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    Method of forming nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate
    82.
    发明授权
    Method of forming nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate 有权
    形成氮磷掺杂非晶硅作为场致发射显示器件基板电阻的方法

    公开(公告)号：US07097526B2

    公开(公告)日：2006-08-29

    申请号：US11167695

    申请日：2005-06-27

    Applicant: Kanwal K. Raina ,  Benham Moradi

    Inventor： Kanwal K. Raina ,  Benham Moradi

    IPC: H01J9/24

    CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

    Abstract: Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.

    Abstract translation: 这里描述的是用于场发射显示装置等的电阻层及其制造方法。 电阻层是掺杂有氮和磷的非晶硅层。 电阻层中的氮浓度优选为约5至15原子％。 硅中的氮和磷的存在防止Si原子扩散到金属导电层如铝中，甚至达到扩散和封装温度。 氮和磷还可以防止在电阻层和金属导体之间的边界处形成缺陷。 这导致更好地控制电阻器的短路和改善电阻率。

    Method of forming nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate
    85.
    发明申请
    Method of forming nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate 有权
    形成氮磷掺杂非晶硅作为场致发射显示器件基板电阻的方法

    公开(公告)号：US20050266765A1

    公开(公告)日：2005-12-01

    申请号：US11167695

    申请日：2005-06-27

    Applicant: Kanwal Raina ,  Benham Moradi

    Inventor： Kanwal Raina ,  Benham Moradi

    IPC: H01J1/02 ,  H01J1/304 ,  H01J1/62 ,  H01J9/02 ,  H01J19/02 ,  H01J63/04

    CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

    Abstract: Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.

    Abstract translation: 这里描述的是用于场发射显示装置等的电阻层及其制造方法。 电阻层是掺杂有氮和磷的非晶硅层。 电阻层中的氮浓度优选为约5至15原子％。 硅中的氮和磷的存在防止Si原子扩散到金属导电层如铝中，甚至达到扩散和封装温度。 氮和磷还可以防止在电阻层和金属导体之间的边界处形成缺陷。 这导致更好地控制电阻器的短路和改善电阻率。

    Thin film transistor structure for a field emission display and the method for making the same
    87.
    发明申请
    Thin film transistor structure for a field emission display and the method for making the same 失效
    用于场致发射显示器的薄膜晶体管结构及其制造方法

    公开(公告)号：US20050056846A1

    公开(公告)日：2005-03-17

    申请号：US10734288

    申请日：2003-12-15

    Applicant: Chun-Yao Huang ,  Cheng-Chung Chen ,  Yu-Wu Wang ,  Chen-Ming Chen ,  Huai-Yuan Tseng

    Inventor： Chun-Yao Huang ,  Cheng-Chung Chen ,  Yu-Wu Wang ,  Chen-Ming Chen ,  Huai-Yuan Tseng

    IPC: G09G3/22 ,  H01J31/12 ,  H01L21/336 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/04

    CPC classification number: H01L29/42384 ,  G09G3/22 ,  G09G2300/0809 ,  H01J31/127 ,  H01J2201/319 ,  H01L27/12 ,  H01L29/78645

    Abstract: A thin film transistor structure for a field emission display is disclosed, which has a substrate; a patterned poly-silicon layer having a source area, a drain area, and a channel on the substrate; a patterned first gate metal layer; a first gate-insulating layer sandwiched in between the poly-silicon layer and the first gate metal layer; a patterned second gate metal layer; and a second gate-insulating layer sandwiched in between the poly-silicon layer and the second gate metal layer; wherein the thickness of the second insulating layer is greater than that of the first gate-insulating layer, and the absolute voltage in the channel under the first gate metal layer is less than that under the second gate metal layer when a voltage higher than the threshold voltage thereof is applied to both of the first gate metal layer and the second gate metal layer.

    Abstract translation: 公开了一种用于场发射显示器的薄膜晶体管结构，其具有基板; 具有源极区域，漏极区域和沟道的图案化多晶硅层; 图案化的第一栅极金属层; 夹在所述多晶硅层和所述第一栅极金属层之间的第一栅极绝缘层; 图案化的第二栅极金属层; 以及夹在所述多晶硅层和所述第二栅极金属层之间的第二栅极绝缘层; 其中所述第二绝缘层的厚度大于所述第一栅极绝缘层的厚度，并且当所述第一栅极金属层下方的电压高于所述阈值时，所述第二栅极金属层下面的沟道中的绝对电压小于所述第二栅极金属层下方的绝缘电压 电压施加到第一栅极金属层和第二栅极金属层两者。

    Enhanced electron field emitter spindt tip and method for fabricating enhanced spindt tips
    88.
    发明授权
    Enhanced electron field emitter spindt tip and method for fabricating enhanced spindt tips 有权
    增强的电子场发射器尖端以及用于制造增强型尖端的方法

    公开(公告)号：US06817916B2

    公开(公告)日：2004-11-16

    申请号：US10622909

    申请日：2003-07-21

    Applicant: Arthur Piehl

    Inventor： Arthur Piehl

    IPC: H01J900

    CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/319

    Abstract: An enhanced Spindt-tip field emitter tip and a method for producing the enhanced Spindt-tip field emitter. A thin-film resistive heating element is positioned below the field emitter tip to allow for resistive heating of the tip in order to sharpen the tip and to remove adsorbed contaminants from the surface of the tip. Metal layers of the enhanced field emission device are separated by relatively thick dielectric bilayers, with the metal layers having increased thickness in the proximity of a cylindrical well in which the field emitter tip is deposited. Dielectric material is pulled back from the cylindrical aperture into which the field emitter tip is deposited in order to decrease buildup of conductive contaminants and the possibility of short circuits between metallic layers.

    Abstract translation: 增强的Spindt-tip场发射器尖端和用于产生增强的Spindt-tip场发射器的方法。 薄膜电阻加热元件位于场发射器尖端下方，以允许尖端的电阻加热，以便锐化尖端并从尖端的表面去除吸附的污染物。 增强型场致发射器件的金属层由相对厚的电介质双层隔开，金属层在其中沉积场致发射极尖端的圆柱形阱附近具有增加的厚度。 电介质材料从圆柱形孔中被拉回，放射场尖端被沉积到其中，以减少导电污染物的积聚和金属层之间短路的可能性。

    Method and apparatuses for providing uniform electron beams from field emission displays
    89.
    发明申请
    Method and apparatuses for providing uniform electron beams from field emission displays 失效
    用于从场发射显示器提供均匀电子束的方法和装置

    公开(公告)号：US20040212315A1

    公开(公告)日：2004-10-28

    申请号：US10852319

    申请日：2004-05-24

    Inventor： Robert T. Rasmussen

    IPC: G09G003/10

    CPC classification number: G09G3/22 ,  G09G2320/0233 ,  H01J29/467 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/4695

    Abstract: The invention includes field emitters, field emission displays (FEDs), monitors, computer systems and methods employing the same for providing uniform electron beams from cathodes of FED devices. The apparatuses each include electron beam uniformity circuitry. The electron beam uniformity circuit provides a grid voltage, VGrid, with a DC offset voltage sufficient to induce field emission from a cathode and a periodic signal superimposed on the DC offset voltage for varying the grid voltage at a frequency fast enough to be undetectable by the human eye. The cathodes may be of the micro-tipped or flat variety. The periodic signal may be sinusoidal with peak-to-peak voltage of between about 5 volts and about 50 volts.

    Abstract translation: 本发明包括场发射器，场致发射显示器（FED），监视器，计算机系统以及采用该系统的方法来从FED装置的阴极提供均匀的电子束。 这些装置各自包括电子束均匀性电路。 电子束均匀性电路提供具有足以引起来自阴极的场发射的DC偏移电压和叠加在DC偏移电压上的周期信号的电网电压VGrid，以便以足够快的频率来改变电网电压，以便不能被 人类的眼睛。 阴极可以是微尖或扁平的品种。 周期信号可以是正弦曲线，其中峰 - 峰电压介于约5伏至约50伏之间。

    Flat field emitter displays
    90.
    发明授权
    Flat field emitter displays 失效
    平场发射器显示

    公开(公告)号：US06727642B1

    公开(公告)日：2004-04-27

    申请号：US09646730

    申请日：2000-09-20

    Applicant: Gyu Hyeong Cho ,  Nam Sung Jung ,  Gyun Chae ,  Tae Ha Ryoo ,  Jon Woon Hong ,  Seung Tak Ryu ,  Young Ki Kim

    Inventor： Gyu Hyeong Cho ,  Nam Sung Jung ,  Gyun Chae ,  Tae Ha Ryoo ,  Jon Woon Hong ,  Seung Tak Ryu ,  Young Ki Kim

    IPC: H01J162

    CPC classification number: H01J1/304 ,  H01J2201/319 ,  H01J2329/00

    Abstract: Disclosed are flat panel field emitter displays whose unit cell structure adopt a planar cathode structure in stead of a conventional microtip structure, so as to increase the degree of integration and can be operated at low operation voltages at high speeds. In the structure, a channel insulator is formed below the cathode and underlaid by a gate. By means of the gate voltage, the electron emission from the cathode can be controlled. The electrodes in the structure are arranged in the order of anode, cathode and gate, allowing the simplification of processes. With the ease of controlling the distance between electrodes, the displays can be applied for almost all video systems from small sizes to large screen area displays, in place of conventional displays. The displays allows conventional semiconductor processes and facilities to be utilized as they are.

    Abstract translation: 公开了平板型场发射体显示器，其单体电池结构采用平面阴极结构代替常规微尖端结构，从而提高集成度，并可在高速下在低工作电压下工作。 在该结构中，沟槽绝缘体形成在阴极下方并由栅极覆盖。 通过栅极电压，可以控制来自阴极的电子发射。 结构中的电极按阳极，阴极和栅极的顺序排列，允许简化工艺。 通过容易地控制电极之间的距离，显示器可以应用于从小尺寸到大屏幕区域显示器的几乎所有的视频系统，代替传统的显示器。 这些显示器允许常规的半导体工艺和设备被使用。

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