公开(公告)号：US20110317472A1

公开(公告)日：2011-12-29

申请号：US13165941

申请日：2011-06-22

申请人： Nobuyoshi AWAYA ,  Yukio TAMAI ,  Akihito SAWA

发明人： Nobuyoshi AWAYA ,  Yukio TAMAI ,  Akihito SAWA

IPC分类号： G11C11/00 ,  H01L45/00

CPC分类号： H01L27/249 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/51 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1641 ,  H01L45/1675

摘要： A memory cell array having a 1R structure is composed of nonvolatile variable resistive elements each including a variable resistor formed of a metal oxide film whose resistance changes depending on an oxygen concentration in the film, and first and second electrodes sandwiching the variable resistor. The first electrode and the variable resistor form a rectifier junction through a rectifier junction layer composed of an oxide layer and a layer (oxygen depletion layer) of the metal oxide film having an oxygen concentration lower than a stoichiometric composition. The oxygen moves between the first electrode and the metal oxide film when a voltage is applied, and a thickness of the oxygen depletion layer changes, so that the resistance of the metal oxide film changes and the rectifying properties are provided. A thickness of the oxygen depletion layer is set to allow the variable resistive element to show the sufficient rectifying properties.

摘要翻译： 具有1R结构的存储单元阵列由非易失性可变电阻元件组成，每个非易失性可变电阻元件包括由电阻根据膜中的氧浓度而变化的金属氧化物膜形成的可变电阻器，以及夹持可变电阻器的第一和第二电极。 第一电极和可变电阻器通过由氧化物层和氧（氧）浓度低于化学计量组成的金属氧化物膜的层（氧耗尽层）组成的整流器结层形成整流器结。 当施加电压时，氧在第一电极和金属氧化物膜之间移动，并且氧耗尽层的厚度改变，使得金属氧化物膜的电阻改变并且提供整流性能。 氧耗尽层的厚度被设定为允许可变电阻元件显示足够的矫正特性。

公开(公告)号：US07539040B2

公开(公告)日：2009-05-26

申请号：US11878039

申请日：2007-07-20

申请人： Yukio Tamai ,  Akihito Sawa

发明人： Yukio Tamai ,  Akihito Sawa

IPC分类号： G11C11/00

CPC分类号： G11C8/10 ,  G11C11/16 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/31 ,  G11C2213/72

摘要： A nonvolatile semiconductor memory device comprises a memory cell including a variable resistance element changing its electric resistance by voltage application and having current-voltage characteristics in which a positive bias current flowing when a positive voltage is applied from one electrode as a reference electrode to the other electrode through an incorporated rectifier junction is larger than a negative bias current, a memory cell selection circuit for selecting the memory cell from the memory cell array, a voltage supply circuit for supplying a voltage to the memory cell so that a predetermined positive voltage corresponding to the reading operation is applied to the other electrode of the variable resistance element, in the reading operation, and a readout circuit for detecting the amount of the positive bias current and reading the information stored in the selected memory cell, in order to suppress the reading disturbance of the memory cell.

摘要翻译： 非易失性半导体存储器件包括存储单元，该存储单元包括通过施加电压而改变其电阻的可变电阻元件，并且具有电流 - 电压特性，其中当从作为参考电极的一个电极施加正电压时流入的正偏流 通过并入的整流器结的电极大于负偏置电流，用于从存储单元阵列选择存储单元的存储单元选择电路，用于向存储单元提供电压的电压供应电路，使得对应于 在读取操作中读取操作被应用于可变电阻元件的另一个电极，以及用于检测正偏置电流量并读取存储在所选存储单元中的信息的读出电路，以便抑制读取 存储单元的干扰。

公开(公告)号：US20090065757A1

公开(公告)日：2009-03-12

申请号：US11886734

申请日：2006-03-23

申请人： Akihito Sawa ,  Takeshi Fujii ,  Masashi Kawasaki ,  Yoshinori Tokura

发明人： Akihito Sawa ,  Takeshi Fujii ,  Masashi Kawasaki ,  Yoshinori Tokura

IPC分类号： H01L45/00

CPC分类号： G11C13/0007 ,  G11C2213/31 ,  G11C2213/56 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/1625

摘要： A nonvolatile memory element in which Rb1-yMbyMnO3 having higher insulation properties than Ra1-xMaxMnO3 is inserted between the Ra1-xMaxMnO3 and a metal having a shallow work function or a low electronegativity in order to improve resistance change properties and switching properties and to control the resistance change properties. (In the formulas, Ra and Rb represent rare earth elements and are solid solutions of one or more types of rare earth elements. Average ionic radius of the Rb is smaller than that of the Ra. Ma and Mb represent alkaline earth metals and are solid solutions of one or more types of alkaline earth metals. 0

摘要翻译： 在Ra1-xMaxMnO3与具有浅功函数或低电负性的金属之间插入具有比Ra1-xMaxMnO3更高绝缘性的Rb1-yMbyMnO3的非易失性存储元件，以改善电阻变化特性和开关特性，并控制 电阻变化特性。 （式中，Ra和Rb表示稀土元素，是一种以上稀土元素的固溶体，Rb的平均离子半径小于Ra，Ma，Mb表示碱土金属，为固体 一种或多种碱土金属的溶液，0

公开(公告)号：US20090050868A1

公开(公告)日：2009-02-26

申请号：US11886776

申请日：2006-03-23

申请人： Akihito Sawa ,  Takeshi Fujii ,  Masashi Kawasaki ,  Yoshinori Tokura

发明人： Akihito Sawa ,  Takeshi Fujii ,  Masashi Kawasaki ,  Yoshinori Tokura

IPC分类号： H01L47/00

CPC分类号： G11C13/0007 ,  G11C2213/31 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/1625

摘要： Provided is a material composition which allows a nonvolatile memory element made of a perovskite-type transition metal oxide having the CER effect to be formed of three elements, which comprises an electric conductor having a shallow work function or a small electronegativity, such as Ti, as an electrode and a rare earth-copper oxide comprising one type of rare earth element, copper and oxygen, such as La2CuO4, as a material constituting a heterojunction with the electric conductor.

摘要翻译： 提供一种材料组合物，其允许由具有CER效应的钙钛矿型过渡金属氧化物制成的非易失性存储元件由三种元素形成，该三种元素包括具有浅功函数或小电负性的导电体，例如Ti， 作为包含一种类型的稀土元素的铜和氧，例如La2CuO4的电极和稀土 - 氧化铜，作为构成与导电体的异质结的材料。

公开(公告)号：US20080025072A1

公开(公告)日：2008-01-31

申请号：US11878039

申请日：2007-07-20

申请人： Yukio Tamai ,  Akihito Sawa

发明人： Yukio Tamai ,  Akihito Sawa

IPC分类号： G11C11/00

CPC分类号： G11C8/10 ,  G11C11/16 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/31 ,  G11C2213/72

摘要： A nonvolatile semiconductor memory device comprises a memory cell including a variable resistance element changing its electric resistance by voltage application and having current-voltage characteristics in which a positive bias current flowing when a positive voltage is applied from one electrode as a reference electrode to the other electrode through an incorporated rectifier junction is larger than a negative bias current, a memory cell selection circuit for selecting the memory cell from the memory cell array, a voltage supply circuit for supplying a voltage to the memory cell so that a predetermined positive voltage corresponding to the reading operation is applied to the other electrode of the variable resistance element, in the reading operation, and a readout circuit for detecting the amount of the positive bias current and reading the information stored in the selected memory cell, in order to suppress the reading disturbance of the memory cell.

摘要翻译： 非易失性半导体存储器件包括存储单元，该存储单元包括通过施加电压而改变其电阻的可变电阻元件，并且具有电流 - 电压特性，其中当从作为参考电极的一个电极施加正电压时流入的正偏流 通过并入的整流器结的电极大于负偏置电流，用于从存储单元阵列选择存储单元的存储单元选择电路，用于向存储单元提供电压的电压供应电路，使得对应于 在读取操作中读取操作被应用于可变电阻元件的另一个电极，以及用于检测正偏置电流量并读取存储在所选存储单元中的信息的读出电路，以便抑制读取 存储单元的干扰。

公开(公告)号：US07580276B2

公开(公告)日：2009-08-25

申请号：US11886734

申请日：2006-03-23

申请人： Akihito Sawa ,  Takeshi Fujii ,  Masashi Kawasaki ,  Yoshinori Tokura

发明人： Akihito Sawa ,  Takeshi Fujii ,  Masashi Kawasaki ,  Yoshinori Tokura

IPC分类号： G11C11/00 ,  H01L45/00

CPC分类号： G11C13/0007 ,  G11C2213/31 ,  G11C2213/56 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/1625

摘要： A nonvolatile memory element in which Rb1-yMbyMnO3 having higher insulation properties than Ra1-xMaxMnO3 is inserted between the Ra1-xMaxMnO3 and a metal having a shallow work function or a low electronegativity in order to improve resistance change properties and switching properties and to control the resistance change properties. (In the formulas, Ra and Rb represent rare earth elements and are solid solutions of one or more types of rare earth elements. Average ionic radius of the Rb is smaller than that of the Ra. Ma and Mb represent alkaline earth metals and are solid solutions of one or more types of alkaline earth metals. 0

摘要翻译： 在Ra1-xMaxMnO3与具有浅功函数或低电负性的金属之间插入具有比Ra1-xMaxMnO3更高绝缘性的Rb1-yMbyMnO3的非易失性存储元件，以改善电阻变化特性和开关特性，并控制 电阻变化特性。 （式中，Ra和Rb表示稀土元素，是一种以上稀土元素的固溶体，Rb的平均离子半径小于Ra，Ma，Mb表示碱土金属，为固体 一种或多种碱土金属的溶液，0

公开(公告)号：US08445881B2

公开(公告)日：2013-05-21

申请号：US13093171

申请日：2011-04-25

申请人： Nobuyoshi Awaya ,  Yukio Tamai ,  Akihito Sawa

发明人： Nobuyoshi Awaya ,  Yukio Tamai ,  Akihito Sawa

IPC分类号： H01L29/02

CPC分类号： G11C13/0007 ,  G11C2213/53 ,  G11C2213/75 ,  H01L27/101 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/147

摘要： A large-capacity and inexpensive nonvolatile semiconductor memory device that prevents a leak current and is operated at high speed is implemented with a nonvolatile variable resistive element. A memory cell array includes the nonvolatile variable resistive elements each including a variable resistor composed of a metal oxide film to cause a resistance change according to an oxygen concentration in the film, an insulation film formed on the variable resistor, first and second electrodes to sandwich the variable resistor, and a third electrode opposite to the variable resistor across the insulation film. A writing operation is performed by applying a voltage to the third electrode to induce an electric field having a threshold value or more, in a direction perpendicular to an interface between the variable resistor and the insulation film, and a resistance state of the variable resistor is read by applying a voltage between the first and second electrodes.

摘要翻译： 利用非易失性可变电阻元件来实现防止漏电流并且高速运行的大容量且廉价的非易失性半导体存储器件。 存储单元阵列包括易失性可变电阻元件，每个可变电阻元件包括由金属氧化物膜构成的可变电阻器，以根据膜中的氧浓度引起电阻变化，形成在可变电阻器上的绝缘膜，第一和第二电极夹持 可变电阻器和与绝缘膜上的可变电阻器相对的第三电极。 通过向第三电极施加电压以在垂直于可变电阻器和绝缘膜之间的界面的方向上诱导具有阈值或更大的电场的电场来执行写入操作，并且可变电阻器的电阻状态是 通过在第一和第二电极之间施加电压来读取。

公开(公告)号：US08432720B2

公开(公告)日：2013-04-30

申请号：US13165941

申请日：2011-06-22

申请人： Nobuyoshi Awaya ,  Yukio Tamai ,  Akihito Sawa

发明人： Nobuyoshi Awaya ,  Yukio Tamai ,  Akihito Sawa

IPC分类号： G11C11/00

CPC分类号： H01L27/249 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/51 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1641 ,  H01L45/1675

摘要： A memory cell array having a 1R structure is composed of nonvolatile variable resistive elements each including a variable resistor formed of a metal oxide film whose resistance changes depending on an oxygen concentration in the film, and first and second electrodes sandwiching the variable resistor. The first electrode and the variable resistor form a rectifier junction through a rectifier junction layer composed of an oxide layer and a layer (oxygen depletion layer) of the metal oxide film having an oxygen concentration lower than a stoichiometric composition. The oxygen moves between the first electrode and the metal oxide film when a voltage is applied, and a thickness of the oxygen depletion layer changes, so that the resistance of the metal oxide film changes and the rectifying properties are provided. A thickness of the oxygen depletion layer is set to allow the variable resistive element to show the sufficient rectifying properties.

摘要翻译： 具有1R结构的存储单元阵列由非易失性可变电阻元件组成，每个非易失性可变电阻元件包括由电阻根据膜中的氧浓度而变化的金属氧化物膜形成的可变电阻器和夹持可变电阻器的第一和第二电极。 第一电极和可变电阻器通过由氧化物层和氧（氧）浓度低于化学计量组成的金属氧化物膜的层（氧耗尽层）组成的整流器结层形成整流器结。 当施加电压时，氧在第一电极和金属氧化物膜之间移动，并且氧耗尽层的厚度改变，使得金属氧化物膜的电阻改变并且提供整流性能。 氧耗尽层的厚度被设定为允许可变电阻元件显示足够的矫正特性。

公开(公告)号：US20120268980A1

公开(公告)日：2012-10-25

申请号：US13093171

申请日：2011-04-25

申请人： Nobuyoshi Awaya ,  Yukio Tamai ,  Akihito Sawa

发明人： Nobuyoshi Awaya ,  Yukio Tamai ,  Akihito Sawa

IPC分类号： G11C11/00 ,  H01L45/00

CPC分类号： G11C13/0007 ,  G11C2213/53 ,  G11C2213/75 ,  H01L27/101 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/147

摘要： A large-capacity and inexpensive nonvolatile semiconductor memory device that prevents a leak current and is operated at high speed is implemented with a nonvolatile variable resistive element. A memory cell array includes the nonvolatile variable resistive elements each including a variable resistor composed of a metal oxide film to cause a resistance change according to an oxygen concentration in the film, an insulation film formed on the variable resistor, first and second electrodes to sandwich the variable resistor, and a third electrode opposite to the variable resistor across the insulation film. A writing operation is performed by applying a voltage to the third electrode to induce an electric field having a threshold value or more, in a direction perpendicular to an interface between the variable resistor and the insulation film, and a resistance state of the variable resistor is read by applying a voltage between the first and second electrodes.

摘要翻译： 利用非易失性可变电阻元件来实现防止漏电流并且高速运行的大容量且廉价的非易失性半导体存储器件。 存储单元阵列包括易失性可变电阻元件，每个可变电阻元件包括由金属氧化物膜构成的可变电阻器，以根据膜中的氧浓度引起电阻变化，形成在可变电阻器上的绝缘膜，第一和第二电极夹持 可变电阻器和与绝缘膜上的可变电阻器相对的第三电极。 通过向第三电极施加电压以在垂直于可变电阻器和绝缘膜之间的界面的方向上诱导具有阈值或更大的电场的电场来执行写入操作，并且可变电阻器的电阻状态是 通过在第一和第二电极之间施加电压来读取。

公开(公告)号：US07932505B2

公开(公告)日：2011-04-26

申请号：US11886776

申请日：2006-03-23

申请人： Akihito Sawa ,  Takeshi Fujii ,  Masashi Kawasaki ,  Yoshinori Tokura

发明人： Akihito Sawa ,  Takeshi Fujii ,  Masashi Kawasaki ,  Yoshinori Tokura

IPC分类号： H01L45/00

CPC分类号： G11C13/0007 ,  G11C2213/31 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/1625

摘要： Provided is a material composition which allows a nonvolatile memory element made of a perovskite-type transition metal oxide having the CER effect to be formed of three elements, which comprises an electric conductor having a shallow work function or a small electronegativity, such as Ti, as an electrode and a rare earth-copper oxide comprising one type of rare earth element, copper and oxygen, such as La2CuO4, as a material constituting a heterojunction with the electric conductor.

摘要翻译： 提供一种材料组合物，其允许由具有CER效应的钙钛矿型过渡金属氧化物制成的非易失性存储元件由三种元素形成，该三种元素包括具有浅功函数或小电负性的导电体，例如Ti， 作为包含一种类型的稀土元素的铜和氧，例如La2CuO4的电极和稀土 - 氧化铜，作为构成与导电体的异质结的材料。