摘要:
A novel print controlling apparatus that facilitates providing easy services that use printer drivers. The print controlling apparatus that executes a print job on a printing apparatus, and includes an additional feature driver 130 that acquires image to be printed and print settings set by a user by working as a printer driver and generates a print data in a format with open specifications by processing the acquired image, an individual driver 150 as a printer driver that generates a print job to be sent to a printer 2 designated in the print settings, and a reprint controlling unit 140 that has the individual driver 150 generate the print job based on the generated print data.
摘要:
A printer driver includes an assigning unit that assigns a setting value based on storage location information specifying a storage location for each setting value; a compressing unit that converts each of the setting values thus assigned to have a format identifying each storage location, and generates compressed data therefrom; a storage unit that stores each piece of the compressed data compressed by the compressing unit in a storage location specified by the storage location information; a first decompressing unit and a second decompressing unit that decompress the compressed data stored in the storage location; a setting window displaying unit that displays a print setting window using each of the setting values obtained by decompression performed by the first decompressing unit; and a print data generating unit that generates print data using each of the setting values obtained by decompression performed by the second decompressing unit.
摘要:
A fabric, a fabric manufacturing method and a vehicle seat are provided. The fabric has one surface and an opposite surface, and includes a constituent yarn having at least an elastic yarn; and a chenille yarn having a core yarn and a pile yarn. At least one kind of yarn of the constituent yarn is shaped in a waveform as seen from a sectional direction of the fabric. The core yarn is located closer to the opposite surface than an imaginary line, the imaginary line being formed by connecting each of peaks of mountain portions of the waveform in the one surface.
摘要:
A semiconductor device including a buried cell array transistor and an electronic device including the same are provided. The device includes a field region in a substrate and the filed region defines an active region. A first source/drain region and a second source/drain region are in the active region. A gate trench is between the first and second source/drain regions, and in the active region and the field region. A gate structure is within the gate trench. The gate structure includes a gate electrode, an insulating gate capping pattern on the gate electrode, a gate dielectric between the gate electrode and the active region, and an insulating metal-containing material layer between the insulating gate capping pattern and the active region.
摘要:
A charged particle beam extraction method according to the present invention is featured in that, in a circular accelerator which accelerates a charged particle beam, a pulse voltage is applied to a part of the accelerated charged particle beam to generate a momentum deviation only in the part of the charged particle beam, in that the charged particles of a part of the charged particle beam, the charged particles having a large momentum deviation, are located in a non-stable region and in an extraction region in a horizontal phase space with respect to the traveling direction of the charged particle beam, and in that a group of the charged particles located in the non-stable region and in the extraction region are largely deviated in the horizontal direction so as to be extracted.
摘要:
The beam irradiation apparatus is featured by including a transport pipe which is vacuum-evacuated to be used as a transport channel of a beam taken out from an accelerator, a quadrupole magnet which modulates the beam diameter of the beam so that the beam is incident on an irradiation target existing in the atmosphere while maintaining the focusing angle of the beam, and one or more longitudinally movable range shifters which are provided to be capable of changing the distance to the irradiation target of the beam, and which modulate the beam range by reducing the energy of the beam by allowing the beam to pass through the movable range shifter, and is featured in that the beam is irradiated onto the irradiation target by modulating the beam diameter and the beam range.
摘要:
A method of fabricating a semiconductor device is disclosed, the method generally including the steps of: forming a gate dielectric layer on a semiconductor substrate;forming a gate electrode on the gate dielectric layer;forming an etch stop layer on the gate electrode;forming a capacitor on the semiconductor substrate adjacent to the gate electrode;after forming the capacitor, forming a contact hole passing through the etch stop layer on the gate electrode;and, diffusing deuterium into the gate dielectric layer through the contact hole.
摘要:
A semiconductor device includes a buried well, first and second active regions, an isolation layer, and a low resistance region. The buried well is disposed on a substrate and has impurity ions of a first conductivity type. The first and second active regions are disposed on the buried well and each have impurity ions of a second conductivity type, which is different from the first conductivity type. The isolation layer is disposed between the first and second active regions. The low resistance region is disposed between the isolation layer and the substrate and has impurity ions of the second conductivity type. The concentration of impurity ions in the low resistance region is greater than the concentration of the impurity ions in each of the first and second active regions.
摘要:
In a mounting device for disk drive, two HDDs are retained in an outer case that forms the mounting device, and an inner case with guiding grooves each including an oblique groove and a parallel groove formed thereon is provided. When the inner case is extracted, the HDD on the front side is caused to ascend in the vertical direction to a position where the HDD on the front side does not obstruct the extraction of the HDD on the back side.
摘要:
A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, a first node impurity region, a second node impurity region, a third node impurity region, and an insulating layer. The first through third node impurity regions are disposed in the semiconductor substrate. Each of the first through third node impurity regions has a longitudinal length, a transverse length and a thickness respectively corresponding to first through third directions, which are perpendicular with respect to each other. The first node impurity region is parallel to the second and third node impurity regions, which are disposed in the substantially same line. The insulating layer is located between the first through third node impurity regions in the semiconductor substrate.