Hideaki Takahashi ,  Katsumi Yamada ,  Makoto Yasuda

发明人： Nobuhiko Tanaka ,  Tadashi Narabayashi ,  Hiroshi Miyano ,  Hideaki Takahashi ,  Katsumi Yamada ,  Makoto Yasuda

IPC分类号： F04F5/46 ,  B05B7/04 ,  B05B7/00

CPC分类号： F04F5/461

摘要： A steam injector includes a casing having water supply port and a steam intake port, the casing being generally composed of two halves fastened integrally, a water nozzle and a steam nozzle both disposed in the casing and communicated with the water supply port and the steam intake port, respectively, a steam-water mixing nozzle disposed on the downstream side in the casing and a diffuser disposed further downstream side in the casing. The steam injector further includes a guide member such as guide vane or spacer ring for guiding the steam to the steam-water mixing nozzle. The steam injector may includes a needle valve disposed in a steam jetting nozzle, disposed axially in the central portion of the casing, which is provided with a heat transfer preventing structure such as hollow wall structure provided on the outer peripheral surface of the steam jetting nozzle. The water nozzle may be composed of a wear resisting material and the wear resisting material may be provided on the surfaces of the steam jetting nozzle and the diffuser.

摘要翻译： 蒸汽喷射器包括具有供水口和蒸汽进气口的壳体，该壳体通常由整体固定的两个半部组成，水喷嘴和蒸汽喷嘴两者均设置在壳体中并与供水口和蒸汽进气口连通 分别设置在壳体的下游侧的蒸汽 - 水混合喷嘴和设置在壳体中的下游侧的扩散器。 蒸汽喷射器还包括诸如导向叶片或间隔环的引导构件，用于将蒸汽引导到蒸汽 - 水混合喷嘴。 蒸汽喷射器可以包括设置在蒸汽喷嘴中的针阀，轴向设置在壳体的中心部分，其设置有传热防止结构，例如设置在蒸汽喷嘴的外周面上的中空壁结构 。 水喷嘴可以由耐磨材料构成，并且耐磨材料可以设置在蒸汽喷嘴和扩散器的表面上。

公开(公告)号：US5148021A

公开(公告)日：1992-09-15

申请号：US630554

申请日：1990-12-20

申请人： Yukio Okamoto ,  Satoshi Shimura ,  Konosuke Oishi ,  Masataka Koga ,  Makoto Yasuda ,  Takahashi Iino

发明人： Yukio Okamoto ,  Satoshi Shimura ,  Konosuke Oishi ,  Masataka Koga ,  Makoto Yasuda ,  Takahashi Iino

IPC分类号： G01N27/62 ,  H01J49/06 ,  H01J49/12 ,  H01J49/26

CPC分类号： H01J49/06

摘要： A mass spectrometer using a plasma ion source for analyzing an ultra-trace element includes a plasma generation system for generating a plasma including the composition of a sample, an ion beam formation system for extracting ions in the form of a beam from the plasma generating the ions, a mass spectrometry system for performing mass spectrometry of the ion beamn, and an ion detection system for detecting the ions subjected to the mass spectrometry, in which a lens system made up of a cylindrical first electrode, a cylindrical second electrode with a photon stopper disposed on the central axis thereof, and a cylindrical third electrode is further provided between the ion beam formation system and the mass spectrometry system. By the provision of the lens system, the ions generated in the plasma are transported more efficiently to the side of the mass spectrometry system and by the provision of the photon stopper in the above described position, it is achieved, with a simpler structure, to prevent photons from entering the ion detection system.

摘要翻译： 使用等离子体离子源分析超微量元素的质谱仪包括：等离子体产生系统，用于产生包含样品组成的等离子体;离子束形成系统，用于从等离子体中提取离子的形式， 离子，用于进行离子束的质谱分析的质谱系统和用于检测进行质谱分析的离子的离子检测系统，其中由圆柱形第一电极构成的透镜系统，具有光子的圆柱形第二电极 止动件设置在其中心轴上，并且在离子束形成系统和质谱系统之间还设置有圆柱形的第三电极。 通过设置透镜系统，在等离子体中产生的离子更有效地传输到质谱系统的侧面，并且通过在上述位置提供光子停止器，以更简单的结构实现 防止光子进入离子检测系统。

公开(公告)号：US5086255A

公开(公告)日：1992-02-04

申请号：US473430

申请日：1990-02-01

申请人： Yukio Okamoto ,  Makoto Yasuda ,  Masataka Koga

发明人： Yukio Okamoto ,  Makoto Yasuda ,  Masataka Koga

IPC分类号： H01J49/12 ,  H01J49/10 ,  H05H1/46

CPC分类号： H01J49/105 ,  H05H1/46

摘要： A microwave induced plasma source includes a coaxial waveguide made up of a cylindrical outer conductor and an inner conductor which has the form of a helical coil, a discharge tube inserted into the helical coil in the axial direction thereof, and having an inner tube for introducing a sample and an outer tube for introducing a plasma gas so that a double tube structure is formed, a discharge-tube cooling device for causing a cooling gas to flow along the outer periphery of the discharge tube in directions parallel to the axis thereof, and a microwave power source for supplying microwave power to the coaxial waveguide. When the microwave induced plasma source is used as the light source of a spectrometer or the ion source of a mass spectrometer, a trace element can be readily determined qualitatively or quantitatively.

摘要翻译： 微波感应等离子体源包括由圆柱形外导体和内导体组成的同轴波导，该导体具有螺旋线圈的形式，沿轴向插入螺旋线圈的放电管，并具有用于引入的内管 用于引入等离子体气体以形成双管结构的样品和外管，用于使冷却气体沿着平行于其轴线的方向沿着排出管的外周流动的放电管冷却装置，以及 用于向同轴波导提供微波功率的微波电源。 当微波感应等离子体源用作光谱仪的光源或质谱仪的离子源时，微量元素可以容易地定性或定量地确定。