X-ray source using electron impact excitation of high velocity liquid metal beam

    公开(公告)号:US10473599B2

    公开(公告)日:2019-11-12

    申请号:US15829068

    申请日:2017-12-01

    Abstract: An X-ray source uses excitation of a liquid metal beam of ions or ionized droplets to produce an X-ray output with higher brightness than conventional sources. The beam may be accelerated from a liquid metal source using an extraction electrode. The source may have an emitter tip, and the acceleration of the liquid metal may include field emission from a Taylor cone. An electrostatic or electromagnetic focusing electrode may be used to reduce a cross-sectional diameter of the beam. The liquid metal beam has a relatively high velocity as it does not suffer from flow turbulence, thus allowing for a more energetic excitation and a correspondingly higher brightness. A beam dump may also be used to collect the liquid metal beam after excitation, and may be concave with no direct sight lines to either an electron beam cathode or to X-ray windows of an enclosure for the source.

    SPECTRAL SELECTION COMPONENT FOR XUV RADIATION

    公开(公告)号:US20190287692A1

    公开(公告)日:2019-09-19

    申请号:US16461360

    申请日:2017-11-27

    Abstract: A spectral selection component for XUV radiation, includes a first multilayer mirror for receiving an XUV radiation beam along an input axis located in a first plane of incidence and a second multilayer mirror for receiving, in a second plane of incidence, an XUV radiation beam reflected by the first mirror in order to transmit the radiation to an output axis of the spectral selection component. One of the first and second mirrors has a first, high-pass energy spectral response, with a flank on the low-energy side with a steepness that is greater than 0.1 eV−1 and a rejection of low energies that is greater than 20, whereas the other mirror has a second, low-pass energy spectral response, with a flank on the high-energy side with a steepness that is greater than 0.1 eV−1 and a rejection of high energies that is greater than 20. Furthermore, the first and second mirrors have an only partial overlap in their spectral energy responses.

    INTENSITY ADAPTATION FILTER FOR EUV MICROLITHOGRAPHY, METHOD FOR PRODUCING SAME, AND ILLUMINATION SYSTEM HAVING A CORRESPONDING FILTER

    公开(公告)号:US20190285989A1

    公开(公告)日:2019-09-19

    申请号:US16432303

    申请日:2019-06-05

    Abstract: An optical element for an optical system that operates with working light in the wavelength spectrum of extreme ultraviolet light or soft X-ray radiation, in particular an optical system for EUV microlithography, that includes an absorber layer (12) for EUV or soft X-ray radiation. The absorber layer extends along an optically effective surface and has a thickness that is defined transversely with respect to the optically effective surface, wherein the thickness of the absorber layer varies over the optically effective surface. Also disclosed is a mirror formed by at least one roughened surface of the mirror, the roughness of which varies over the surface. In addition, an illumination system for an EUV projection exposure apparatus, and a method for producing a corresponding intensity adaptation filter are disclosed.

    METHOD FOR PRODUCING A MICROSTRUCTURE COMPONENT, MICROSTRUCTURE COMPONENT AND X-RAY DEVICE

    公开(公告)号:US20190267149A1

    公开(公告)日:2019-08-29

    申请号:US16281299

    申请日:2019-02-21

    Abstract: A method for producing a microstructure component, a microstructure component and an x-ray device are disclosed. In the method, a plurality of punctiform injection structures are inserted in a grid in a first substrate direction and a second substrate direction, standing at right angles thereto, into a first surface of a wafer-like silicon substrate. The injection structures are lengthened into drilled holes in the depth direction of the silicon substrate in a first etching step. A second surface of the silicon substrate is then at least partly removed for rear-side opening of the drilled holes in a second etching step and in a third etching step, an etching medium acting anisotropically is poured alternately through the drilled holes from both surfaces of the silicon substrate, so that drilled holes arranged next to one another in the first substrate direction connect to form a column running in the first substrate direction.

    Device for controlling temperature of cooling water

    公开(公告)号:US10371469B2

    公开(公告)日:2019-08-06

    申请号:US15857055

    申请日:2017-12-28

    Abstract: A device for controlling the temperature of cooling water includes a three-way valve having a first inlet, a second inlet, and an outlet; a first feed pipe; a second feed pipe; and a return pipe for connecting between an outlet of the temperature-control target and an inlet of the cooling water supply unit. The device also includes a return-side bypass pipe for connecting between the return pipe and the second inlet of the three-way valve; a pump provided on the second feed pipe for circulating the cooling water between the three-way valve and the temperature-control target; and a temperature measuring unit for measuring a temperature of the cooling water flowing in the second feed pipe. In addition, the device includes a controller for controlling the three-way valve and the pump in accordance with a detection result of the temperature measuring unit.

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