RADIOMETRY DEVICE
    2.
    发明申请
    RADIOMETRY DEVICE 审中-公开

    公开(公告)号:US20190049310A1

    公开(公告)日:2019-02-14

    申请号:US16076753

    申请日:2017-02-08

    摘要: The present invention separates radiation from an object by a polarization filter 3 into polarized light beams, causes one of the beams to enter a spectrum analyzer 7 through a first optical path, causes the other to enter the spectrum analyzer 7 through a second optical path, and measures the two-color ratio, while causes radiation of a blackbody 2 placed in a vacuum ultralow temperature thermostatic chamber 1 in a quasi-thermal equilibrium state at an ultralow temperature in vacuo to enter the polarization filter 3 through a third optical path, separates the radiation into polarized light beams, causes the beams to each enter the same optical paths as the respective optical paths for the radiation of the object, causes the beams to enter the spectrum analyzer 7, measures the two-color ratio, and accurately obtains the temperature of the object on the basis of these two two-color ratios.

    SEMICONDUCTOR DEVICE HAVING SOI SUBSTRATE
    3.
    发明申请

    公开(公告)号:US20180138232A1

    公开(公告)日:2018-05-17

    申请号:US15870503

    申请日:2018-01-12

    摘要: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.

    METHOD AND APPARATUS FOR SYNTHESIZING RADIOACTIVE TECHNETIUM-99M-CONTAINING SUBSTANCE
    5.
    发明申请
    METHOD AND APPARATUS FOR SYNTHESIZING RADIOACTIVE TECHNETIUM-99M-CONTAINING SUBSTANCE 审中-公开
    用于合成放射性技术含99M物质的方法和装置

    公开(公告)号:US20150380119A1

    公开(公告)日:2015-12-31

    申请号:US14752544

    申请日:2015-06-26

    发明人: Kanetada NAGAMINE

    IPC分类号: G21G1/10

    CPC分类号: G21G1/10 G21G2001/0042

    摘要: A method for synthesizing a radioactive technetium-99m-containing substance and a synthesizing device are provided. The method for synthesizing a radioactive technetium-99m-containing substance has a step for generating negative muons and a step for irradiating the negative muons onto a ruthenium sample. The ruthenium material preferably includes a metallic ruthenium and/or a ruthenium compound. Also, the ruthenium sample preferably has a plurality of superimposed ruthenium thin plates having a thickness of 4 mm or less.

    摘要翻译: 提供一种合成放射性锝-99m物质的方法和合成装置。 用于合成放射性锝-99m的物质的方法具有产生负μ子的步骤和用于将负μ子照射到钌样品上的步骤。 钌材料优选包含金属钌和/或钌化合物。 此外,钌样品优选具有多个厚度为4mm以下的叠层的钌薄板。

    COMPOSITE TARGET
    6.
    发明申请
    COMPOSITE TARGET 审中-公开
    复合材料目标

    公开(公告)号:US20130064338A1

    公开(公告)日:2013-03-14

    申请号:US13569587

    申请日:2012-08-08

    IPC分类号: H05H3/06

    CPC分类号: H05H6/00

    摘要: The present invention provides a target capable of reducing radioactivation of a member due to protons. The present invention uses a novel target configured by compositing a beryllium material or a lithium material and a carbon-series material for reducing the radioactivation of the member due to the protons.

    摘要翻译: 本发明提供能够降低由于质子引起的部件的放射活性的目标。 本发明使用通过合成铍材料或锂材料和碳系材料来构造的新型靶,以减少由于质子引起的部件的放射活性。

    Method of manufacturing superconducting radio-frequency acceleration cavity
    7.
    发明授权
    Method of manufacturing superconducting radio-frequency acceleration cavity 有权
    制造超导射频加速腔的方法

    公开(公告)号:US08324134B2

    公开(公告)日:2012-12-04

    申请号:US12737651

    申请日:2009-06-24

    IPC分类号: H01L39/24

    摘要: To provide a manufacturing method of a superconducting radio-frequency acceleration cavity used in a charged particle accelerator enabling the manufacturing with few waste amounts of the niobium material at low cost in a short time, the manufacturing method has each of the steps of (a) obtaining an ingot made from a disk-shaped niobium material, (b) slicing and cutting the niobium ingot into a plurality of niobium plates each with a predetermined thickness, by vibrating multiple wires back and forth while spraying fine floating abrasive grains with the niobium ingot supported, (c) removing the floating abrasive grains adhered to the sliced niobium plates, and (d) performing deep draw forming on the niobium plates and thereby obtaining a niobium cell of a desired shape.

    摘要翻译: 为了提供一种用于带电粒子加速器的超导射频加速腔的制造方法,其能够在短时间内以低成本制造少量的铌材料,所以制造方法具有以下步骤:(a) 获得由圆盘形铌材料制成的铸锭,(b)通过在铌锭中喷洒细的浮动磨料颗粒来回振动多根钢丝,将铌锭切割并切割成多个具有预定厚度的铌板 (c)除去附着在切片的铌板上的浮动磨粒,(d)在铌板上进行深冲压成形,得到所需形状的铌电池。

    Optical resonator system
    10.
    发明授权
    Optical resonator system 有权
    光谐振器系统

    公开(公告)号:US09564732B2

    公开(公告)日:2017-02-07

    申请号:US14779718

    申请日:2013-09-12

    摘要: It has been very difficult to accumulate strong laser in the conventional optical resonator, because firstly it has been very difficult to control a resonator length less than 1 Å in resonation position which is required for the laser amplification more than 1,000 times and secondly, the conventional method has utilized laser strength of amplified laser in the optical resonator as the resonance control signal.The present invention provides an optical resonator system to accumulate strong laser. In the system, unamplified modulation wave or harmonic which are derived from oscillation laser are selectively used to tune a resonator length of the optical resonator.

    摘要翻译: 本发明提供一种用于积聚强激光的光学谐振器系统。 在该系统中,选择性地使用从振荡激光器导出的未放大调制波或谐波来调谐光谐振器的谐振器长度。