利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

141 条记录 (耗时 0.021 秒)

    SURFACE ACOUSTIC WAVE (SAW) RESONATOR
    84.
    发明申请
    SURFACE ACOUSTIC WAVE (SAW) RESONATOR 有权
    表面声波（SAW）谐振器

    公开(公告)号：US20170063331A1

    公开(公告)日：2017-03-02

    申请号：US15009801

    申请日：2016-01-28

    申请人： Avago Technologies General IP (Singapore) Pte. Ltd.

    发明人： Stephen Roy Gilbert ,  Richard C. Ruby

    IPC分类号： H03H9/25 ,  H03H9/64

    CPC分类号： H03H9/02574 ,  H03H9/02818 ,  H03H9/02866 ,  H03H9/6483

    摘要： A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A silicon layer disposed between a first surface of the layer and a second surface of the piezoelectric layer. A first surface of the silicon layer has a smoothness sufficient to foster atomic bonding between the first surface of the silicon layer and the second surface of the piezoelectric layer.

    摘要翻译： 表面声波（SAW）谐振器包括设置在基板上的压电层和设置在压电层的第一表面上的多个电极。 在基板和压电层之间设置一层。 设置在该层的第一表面和该压电层的第二表面之间的硅层。 硅层的第一表面具有足以促进硅层的第一表面和压电层的第二表面之间的原子键合的平滑度。

    Surface acoustic wave device and filter
    85.
    发明授权
    Surface acoustic wave device and filter 有权
    表面声波装置和滤波器

    公开(公告)号：US09473108B2

    公开(公告)日：2016-10-18

    申请号：US14482272

    申请日：2014-09-10

    申请人： TAIYO YUDEN CO., LTD.

    发明人： Kentaro Nakamura ,  Hidetaro Nakazawa ,  Shogo Inoue ,  Jun Tsutsumi

    IPC分类号： H03H9/64 ,  H03H3/08 ,  H03H3/02 ,  H03H9/02

    CPC分类号： H03H9/6489 ,  H03H3/08 ,  H03H9/02818

    摘要： A surface acoustic wave device includes: a pair of comb-like electrodes formed on a piezoelectric substrate, each of which includes electrode fingers, dummy electrode fingers and a bus bar to which the electrode fingers and the dummy electrode fingers are connected, the electrode fingers and the dummy electrode fingers of one of the pair of comb-like electrodes facing the dummy electrode fingers and the electrode fingers of the other com-like electrode, respectively; and additional films extending in the form of a strip in a first direction in which the electrode fingers are arranged side by side, each of the additional films covering at least parts of gaps defined by ends of the electrode fingers of one of the pair of comb-like electrodes and ends of the dummy electrode fingers of the other comb-like electrode.

    摘要翻译： 表面声波装置包括：形成在压电基板上的一对梳状电极，每一个都包括电极指，虚拟电极指和连接有电极指和虚拟电极指的汇流条，电极指 并且一对梳状电极中的一个的虚拟电极指分别面对虚拟电极指和另一个com状电极的电极指; 以及在电极指并排布置的第一方向上以带状形式延伸的附加膜，每个附加膜覆盖由一对梳子之一的电极指的端部限定的至少部分间隙 电极和另一梳状电极的虚拟电极指的端部。

    HIGH REJECTION SURFACE ACOUSTIC WAVE DUPLEXER
    86.
    发明申请
    HIGH REJECTION SURFACE ACOUSTIC WAVE DUPLEXER 有权
    高阻抗表面声波复用器

    公开(公告)号：US20160028373A1

    公开(公告)日：2016-01-28

    申请号：US14730019

    申请日：2015-06-03

    申请人： Resonant Inc.

    发明人： James R. Costa ,  Kurt Raihn

    IPC分类号： H03H9/64 ,  H03H9/54

    CPC分类号： H03H9/725 ,  H03H9/02818 ,  H03H9/02905 ,  H03H9/02992 ,  H03H9/6409 ,  H03H9/6483

    摘要： Filer devices and duplexer devices are disclosed. A filter device includes two or more surface acoustic wave resonators, including at least a first shunt resonator, formed on a surface of a substrate. A ground conductor formed on the surface of the substrate connects the first shunt resonator to a ground pad. At least a portion of an edge of the ground conductor is shaped as a plurality of serrations.

    摘要翻译： 公开了文件装置和双工器装置。 滤波器装置包括两个或更多个表面声波谐振器，其包括形成在基板的表面上的至少第一并联谐振器。 形成在衬底的表面上的接地导体将第一并联谐振器连接到接地焊盘。 接地导体的边缘的至少一部分成形为多个锯齿状。

    Elastic wave element
    87.
    发明授权
    Elastic wave element 有权
    弹性波元件

    公开(公告)号：US09136458B2

    公开(公告)日：2015-09-15

    申请号：US14004163

    申请日：2012-03-05

    申请人： Tomoya Komatsu ,  Hiroyuki Nakamura ,  Tetsuya Tsurunari ,  Joji Fujiwara ,  Hidekazu Nakanishi

    发明人： Tomoya Komatsu ,  Hiroyuki Nakamura ,  Tetsuya Tsurunari ,  Joji Fujiwara ,  Hidekazu Nakanishi

    IPC分类号： H03H9/25 ,  H03H9/42 ,  H01L41/047 ,  H03H9/02

    CPC分类号： H03H9/25 ,  H01L41/047 ,  H03H9/02818 ,  H03H9/02992

    摘要： An elastic wave element includes a piezoelectric substrate, an IDT electrode, and a first dielectric film. The IDT electrode includes a first bus bar electrode, a second bus bar electrode, first electrode fingers, and second electrode fingers. The piezoelectric substrate includes a bus bar electrode region, an alternately disposed region, and an intermediate region. The first dielectric film is formed in at least a part of the intermediate region, and formed of a medium in which acoustic velocity of a transverse wave propagating in the first dielectric film is lower than acoustic velocity of a main elastic wave in the alternately disposed region.

    摘要翻译： 弹性波元件包括压电基片，IDT电极和第一电介质膜。 IDT电极包括第一母线电极，第二母线电极，第一电极指和第二电极指。 压电基板包括汇流条电极区域，交替设置的区域和中间区域。 第一电介质膜形成在中间区域的至少一部分中，并且由在第一电介质膜中传播的横波的声速低于交替设置区域中的主弹性波的声速的介质形成 。

    METHODS FOR NOISE REDUCTION AND QUALITY FACTOR IMPROVEMENT IN RESONATORS
    89.
    发明申请
    METHODS FOR NOISE REDUCTION AND QUALITY FACTOR IMPROVEMENT IN RESONATORS 有权
    谐振器噪声降低和质量因子改进方法

    公开(公告)号：US20140347138A1

    公开(公告)日：2014-11-27

    申请号：US14283557

    申请日：2014-05-21

    申请人： Rutgers, The State University of New Jersey

    发明人： Yook-Kong Yong ,  John R. Vig

    IPC分类号： H03L1/02

    CPC分类号： H03H9/02818 ,  H03H9/02086

    摘要： A low phase noise dual mode resonator and a method of making and using said resonator is disclosed. The dual mode resonator is capable of sustaining two frequency vibration modes simultaneously. The two frequency vibration modes are capable of exhibit non-linear coupling when one is driven at a higher voltage than the other. The dual mode resonator is configured such that the ratio of the two vibration frequency modes is a value that maximizes the non-linear coupling effect. As a result of the non-linear effect, the phase noise on the mode that is not overdriven is reduced.

    摘要翻译： 公开了一种低相位噪声双模谐振器和制造和使用所述谐振器的方法。 双模谐振器能够同时维持两个频率振动模式。 当两个频率振动模式在比另一个更高的电压下驱动时，两个频率振动模式能够表现出非线性耦合。 双模谐振器被配置为使得两个振动频率模式的比率是使非线性耦合效应最大化的值。 作为非线性效应的结果，不过度驱动的模式的相位噪声减小。

    Surface acoustic wave device
    90.
    发明授权
    Surface acoustic wave device 有权
    表面声波装置

    公开(公告)号：US08680744B2

    公开(公告)日：2014-03-25

    申请号：US13944906

    申请日：2013-07-18

    申请人： Murata Manufacturing Co., Ltd.

    发明人： Tetsuya Kimura ,  Michio Kadota

    IPC分类号： H01L41/08

    CPC分类号： H01L41/047 ,  H03H9/02818 ,  H03H9/14541

    摘要： A surface acoustic wave device includes a piezoelectric substrate made of lithium niobate and including grooves in a surface thereof. Each groove includes a finger of an IDT electrode made of copper. The IDT electrode includes a first electrode layer embedded in the grooves and a second electrode layer sticking out of the surface of the piezoelectric substrate. A normalized electrode thickness of the first electrode layer is about 1.0% to about 12.0% inclusive, and the normalized electrode thickness of the second electrode layer is about 1.0% to about 9.0% inclusive. The normalized electrode thickness of the entire IDT electrode is about 6.0% to about 13.0% inclusive.

    摘要翻译： 表面声波装置包括由铌酸锂制成并在其表面中包括凹槽的压电基片。 每个凹槽包括由铜制成的IDT电极的手指。 IDT电极包括嵌入槽中的第一电极层和从压电基板的表面伸出的第二电极层。 第一电极层的归一化电极厚度为约1.0％至约12.0％，第二电极层的归一化电极厚度为约1.0％至约9.0％。 整个IDT电极的归一化电极厚度约为6.0％至约13.0％。