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    MEMORY ELEMENT AND MEMORY APPARATUS
    81.
    发明申请
    MEMORY ELEMENT AND MEMORY APPARATUS 有权
    记忆元素和记忆装置

    公开(公告)号：US20130134532A1

    公开(公告)日：2013-05-30

    申请号：US13675789

    申请日：2012-11-13

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: H01L29/82

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

    Abstract: A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.

    Abstract translation: 存储元件包括分层结构：具有根据信息改变的磁化方向的存储层，通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储层中，该信息包括第一铁磁 层，其具有从垂直于膜面的方向倾斜的磁化方向，层压在所述第一铁磁层上的接合层和层压在所述接合层上并通过所述接合层接合到所述第一铁磁性层的第二铁磁层， 从垂直于膜面的方向倾斜的磁化方向，具有固定的磁化方向的磁化固定层，设置在存储层和磁化固定层之间的中间层，并与第一铁磁体 层和与第二铁磁体接触的盖层 c层。

    STORAGE ELEMENT AND MEMORY
    83.
    发明申请
    STORAGE ELEMENT AND MEMORY 有权

    公开(公告)号：US20220238797A1

    公开(公告)日：2022-07-28

    申请号：US17717362

    申请日：2022-04-11

    Applicant: SONY CORPORATION

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

    Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

    Memory element and memory device
    85.
    发明授权
    Memory element and memory device 有权

    公开(公告)号：US10937955B2

    公开(公告)日：2021-03-02

    申请号：US16853157

    申请日：2020-04-20

    Applicant: Sony Corporation

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida ,  Tetsuya Asayama

    IPC: H01L43/10 ,  G11C11/16 ,  H01L43/08 ,  H01L43/02

    Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.

    Storage element and storage apparatus
    86.
    发明授权
    Storage element and storage apparatus 有权

    公开(公告)号：US10580471B2

    公开(公告)日：2020-03-03

    申请号：US16408840

    申请日：2019-05-10

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: G11C11/16 ,  H01F10/32 ,  G11C11/155 ,  H01L43/08 ,  H01L27/22 ,  G11B5/39 ,  H01L43/02 ,  G11C11/15

    Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

    Memory element and memory device
    88.
    发明授权
    Memory element and memory device 有权

    公开(公告)号：US10374146B2

    公开(公告)日：2019-08-06

    申请号：US15646544

    申请日：2017-07-11

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and in regard to the insulating layer and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film.

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