公开(公告)号：US08969130B2

公开(公告)日：2015-03-03

申请号：US13675140

申请日：2012-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Erika Takahashi ,  Yuki Imoto ,  Yuhei Sato

IPC: H01L21/00 ,  H01L29/786 ,  H01L21/36 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02266 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  Y10T428/24628

Abstract: An amorphous region with low density is formed in an oxide insulating film containing zirconium. The amount of oxygen released from such an oxide insulating film containing zirconium by heating is large and a temperature at which oxygen is released is higher in the oxide insulating film than in a conventional oxide film (e.g., a silicon oxide film). When the insulating film is formed using a sputtering target containing zirconium in an oxygen atmosphere, the temperature of a surface on which the insulating film is formed may be controlled to be lower than a temperature at which a film to be formed starts to crystallize.

Abstract translation: 在含锆的氧化物绝缘膜中形成低密度的非晶区域。 通过加热从含氧锆的氧化物绝缘膜释放出的氧量比氧化物绝缘膜（例如，氧化硅膜）的氧化物绝缘膜的释放温度高。 当在氧气氛中使用含有锆的溅射靶形成绝缘膜时，可以将形成有绝缘膜的表面的温度控制为低于待形成的膜开始结晶的温度。

公开(公告)号：US08772771B2

公开(公告)日：2014-07-08

申请号：US13870370

申请日：2013-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka

IPC: H01L29/10 ,  H01L29/12 ,  H01L21/00 ,  H01L21/16

CPC classification number: H01L29/66742 ,  H01L27/1225 ,  H01L29/78642 ,  H01L29/7869

Abstract: Miniaturized transistors having high and stable electric characteristics using high precision microfabrication are provided with high yield. Further, high performance, high reliability, and high productivity also of a semiconductor device including the transistor are achieved. A semiconductor device includes a vertical transistor in which a first electrode layer, a first oxide film containing indium, gallium, zinc, and nitrogen as main components, an oxide semiconductor film containing indium, gallium, and zinc as main components, a second oxide film containing indium, gallium, zinc, and nitrogen as main components, and a second electrode layer are stacked in this order, and a first gate insulating film and a first gate electrode layer are provided at one side of the columnar oxide semiconductor film and a second gate insulating film and a second gate electrode layer are provided at the other side of the columnar oxide semiconductor film.

Abstract translation: 具有高精度微细加工的高稳定电特性的小型化晶体管以高产率被提供。 此外，实现了包括晶体管的半导体器件的高性能，高可靠性和高生产率。 半导体器件包括垂直晶体管，其中第一电极层，包含铟，镓，锌和氮作为主要成分的第一氧化物膜，以铟，镓和锌为主要成分的氧化物半导体膜，第二氧化物膜 含有铟，镓，锌和氮作为主要成分，第二电极层依次层叠，第一栅极绝缘膜和第一栅电极层设置在柱状氧化物半导体膜的一侧， 栅极绝缘膜和第二栅电极层设置在柱状氧化物半导体膜的另一侧。

公开(公告)号：US11705522B2

公开(公告)日：2023-07-18

申请号：US17358295

申请日：2021-06-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Hirokazu Watanabe ,  Yuhei Sato ,  Yasumasa Yamane ,  Daisuke Matsubayashi

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/66

CPC classification number: H01L29/78618 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

公开(公告)号：US11217668B2

公开(公告)日：2022-01-04

申请号：US16736862

申请日：2020-01-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tetsuhiro Tanaka ,  Kazuki Tanemura ,  Daisuke Matsubayashi

IPC: H01L29/786 ,  H01L29/40 ,  H01L49/02 ,  H01L27/12 ,  H01L23/522 ,  H01L27/06 ,  H01L21/8258

Abstract: A miniaturized transistor with reduced parasitic capacitance and highly stable electrical characteristics is provided. High performance and high reliability of a semiconductor device including the transistor is achieved. A first conductor is formed over a substrate, a first insulator is formed over the first conductor, a layer that retains fixed charges is formed over the first insulator, a second insulator is formed over the layer that retains fixed charges, and a transistor is formed over the second insulator. Threshold voltage Vth is controlled by appropriate adjustment of the thicknesses of the first insulator, the second insulator, and the layer that retains fixed charges.

公开(公告)号：US10950734B2

公开(公告)日：2021-03-16

申请号：US16248903

申请日：2019-01-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Sachiaki Tezuka ,  Tetsuhiro Tanaka ,  Toshiya Endo ,  Mitsuhiro Ichijo

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/78 ,  H01L27/06 ,  H01L27/108 ,  H01L27/1156 ,  H01L21/8258

Abstract: A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.

公开(公告)号：US10217870B2

公开(公告)日：2019-02-26

申请号：US14926737

申请日：2015-10-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Sachiaki Tezuka ,  Hideomi Suzawa ,  Akihisa Shimomura ,  Tetsuhiro Tanaka

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided. Oxygen is supplied from a base insulating layer provided below an oxide semiconductor layer to a channel formation region, whereby oxygen vacancies which might be generated in the channel formation region are filled. Further, a protective insulating layer containing a small amount of hydrogen and functioning as a barrier layer having a low permeability to oxygen is formed over the gate electrode layer so as to cover side surfaces of an oxide layer and a gate insulating layer that are provided over the oxide semiconductor layer, whereby release of oxygen from the gate insulating layer and/or the oxide layer is prevented and generation of oxygen vacancies in a channel formation region is prevented.

公开(公告)号：US10141337B2

公开(公告)日：2018-11-27

申请号：US15723227

申请日：2017-10-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Yoshinori Ieda ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Kenichi Okazaki ,  Mitsuhiro Ichijo ,  Toshiya Endo

IPC: H01L27/12 ,  H01L27/06 ,  H01L27/088

Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

公开(公告)号：US10056497B2

公开(公告)日：2018-08-21

申请号：US15092956

申请日：2016-04-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Mitsuhiro Ichijo ,  Toshiya Endo ,  Akihisa Shimomura ,  Yuji Egi ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC: H01L29/423 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78648

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

公开(公告)号：US10050132B2

公开(公告)日：2018-08-14

申请号：US15664106

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Tetsuhiro Tanaka ,  Masashi Tsubuku ,  Toshihiko Takeuchi ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Satoshi Toriumi ,  Takashi Ohtsuki ,  Toshiya Endo

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. One feature resides in forming an oxide semiconductor film over an oxygen-introduced insulating film, and then forming the source and drain electrodes with an antioxidant film thereunder. Here, in the antioxidant film, the width of a region overlapping with the source and drain electrodes is longer than the width of a region not overlapping with them. The transistor formed as such has less defects in the channel region, which will improve reliability of the semiconductor device.

公开(公告)号：US10032888B2

公开(公告)日：2018-07-24

申请号：US14829029

申请日：2015-08-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Yasumasa Yamane ,  Akihisa Shimomura ,  Naoki Okuno

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/423 ,  H01L29/786 ,  H01L29/45 ,  H01L29/49

Abstract: To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.