公开(公告)号：US20210098603A1

公开(公告)日：2021-04-01

申请号：US16820175

申请日：2020-03-16

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Bwo-Ning Chen ,  Xusheng Wu ,  Chang-Miao Liu ,  Shih-Hao Lin

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/165 ,  H01L21/02 ,  H01L21/768

摘要： A semiconductor structure includes source/drain (S/D) features disposed over a semiconductor substrate, a metal gate stack disposed between the S/D features, where the metal gate stack traverses a channel region between the S/D features, gate spacers disposed on sidewalls of the metal gate stack, and an etch-stop layer (ESL) disposed over the gate spacers and the S/D features. The semiconductor structure further includes an oxide liner disposed on the ESL, where the oxide liner includes silicon oxide and silicon dioxide, and an interlayer dielectric (ILD) layer disposed on the oxide liner, where composition of the ILD layer is different from composition of the oxide liner.

公开(公告)号：US20210098473A1

公开(公告)日：2021-04-01

申请号：US17009034

申请日：2020-09-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shih-Hao Lin ,  Kian-Long Lim ,  Chih-Chuan Yang ,  Chia-Hao Pao ,  Jing-Yi Lin

IPC分类号： H01L27/11 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/8238 ,  H01L29/66

摘要： A substrate includes a first doped region having a first type dopant, and a second doped region having a second type dopant and adjacent to the first doped region. A stack is formed that includes first layers and second layers alternating with each other. The first and second layers each have a first and second semiconductor material, respectively. The second semiconductor material is different than the first semiconductor material. A mask element is formed that has an opening in a channel region over the second doped region. A top portion of the stack not covered by the mask element is recessed. The stack is then processed to form a first and a second transistors. The first transistor has a first number of first layers. The second transistor has a second number of first layers. The first number is greater than the second number.