摘要:
A main control circuit generates a plurality of main control signals of different phases to local control circuits. The local control circuits produce row-related control signals greater in number than the main control signals in accordance with these main control signals. A semiconductor memory device can be easily adapted to change in bank structure, and can perform a fast and stable operation with a low current consumption.
摘要:
Outside core circuit, link circuits are concentratedly arranged in an LT link portion. The LT link information sent from the LT link portion is serially transferred to transfer control circuit. Transfer control portion converts the serially transferred link information to parallel information, and transfers the parallel information to latch circuits arranged in the core circuit and corresponding to circuits requiring the LT link information. An influence on an interconnection layout by laser trimmable link elements is eliminated.
摘要:
An apparatus includes a communication unit for receiving image data and an external Centronics connector for inputting character code data from an external device. A facsimile MPU is provided for setting an image recording parameter based on the image data and a character recording parameter based on the character code data. A printing head is provided for recording an image based on the image data in accordance with the image recording parameter and a character based on the character code data in accordance with the character recording parameter.
摘要:
A data input/output circuit includes an S/P data conversion circuit which converts serial data input to a data terminal into a parallel data and transmits the parallel data to write data lines, a P/S data conversion circuit which converts parallel data on read data lines to serial data and outputs the serial data to the data terminal, and an input/output test circuit placed between the write data lines and the read data lines. The input/output test circuit responds to an input/output test signal to directly transfer data on the write data lines respectively to the read data lines without passing them through a memory cell array.
摘要:
An image recording apparatus comprises a FAX unit and a printer unit. The printer unit has an ink-jet printing head, and records image data received by the FAX unit or image data read by an original sheet reader in a copy mode. A sensor constituted by an actuator and a photointerrupter for detecting whether an original sheet is set is arranged in the original sheet reader. In a stand-up state of the housing of the apparatus, the actuator is removed from the photointerrupter, and this sensor is set in the same state as in the original presence state. Even if a power supply is turned on in this state, a recovery operation which is normally executed is inhibited. With this operation, contamination and occurrence of trouble caused by ink leakage can be prevented.
摘要:
In a synchronous semiconductor memory device, memory arrays (MA) forming activation units each are divided into a plurality of small memory arrays (MK). There are provided local I/O line pairs (LIO) each for two small memory arrays. The global I/O line pairs (GIO) crossing word lines are arranged in word line shunt regions (WS). The connection switches (BS) are arranged in the crossing between the local I/O line pairs and global I/O line pairs. Each small memory array in the activated memory array is connected to the corresponding global I/O line pair through the local I/O line pair. Thereby, a plurality of bits can be simultaneously read without increasing an area occupied by interconnections. The control of connection switch is made using a sense amplifier activation signal. Global I/O lines are precharged/equalized after data are transferred to read data registers provided for data output terminal for sequential data output or into selected memory cells. External clock signal is frequency-divided to produce phase-shifted internal clock signals which are used for producing internal voltage through charge operation.
摘要:
An electric field equal to at least a coercive electric field is applied to a field-excited phase transition material thereby to bring about a phase transition from an antiferroelectric phase to a ferroelectric phase for thereby causing the field-excited phase transition material to produce a distortion. Then, the electric field applied to the field-excited phase transition material is eliminated while the distortion remains in the field-excited phase transition material. Thereafter, a shock is applied to the field-excited phase transition material to forcibly remove residual distortion from the field-excited phase transition material for thereby causing the field-excited phase transition material to produce an electric signal representative of the shock. The field-excited phase transition material may comprise an electrostrictive material composed of lead, barium, niobium, zirconium, tin, titanium, and oxygen, or lead, niobium, zirconium, tin, titanium, and oxygen, or a piezoelectric/electrostrictive material.
摘要:
An Al-based intermetallic compound in which a eutectic crystal type Al-CuMn intermetallic compound dispersion phase is dispersed in an Al-Cu intermetallic compound matrix phase. The content of Mn as a eutectic crystal-forming element contained in the dispersion phase is set in a range of from 5% by weight (inclusive) to 30% by weight (inclusive). In the course of solidification of the Al-Cu-Mn intermetallic compound, an infinite number of dispersion phases are first crystallized, and the matrix phase is then crystallized. This ensures that the matrix phase is formed into a fine crystal structure due to hindrance of the growth thereof by the dispersion phase, leading to increases in hardness and toughness of the resulting Al-based intermetallic compound. In another embodiment, the Al-based intermetallic compound contains peritectic type Al-based intermetallic dispersion phase, such as formed by Ta, dispersed in the intermetallic compound matrix phase.