公开(公告)号：US20060110687A1

公开(公告)日：2006-05-25

申请号：US11266197

申请日：2005-11-04

申请人： Kenji Kawano ,  Tsuyoshi Shibata ,  Kei Hayasaki

发明人： Kenji Kawano ,  Tsuyoshi Shibata ,  Kei Hayasaki

IPC分类号： G03F7/00 ,  G03F7/38

CPC分类号： G03F7/38 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2008 ,  G03F7/3021 ,  G03F7/70425 ,  G03F7/70558 ,  G03F7/70783

摘要： A pattern forming method is disclosed, which comprises forming a photo resist film on a substrate, irradiating the photo resist film with an energy ray to form a desired latent image pattern, placing the substrate on a spacer provided on a hot plate, heating the photo resist film by using the hot plate, and developing the photo resist film to form a photo resist pattern, wherein an amount of irradiation of the energy ray is set such that the amount of irradiation of the energy ray in an exposure region in which a distance between a back surface of the substrate and an upper surface of the hot plate is long is larger than the amount of irradiation of the energy ray in an exposure region in which a distance between the back surface of the substrate and the upper surface of the hot plate is short.

公开(公告)号：US07972765B2

公开(公告)日：2011-07-05

申请号：US12457108

申请日：2009-06-01

申请人： Kenji Kawano ,  Tsuyoshi Shibata ,  Kei Hayasaki

发明人： Kenji Kawano ,  Tsuyoshi Shibata ,  Kei Hayasaki

IPC分类号： G03F7/26

CPC分类号： G03F7/38 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2008 ,  G03F7/3021 ,  G03F7/70425 ,  G03F7/70558 ,  G03F7/70783

摘要： A pattern forming method is disclosed, which comprises forming a photo resist film on a substrate, irradiating the photo resist film with an energy ray to form a desired latent image pattern, placing the substrate on a spacer provided on a hot plate, heating the photo resist film by using the hot plate, and developing the photo resist film to form a photo resist pattern, wherein an amount of irradiation of the energy ray is set such that the amount of irradiation of the energy ray in an exposure region in which a distance between a back surface of the substrate and an upper surface of the hot plate is long is larger than the amount of irradiation of the energy ray in an exposure region in which a distance between the back surface of the substrate and the upper surface of the hot plate is short.

摘要翻译： 公开了一种图案形成方法，其包括在基板上形成光致抗蚀剂膜，用能量射线照射光致抗蚀剂膜以形成期望的潜像图案，将基板放置在设置在热板上的间隔物上，加热照片 通过使用热板进行抗蚀剂膜的显影，并且显影光致抗蚀剂膜以形成光致抗蚀剂图案，其中能量射线的照射量被设定为使得在曝光区域中的能量射线的照射量 在基板的背面和加热板的上表面之间的距离大于在基板的背面与热的上表面之间的距离的曝光区域中的能量射线的照射量 盘子很短。

公开(公告)号：US07563561B2

公开(公告)日：2009-07-21

申请号：US11266197

申请日：2005-11-04

申请人： Kenji Kawano ,  Tsuyoshi Shibata ,  Kei Hayasaki

发明人： Kenji Kawano ,  Tsuyoshi Shibata ,  Kei Hayasaki

IPC分类号： G03F7/26

CPC分类号： G03F7/38 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2008 ,  G03F7/3021 ,  G03F7/70425 ,  G03F7/70558 ,  G03F7/70783

摘要： A pattern forming method is disclosed, which comprises forming a photo resist film on a substrate, irradiating the photo resist film with an energy ray to form a desired latent image pattern, placing the substrate on a spacer provided on a hot plate, heating the photo resist film by using the hot plate, and developing the photo resist film to form a photo resist pattern, wherein an amount of irradiation of the energy ray is set such that the amount of irradiation of the energy ray in an exposure region in which a distance between a back surface of the substrate and an upper surface of the hot plate is long is larger than the amount of irradiation of the energy ray in an exposure region in which a distance between the back surface of the substrate and the upper surface of the hot plate is short.

摘要翻译： 公开了一种图案形成方法，其包括在基板上形成光致抗蚀剂膜，用能量射线照射光致抗蚀剂膜以形成期望的潜像图案，将基板放置在设置在热板上的间隔物上，加热照片 通过使用热板进行抗蚀剂膜的显影，并且显影光致抗蚀剂膜以形成光致抗蚀剂图案，其中能量射线的照射量被设定为使得在曝光区域中的能量射线的照射量 在基板的背面和加热板的上表面之间的距离大于在基板的背面与热的上表面之间的距离的曝光区域中的能量射线的照射量 盘子很短。

公开(公告)号：US20090246710A1

公开(公告)日：2009-10-01

申请号：US12457108

申请日：2009-06-01

申请人： Kenji Kawano ,  Tsuyoshi Shibata ,  Kei Hayasaki

发明人： Kenji Kawano ,  Tsuyoshi Shibata ,  Kei Hayasaki

IPC分类号： G03F7/20

CPC分类号： G03F7/38 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2008 ,  G03F7/3021 ,  G03F7/70425 ,  G03F7/70558 ,  G03F7/70783

摘要： A pattern forming method is disclosed, which comprises forming a photo resist film on a substrate, irradiating the photo resist film with an energy ray to form a desired latent image pattern, placing the substrate on a spacer provided on a hot plate, heating the photo resist film by using the hot plate, and developing the photo resist film to form a photo resist pattern, wherein an amount of irradiation of the energy ray is set such that the amount of irradiation of the energy ray in an exposure region in which a distance between a back surface of the substrate and an upper surface of the hot plate is long is larger than the amount of irradiation of the energy ray in an exposure region in which a distance between the back surface of the substrate and the upper surface of the hot plate is short.

公开(公告)号：US06441351B2

公开(公告)日：2002-08-27

申请号：US09734924

申请日：2000-12-13

申请人： Kei Hayasaki ,  Shinichi Ito ,  Kenji Kawano

发明人： Kei Hayasaki ,  Shinichi Ito ,  Kenji Kawano

IPC分类号： H05B102

CPC分类号： H01L21/67115 ,  G03F7/168 ,  G03F7/38

摘要： A heating apparatus for performing heat treatment on a wafer applied with a resist before or after exposure includes a heating plate for heating a wafer which is placed on the heating plate, a light intensity detecting apparatus for irradiating light on the wafer to detect intensity of reflected light from the resist on the wafer, and a control section for controlling heating performed by the heating plate on the basis of the detected intensity of reflected light so that heating amount applied to a plurality of wafers becomes constant. Accordingly, the heating amount of the wafer can be controlled to be constant and variations in dimension of resist patterns can be reduced.

摘要翻译： 用于在曝光前后施加抗蚀剂的晶片上进行热处理的加热装置包括用于加热放置在加热板上的晶片的加热板，用于在晶片上照射光以检测反射的强度的光强度检测装置 来自晶片上的抗蚀剂的光，以及控制部分，用于根据检测到的反射光强度控制由加热板进行的加热，使得施加到多个晶片的加热量变得恒定。 因此，可以将晶片的加热量控制为恒定，并且可以减小抗蚀剂图案的尺寸变化。

公开(公告)号：US07683291B2

公开(公告)日：2010-03-23

申请号：US11411139

申请日：2006-04-26

申请人： Kei Hayasaki ,  Tsuyoshi Shibata ,  Koutarou Sho ,  Shinichi Ito

发明人： Kei Hayasaki ,  Tsuyoshi Shibata ,  Koutarou Sho ,  Shinichi Ito

IPC分类号： A21B1/00 ,  C23C16/00

CPC分类号： F27B17/0025 ,  F27B5/04 ,  F27D3/0084 ,  H01L21/67109

摘要： According to an aspect of the invention, there is provided a single substrate processing method which continuously heats substrates to be processed to which films containing solvents are applied, by use of a heating apparatus having an opening/closing mechanism, including supplying a gas containing a solvent contained in a film of a first substrate to be processed into the heating apparatus in a closed state of the opening/closing mechanism between processing of the first substrate to be processed and processing of a second substrate to be processed.

摘要翻译： 根据本发明的一个方面，提供了一种单一的基板处理方法，其通过使用具有打开/关闭机构的加热装置连续加热待加工的含有溶剂的薄膜的基板处理方法，该加热装置包括供给含有 在待处理的第一基板的处理和待处理的第二基板的处理之间的打开/关闭机构的闭合状态下，加热到加热装置的第一基板的膜中所含的溶剂。

公开(公告)号：US07662546B2

公开(公告)日：2010-02-16

申请号：US11304549

申请日：2005-12-16

申请人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara ,  Daisuke Kawamura ,  Kei Hayasaki

发明人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara ,  Daisuke Kawamura ,  Kei Hayasaki

IPC分类号： H05B3/68

CPC分类号： H01L21/6715 ,  B05C5/0254 ,  B05C11/08 ,  G03F7/168 ,  G03F7/3021 ,  G03F7/38 ,  G03F7/70358 ,  G03F7/70558 ,  H01L21/67109 ,  H01L21/67115

摘要： A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

摘要翻译： 用涂膜处理的基板的加热装置具有内部空间的室，在内部空间中加热被处理基板的加热板和分隔构件。 加热板具有支撑表面，该支撑表面支撑在腔室内待处理的基底。 分隔构件布置在腔室中以面向支撑表面。 分隔构件将内部空间分隔成第一和第二空间，并且具有允许第一和第二空间彼此连通的多个孔。 加热板的支撑表面设置在第一空间中。 形成空气流的气流形成机构设置在第二空间中。 该机理将从光致抗蚀剂膜蒸发的物质排出。

公开(公告)号：US06191397B1

公开(公告)日：2001-02-20

申请号：US09345749

申请日：1999-07-01

申请人： Kei Hayasaki ,  Shinichi Ito ,  Kenji Kawano

发明人： Kei Hayasaki ,  Shinichi Ito ,  Kenji Kawano

IPC分类号： H01L21205

CPC分类号： H01L21/67115 ,  G03F7/168 ,  G03F7/38

摘要： A heating apparatus for performing heat treatment on a wafer applied with a resist before or after exposure includes a heating plate for heating a wafer which is placed on the heating plate, a light intensity detecting apparatus for irradiating light on the wafer to detect intensity of reflected light from the resist on the wafer, and a control section for controlling heating performed by the heating plate on the basis of the detected intensity of reflected light so that heating amount applied to a plurality of wafers becomes constant. Accordingly, the heating amount of the wafer can be controlled to be constant and variations in dimension of resist patterns can be reduced.

摘要翻译： 用于在曝光前后施加抗蚀剂的晶片上进行热处理的加热装置包括用于加热放置在加热板上的晶片的加热板，用于在晶片上照射光以检测反射的强度的光强度检测装置 来自晶片上的抗蚀剂的光，以及控制部分，用于根据检测到的反射光强度控制由加热板进行的加热，使得施加到多个晶片的加热量变得恒定。 因此，可以将晶片的加热量控制为恒定，并且可以减小抗蚀剂图案的尺寸变化。

公开(公告)号：US20060289431A1

公开(公告)日：2006-12-28

申请号：US11411139

申请日：2006-04-26

申请人： Kei Hayasaki ,  Tsuyoshi Shibata ,  Koutarou Sho ,  Shinichi Ito

发明人： Kei Hayasaki ,  Tsuyoshi Shibata ,  Koutarou Sho ,  Shinichi Ito

IPC分类号： F27B5/14 ,  F27D11/00

CPC分类号： F27B17/0025 ,  F27B5/04 ,  F27D3/0084 ,  H01L21/67109

摘要： According to an aspect of the invention, there is provided a single substrate processing method which continuously heats substrates to be processed to which films containing solvents are applied, by use of a heating apparatus having an opening/closing mechanism, including supplying a gas containing a solvent contained in a film of a first substrate to be processed into the heating apparatus in a closed state of the opening/closing mechanism between processing of the first substrate to be processed and processing of a second substrate to be processed.

摘要翻译： 根据本发明的一个方面，提供了一种单一的基板处理方法，其通过使用具有打开/关闭机构的加热装置连续加热待加工的含有溶剂的薄膜的基板处理方法，该加热装置包括供给含有 在待处理的第一基板的处理和待处理的第二基板的处理之间的打开/关闭机构的闭合状态下，加热到加热装置的第一基板的膜中所含的溶剂。

公开(公告)号：US07510341B2

公开(公告)日：2009-03-31

申请号：US10878310

申请日：2004-06-29

申请人： Kei Hayasaki ,  Daizo Mutoh ,  Masafumi Asano ,  Tadahito Fujisawa ,  Tsuyoshi Shibata ,  Shinichi Ito

发明人： Kei Hayasaki ,  Daizo Mutoh ,  Masafumi Asano ,  Tadahito Fujisawa ,  Tsuyoshi Shibata ,  Shinichi Ito

IPC分类号： G03D5/00

CPC分类号： G03F7/70683 ,  G03F7/40

摘要： A temperature calibration method for a baking apparatus comprising forming a photoresist film onto a substrate, forming a latent image of a dose monitor mark onto the photoresist film, preparing baking processing apparatuses, baking the substrate or another substrate by temperature settings performed every repeat of a series of the forming the resist film and the forming the latent image with each prepared baking apparatus, cooling the baking-processed substrate, measuring a length of the latent image of the dose monitor mark after the cooling or a length of a dose monitor mark which being obtained by developing the resist film, determining relationship between a temperature setting and an effective dose in advance, and calibrating temperature settings corresponding to the each baking processing apparatus to be obtained a predetermined effective dose on the basis of the determining relationship and the measured length corresponding to the each baking processing apparatus.

摘要翻译： 一种用于烘烤设备的温度校准方法，包括在基板上形成光致抗蚀剂膜，在光致抗蚀剂膜上形成剂量监测标记的潜像，制备烘烤处理设备，通过每次重复执行的温度设置来烘烤基板或另一个基板 一系列形成抗蚀剂膜并用每个制备的烘烤装置形成潜像，冷却烘焙处理的基材，测量冷却后的剂量监测标记的潜像的长度或剂量监测标记的长度， 通过显影抗蚀剂膜，预先确定温度设定和有效剂量之间的关系，并且基于确定关系和测量长度来校准与每个烘焙处理设备相应的温度设置以获得预定有效剂量 对应于每个烘焙处理设备。