摘要:
An imaging device is disclosed, the device comprising a pixelated array of semiconductor detector elements, in which each detecting element is electrically connected to an integrated circuit, the integrated circuit comprising a passive signal path and an active signal path. The active path provides consecutive frame imaging and the active path detects the location of transient events. The device further comprising a readout decoder block, the readout decoder block controlling operation of the passive paths. Additionally the device comprises of an address arbitration control block, the address arbitration control block controlling operation of the active paths, wherein the address arbitration control block readout of the active paths is independent of readout of the passive paths.
摘要:
An epitaxial grown avalanche photodiode (APD), the avalanche photodiode comprising an anode, a cathode, an absorber, and a doped multiplier. The absorber and the doped multiplier are about between the cathode and the anode. The doped multiplier has a multiplier dopant concentration. The doped multiplier substantially depleted during operation of the epitaxial grown photodiode. The doped multiplier may comprise of a plurality of multiplication regions, each of the multiplication regions substantially depleted during operation of the avalanche photodiode.
摘要:
A laser system comprising an RE:XAB gain medium within a resonator cavity. X is selected from Ca, Lu, Yb, Nd, Sm, Eu, Gd, Ga, Tb, Dy, Ho, Er, and RE is selected from Lu, Y, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Pr, Tm, Cr, Ho. The system further comprises a pumping source having optical output directed towards the gain medium. A laser controller operates the pumping source. The system further comprises a heat spreader, the heat spreader in thermal communication with the gain medium through a surface wherein the pump source has optical output incident.
摘要:
A 3D stacked electro-optical radiation imaging device with a plurality of integrated circuit layers, the device having a pixelated array of semiconductor detector elements, in which each detecting element is electrically connected a stacked integrated circuit. The stacked integrated circuit has a mixed signal layer and a reconfigurable layer. The mixed signal layer has a passive signal path and an active signal path. A readout decoder block controls operation of the passive paths. The active signal path triggers readout upon transient event detection and is readout by an address arbitration control block, the address arbitration control block operating independent and asynchronous to the readout of the passive path and transient event detection initiates the identification of the location of and readout of the signaling active path. The reconfigurable layer has processing units that each correspond to one or more pixels in the pixelated array. The processing units are reconfigurable through received signals from either the passive path, the active path, or an external signal. A controller programs and communicates with the mixed signal layer and reconfigurable layer
摘要:
An imaging device is disclosed, the device comprising a pixelated array of semiconductor elements, in which each detecting element is electrically connected to an integrated circuit, the integrated circuit comprising a passive signal path and an active signal path. The passive path provides consecutive frame imaging and the active path detects the location of transient events. The device further comprising a readout decoder block, the readout decoder block controlling operation of the passive paths. Additionally, the device comprises of an address arbitration control block, the address arbitration control block controlling operation of the active paths, wherein the address arbitration control block readout of the active paths are independent of readout of the integrated signal readout from the passive paths.
摘要:
An optical upconverting nanomaterial includes a nanocrystal, a ligand layer directly bonded to the nanocrystal, and an optical antenna directly or indirectly bonded to the nanocrystal. The nanocrystal includes a transition metal-doped material exhibiting upconversion to optical wavelengths. The transition metal-doped material includes energy transfer facilitating transition metal dopants and (not necessarily distinct) emitter transition metal dopants, where an absorption spectrum of the energy transfer facilitating transition metal dopants overlaps with an emission spectrum of the optical antenna. The optical upconverting nanomaterial has at least one linear dimension (e.g., width or thickness) that is less than 150 nm in extent.
摘要:
A CMOS image sensor array has rows and columns of active pixels, and column lines in communication with the active pixels in the respective columns. Each active pixel has an output connected to a column line and includes a photodetector that produces a signal proportional to incident light intensity that is coupled to an active pixel output based on column select and row select signals. Each active pixel has a reset transistor for resetting the active pixel, wherein each reset transistor has a first gate terminal and a second gate terminal. The reset transistors have a variable threshold capability that allows increased sensor array dynamic range or mitigation of the effects of temperature or radiation induced transistor threshold voltage shifts. Row select, column select, and sense transistors can also be configured to have variable thresholds.
摘要:
This invention provides, in one aspect, a procedure to use optically transparent nanocrystalline quantum dots to absorb UV light. This absorption process leads to an energy transfer to a chemically bound and chelated lanthanide ion that may emit light in either the visible spectrum (400-700 nm) or in the near infrared (700-1600 nm). This invention also provides methods for the use of these taggant materials in inks and aerosols used to disperse the taggant.
摘要:
A method of detecting an optical signal, comprising the steps of: providing an avalanche photodiode (APD) comprising a multiplication region capable of amplifying an electric current, said multiplication region, in operation, having a first ionization rate for electrons and a second ionization rate for holes, wherein said first ionization rate is different in magnitude from said second ionization rate, and exposure to the optical signal causes an impulse response; exposing the APD to a modulating optical signal; providing an external circuit that induces an APD bias to the multiplication region; providing an external circuit for amplifying and processing an electric signal from the avalanche photodiode; and modulating the APD bias in a manner that is correlated with the optical signal.
摘要:
An imaging device in accordance with the present disclosure comprises of a pixelated array of semiconductor detector elements, each of the pixels in the array having an in-pixel integrated circuit, the integrated circuit having a comparator, a readout decoder block, and an address arbitration control block. The readout decoder block reads out the integrated signals of the pixels. The address arbitration control block determines the pixel address of the pixels charging beyond a threshold voltage, the threshold exceedance determined by the comparator. The addressed pixels are provided a timestamp for each of the pixels integrating beyond the threshold voltage, the timestamp provided by an off-pixel time-to-digital converter (TDC), the value of the timestamp corresponding with the accumulated charge of the pixel.