公开(公告)号：US11959165B2

公开(公告)日：2024-04-16

申请号：US17228847

申请日：2021-04-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC: C23C14/34 ,  B28B11/24 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: C23C14/3414 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  C23C14/086 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US11066739B2

公开(公告)日：2021-07-20

申请号：US16285297

申请日：2019-02-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  C23C14/34 ,  B28B11/24 ,  C04B35/64 ,  C04B35/453 ,  C23C14/08

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US09397225B2

公开(公告)日：2016-07-19

申请号：US14602878

申请日：2015-01-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki Imoto ,  Tetsunori Maruyama ,  Yuta Endo

IPC: H01L21/44 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen (a hydrogen permeable film), hydrogen is transferred from the oxide semiconductor film to the hydrogen capture film through the hydrogen permeable film by heat treatment. Specifically, a base film or a protective film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.

公开(公告)号：US12252775B2

公开(公告)日：2025-03-18

申请号：US18633854

申请日：2024-04-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC: C23C14/34 ,  B28B11/24 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US11545579B2

公开(公告)日：2023-01-03

申请号：US17066604

申请日：2020-10-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24

Abstract: Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms/cm3 or less is provided.

公开(公告)号：US09941310B2

公开(公告)日：2018-04-10

申请号：US15285661

申请日：2016-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

IPC: H01L27/12 ,  H01L29/786 ,  H01L49/02 ,  H01L29/24

CPC classification number: H01L27/1255 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/127 ,  H01L28/20 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

Abstract: The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

公开(公告)号：US08716061B2

公开(公告)日：2014-05-06

申请号：US13718051

申请日：2012-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

IPC: H01L21/16

CPC classification number: H01L29/66742 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.

Abstract translation: 在使用氧化物半导体的薄膜晶体管中，在氧化物半导体层和源极和漏极电极层之间设置包含铟，镓，锌，氧和氮的缓冲层。

公开(公告)号：US08597977B2

公开(公告)日：2013-12-03

申请号：US13718051

申请日：2012-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

IPC: H01L21/16

Abstract: In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.

公开(公告)号：US09673306B2

公开(公告)日：2017-06-06

申请号：US14583416

申请日：2014-12-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki Imoto ,  Yuhei Sato

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/51 ,  H01L29/786

Abstract: The amount of water and hydrogen contained in an oxide semiconductor film is reduced, and oxygen is supplied sufficiently from a base film to the oxide semiconductor film in order to reduce oxygen deficiencies. A stacked base film is formed, a first heat treatment is performed, an oxide semiconductor film is formed over and in contact with the stacked base film, and a second heat treatment is performed. In the stacked base film, a first base film and a second base film are stacked in this order. The first base film is an insulating oxide film from which oxygen is released by heating. The second base film is an insulating metal oxide film. An oxygen diffusion coefficient of the second base film is smaller than that of the first base film.

公开(公告)号：US10889888B2

公开(公告)日：2021-01-12

申请号：US15189104

申请日：2016-06-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC: C23C14/08 ,  C23C14/34 ,  C23C14/54 ,  C04B35/01 ,  C04B35/453 ,  C04B35/64 ,  B28B11/24 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.