公开(公告)号：US20080159696A1

公开(公告)日：2008-07-03

申请号：US11964749

申请日：2007-12-27

申请人： Kanako Suzuki ,  Yoshihisa Kato ,  Noribumi Shiina ,  Kazumasa Ohsono ,  Tomoyuki Nisio

发明人： Kanako Suzuki ,  Yoshihisa Kato ,  Noribumi Shiina ,  Kazumasa Ohsono ,  Tomoyuki Nisio

IPC分类号： G02B6/38

CPC分类号： G02B6/3846 ,  G02B6/255 ,  G02B6/382

摘要： An optical connector according to the present invention comprises a ferrule and a V-groove board connected to the ferrule, wherein a first optical fiber and a second optical fiber being butt jointed in a V-groove formed in the V-groove board so as to be interconnected; the second optical fiber is connected to the first optical fiber through a refractive index matching material of cross-link curing type applied to an end surface on the V-groove board side of the first optical fiber; and spaces are provided in the V-groove so as to relax stress loaded on the refractive index matching material of cross-link curing type.

摘要翻译： 根据本发明的光连接器包括一个套圈和一个连接到套圈的V形槽板，其中第一光纤和第二光纤被对接在形成在V形槽板中的V形槽中，以便 互相联系 所述第二光纤通过施加到所述第一光纤的V槽板侧的端面的交联固化型的折射率匹配材料连接到所述第一光纤; 并且在V形槽中设置空间，以缓和负载在交联固化型折射率匹配材料上的应力。

公开(公告)号：US20070196055A1

公开(公告)日：2007-08-23

申请号：US11637743

申请日：2006-12-13

申请人： Yoshihisa Kato ,  Kanako Suzuki ,  Noribumi Shiina ,  Tomoyuki Nisio ,  Kazumasa Ohsono ,  Yoshikazu Namekawa ,  Yoshihiro Nakatani

发明人： Yoshihisa Kato ,  Kanako Suzuki ,  Noribumi Shiina ,  Tomoyuki Nisio ,  Kazumasa Ohsono ,  Yoshikazu Namekawa ,  Yoshihiro Nakatani

IPC分类号： G02B6/36

CPC分类号： G02B6/3846 ,  G02B6/02333 ,  G02B6/382 ,  G02B6/3838

摘要： An optical connector having: a ferrule into which a first optical fiber is inserted; an optical fiber connector disposed at an back end of the ferrule; and a cross-linkable refractive index matching member attached onto an end face on a back end side of the first optical fiber. The end face on the back end side of the first optical fiber and an end face of a second optical fiber to be inserted into the optical fiber connector from a back end side thereof are to be connected by a butting connection. The cross-linkable refractive index matching member is formed such that a cross-linkable refractive index matching agent is coated on the end face on the back end side of the first optical fiber, and the coated agent is cross-linked and hardened.

摘要翻译： 一种光连接器，具有：插入第一光纤的套圈; 设置在所述套圈的后端的光纤连接器; 以及附接到第一光纤的后端侧的端面上的可交联折射率匹配构件。 第一光纤的后端侧的端面和从其后端侧插入到光纤连接器的第二光纤的端面通过对接连接来连接。 可交联折射率匹配构件形成为使得可交联折射率匹配剂涂覆在第一光纤的后端侧的端面上，并且涂覆剂交联并硬化。

公开(公告)号：US20070063238A1

公开(公告)日：2007-03-22

申请号：US11520011

申请日：2006-09-13

申请人： Kazuhiro Kaibara ,  Shinzo Koyama ,  Yoshihisa Kato

发明人： Kazuhiro Kaibara ,  Shinzo Koyama ,  Yoshihisa Kato

IPC分类号： H01L29/94

CPC分类号： H01L27/11502 ,  H01L21/28291 ,  H01L29/78391

摘要： A semiconductor memory includes a conducting film formed on a substrate; a ferroelectric film formed above or below the conducting film; a source electrode and a drain electrode disposed in positions opposing the conducting film with the ferroelectric film sandwiched therebetween and spaced from each other; and an insulating film formed between the source electrode and the drain electrode.

摘要翻译： 半导体存储器包括形成在基板上的导电膜; 形成在导电膜上方或下方的铁电膜; 源电极和漏电极，设置在与导电膜相对的位置，铁电体膜夹在它们之间并彼此间隔开; 以及形成在源电极和漏电极之间的绝缘膜。

公开(公告)号：US20070061507A1

公开(公告)日：2007-03-15

申请号：US11519221

申请日：2006-09-12

申请人： Shunichi Iwanari ,  Yasushi Gohou ,  Yoshihisa Kato

发明人： Shunichi Iwanari ,  Yasushi Gohou ,  Yoshihisa Kato

IPC分类号： G06F13/00 ,  G06F12/08 ,  G06F12/00

CPC分类号： G06F12/123 ,  G06F2212/2022

摘要： A semiconductor storage apparatus comprising: a ferroelectric memory; an SRAM 30; a counter 41; a CAM 10 that judges whether or not a block of data requested to be read out from the ferroelectric memory is stored in the SRAM 30; a storage control unit 51 that, if a result of the judgment is negative, performs a control to read out the requested block of data from the ferroelectric memory and stores a copy of the read-out block of data into a unit storage area in the SRAM 30 that corresponds to the count value indicated by the counter 41; and a counter control unit 52 that causes the counter 41 to update the count value each time a result of the judgment is negative.

摘要翻译： 一种半导体存储装置，包括：铁电存储器; 一个SRAM 30; 柜台41 判断从铁电存储器请求读出的数据块是否存储在SRAM30中的CAM10; 存储控制单元51，如果判断结果为否定，则执行控制以从强电介质存储器读出所请求的数据块，并将读出的数据块的副本存储在该单元存储区域中 对应于由计数器41指示的计数值的SRAM 30; 以及计数器控制单元52，每当判断结果为负时，使计数器41更新计数值。

公开(公告)号：US06753560B2

公开(公告)日：2004-06-22

申请号：US09891214

申请日：2001-06-26

申请人： Yoshihisa Kato ,  Yasuhiro Shimada

发明人： Yoshihisa Kato ,  Yasuhiro Shimada

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L28/55

摘要： A semiconductor memory of this invention is composed of an MFMIS transistor including a first field effect transistor and a ferroelectric capacitor formed on or above the first field effect transistor with a gate electrode of the first field effect transistor working as or being electrically connected to a lower electrode of the ferroelectric capacitor, an upper electrode of the ferroelectric capacitor working as a control gate and the first field effect transistor having a first well region; and a second field effect transistor having a second well region that is isolated from the first well region of the first field effect transistor. The first well region of the first field effect transistor is electrically connected to the source region of the second field effect transistor, and the gate electrode of the first field effect transistor is electrically connected to the drain region of the second field effect transistor.

摘要翻译： 本发明的半导体存储器由包括形成在第一场效应晶体管上或第一场效应晶体管上的第一场效应晶体管和铁电电容器的MFMIS晶体管组成，其中第一场效应晶体管的栅电极用作或与下电 铁电电容器的电极，作为控制栅极的铁电电容器的上电极和具有第一阱区的第一场效应晶体管; 以及具有与第一场效应晶体管的第一阱区隔离的第二阱区的第二场效应晶体管。 第一场效应晶体管的第一阱区电连接到第二场效应晶体管的源极区域，第一场效应晶体管的栅极电连接到第二场效应晶体管的漏极区域。

公开(公告)号：US06579628B2

公开(公告)日：2003-06-17

申请号：US09877085

申请日：2001-06-11

申请人： Yuko Takeuchi ,  Yoshihisa Kato ,  Noriyoshi Yokota ,  Seiya Asari ,  Masaki Tsuchiya ,  Takao Shimizu ,  Isao Tanaka

发明人： Yuko Takeuchi ,  Yoshihisa Kato ,  Noriyoshi Yokota ,  Seiya Asari ,  Masaki Tsuchiya ,  Takao Shimizu ,  Isao Tanaka

IPC分类号： F16L902

CPC分类号： F28F19/06 ,  B23K35/304 ,  B23K35/32 ,  C10G9/16 ,  C10G9/203 ,  F28D2021/0059 ,  Y10T428/12493 ,  Y10T428/12854 ,  Y10T428/12937

摘要： The multi-layered heat resistant metal tube is disclosed. This tube has excellent anti-coking characteristics and is suitable for use under the conditions where carbon tends to deposit and accumulate thereon due to contacting with hydrocarbons at a high temperature. The tube is made by forming weld-mounted overlaid layer of Cr—Ni alloy by building-up welding over the inner surface and/or the outer surface of a substrate tube made of a heat resistant metal. The Cr—Ni alloy comprises 35% by weight or more of Cr and satisfies the relationship: Ni(w%)≧0.5Cr(wt %). Building-up welding is preferably carried out by PPW (Plasma Powder Welding) in which the filler metal is supplied in the form of powder.

公开(公告)号：US06449185B2

公开(公告)日：2002-09-10

申请号：US09886995

申请日：2001-06-25

申请人： Yoshihisa Kato ,  Yasuhiro Shimada

发明人： Yoshihisa Kato ,  Yasuhiro Shimada

IPC分类号： G11C1122

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11585 ,  H01L27/1159

摘要： A semiconductor memory includes a storing transistor for storing data, wherein the storing transistor includes an MFS transistor, an MFIS transistor, or an MFMIS transistor, and a selecting transistor for selecting the storing transistor. The storing transistor is a first field effect transistor having a first well region. The selecting transistor is second field effect transistor having a second well region that is isolated from the first well region of the first field effect transistor. The semiconductor memory further includes a first voltage supply line for supplying a DC voltage to the first well region of the first field effect transistor, and a second voltage supply line, independent of the first voltage supply line, for supplying a DC voltage to the second well region of the second field effect transistor.

摘要翻译： 半导体存储器包括用于存储数据的存储晶体管，其中存储晶体管包括MFS晶体管，MFIS晶体管或MFMIS晶体管，以及用于选择存储晶体管的选择晶体管。 存储晶体管是具有第一阱区的第一场效应晶体管。 选择晶体管是具有与第一场效应晶体管的第一阱区隔离的第二阱区的第二场效应晶体管。 半导体存储器还包括用于向第一场效应晶体管的第一阱区域提供DC电压的第一电压供应线和独立于第一电压供应线的第二电压供应线，用于向第二场效应晶体管提供DC电压 第二场效应晶体管的阱区。

公开(公告)号：US06421268B2

公开(公告)日：2002-07-16

申请号：US09899839

申请日：2001-07-09

申请人： Yoshihisa Kato ,  Yasuhiro Shimada

发明人： Yoshihisa Kato ,  Yasuhiro Shimada

IPC分类号： G11C1122

CPC分类号： G11C11/22

摘要： A multi-valued data is written in a ferroelectric capacitor, which stores a multi-valued data in accordance with displacement of polarization of a ferroelectric film thereof, by applying a relatively high first writing voltage or a relatively low second writing voltage between a first electrode and a second electrode of the ferroelectric capacitor. Next, a potential difference induced between the first and second electrodes is removed. Then, the multi-valued data is read by detecting the displacement of the polarization of the ferroelectric film by applying a reading voltage between the second electrode and a substrate where a reading FET for detecting the displacement of the polarization of the ferroelectric film is formed. The reading voltage has the same polarity as the first writing voltage and is set to such magnitude that, in applying the reading voltage, a first potential difference induced between the gate electrode of the reading FET and the substrate when the multi-valued data is written by applying the first writing voltage is smaller than a second potential difference induced between the gate electrode and the substrate when the multi-valued data is written by applying the second writing voltage.

摘要翻译： 多值数据被写入铁电电容器中，该铁电电容器通过在第一电极之间施加相对较高的第一写入电压或相对较低的第二写入电压来存储根据其铁电体膜的极化位移的多值数据 和铁电电容器的第二电极。 接下来，去除在第一和第二电极之间引起的电位差。 然后，通过在第二电极和衬底之间施加读取电压来检测强电介质膜的偏振的位移来读取多值数据，其中形成用于检测强电介质膜的偏振位移的读取FET。 读取电压具有与第一写入电压相同的极性，并且被设置为使得在施加读取电压时，当写入多值数据时，在读取FET的栅电极和衬底之间感应的第一电位差 通过施加第一写入电压小于通过施加第二写入电压来写入多值数据时在栅电极和衬底之间感应的第二电位差。

公开(公告)号：US6055883A

公开(公告)日：2000-05-02

申请号：US845480

申请日：1997-04-25

申请人： Yoshihisa Kato

发明人： Yoshihisa Kato

IPC分类号： B60R21/09 ,  B60T7/06 ,  B62D25/08 ,  G05G1/32 ,  G05G1/14

CPC分类号： G05G1/32 ,  B60R21/09 ,  B60T7/065 ,  Y10T74/20528 ,  Y10T74/20888

摘要： A supporting structure of a pedal device for a vehicle, comprising: a pedal bracket fixed to a vehicle body so as to support a rotating shaft portion of a suspended type pedal device for a vehicle; and a displacement controlling device coupled to a rear end portion of the pedal bracket so as to control the displacement of a stepping surface of the pedal device for a vehicle as a result of displacement of the displacement controlling device substantially in a downward direction of the vehicle by an external force of a predetermined value or greater which is applied to a front portion of the vehicle.

摘要翻译： 一种用于车辆的踏板装置的支撑结构，包括：固定到车体的踏板支架，以支撑用于车辆的悬挂式踏板装置的旋转轴部; 以及位移控制装置，其联接到所述踏板支架的后端部分，以便控制由于所述位移控制装置基本上在所述车辆的向下方向上的位移而导致的用于车辆的所述踏板装置的踏板面的位移 通过施加到车辆的前部的预定值以上的外力。

公开(公告)号：US5615406A

公开(公告)日：1997-03-25

申请号：US313795

申请日：1994-09-28

申请人： Kyoichi Sasaki ,  Yoshihisa Kato

发明人： Kyoichi Sasaki ,  Yoshihisa Kato

IPC分类号： C22C1/05 ,  B23K35/02 ,  B23K35/30 ,  B23K35/32 ,  C22C29/06 ,  C22C32/00 ,  C23C24/10 ,  C23C26/02 ,  B22F3/105 ,  B22F3/15

CPC分类号： B23K35/0255 ,  B23K35/327 ,  C23C24/103 ,  C23C26/02 ,  B23K35/304 ,  B23K35/3046 ,  B23K35/3093 ,  Y10T428/12931 ,  Y10T428/12937 ,  Y10T428/12944 ,  Y10T428/12951 ,  Y10T428/12958

摘要： A process for preparing an alloy having excellent corrosion resistance and abrasion resistance is provided. The alloy is prepared by providing a powder mixture or VC-powder-containing wire having a matrix metal, including a VC powder having a particle diameter of 10 .mu.m or less, and at least one member selected from the group consisting of an Fe-base alloy, a Co-base alloy and a Ni-base alloy. The powder mixture or VC-powder-containing wire is melted with a heat source having a high energy density. The resultant melt is then cooled to homogeneously crystallize and/or precipitate VC, such that the particle diameter of the VC is reduced to 5 .mu.m or less in the matrix metal phase. Also disclosed is a process for preparing a surface-modified metallic member from a metallic member and an alloy prepared from the aforementioned process.

摘要翻译： 提供了具有优异的耐腐蚀性和耐磨性的合金的制备方法。 该合金通过提供具有基质金属的粉末混合物或含VC粉的线，包括粒径为10μm或更小的VC粉末和至少一种选自Fe- 基底合金，钴基合金和Ni基合金。 粉末混合物或含VC粉末的线材用能量密度高的热源熔化。 然后将所得熔体冷却以使VC均匀结晶和/或沉淀，使得在基体金属相中VC的粒径降低至5μm以下。 还公开了一种由金属构件制备表面改性金属构件的方法和由上述方法制备的合金。