利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

121 条记录 (耗时 0.025 秒)

    Alloy having excellent corrosion resistance and abrasion resistance, method for producing the same and material for use in production of the same
    1.
    发明授权
    Alloy having excellent corrosion resistance and abrasion resistance, method for producing the same and material for use in production of the same 失效
    具有优异的耐腐蚀性和耐磨性的合金，其制造方法及其制造方法

    公开(公告)号：US5835842A

    公开(公告)日：1998-11-10

    申请号：US762838

    申请日：1996-12-10

    申请人： Kyoichi Sasaki ,  Yoshihisa Kato

    发明人： Kyoichi Sasaki ,  Yoshihisa Kato

    IPC分类号： B23K35/02 ,  B23K35/32 ,  C23C26/02 ,  B22F1/00

    CPC分类号： C23C26/02 ,  B23K35/0255 ,  B23K35/327 ,  Y10T428/12056 ,  Y10T428/12139 ,  Y10T428/12146

    摘要： A material for use in the production of an alloy having excellent corrosion resistance and abrasion resistance is provided. The material includes a cored wire formed from at least a pipe of matrix metal, which is at least one member selected from an Fe-base alloy, a Co-base alloy, and a Ni-base alloy. A VC powder having a particle diameter of 10 .mu.m or less is filled into the pipe. Also provided is a material for use in the production of an alloy having excellent corrosion resistance and abrasion resistance. The material includes a powder mixture containing at least a matrix metal, which is at least one member selected from an Fe-base alloy, a Co-based alloy and a Ni-base alloy, and a VC powder having a particle diameter of 10 .mu.m or less.

    摘要翻译： 提供了用于生产具有优异的耐腐蚀性和耐磨性的合金的材料。 该材料包括由至少一种选自Fe基合金，Co基合金和Ni基合金中的至少一种基体金属管形成的芯线。 将具有10μm以下的粒径的VC粉末填充到管内。 还提供了用于生产具有优异的耐腐蚀性和耐磨性的合金的材料。 所述材料包括至少含有基质金属的粉末混合物，所述基质金属是选自Fe基合金，Co基合金和Ni基合金中的至少一种，以及直径为10μm的VC粉末 m以下。

    IMAGE-CAPTURING DEVICE
    4.
    发明申请
    IMAGE-CAPTURING DEVICE 审中-公开
    图像捕获设备

    公开(公告)号：US20130002882A1

    公开(公告)日：2013-01-03

    申请号：US13611586

    申请日：2012-09-12

    申请人： Kazutoshi ONOZAWA ,  Yoshihisa Kato ,  Shinzou Kouyama

    发明人： Kazutoshi ONOZAWA ,  Yoshihisa Kato ,  Shinzou Kouyama

    IPC分类号： H04N5/335 ,  H04N5/33

    CPC分类号： H04N5/2354 ,  G01S7/4863 ,  G01S17/87 ,  G01S17/89 ,  H04N5/2353 ,  H04N5/332 ,  H04N9/045 ,  H04N2209/045

    摘要： The image-capturing device according to the present invention includes a solid-state imaging element, an infrared LED which emits infrared light, a light-emission controlling unit which causes the infrared LED to emit infrared pulsed light on a per frame time basis, and a signal processing unit which extracts, from the solid-state imaging element, a color visible-light image signal in synchronization with a non-emitting period and an infrared image signal in synchronization with an emitting period of the infrared LED. The solid-state imaging element includes an image-capturing region in which unit-arrays are two-dimensionally arranged, and each of the unit-arrays has a pixel for receiving green visible light and infrared light, a pixel for receiving red visible light and infrared light, a pixel for receiving blue visible light and infrared light, and a pixel for receiving infrared light.

    摘要翻译： 根据本发明的图像捕获装置包括：固态成像元件，发射红外光的红外LED;发射控制单元，其使得红外线LED在每帧时间基础上发射红外脉冲光;以及 信号处理单元，其与红外LED的发光周期同步地从固态成像元件提取与非发光周期同步的彩色可见光图像信号和红外图像信号。 固态成像元件包括其中单元阵列被二维布置的图像捕获区域，并且每个单位阵列具有用于接收绿色可见光和红外光的像素，用于接收红色可见光的像素和 红外光，用于接收蓝色可见光和红外光的像素，以及用于接收红外光的像素。

    Fan apparatus
    5.
    发明授权
    Fan apparatus 有权
    风扇装置

    公开(公告)号：US08226350B2

    公开(公告)日：2012-07-24

    申请号：US12103918

    申请日：2008-04-16

    申请人： Tomo Hayashigaito ,  Kenji Iwamoto ,  Yoshihisa Kato ,  Hironobu Nishida ,  Suguru Yamada ,  Manabu Miyakoda

    发明人： Tomo Hayashigaito ,  Kenji Iwamoto ,  Yoshihisa Kato ,  Hironobu Nishida ,  Suguru Yamada ,  Manabu Miyakoda

    IPC分类号： F04D29/54

    CPC分类号： F04D19/007 ,  F04D25/0613 ,  F04D29/526

    摘要： A fan apparatus includes a casing and a fan unit. The casing is a hollow member having an inlet and an outlet. The fan unit has an inlet and an outlet, and includes a plurality of axial fans. The fan unit is disposed on the inside of the casing, and the inlet of the fan unit is disposed in the vicinity of the inlet of the casing. The position of the fan unit within the casing can be varied in order to alter the air flow and static pressure of the air discharged by the fan apparatus.

    摘要翻译： 风扇装置包括壳体和风扇单元。 壳体是具有入口和出口的中空构件。 风扇单元具有入口和出口，并且包括多个轴流风扇。 风扇单元设置在壳体的内部，风扇单元的入口设置在壳体的入口附近。 风扇单元在壳体内的位置可以变化，以便改变由风扇装置排放的空气的空气流量和静压力。

    Semiconductor memory device including FET memory elements
    6.
    发明授权
    Semiconductor memory device including FET memory elements 有权
    半导体存储器件包括FET存储元件

    公开(公告)号：US08004871B2

    公开(公告)日：2011-08-23

    申请号：US12405799

    申请日：2009-03-17

    申请人： Yukihiro Kaneko ,  Yoshihisa Kato

    发明人： Yukihiro Kaneko ,  Yoshihisa Kato

    IPC分类号： G11C11/22

    CPC分类号： G11C11/22 ,  G11C11/5657 ,  H01L27/1159 ,  H01L27/11597 ,  H01L27/12 ,  H01L29/6684 ,  H01L29/78391

    摘要： A memory cell includes a memory element including a MFSFET having a gate insulating film made of a ferroelectric film, and a selection switching element including a MISFET having a gate insulating film made of a paraelectric film. A load element for a read operation is connected in series to the memory cell. The ferroelectric film and the paraelectric film are stacked with a semiconductor film being interposed therebetween. The semiconductor film forms a common channel shared by the MFSFET and the MISFET. The load element includes a MISFET having a channel made of the semiconductor film or a resistance element having a resistor made of the semiconductor film.

    摘要翻译： 存储单元包括存储元件，其包括具有由铁电体膜构成的栅极绝缘膜的MFSFET，以及选择开关元件，其包括具有由绝缘膜形成的栅极绝缘膜的MISFET。 用于读取操作的负载元件与存储器单元串联连接。 铁电体膜和对称电介质膜层叠有半导体膜。 半导体膜形成由MFSFET和MISFET共享的公共通道。 负载元件包括具有由半导体膜形成的沟道的MISFET或具有由半导体膜制成的电阻器的电阻元件。

    Solid-state imaging device
    7.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号：US07956916B2

    公开(公告)日：2011-06-07

    申请号：US12195584

    申请日：2008-08-21

    申请人： Takahiko Murata ,  Yoshihisa Kato ,  Shigetaka Kasuga ,  Takayoshi Yamada

    发明人： Takahiko Murata ,  Yoshihisa Kato ,  Shigetaka Kasuga ,  Takayoshi Yamada

    IPC分类号： H04N5/335

    CPC分类号： H04N5/37452 ,  H04N5/35581 ,  H04N5/3559

    摘要： Provided is a solid-state imaging device having pixel units that are two-dimensionally arranged, and including: a photodiode that generates an optical signal charge corresponding to an intensity and an exposure time of light; a MOS transistor that transfers the optical signal charge; an accumulating unit that generates a voltage corresponding to the signal charge through the MOS transistor; a storing unit that stores a voltage corresponding to an optical signal charge in the accumulating unit; and a voltage setting unit that sets a value of a voltage in the accumulating unit to a value corresponding to the voltage in the storing unit.

    摘要翻译： 提供一种具有二维排列的像素单元的固态成像装置，包括：产生对应于光的强度和曝光时间的光信号电荷的光电二极管; 传输光信号电荷的MOS晶体管; 累积单元，其产生对应于通过MOS晶体管的信号电荷的电压; 存储单元，其将与所述积累单元中的光信号电荷相对应的电压存储; 以及电压设定单元，其将所述累积单元中的电压值设定为与所述存储单元中的电压对应的值。

    Semiconductor memory and driving method for the same
    8.
    发明授权
    Semiconductor memory and driving method for the same 失效
    半导体存储器和驱动方法相同

    公开(公告)号：US07629635B2

    公开(公告)日：2009-12-08

    申请号：US11520011

    申请日：2006-09-13

    申请人： Kazuhiro Kaibara ,  Shinzo Koyama ,  Yoshihisa Kato

    发明人： Kazuhiro Kaibara ,  Shinzo Koyama ,  Yoshihisa Kato

    IPC分类号： H01L29/51

    CPC分类号： H01L27/11502 ,  H01L21/28291 ,  H01L29/78391

    摘要： A semiconductor memory includes a conducting film formed on a substrate; a ferroelectric film formed above or below the conducting film; a source electrode and a drain electrode disposed in positions opposing the conducting film with the ferroelectric film sandwiched therebetween and spaced from each other; and an insulating film formed between the source electrode and the drain electrode.

    摘要翻译： 半导体存储器包括形成在基板上的导电膜; 形成在导电膜上方或下方的铁电膜; 源电极和漏电极，设置在与导电膜相对的位置，铁电体膜夹在它们之间并彼此间隔开; 以及形成在源电极和漏电极之间的绝缘膜。

    SEMICONDUCTOR MEMORY DEVICE
    9.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权
    半导体存储器件

    公开(公告)号：US20090290404A1

    公开(公告)日：2009-11-26

    申请号：US12405799

    申请日：2009-03-17

    申请人： Yukihiro KANEKO ,  Yoshihisa Kato

    发明人： Yukihiro KANEKO ,  Yoshihisa Kato

    IPC分类号： G11C11/22 ,  G11C11/00 ,  H01L27/115

    CPC分类号： G11C11/22 ,  G11C11/5657 ,  H01L27/1159 ,  H01L27/11597 ,  H01L27/12 ,  H01L29/6684 ,  H01L29/78391

    摘要： A memory cell includes a memory element including a MFSFET having a gate insulating film made of a ferroelectric film, and a selection switching element including a MISFET having a gate insulating film made of a paraelectric film. A load element for a read operation is connected in series to the memory cell. The ferroelectric film and the paraelectric film are stacked with a semiconductor film being interposed therebetween. The semiconductor film forms a common channel shared by the MFSFET and the MISFET. The load element includes a MISFET having a channel made of the semiconductor film or a resistance element having a resistor made of the semiconductor film.

    摘要翻译： 存储单元包括存储元件，其包括具有由铁电体膜构成的栅极绝缘膜的MFSFET，以及选择开关元件，其包括具有由绝缘膜形成的栅极绝缘膜的MISFET。 用于读取操作的负载元件与存储器单元串联连接。 铁电体膜和对称电介质膜层叠有半导体膜。 半导体膜形成由MFSFET和MISFET共享的公共通道。 负载元件包括具有由半导体膜形成的沟道的MISFET或具有由半导体膜制成的电阻器的电阻元件。