摘要:
A protective film structure of a metal member for use in an apparatus for manufacturing a semiconductor or the like, the protective film structure including a first coating layer of faultless aluminum oxide formed by direct anodic oxidation of a base-material metal of an aluminum alloy; and a second coating layer formed on the first coating layer and made of yttrium oxide by a plasma spraying method.
摘要:
The present invention realizes an efficient superscalar instruction issue and low power consumption at an instruction set including instructions with prefixes. An instruction fetch unit is adopted which determines whether an instruction code is of a prefix code or an instruction code other than it, and outputs the result of determination and the 16-bit instruction code. Along with it, decoders each of which decodes the instruction code, based on the result of determination, and decoders each of which decodes the prefix code, are disposed separately. Further, a prefix is supplied to each decoder prior to a fixed-length instruction code like 16 bits modified with it. A fixed-length instruction code following the prefix code is supplied to each decoder of the same pipeline as the decoder for the prefix code.
摘要:
A liquid crystal display including two alignment substrates, each having, in this order, a substrate, an electrode layer and an alignment layer, with a ferroelectric liquid crystal interposed therebetween. At least one of the two alignment layers is a columnar alignment layer having a column structure with plate-like molecules laminated with the normal directions of the plate-like molecules aligned in a certain direction of the substrate.
摘要:
A coreless and brushless direct-current motor includes an armature coil wound without core and formed in the shape of a saddle; an outside rotor magnet formed by a permanent magnet, the outside rotor magnet being provided at an outside of the armature coil in the shape of a cylinder so as to face the armature coil, the outside rotor magnet being rotated by the magnetic field; an inside rotor magnet formed by a permanent magnet, the inside rotor magnet being provided in the shape of a cylinder at an inside of the armature coil so that the inside rotor magnet has a pole opposite to the outside rotor magnet and a rotational shaft is independently provided; an output shaft connected to the inside rotor magnet; and a sealing part of a barrier structure which sealing part partitions the armature coil and the outside rotor magnet to an outside of the inside rotor magnet and seals the armature coil and the outside rotor magnet.
摘要:
The present invention relates to a process for producing crystalline trans-N-[1-(2-fluorophenyl)-S-pyrazoly]-3-ox-ospiro[6-azaisobenzofuran-1(3H),1′-cyclohexane]-4′-carboxamide and novel salts, hydrates and polymorphs thereof.
摘要:
Multifunction production equipment enabling a plurality of processes in which deposition of reaction products on the inner wall of the processing chamber of equipment for producing a semiconductor or a flat-plate display, metal contamination due to corrosion of the inner wall, or the like, and fluctuation of the process due to discharged gas are suppressed, and a protective film structure for use therein. On the surface of a metal material, a first coating layer having an oxide coating of 1μ thick or less formed as an underlying layer by direct oxidation of a parent material, and a second coating layer of about 200 μm thick are formed. With such an arrangement, corrosion resistance against irradiation with ions or radicals can be imparted to a second layer protective film, and the effect of a protective layer for preventing corrosion of the surface of parent metal caused by diffusing molecules or ions into the second layer protective film can be imparted to the first layer oxide film. Consequently, contamination of the substrate with metals generated from each metal member and the inner surface of the process chamber is reduced, and stripping of the second layer protective film due to lowering in adhesion of the second layer protective film due to corrosion of the interface between the parent material and the second layer protective film can be suppressed.
摘要:
The present invention relates to a process for producing crystalline trans-N-[1-(2-fluorophenyl)-S-pyrazoly]-3-ox-ospiro[6-azaisobenzofuran-1(3H),1′-cyclohexane]-4′-carboxamide and novel salts, hydrates and polymorphs thereof.
摘要:
A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.
摘要翻译:适用于主要由铝组成的金属保护金属氧化物膜。 金属氧化物膜包括厚度为10nm以上的主要由铝构成的金属的氧化物的膜,并且具有1E18mol / cm 2以下的膜的水分释放率。 此外,提供了一种制造金属氧化物膜的方法,其中主要由铝组成的金属在pH值为4至10的化学溶液中进行阳极氧化,以获得金属氧化物膜。
摘要:
An etching liquid contains iodine, an iodine compound and alcohol as solute, and solvent such as water. The etching liquid etches a gold or gold alloy layer formed on the surface of a substrate for a semiconductor device or a liquid crystal device evenly. A plurality of gold or gold alloy columns is formed on the layer. The columns are etched scarcely by the etching liquid. The etching liquid etches the gold or gold alloy layer existing between the columns evenly. The etching liquid may further contain a surfactant.
摘要:
A semiconductor data processor has a first memory(6) constituting a cache memory, a second memory(20) capable of being a cacheable area or a non-cacheable area by the first memory, and a read buffer(12) capable of carrying out an operation for outputting data corresponding to a read access when the second memory is read accessed as the non-cacheable area. The designation of the cacheable area and the non-cacheable area for the second memory is determined by the designation of a cacheable area or a non-cacheable area for a memory space to which the second memory is mapped. The designation may be carried out in the operation mode of the data processor or by setting a control register, for example.