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    MEMORY ELEMENT AND MEMORY DEVICE
    83.
    发明申请
    MEMORY ELEMENT AND MEMORY DEVICE 审中-公开

    公开(公告)号：US20180006211A1

    公开(公告)日：2018-01-04

    申请号：US15646544

    申请日：2017-07-11

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10 ,  H01L43/08

    CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and in regard to the insulating layer and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film.

    MAGNETORESISTIVE ELEMENT
    85.
    发明申请
    MAGNETORESISTIVE ELEMENT 审中-公开
    磁电元件

    公开(公告)号：US20170069830A1

    公开(公告)日：2017-03-09

    申请号：US15355327

    申请日：2016-11-18

    Applicant: Sony Corporation

    Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

    IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  H01L43/08

    CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive element includes a laminated structure including a plurality of fixed layers, an intermediate layer formed of a non-magnetic material, and a recording layer, the plurality of fixed layers being laminated via a non-magnetic layer, the plurality of fixed layers having at least a first fixed layer and a second fixed layer, the following formula being satisfied: S1>S2 (wherein S1 is an area of a portion of the first fixed layer adjacent to the intermediate layer, which faces the intermediate layer, and S2 is an area of the fixed layer having the smallest area out of the fixed layers other than the first fixed layer).

    Abstract translation: 磁阻元件包括层叠结构，其包括多个固定层，由非磁性材料形成的中间层和记录层，所述多个固定层经由非磁性层层叠，所述多个固定层具有 至少第一固定层和第二固定层，满足以下公式：S1> S2（其中S1是与中间层相邻的第一固定层的面向中间层的部分的面积，S2是 固定层的除了第一固定层之外的固定层中具有最小面积的区域）。

    STORAGE ELEMENT AND STORAGE APPARATUS
    87.
    发明申请
    STORAGE ELEMENT AND STORAGE APPARATUS 审中-公开
    存储元件和存储设备

    公开(公告)号：US20160351794A1

    公开(公告)日：2016-12-01

    申请号：US15233468

    申请日：2016-08-10

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: H01L43/02 ,  G11B5/39 ,  G11C11/15 ,  H01L27/22 ,  H01L43/08

    CPC classification number: G11C11/161 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/15 ,  G11C11/155 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

    Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

    Abstract translation: 存储元件包括层结构，该层结构包括具有根据信息改变的磁化方向的存储层，具有固定的磁化方向的磁化固定层和设置在其间的中间层，该中间层包含非磁性材料。 磁化固定层具有至少两个铁磁层，其具有从垂直于膜表面的方向倾斜的磁化方向，这两个铁磁层层叠并磁耦合在其间插入耦合层。 该构造可以有效地防止由于存储层和磁化固定层的磁化方向基本上平行或反平行的磁化反转时间的发散，减少写入错误，并且能够在短时间内实现写入操作。

    STORAGE ELEMENT, STORAGE DEVICE, AND MAGNETIC HEAD
    89.
    发明申请
    STORAGE ELEMENT, STORAGE DEVICE, AND MAGNETIC HEAD 有权
    存储元件，存储设备和磁头

    公开(公告)号：US20160268496A1

    公开(公告)日：2016-09-15

    申请号：US15031092

    申请日：2014-10-20

    Applicant: SONY CORPORATION

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

    IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08

    CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: A storage element having a layered structure and being configured for storing information is disclosed. In one example, the storage element comprises a storage portion with a storage magnetization that is perpendicular to a film surface of the layered structure, wherein a direction of the storage magnetization is configured to change according to the information. The storage element also includes a fixed magnetization portion with reference magnetization serving as a reference to the storage magnetization, and an intermediate portion between the storage portion and the fixed magnetization portion that is made of a non-magnetic material. The fixed magnetization portion includes a laminated ferrimagnetic structure that comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The fixed magnetization portion includes a first magnetic material that is an alloy or a laminated structure including Pt, Co, and Y.Storage devices including the storage element are also disclosed.

    Abstract translation: 还公开了包括存储元件的存储设备。

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