摘要:
A photomask and method for detecting failures in a mask pattern file using a manufacturing rule are disclosed. The method includes calculating a manufacturing rule based on a design parameter associated with a manufacturing process and measuring a dimension of a non-linear feature in a mask pattern file. A rule violation is identified in the mask pattern file if the measured dimension is less than the calculated manufacturing rule.
摘要:
A system and method for generating a mask layout file to reduce power supply voltage fluctuations in an integrated circuit are disclosed. The method includes analyzing a pattern in a mask layout file to identify a region in the pattern to add one or more decoupling capacitors. Once the region is identified, a feature located in the identified region is moved based on a design rule from a first position to a second position in the mask layout file to create a space in the identified region. The decoupling capacitors are automatically placed in the space in the identified region.
摘要:
A method for fabricating a damage resistant photomask includes forming a photomask pattern on a substrate and forming a transparent, protective coating on the photomask pattern. The protective coating may be an electrical insulator (e.g., spin-on glass). In addition, an antireflective layer may be applied to the protective coating. A pellicle may also be attached over the protective coating. The protective coating may prevent electrostatic energy from forming on or arcing between features on the photomask pattern and damaging the features. The protective layer may also prevent the photomask pattern from being damaged by or reacting with other substances, such as cleaning solutions.
摘要:
A system and method for correcting design rule violations in a mask layout file are disclosed. The method includes comparing a feature dimension in a mask layout file with a design rule in a technology file. If the feature dimension is less than the design rule, a design rule violation is identified and automatically corrected in the mask layout file.
摘要:
A system, method and apparatus are described for improving critical dimension uniformity in baked substrates. The system, method and apparatus provide for varying the distance between a substrate to be baked and the surface of a hot plate such that an approximately uniform temperature is obtained in the substrate during baking. In one embodiment, the substrate is positioned on a hot plate having a recess generally centered on its top side. The differences in distance between the edges of the substrates contacting the hot plate and the distance between the center region of the substrate and the bottom of the recess enable a generally uniform temperature to be obtained in the substrate.
摘要:
A method and apparatus for coupling a pellicle to a photomask using a non-distorting mechanism are disclosed. A pellicle is coupled to a photomask with a non-distorting mechanism that is located on a pellicle frame opposite a thin film coupled to the pellicle frame. The non-distorting mechanism acts to reduce stress exerted on the photomask by the pellicle.
摘要:
A photomask for reducing power supply voltage fluctuations in an integrated circuit and integrated circuit manufactured by the same are disclosed. The photomask includes a substrate and a patterned layer formed on at least a portion of the substrate. The patterned layer may be formed using a mask pattern file created by analyzing a pattern in a mask layout file to identify a region in the pattern to add one or more decoupling capacitors. Once the region is identified, a feature located in the identified region is moved based on a design rule from a first position to a second position in the mask layout file to create a space in the identified region. The decoupling capacitors are placed in the space in the identified region.
摘要:
A photomask and method for eliminating design rule violations from the photomask are disclosed. A photomask includes a substrate and a patterned layer formed on at least a portion of the substrate. The patterned layer may be formed using a mask pattern file created by comparing a feature dimension in a mask layout file with a design rule in a technology file, identifying a design rule violation if the feature dimension is less than the design rule and automatically correcting the identified design rule violation in the mask layout file.
摘要:
A system, method and apparatus are described for improving critical dimension uniformity in baked substrates. The system, method and apparatus provide for varying the distance between a substrate to be baked and the surface of a hot plate such that an approximately uniform temperature is obtained in the substrate during baking. In one embodiment, the substrate is positioned on a hot plate having a recess generally centered on its top side. The differences in distance between the edges of the substrates contacting the hot plate and the distance between the center region of the substrate and the bottom of the recess enable a generally uniform temperature to be obtained in the substrate.
摘要:
A test wafer and method for investigating electrostatic discharge induced wafer defects are disclosed. The test wafer includes an electrostatic discharge (ESD) sensitive risk scale geometry, formed thereon. After exposure to a semiconductor manufacturing procedure, the test wafer may be analyzed by using the ESD risk scale geometry to identify and evaluate severity of any ESD effects associated with the semiconductor manufacturing procedure.