公开(公告)号：US09362307B2

公开(公告)日：2016-06-07

申请号：US13185931

申请日：2011-07-19

申请人： Tetsuji Yamaguchi ,  Kengo Akimoto ,  Hiroki Kayoiji ,  Toru Takayama

发明人： Tetsuji Yamaguchi ,  Kengo Akimoto ,  Hiroki Kayoiji ,  Toru Takayama

IPC分类号： H01L29/786 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L27/12 ,  H01L27/1248

摘要： An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode. Expansion or shrinkage of a glass substrate during the heat treatment can be prevented from affecting misalignment in patterning since the gate insulating film and the semiconductor film are simultaneously processed into element shapes after the heat treatment.

摘要翻译： 本发明的目的是提供一种薄膜晶体管的制造方法，其能够进行旨在提高栅极绝缘膜的特性的热处理，例如降低界面电平或降低固定电荷，而不会引起不对准的问题 由于玻璃的膨胀或收缩造成图案化。 本发明的薄膜晶体管的制造方法包括以下步骤：在不进行元件隔离的半导体膜上形成至少栅极绝缘膜的状态下进行热处理，同时隔离栅极绝缘膜和 将半导体膜形成为元件结构，形成覆盖露出的半导体膜的侧面的绝缘膜，由此防止半导体膜与栅电极之间的短路。 由于栅极绝缘膜和半导体膜在热处理后同时被加工成元件形状，所以可以防止热处理期间的玻璃基板的膨胀或收缩，从而影响图案中的未对准。

公开(公告)号：US09324874B2

公开(公告)日：2016-04-26

申请号：US12568120

申请日：2009-09-28

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Atsushi Umezaki

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Atsushi Umezaki

IPC分类号： H01L29/12 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/78606 ,  H01L29/7869

摘要： A pixel portion and a driver circuit driving the pixel portion are formed over the same substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor layer is used and a channel protective layer is provided over the oxide semiconductor layer serving as a channel formation region which is overlapped with the gate electrode. The driver circuit as well as the pixel portion is provided over the same substrate to reduce manufacturing costs.

摘要翻译： 驱动像素部的像素部和驱动电路形成在同一基板上。 使用其中使用氧化物半导体层的反交错薄膜晶体管形成驱动电路的至少一部分，并且在用作与栅电极重叠的沟道形成区域的氧化物半导体层上设置沟道保护层 。 驱动电路以及像素部分设置在相同的基板上以降低制造成本。

公开(公告)号：US08999836B2

公开(公告)日：2015-04-07

申请号：US11382420

申请日：2006-05-09

申请人： Yoshiaki Oikawa ,  Kengo Akimoto

发明人： Yoshiaki Oikawa ,  Kengo Akimoto

IPC分类号： H01L21/44 ,  H05B33/10 ,  H01L51/52

CPC分类号： H01L27/3258 ,  H01L27/3248 ,  H01L51/506 ,  H01L51/5076 ,  H01L51/5206 ,  H01L51/5215 ,  H01L51/5218 ,  H01L51/5221 ,  H01L51/5234 ,  H01L2227/323 ,  H01L2251/306 ,  H01L2251/308 ,  H05B33/10

摘要： It is an object of the present invention to provide a technique for manufacturing a highly reliable display device at low cost with high yield. A first electrode layer is formed by a sputtering method using a gas containing hydrogen or H2O, an electroluminescent layer is formed over the first electrode layer, and a second electrode layer is formed over the electroluminescent layer. According to one aspect of the present invention, a display device is manufactured to include a first electrode layer including indium zinc oxide containing silicon oxide and tungsten oxide, an electroluminescent layer over the first electrode layer, and a second electrode layer over the electroluminescent layer, where the electroluminescent layer includes a layer containing an organic compound and an inorganic compound to be in contact with the first electrode layer.

摘要翻译： 本发明的一个目的是提供一种以高成本低成本制造高度可靠的显示装置的技术。 通过使用含有氢或H 2 O的气体的溅射法形成第一电极层，在第一电极层上形成电致发光层，在电致发光层上形成第二电极层。 根据本发明的一个方面，制造显示装置包括：包含含氧化硅和氧化钨的氧化铟锌的第一电极层，第一电极层上的电致发光层，以及电致发光层上的第二电极层， 其中电致发光层包括含有有机化合物的层和与第一电极层接触的无机化合物。

公开(公告)号：US08759131B2

公开(公告)日：2014-06-24

申请号：US12693818

申请日：2010-01-26

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Junichiro Sakata ,  Yoshiharu Hirakata ,  Norihito Sone

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Junichiro Sakata ,  Yoshiharu Hirakata ,  Norihito Sone

IPC分类号： H01L21/28

CPC分类号： H01L27/3244 ,  H01L27/322 ,  H01L27/3276 ,  H01L51/5048 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/52 ,  H01L51/5206 ,  H01L51/5215 ,  H01L51/5218 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/56

摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.

摘要翻译： 提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。 这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度 形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。 根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。

公开(公告)号：US08748887B2

公开(公告)日：2014-06-10

申请号：US13613456

申请日：2012-09-13

申请人： Hideaki Kuwabara ,  Kengo Akimoto ,  Toshinari Sasaki

发明人： Hideaki Kuwabara ,  Kengo Akimoto ,  Toshinari Sasaki

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/24 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78696

摘要： An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.

摘要翻译： 目的是增加包括氧化物半导体的薄膜晶体管的场效应迁移率。 另一个目的是稳定薄膜晶体管的电特性。 在包括氧化物半导体层的薄膜晶体管中，在氧化物半导体层上形成具有比氧化物半导体更高的导电性的半导体层或导电层，由此可以提高薄膜晶体管的场效应迁移率。 此外，通过在氧化物半导体层和薄膜晶体管的保护绝缘层之间形成具有比氧化物半导体更高的导电性的半导体层或导电层，防止氧化物半导体层的组成变化或膜质量的劣化 ，使得薄膜晶体管的电特性能够稳定。

公开(公告)号：US08629069B2

公开(公告)日：2014-01-14

申请号：US12184401

申请日：2008-08-01

申请人： Kengo Akimoto ,  Tatsuya Honda ,  Norihito Sone

发明人： Kengo Akimoto ,  Tatsuya Honda ,  Norihito Sone

IPC分类号： H01L21/00

CPC分类号： H01L29/78696 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/428 ,  H01L21/465 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/045 ,  H01L29/7869

摘要： An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

摘要翻译： 本发明的目的是提供一种半导体器件，其制造工艺不复杂并且可以通过以氧化锌为代表的氧化物半导体膜形成薄膜晶体管来制造成本。 对于半导体器件，在基板上形成栅电极; 形成覆盖栅电极的栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体膜; 并且在氧化物半导体膜上形成第一导电膜和第二导电膜。 氧化物半导体膜在沟道区域中至少具有结晶化区域。

公开(公告)号：US08471252B2

公开(公告)日：2013-06-25

申请号：US12535715

申请日：2009-08-05

申请人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Kengo Akimoto ,  Kojiro Shiraishi

发明人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Kengo Akimoto ,  Kojiro Shiraishi

IPC分类号： H01L21/34 ,  H01L29/786

CPC分类号： H01L29/66742 ,  H01L29/78621 ,  H01L29/7869

摘要： An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. A metal oxide layer having higher carrier concentration than the semiconductor layer is provided intentionally as the buffer layer between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

摘要翻译： 一个实施例是包括交错（顶栅结构）薄膜晶体管，其中使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且缓冲层设置在半导体层与源极和漏极之间 层。 有意地提供具有比半导体层更高的载流子浓度的金属氧化物层作为源极和漏极电极层与半导体层之间的缓冲层，从而形成欧姆接触。

公开(公告)号：US08432505B2

公开(公告)日：2013-04-30

申请号：US13288099

申请日：2011-11-03

申请人： Kengo Akimoto ,  Noriko Miyagi ,  Shingo Eguchi

发明人： Kengo Akimoto ,  Noriko Miyagi ,  Shingo Eguchi

IPC分类号： G02F1/136

CPC分类号： H01L27/124 ,  H01L27/3244 ,  H01L51/5215

摘要： It is an object of the present invention to provide a display device that has a structure of an electrode where a residue of a transparent conductive film is not generated when a weak acid solution is used in etching, which is particularly appropriate for an electrode of a light-emitting element.A display device according to the present invention has an electrode that has a laminated structure of laminated transparent conductive films, and the electrode has a first transparent conductive film as the bottom layer, where no residue is generated when a weak acid solution is used in etching, and a second transparent conductive film as the top layer, which has a work function of 5.0 eV or more.

摘要翻译： 本发明的目的是提供一种具有电极结构的显示装置，其中当蚀刻中使用弱酸溶液时，不产生透明导电膜的残留物，这特别适用于 发光元件。 根据本发明的显示装置具有具有叠层透明导电膜的叠层结构的电极，并且电极具有作为底层的第一透明导电膜，当在蚀刻中使用弱酸溶液时不产生残留物 ，第二透明导电膜作为顶层，其功函数为5.0eV以上。

公开(公告)号：US08373164B2

公开(公告)日：2013-02-12

申请号：US12613769

申请日：2009-11-06

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Daisuke Kawae

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Daisuke Kawae

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L21/00

CPC分类号： H01L29/41733 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0508 ,  H01L51/0512 ,  H01L51/0545 ,  H01L51/105

摘要： A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

摘要翻译： 下栅极薄膜晶体管中的源电极和漏电极之间可能发生的电场浓度被放宽并且抑制了开关特性的劣化的结构及其制造方法。 制造在源电极和漏电极上设置氧化物半导体层的底栅薄膜晶体管，与氧化物半导体层接触的源电极的侧表面的角度和角度;角度和角度; 与氧化物半导体层接触的漏电极的侧面的两个面积分别被设定为大于或等于20°且小于90°，​​使得从上边缘到下边缘的距离 每个电极的侧表面增加。

公开(公告)号：US08368072B2

公开(公告)日：2013-02-05

申请号：US12183330

申请日：2008-07-31

申请人： Masahiko Hayakawa ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Kengo Akimoto

发明人： Masahiko Hayakawa ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Kengo Akimoto

IPC分类号： H01L29/04

CPC分类号： H01L33/44 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

摘要： To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.