HIGH FREQUENCY MODULE AND COMMUNICATION DEVICE

    公开(公告)号:US20240365465A1

    公开(公告)日:2024-10-31

    申请号:US18641621

    申请日:2024-04-22

    IPC分类号: H05K1/02

    摘要: A high frequency module includes a mounting board, a first electronic component, a second electronic component, and a shield member. The mounting board has a main surface. The first electronic component and the second electronic component are disposed on the main surface of the mounting board. The shield member is disposed on the main surface of the mounting board. The shield member is positioned between the first electronic component and the second electronic component, and is adjacent to the first electronic component and the second electronic component.

    ACOUSTIC WAVE DEVICE
    3.
    发明公开

    公开(公告)号:US20240364300A1

    公开(公告)日:2024-10-31

    申请号:US18769657

    申请日:2024-07-11

    IPC分类号: H03H9/02 H03H9/56

    摘要: An acoustic wave device includes a piezoelectric substrate including a support that includes a support substrate, and a piezoelectric layer located on the support, a functional electrode located on the piezoelectric layer and including at least one pair of electrode fingers, and a dielectric film located on the piezoelectric layer to cover the at least one pair of electrode fingers. An acoustic reflection portion is located at a position overlapping at least a portion of the functional electrode in plan view. Assuming a thickness of the piezoelectric layer is d and a center-to-center distance between the electrode fingers adjacent to each other is p, d/p is about 0.5 or less. Angles of corners θ1, θ2, θ3, and θ4 are such that at least one of θ1≠θ3 or θ2≠θ4 is satisfied.

    ACOUSTIC WAVE DEVICE AND FILTER DEVICE
    4.
    发明公开

    公开(公告)号:US20240364294A1

    公开(公告)日:2024-10-31

    申请号:US18771377

    申请日:2024-07-12

    发明人: Katsuya DAIMON

    IPC分类号: H03H9/02 H03H9/56

    摘要: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, and an IDT electrode on the piezoelectric layer and including busbars and electrode fingers. In plan view when viewed in a lamination direction of the support and the piezoelectric layer, an acoustic reflector overlaps at least a portion of the IDT electrode on the support. When a thickness of the piezoelectric layer is defined as d and a center-to-center distance between the electrode fingers adjacent to each other is defined as p, d/p is about 0.5 or smaller. Mass addition films are located over at least one of pair of edge regions and a gap region adjacent to the edge region and aligned in an electrode finger facing direction. The mass addition films are not located on at least a portion between the adjacent electrode fingers.

    METHOD FOR MANUFACTURING MULTILAYER CERAMIC ELECTRONIC COMPONENT, AND MULTILAYER CERAMIC ELECTRONIC COMPONENT

    公开(公告)号:US20240363289A1

    公开(公告)日:2024-10-31

    申请号:US18769737

    申请日:2024-07-11

    IPC分类号: H01G4/30 H01G4/012

    CPC分类号: H01G4/30 H01G4/012 Y10T29/435

    摘要: A method for manufacturing a multilayer ceramic electronic component includes preparing a ceramic green sheet, forming a plurality of internal electrode patterns on a main surface of the ceramic green sheet, applying a ceramic paste above the main surface of the ceramic green sheet, stacking a plurality of the ceramic green sheets, pressing the plurality of stacked ceramic green sheets, and cutting the plurality of pressed ceramic green sheets. The ceramic paste at least partially overlaps end portions of the internal electrode patterns, and a stepped region is provided on the ceramic green sheet. When cutting the ceramic green sheets in a first direction, the cutting is performed at a position of the stepped region between two of the internal electrode patterns adjacent to each other in a second direction.

    Multiplexer, radio-frequency module, and communication apparatus

    公开(公告)号:US12132504B2

    公开(公告)日:2024-10-29

    申请号:US17411240

    申请日:2021-08-25

    发明人: Hiroyuki Nagamori

    CPC分类号: H04B1/0057 H04B1/38 H04L5/14

    摘要: Attenuation on a receive path side in a pass band of a second filter is improved in a case where a first filter, which passes a receive signal, is an acoustic wave filter. A multiplexer includes a common terminal, a first terminal, a second terminal, a first filter, and a second filter. The first filter is an acoustic wave filter disposed on a receive path connecting the common terminal and the first terminal and passes a receive signal. The second filter is disposed on a transmit path connecting the common terminal and the second terminal and passes a transmit signal. The multiplexer further includes an LC filter. The LC filter is disposed on the receive path connecting the common terminal and the first terminal.

    CRYSTAL RESONATOR
    8.
    发明公开
    CRYSTAL RESONATOR 审中-公开

    公开(公告)号:US20240356528A1

    公开(公告)日:2024-10-24

    申请号:US18668512

    申请日:2024-05-20

    发明人: Toshio NISHIMURA

    IPC分类号: H03H9/25 H03H9/02 H03H9/145

    摘要: A crystal resonator is provided that includes a crystal substrate having first and second main surfaces; a first and second comb electrodes on the first main surface and that each include electrode fingers that are alternately arranged. The first comb electrode includes a first electrode finger and the second comb electrode includes a second electrode finger adjacent to the first electrode finger. Thickness shear vibration is excited at a portion overlapping with a gap between the first and second electrode fingers, depending on a potential difference between the first and second electrode fingers. A duty ratio (L1+L2 (/(2×P1) on a first main surface side is from 0.15 to 0.33 inclusive or from 0.62 to 0.82 inclusive where a width of the first electrode finger is denoted as L1, a width of the second electrode finger is and a distance between the first and second electrode fingers is P1.

    ACOUSTIC WAVE DEVICE
    9.
    发明公开

    公开(公告)号:US20240356523A1

    公开(公告)日:2024-10-24

    申请号:US18630004

    申请日:2024-04-09

    发明人: Kazuhiro TAKIGAWA

    IPC分类号: H03H9/145 H03H9/02 H03H9/25

    摘要: In an acoustic wave device, a region where first and second electrode fingers overlap each other is an intersection region including a central region and edge regions facing each other and interposing the central region in a first direction. Each of busbars in the IDT electrode includes reflector busbars in reflector cavities along the second direction. Va≠Vb when an acoustic velocity in the central region is Va and an acoustic velocity in a first cavity containing region is Vb, in a portion where the IDT electrode is provided. Vc≠Vd when an acoustic velocity in the extended central region is Vc and an acoustic velocity in third and fourth cavity containing regions is Vd, in a portion where each of the reflectors is provided. (Vb/Va)≠(Vd/Vc) in the portion where the IDT electrode is provided and in a portion where at least one reflector is provided.

    TRANSMISSION LINE
    10.
    发明公开
    TRANSMISSION LINE 审中-公开

    公开(公告)号:US20240356190A1

    公开(公告)日:2024-10-24

    申请号:US18763068

    申请日:2024-07-03

    发明人: Tomohiro NAGAI

    摘要: A transmission line includes a substrate, a high-frequency signal transmission line, a differential signal transmission line, and a power supply line. The substrate is insulating, extends in a predetermined direction, and internally includes each of the high-frequency signal transmission line, the differential signal transmission line, and the power supply line. The power supply line and the high-frequency signal transmission line are in parallel or substantially in parallel to each other, and the differential signal transmission line is between the power supply line and the high-frequency signal transmission line.