公开(公告)号：US07932513B2

公开(公告)日：2011-04-26

申请号：US12043617

申请日：2008-03-06

申请人： Keiji Hosotani ,  Yoshiaki Asao ,  Toshihiko Nagase

发明人： Keiji Hosotani ,  Yoshiaki Asao ,  Toshihiko Nagase

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L39/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  G11C11/1675 ,  H01L27/22 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a magnetoresistive effect element including a fixed layer having a fixed magnetization direction, a recording layer having a reversible magnetization direction, and a nonmagnetic layer formed between the fixed layer and the recording layer, the magnetization directions in the fixed layer and the recording layer being perpendicular to a film surface, and a heater layer in contact with the magnetoresistive effect element, the memory element being connected to the bit line, and formed to oppose a side surface of the first word line such that the memory element is insulated from the first word line.

摘要翻译： 磁性随机存取存储器包括沿第一方向运行的位线，沿与第一方向不同的第二方向运行的第一字线，以及具有包括具有固定磁化方向的固定层的磁阻效应元件的存储元件， 具有可逆磁化方向的记录层和形成在固定层和记录层之间的非磁性层，固定层和记录层中的磁化方向垂直于膜表面，以及与磁阻效应接触的加热器层 所述存储元件连接到所述位线，并形成为与所述第一字线的侧表面相对，使得所述存储元件与所述第一字线绝缘。

公开(公告)号：US20110062417A1

公开(公告)日：2011-03-17

申请号：US12700536

申请日：2010-02-04

申请人： Masayoshi Iwayama ,  Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Masayoshi Iwayama ,  Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

摘要： First semiconductor layers are in source/drain regions on the semiconductor substrate. A second semiconductor layer comprises first portions on the first semiconductor layers and a second portion on a channel region between the source/drain regions. Third semiconductor layers are on the first portions of the second semiconductor layer. A gate electrode is around the second portion of the second semiconductor layer via an insulating film. Contact plugs are in the first semiconductor layers, the first portions of the second semiconductor layers and the third semiconductor layers in the source/drain regions. A diameter of the contact plug in the second semiconductor layer is smaller than a diameter of the contact plug in the first and third semiconductor layers.

摘要翻译： 第一半导体层位于半导体衬底上的源/漏区中。 第二半导体层包括第一半导体层上的第一部分和源/漏区之间的沟道区上的第二部分。 第三半导体层位于第二半导体层的第一部分上。 栅电极经由绝缘膜在第二半导体层的第二部分周围。 接触插塞位于第一半导体层中，第二半导体层的第一部分和源/漏区中的第三半导体层。 第二半导体层中的接触插塞的直径小于第一和第三半导体层中的接触插塞的直径。

公开(公告)号：US20100102407A1

公开(公告)日：2010-04-29

申请号：US12556389

申请日：2009-09-09

申请人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano ,  Kuniaki Sugiura

发明人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano ,  Kuniaki Sugiura

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.

摘要翻译： 磁阻元件包括堆叠结构，其包括具有固定磁化方向的固定层，具有可变磁化方向的记录层和夹在固定层和记录层之间的非磁性层，覆盖周向表面的第一保护膜 层叠结构，由氮化硅制成，第二保护膜覆盖第一保护膜的周面，由氮化硅构成。 第一保护膜中的氢含量不大于4原子％，第二保护膜中的氢含量不低于6原子％。

公开(公告)号：US07706175B2

公开(公告)日：2010-04-27

申请号：US11839265

申请日：2007-08-15

申请人： Keiji Hosotani ,  Yoshiaki Asao ,  Akihiro Nitayama

发明人： Keiji Hosotani ,  Yoshiaki Asao ,  Akihiro Nitayama

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A magnetic random access memory includes a first wiring, a second wiring formed above and spaced apart from the first wiring, a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers, a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring, a first contact formed in contact with a side surface of the first side insulating film, and a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.

摘要翻译： 磁性随机存取存储器包括第一布线，形成在第一布线上方并与第一布线间隔开的第二布线;形成在与第一布线的上表面接触形成的第一布线和第二布线之间的磁阻效应元件，以及 具有形成在固定层和记录层之间的固定层，记录层和非磁性层，形成在磁阻效应元件上并与磁阻效应元件集成以形成堆叠层的金属层，形成第一侧绝缘膜 在金属层的侧表面，磁阻效应元件和第一布线，与第一侧绝缘膜的侧表面接触形成的第一触点和形成在金属层上的第三布线和第一触点电连接 连接磁阻效应元件和第一触点。

公开(公告)号：US20100097846A1

公开(公告)日：2010-04-22

申请号：US12563465

申请日：2009-09-21

申请人： Kuniaki Sugiura ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano

发明人： Kuniaki Sugiura ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano

IPC分类号： G11C11/02 ,  H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/12

摘要： A magnetic memory includes an interlayer insulation layer provided on a substrate, a conductive underlying layer provided on the interlayer insulation layer, and a magnetoresistive element provided on the underlying layer and including two magnetic layers and a nonmagnetic layer interposed between the magnetic layers. The underlying layer has an etching rate lower than an etching rate of each of the magnetic layers.

摘要翻译： 磁存储器包括设置在基板上的层间绝缘层，设置在层间绝缘层上的导电性底层，以及设置在下层上的磁阻元件，并且包括两个磁性层和介于该磁性层之间的非磁性层。 下层具有比每个磁性层的蚀刻速率低的蚀刻速率。

公开(公告)号：US20100047930A1

公开(公告)日：2010-02-25

申请号：US12605072

申请日：2009-10-23

申请人： Keiji HOSOTANI ,  Yoshiaki Asao ,  Akihiro Nitayama

发明人： Keiji HOSOTANI ,  Yoshiaki Asao ,  Akihiro Nitayama

IPC分类号： H01L21/00

CPC分类号： H01L27/228 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A magnetic random access memory includes a first wiring, a second wiring formed above and spaced apart from the first wiring, a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers, a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring, a first contact formed in contact with a side surface of the first side insulating film, and a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.

摘要翻译： 磁性随机存取存储器包括第一布线，形成在第一布线上方并与第一布线间隔开的第二布线;形成在与第一布线的上表面接触形成的第一布线和第二布线之间的磁阻效应元件，以及 具有形成在固定层和记录层之间的固定层，记录层和非磁性层，形成在磁阻效应元件上并与磁阻效应元件集成以形成堆叠层的金属层，形成第一侧绝缘膜 在金属层的侧表面，磁阻效应元件和第一布线，与第一侧绝缘膜的侧表面接触形成的第一触点和形成在金属层上的第三布线和第一触点电连接 连接磁阻效应元件和第一触点。

公开(公告)号：US20090296451A1

公开(公告)日：2009-12-03

申请号：US12406898

申请日：2009-03-18

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： G11C11/00 ,  G11C11/416 ,  G11C7/00 ,  H01L29/66

CPC分类号： G11C13/0069 ,  G11C13/0002 ,  G11C13/0097 ,  G11C16/0466 ,  G11C2013/0078 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/165

摘要： A resistance change memory includes a first interconnection, a second interconnection, a first resistance change element which has a first electrode, a second electrode, and a first tunnel insulating film provided between the first electrode and the second electrode, the first tunnel insulating film including a first trap region formed by introducing defects to trap holes or electrons, and the second electrode being connected to the first interconnection, and a first transistor whose current path has one end connected to the first electrode and the other end connected to the second interconnection.

摘要翻译： 电阻变化存储器包括第一互连，第二互连，第一电阻改变元件，其具有设置在第一电极和第二电极之间的第一电极，第二电极和第一隧道绝缘膜，第一隧道绝缘膜包括 通过引入缺陷以捕获空穴或电子而形成的第一陷阱区域，以及第二电极连接到第一互连件，以及第一晶体管，其电流通路的一端连接到第一电极，而另一端连接到第二互连。

公开(公告)号：US20090174007A1

公开(公告)日：2009-07-09

申请号：US12339814

申请日：2008-12-19

申请人： Jun NISHIMURA ,  Yoshiaki Asao

发明人： Jun NISHIMURA ,  Yoshiaki Asao

IPC分类号： H01L29/68

CPC分类号： H01L27/108 ,  H01L27/10802 ,  H01L29/7841

摘要： A semiconductor memory device comprising: a support substrate; an insulating film formed on the support substrate; a semiconductor film formed on the insulating film; a gate insulating film formed on the semiconductor film; a gate electrode film formed on the gate insulating film; and a source region and a drain region formed in the semiconductor film so as to sandwich the gate insulating film in a gate length direction, the source and drain regions contacting the insulating film at the bottom surface, and the semiconductor memory device storing data corresponding to the amount of charges accumulated in the semiconductor film surrounded by the insulating film, the gate insulating film, and the source and drain regions and electrically floated, wherein a border length between the source region and the gate insulating film contiguous to each other is different from a border length between the drain region and the gate insulating film to each other.

摘要翻译： 一种半导体存储器件，包括：支撑衬底; 形成在所述支撑基板上的绝缘膜; 形成在绝缘膜上的半导体膜; 形成在半导体膜上的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极膜; 以及形成在所述半导体膜中的源极区域和漏极区域，以便在栅极长度方向夹着所述栅极绝缘膜，所述源极和漏极区域在所述底面处与所述绝缘膜接触，并且所述半导体存储器件存储对应于 在由绝缘膜，栅极绝缘膜以及源极和漏极区域包围的半导体膜中积累的电荷量被电浮动，其中源极区域和栅极绝缘膜彼此相邻的边界长度不同于 漏极区域和栅极绝缘膜之间的边界长度彼此。

公开(公告)号：US07505306B2

公开(公告)日：2009-03-17

申请号：US11609487

申请日：2006-12-12

申请人： Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Yoshiaki Asao

发明人： Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Yoshiaki Asao

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic memory device includes a magnetization fixed layer provided above a semiconductor substrate surface and having a fixed magnetization direction. A first magnetization free layer is provided above the magnetization fixed layer, has variable magnetization direction, and has an easy magnetization axis extending along a plane intersecting the substrate surface and along a direction neither parallel nor perpendicular to the substrate surface. A second magnetization free layer is provided above the first magnetization free layer, has a magnetization that antiferromagnetically couples with the first magnetization free layer. A first write line is placed above and electrically connected to the second magnetization free layer, and extends in a direction that pierces the plane. A second write line faces the first and/or second magnetization free layer, and extends along the substrate surface and the plane and in a direction perpendicular to the first write line.

摘要翻译： 磁存储器件包括设置在半导体衬底表面上方并且具有固定的磁化方向的磁化固定层。 第一磁化自由层设置在磁化固定层的上方，具有可变的磁化方向，并且具有沿着与衬底表面相交的平面并且沿着不平行或垂直于衬底表面的方向延伸的易磁化轴。 第二磁化自由层设置在第一磁化自由层的上方，具有与第一磁化自由层反铁磁耦合的磁化。 第一写入线被放置在第二磁化自由层的上方并且电连接到第二写入线，并且沿着穿透该平面的方向延伸。 第二写入线面向第一和/或第二磁化自由层，并且沿着衬底表面和平面以及垂直于第一写入线的方向延伸。

公开(公告)号：US07414879B2

公开(公告)日：2008-08-19

申请号：US11313847

申请日：2005-12-22

申请人： Yoshiaki Asao ,  Akihiro Nitayama

发明人： Yoshiaki Asao ,  Akihiro Nitayama

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A semiconductor memory device includes a memory cell block including a plurality of memory cells connected in series between first node and second node, the memory cells including a magnetoresistive element and a switching transistor, which are connected in parallel, the magnetoresistive element being a spin injection type and including a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction changes, and a non-magnetic layer interposed between the fixed layer and the recording layer, a bit line connected to the first node via a selection transistor, a word line connected to a gate of the switching transistor, and a write line connected to the second node.

摘要翻译： 半导体存储器件包括存储单元块，其包括串联连接在第一节点和第二节点之间的多个存储器单元，存储单元包括并联连接的磁阻元件和开关晶体管，磁阻元件是自旋注入 并且包括其磁化方向固定的固定层，其磁化方向改变的记录层和介于固定层和记录层之间的非磁性层，经由选择晶体管连接到第一结点的位线， 连接到开关晶体管的栅极的字线和连接到第二节点的写入线。