Substrate treatment system, substrate treatment method, and computer readable storage medium
    81.
    发明授权
    Substrate treatment system, substrate treatment method, and computer readable storage medium 有权
    底物处理系统,底物处理方法和计算机可读存储介质

    公开(公告)号:US08168378B2

    公开(公告)日:2012-05-01

    申请号:US12852855

    申请日:2010-08-09

    IPC分类号: G03F7/00 G03F7/26 G03F7/40

    摘要: In the present invention, a plurality of heat treatment plates are provided side by side in a linear form on a base of a heat treatment apparatus in a coating and developing treatment system. In the heat treatment apparatus, three transfer member groups are provided which transfer a substrate in zones between adjacent heat treatment plates. At the time when performing a pre-baking treatment in the heat treatment apparatus, the substrate is transferred in order to the heat treatment plates at the same temperature, whereby the heat treatment is dividedly performed on the heat treatment plates. According to the present invention, substrates are subjected to heat treatment along the same route, so that the thermal histories are made uniform among the substrates.

    摘要翻译: 在本发明中,在涂布显影处理系统的热处理装置的基座上并列设置多个热处理板。 在热处理装置中,设置三个传送部件组,其在相邻的热处理板之间的区域中传送基板。 在热处理装置中进行预烘烤处理时,在相同的温度下将基板转印到热处理板上,由此热处理在热处理板上分开进行。 根据本发明,沿着相同的路线对基板进行热处理,从而使基板之间的热历程均匀。

    SUBSTRATE PROCESSING METHOD, COMPUTER-READABLE STORAGE MEDIUM AND SUBSTRATE PROCESSING SYSTEM
    83.
    发明申请
    SUBSTRATE PROCESSING METHOD, COMPUTER-READABLE STORAGE MEDIUM AND SUBSTRATE PROCESSING SYSTEM 有权
    基板处理方法,计算机可读存储介质和基板处理系统

    公开(公告)号:US20110242513A1

    公开(公告)日:2011-10-06

    申请号:US13159055

    申请日:2011-06-13

    IPC分类号: G03B27/42

    摘要: A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern.

    摘要翻译: 基于先前获得的抗蚀剂图案的尺寸和热处理温度之间的关系,基于热处理后的抗蚀剂图案的第二维度,基于基板上的抗蚀剂图案的第一尺寸的测量来校正热处理的处理温度 在校正后的处理温度下进行处理,将第二维度的基板内的分布分类成由近似曲面和非线性成分表示的线性分量,根据线性分量来校正曝光处理的处理条件 从先前获得的抗蚀剂图案的尺寸和曝光处理的处理条件之间的关系以及在温度校正步骤中校正的处理温度下的热处理和在曝光条件校正步骤中校正的处理条件下的曝光处理进行到 形成一个预先 确定模式。

    SUBSTRATE PROCESSING METHOD AND APPARATUS
    85.
    发明申请
    SUBSTRATE PROCESSING METHOD AND APPARATUS 失效
    基板加工方法和装置

    公开(公告)号:US20110086514A1

    公开(公告)日:2011-04-14

    申请号:US12973111

    申请日:2010-12-20

    IPC分类号: H01L21/31

    摘要: A substrate processing method is arranged to perform a heat process on a substrate with a coating film formed thereon to bake and cure the coating film. At first, the substrate, with the coating film formed thereon, is held at a preparatory temperature lower than a lower limit of temperature for baking and curing the coating film, to adjust distribution of a predetermined component in the coating film. Then, the substrate, with distribution of the predetermined component thus adjusted, is subjected to a heat process at a temperature not lower than the lower limit of temperature.

    摘要翻译: 基板处理方法被布置成在其上形成有涂膜的基板上进行热处理以烘烤和固化涂膜。 首先,将其上形成有涂膜的基板保持在低于用于烘烤和固化涂膜的温度下限的预备温度,以调节涂膜中预定组分的分布。 然后,将如此调整的预定部件的分布的基板在不低于温度下限的温度下进行加热处理。

    Substrate treatment system, substrate treatment method, and computer readable storage medium
    86.
    发明授权
    Substrate treatment system, substrate treatment method, and computer readable storage medium 有权
    底物处理系统,底物处理方法和计算机可读存储介质

    公开(公告)号:US07816276B2

    公开(公告)日:2010-10-19

    申请号:US11627540

    申请日:2007-01-26

    摘要: In the present invention, a plurality of heat treatment plates are provided side by side in a linear form on a base of a heat treatment apparatus in a coating and developing treatment system. In the heat treatment apparatus, three transfer member groups are provided which transfer a substrate in zones between adjacent heat treatment plates. At the time when performing a pre-baking treatment in the heat treatment apparatus, the substrate is transferred in order to the heat treatment plates at the same temperature, whereby the heat treatment is dividedly performed on the heat treatment plates. According to the present invention, substrates are subjected to heat treatment along the same route, so that the thermal histories are made uniform among the substrates.

    摘要翻译: 在本发明中,在涂布显影处理系统的热处理装置的基座上并列设置多个热处理板。 在热处理装置中,设置三个传送部件组,其在相邻的热处理板之间的区域中传送基板。 在热处理装置中进行预烘烤处理时,在相同的温度下将基板转印到热处理板上,由此热处理在热处理板上分开进行。 根据本发明,沿着相同的路线对基板进行热处理,从而使基板之间的热历程均匀。

    Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device
    87.
    发明授权
    Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device 失效
    平版印刷设备,形成图案的方法和制造半导体器件的方法

    公开(公告)号:US07796237B2

    公开(公告)日:2010-09-14

    申请号:US12341179

    申请日:2008-12-22

    摘要: A lithography apparatus includes a resist processing apparatus to perform a process of applying a resist on a substrate, a process of heating a resist film on the substrate, and a process of developing the resist film on the substrate, an immersion exposure apparatus including a projection optical system which projects an image of a pattern on a photomask onto the resist film and configured to perform exposure through liquid located on an optical path between the projection optical system and resist film, a transporting apparatus connected to the resist processing and immersion exposure apparatuses to perform transportation of the substrate between the resist processing and immersion exposure apparatuses, and a temperature/humidity control apparatus configured to control at least one of temperature and humidity in at least one of the resist processing and transporting apparatuses based on temperature and humidity or the in humidity the immersion exposure apparatus.

    摘要翻译: 光刻设备包括:抗蚀剂处理设备,用于执行在基板上施加抗蚀剂的工艺;加热基板上的抗蚀剂膜的工艺;以及在基板上显影抗蚀剂膜的工艺;浸渍曝光设备,包括:投影 光学系统,其将光掩模上的图案的图像投影到抗蚀剂膜上,并且被配置为通过位于投影光学系统和抗蚀剂膜之间的光路上的液体进行曝光,连接到抗蚀剂处理和浸没曝光装置的传送装置 在抗蚀剂处理和浸没曝光装置之间执行基板的传送,以及温度/湿度控制装置,其被配置为基于温度和湿度控制至少一个抗蚀剂处理和输送装置中的温度和湿度, 湿度浸渍曝光设备。

    PRINTING APPARATUS AND PRINTING METHOD
    89.
    发明申请
    PRINTING APPARATUS AND PRINTING METHOD 有权
    印刷装置和印刷方法

    公开(公告)号:US20100033526A1

    公开(公告)日:2010-02-11

    申请号:US12535233

    申请日:2009-08-04

    IPC分类号: B41J29/38

    CPC分类号: B41J2/2132

    摘要: A multipass printing is performed by setting the print permission ratios, predetermined for the nozzles in adjoining first and second blocks, in a way that satisfies the following conditions (i) and (ii). (i) The print permission ratio in the boundary section between the first and second blocks represents a value between the print permission ratio in the non-boundary section of the first block and that of the second block. (ii) The print permission ratios in the non-boundary sections of the first and second blocks are each set substantively constant. This arrangement allows the print permission ratio to be adjusted among nozzle blocks, thus satisfying the condition that the print permission ratio in a boundary between adjoining nozzles blocks does not change sharply and that the print permission ratio is substantively constant in each of the nozzle blocks. It is possible to suppress “interband variations”, “seam lines” and “intraband variations” coincidentally.

    摘要翻译: 通过以满足以下条件(i)和(ii)的方式设定对邻接的第一和第二块中的喷嘴预定的打印许可比来执行多页打印。 (i)第一块和第二块之间的边界部分中的打印许可比率表示第一块的非边界部分中的打印许可比与第二块的非边界部分之间的值。 (ii)第一和第二块的非边界部分中的打印许可比率各自设定为实质上不变的。 这样可以在喷嘴块之间调整打印许可比例,从而满足相邻喷嘴块之间的边界的打印许可比率不急剧变化,并且在每个喷嘴块中打印允许比例基本上恒定的条件。 可以巧合地抑制“带间变化”,“缝线”和“内部变化”。