公开(公告)号：US20060012282A1

公开(公告)日：2006-01-19

申请号：US11180297

申请日：2005-07-13

Applicant: Tsutomu Nanataki ,  Hirofumi Yamaguchi ,  Nobuyuki Kobayashi

Inventor： Tsutomu Nanataki ,  Hirofumi Yamaguchi ,  Nobuyuki Kobayashi

IPC: H01J1/38

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J2201/306 ,  H01J2201/3125 ,  H01J2329/00

Abstract: A higher performance dielectric device is provided. An electron emitter applying the dielectric device according to the present invention includes an emitter formed of a dielectric, and an upper electrode and a lower electrode to which a drive voltage is applied to cause electron emission. The emitter includes plural dielectric particles, and plural dielectric particles of smaller particle size which are filled in spaces between the plural dielectric particles. The emitter having the aforesaid construction is formed by an aerosol deposition method or a sol impregnation method.

Abstract translation: 提供了更高性能的电介质器件。 施加根据本发明的电介质器件的电子发射器包括由电介质形成的发射体，以及施加驱动电压以引起电子发射的上电极和下电极。 发射体包括填充在多个介电粒子之间的空间中的多个介电粒子和较小粒径的多个电介质粒子。 具有上述结构的发射体通过气溶胶沉积法或溶胶浸渍法形成。

公开(公告)号：US20050156500A1

公开(公告)日：2005-07-21

申请号：US11083680

申请日：2005-03-16

Applicant: Henryk Birecki ,  Vu Binh

Inventor： Henryk Birecki ,  Vu Binh

IPC: H01J1/304 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312 ,  H01J1/02

CPC classification number: B82Y10/00 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312

Abstract: The field emission planar electron emitter device is disclosed that has an emitter electrode, an extractor electrode, and a planar emitter emission layer, electrically coupled to the emitter electrode and the extractor electrode. The planar electron emitter is configured to bias electron emission in a central region of the emission layer in preference to an outer region thereof. One structural example that provides this biasing is achieved by fabricating the planar emitter emission layer so that it has an outer perimeter that is thicker in depth than at an interior portion of the planar emitter emission layer, which reduces electron beam emission at the outer perimeter when an electric field is applied between the emitter electrode and the extractor electrode. The electric field draws emission electrons from the surface of the planar emitter emission layer towards the extractor electrode at a higher rate at the interior portion than at the outer perimeter. The planar electron emitter device further includes a focusing electrode electrically coupled to the planar electron emitter.

公开(公告)号：US06914374B2

公开(公告)日：2005-07-05

申请号：US10043376

申请日：2002-01-09

Applicant: Henryk Birecki ,  Vu Thien Binh

Inventor： Henryk Birecki ,  Vu Thien Binh

IPC: H01J1/304 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312 ,  H01J1/02 ,  H01J1/30

CPC classification number: B82Y10/00 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312

Abstract: The field emission planar electron emitter device is disclosed that has an emitter electrode, an extractor electrode, and a planar emitter emission layer, electrically coupled to the emitter electrode and the extractor electrode. The planar electron emitter is configured to bias electron emission in a central region of the emission layer in preference to an outer region thereof. One structural example that provides this biasing is achieved by fabricating the planar emitter emission layer so that it has an outer perimeter that is thicker in depth than at an interior portion of the planar emitter emission layer, which reduces electron beam emission at the outer perimeter when an electric field is applied between the emitter electrode and the extractor electrode. The electric field draws emission electrons from the surface of the planar emitter emission layer towards the extractor electrode at a higher rate at the interior portion than at the outer perimeter. The planar electron emitter device further includes a focusing electrode electrically coupled to the planar electron emitter.

公开(公告)号：US20050116603A1

公开(公告)日：2005-06-02

申请号：US10901932

申请日：2004-07-29

Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

IPC: H01J1/05 ,  H01J1/14 ,  H01J1/312 ,  H01J1/38 ,  H01J1/48 ,  H01J19/06 ,  H01J31/12

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J31/127 ,  H01J2201/3125

Abstract: An electron emitter 10A has an emitter 12 made of a dielectric material and an upper electrode 14 and a lower electrode 16 for being supplied with a drive voltage Va for emitting electrons. The upper electrode 14 is disposed on an upper surface of the emitter, and the lower electrode 16 is disposed on a lower surface of the emitter 12. The upper electrode 14 has a plurality of through regions 20 through which the emitter 12 is exposed. Each of the through regions 20 of the upper electrode 14 has a peripheral portion 26 having a surface facing the emitter 12 and spaced from the emitter 12.

Abstract translation: 电子发射器10A具有由电介质材料制成的发射极12和用于发射电子的驱动电压Va的上电极14和下电极16。 上电极14设置在发射极的上表面上，下电极16设置在发射极12的下表面上。上电极14具有多个贯通区域20，发射极12通过该贯穿区域20露出。 上电极14的贯通区域20中的每一个具有周边部分26，该周边部分26具有面向发射极12并与发射极12间隔开的表面。

公开(公告)号：US06882100B2

公开(公告)日：2005-04-19

申请号：US10337685

申请日：2003-01-06

Applicant: Zhizhang Chen ,  Sriram Ramamoorthi ,  Terry E McMahon ,  Timothy F. Myers

Inventor： Zhizhang Chen ,  Sriram Ramamoorthi ,  Terry E McMahon ,  Timothy F. Myers

IPC: H01J31/12 ,  H01J1/312 ,  H01J9/02 ,  H01J21/06 ,  H01L29/02 ,  H01J1/30

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022

Abstract: A light device includes an electron supply defining an emitter surface. A dielectric tunneling layer is disposed between the electron supply and a cathode layer. The cathode layer has at least partial photon transparency that is substantially uniform across the emitter surface.

公开(公告)号：US20050073234A1

公开(公告)日：2005-04-07

申请号：US10877517

申请日：2004-06-25

Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

IPC: H01J1/30 ,  H01J1/312 ,  H01J1/38 ,  H01J31/12 ,  H01J63/02

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/3125

Abstract: An electron emitter has an emitter made of a dielectric material and an upper electrode and a lower electrode for being supplied with a drive voltage for emitting electrons. The upper electrode is disposed on an upper surface of the emitter, and the lower electrode is disposed on a lower surface of the emitter. The upper electrode has a plurality of through regions through which the emitter is exposed. Each of the through regions of the upper electrode has a peripheral portion having a surface facing the emitter and spaced from the emitter.

公开(公告)号：US20050029543A1

公开(公告)日：2005-02-10

申请号：US10935795

申请日：2004-09-07

Applicant: Alexander Govyadinov ,  Michael Regan

Inventor： Alexander Govyadinov ,  Michael Regan

IPC: H01J1/312 ,  H01J29/46 ,  H01L29/06 ,  H01L31/0328

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J29/467 ,  H01J2201/304 ,  H01J2201/3125

Abstract: An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.

Abstract translation: 发射体包括电子源和阴极。 阴极具有发射表面。 发射极还包括设置在电子源和阴极的发射表面之间的连续各向异性导电层。 各向异性导电层具有各向异性的电阻率分布，并且在发射体的发射表面上提供基本均匀的发射。

公开(公告)号：US06852554B2

公开(公告)日：2005-02-08

申请号：US10085866

申请日：2002-02-27

Applicant: Zhizhang John Chen ,  Sriram Ramamoorthi

Inventor： Zhizhang John Chen ,  Sriram Ramamoorthi

IPC: H01J1/312 ,  H01J9/02 ,  H01L21/00 ,  H01L29/06

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/025

Abstract: An emitter has a rapid thermal process (RTP) formed emission layer of SiO2, SiOxNy or combinations thereof. The emission layer formed by rapid thermal processing does not require electroforming to stabilize the film. The RTP grown films are stable and exhibit uniform characteristics from device to device.

Abstract translation: 发射体具有形成SiO 2，SiO x N y或其组合的快速热处理（RTP）发射层。 通过快速热处理形成的发射层不需要电铸来稳定膜。 RTP生长的膜是稳定的并且从器件到器件表现出均匀的特性。

公开(公告)号：US06841794B2

公开(公告)日：2005-01-11

申请号：US10369365

申请日：2003-02-18

Applicant: Zhizhang Chen ,  Hung Liao ,  Alexander Govyadinov

Inventor： Zhizhang Chen ,  Hung Liao ,  Alexander Govyadinov

IPC: H01J29/04 ,  H01J1/308 ,  H01J1/312 ,  H01J9/02 ,  H01J19/24 ,  H01J21/06 ,  H01J31/12 ,  H01L29/06 ,  H01L29/12

CPC classification number: B82Y10/00 ,  H01J1/308 ,  H01J1/312 ,  H01J9/022 ,  H01J31/127

Abstract: A method for emitting electrons includes the steps of applying a voltage to an electron source to cause hot electrons to be generated with the source, and applying an electric field to cause at least a portion of the hot electrons to be emitted from the electron source.

Abstract translation: 用于发射电子的方法包括以下步骤：向电子源施加电压以使源产生热电子，并且施加电场以使至少一部分热电子从电子源发射。

公开(公告)号：US20040251812A1

公开(公告)日：2004-12-16

申请号：US10853180

申请日：2004-05-26

Applicant: CANON KABUSHIKI KAISHA

Inventor： Ryoji Fujiwara ,  Yoji Teramoto

IPC: H01J001/00

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J1/312 ,  H01J1/316 ,  H01J9/027 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489 ,  Y10S977/846 ,  Y10S977/847 ,  Y10S977/848

Abstract: An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.

Abstract translation: 提供具有足够的开/关特性并且能够有效地以低电压发射电子的电子发射器件。 电子发射器件包括布置在衬底上的衬底，阴极电极，栅电极，覆盖阴极电极表面的绝缘层和通过用氢端接绝缘层的表面形成的偶极层。