公开(公告)号：US09899616B2

公开(公告)日：2018-02-20

申请号：US14390692

申请日：2012-06-19

申请人： Bjoern Luessem ,  Alexander Zakhidov ,  Hans Kleeman ,  Karl Leo

发明人： Bjoern Luessem ,  Alexander Zakhidov ,  Hans Kleeman ,  Karl Leo

IPC分类号： H01L29/08 ,  H01L51/05 ,  B82Y10/00 ,  H01L51/00 ,  H01L51/10

CPC分类号： H01L51/0562 ,  B82Y10/00 ,  H01L51/0002 ,  H01L51/001 ,  H01L51/002 ,  H01L51/0021 ,  H01L51/0046 ,  H01L51/0059 ,  H01L51/102 ,  H01L51/105

摘要： The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.

公开(公告)号：US20150270503A1

公开(公告)日：2015-09-24

申请号：US14390692

申请日：2012-06-19

申请人： Bjoern Luessem ,  Alexander Zakhidov ,  Hans Kleemann ,  Karl Leo

发明人： Bjoern Luessem ,  Alexander Zakhidov ,  Hans Kleemann ,  Karl Leo

IPC分类号： H01L51/05 ,  H01L51/10 ,  H01L51/00

CPC分类号： H01L51/0562 ,  B82Y10/00 ,  H01L51/0002 ,  H01L51/001 ,  H01L51/002 ,  H01L51/0021 ,  H01L51/0046 ,  H01L51/0059 ,  H01L51/102 ,  H01L51/105

摘要： The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.

摘要翻译： 本公开涉及有机场效应晶体管，以及制造有机场效应晶体管的方法。 有机场效应晶体管可以包括第一电极和第二电极，电极提供源电极和漏电极，与第一和第二电极电接触的本征有机半导体层，栅电极，提供的栅极绝缘体 在栅电极和本征有机半导体层之间，以及包括有机基质材料和有机掺杂剂的掺杂有机半导体层。

公开(公告)号：US20120235122A1

公开(公告)日：2012-09-20

申请号：US13275963

申请日：2011-10-18

申请人： Philipp Sebastian ,  Bjoern Luessem ,  Karl Leo

发明人： Philipp Sebastian ,  Bjoern Luessem ,  Karl Leo

IPC分类号： H01L51/30 ,  B82Y30/00

CPC分类号： H01L51/0591 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/0077 ,  H01L51/0081 ,  H01L2251/308 ,  Y10S977/943

摘要： The invention relates to an organic memory with an electrode and a counter-electrode, comprising at least one oxide layer, an electrically undoped organic layer and an electrically doped organic layer between the electrode and the counter-electrode, wherein the oxide layer is adjacent to the electrode and the undoped organic layer.

摘要翻译： 本发明涉及一种具有电极和对电极的有机存储器，包括在电极和对电极之间的至少一个氧化物层，电未掺杂的有机层和电掺杂的有机层，其中氧化物层与 电极和未掺杂的有机层。

公开(公告)号：US09006712B2

公开(公告)日：2015-04-14

申请号：US13275963

申请日：2011-10-18

申请人： Philipp Sebastian ,  Bjoern Luessem ,  Karl Leo

发明人： Philipp Sebastian ,  Bjoern Luessem ,  Karl Leo

IPC分类号： H01L51/30 ,  B82Y30/00 ,  H01L51/05 ,  B82Y10/00 ,  H01L51/00

CPC分类号： H01L51/0591 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/0077 ,  H01L51/0081 ,  H01L2251/308 ,  Y10S977/943

摘要： The invention relates to an organic memory with an electrode and a counter-electrode, comprising at least one oxide layer, an electrically undoped organic layer and an electrically doped organic layer between the electrode and the counter-electrode, wherein the oxide layer is adjacent to the electrode and the undoped organic layer.

摘要翻译： 本发明涉及一种具有电极和对电极的有机存储器，包括在电极和对电极之间的至少一个氧化物层，电未掺杂的有机层和电掺杂的有机层，其中氧化物层与 电极和未掺杂的有机层。

公开(公告)号：US20120075013A1

公开(公告)日：2012-03-29

申请号：US13257459

申请日：2010-03-19

申请人： Karl Leo ,  Kentaro Harada ,  Frank Lindner ,  Bjoern Luessem

发明人： Karl Leo ,  Kentaro Harada ,  Frank Lindner ,  Bjoern Luessem

IPC分类号： H01L29/866 ,  H01L51/10

CPC分类号： H01L51/0583 ,  H01L29/866 ,  H01L51/002 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/4293 ,  H01L2251/308

摘要： This disclosure relates to an organic zener diode having one electrode and one counter electrode, and an organic layer arrangement formed between the electrode and the counter electrode, wherein the organic layer arrangement includes the following organic layers: an electrically n-doped charge carrier injection layer on the electrode side, made from a mixture of an organic matrix material and an n-dopant, an electrically p-doped charge carrier injection layer on the counter electrode side, made from a mixture of another organic matrix material and a p-dopant, and an electrically undoped organic intermediate layer that is arranged between the electrically n-doped charge carrier injection layer on the electrode side and the electrically p-doped charge carrier injection layer on the counter electrode side. An electronic circuit arrangement with an organic zener diode and method for operating an organic zener diode are also provided.

摘要翻译： 本公开涉及具有一个电极和一个对电极的有机齐纳二极管和形成在电极和对电极之间的有机层布置，其中有机层布置包括以下有机层：电n掺杂的载流子注入层 在电极侧由有机基质材料和n-掺杂剂的混合物构成，由相对电极侧的电p掺杂的载流子注入层由另一种有机基质材料和p-掺杂剂的混合物制成， 以及布置在电极侧的电n掺杂电荷载流子注入层和对电极侧的电p掺杂电荷载流子注入层之间的未掺杂有机中间层。 还提供了具有有机齐纳二极管的电子电路装置和用于操作有机齐纳二极管的方法。

公开(公告)号：US20110127487A1

公开(公告)日：2011-06-02

申请号：US13056508

申请日：2009-07-31

申请人： Rene Wirtz ,  Silvia Rosselli ,  Gabriele Nelles ,  Bjoern Luessem

发明人： Rene Wirtz ,  Silvia Rosselli ,  Gabriele Nelles ,  Bjoern Luessem

IPC分类号： H01L27/24 ,  H01L29/772 ,  H01L21/02

CPC分类号： H01L51/0591 ,  G11C13/0007 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/003 ,  G11C2213/32 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/283 ,  H01L27/285 ,  H03K19/17784 ,  H03K19/17792

摘要： The invention relates to an electronic device, comprising a field effect transistor and a resistive switch electrically coupled with each other, wherein the resistive switch is configured to be switched between a state of low resistance and a state of high resistance.

摘要翻译： 本发明涉及一种电子设备，包括电场耦合的场效应晶体管和电阻式开关，其中电阻开关被配置为在低电阻状态和高电阻状态之间切换。

公开(公告)号：US08431918B2

公开(公告)日：2013-04-30

申请号：US13056508

申请日：2009-07-31

申请人： Rene Wirtz ,  Silvia Rosselli ,  Gabriele Nelles ,  Bjoern Luessem

发明人： Rene Wirtz ,  Silvia Rosselli ,  Gabriele Nelles ,  Bjoern Luessem

IPC分类号： H01L29/02

CPC分类号： H01L51/0591 ,  G11C13/0007 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/003 ,  G11C2213/32 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/283 ,  H01L27/285 ,  H03K19/17784 ,  H03K19/17792

摘要： The invention relates to an electronic device, comprising a field effect transistor and a resistive switch electrically coupled with each other, wherein the resistive switch is configured to be switched between a state of low resistance and a state of high resistance.

摘要翻译： 本发明涉及一种电子设备，其包括电场耦合的场效应晶体管和电阻式开关，其中所述电阻开关被配置为在低电阻状态和高电阻状态之间切换。

公开(公告)号：US07824734B2

公开(公告)日：2010-11-02

申请号：US12036688

申请日：2008-02-25

申请人： Jurina Wessels ,  Bjoern Luessem ,  Akio Yasuda ,  Daniel Schwaab ,  Dirk Mayer ,  Andreas Offenhaeusser ,  Sandra Gilles

发明人： Jurina Wessels ,  Bjoern Luessem ,  Akio Yasuda ,  Daniel Schwaab ,  Dirk Mayer ,  Andreas Offenhaeusser ,  Sandra Gilles

IPC分类号： B05D1/36

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  Y10T428/24917

摘要： A method and associated substrate is provided for applying a layer or pattern of metal on a substrate. The method includes providing a target substrate, immobilizing a layer of polymeric material on the target substrate, and applying and immobilizing a layer or pattern of metal on the layer of polymeric material on the target substrate using a stamp onto which the layer or pattern of metal has previously been applied, by bringing the stamp into conformal contact with the target substrate.

摘要翻译： 提供了一种方法和相关联的衬底，用于在衬底上施加金属层或图案。 该方法包括提供目标基底，将聚合物材料层固定在目标基底上，以及使用印模将金属的层或图案施加并固定在目标基底上的聚合物材料层上，金属层或金属图案 已经通过使印模与目标基板保形接触来应用。

公开(公告)号：US08691392B2

公开(公告)日：2014-04-08

申请号：US12988093

申请日：2009-04-22

申请人： Jurina Wessels ,  Florian Von Wrochem ,  Bjoern Luessem ,  Deqing Gao ,  Heinz-Georg Nothofer ,  William E. Ford

发明人： Jurina Wessels ,  Florian Von Wrochem ,  Bjoern Luessem ,  Deqing Gao ,  Heinz-Georg Nothofer ,  William E. Ford

IPC分类号： H01L29/40 ,  H01L21/04

CPC分类号： H01L27/285 ,  B82Y10/00 ,  H01L51/0024 ,  H01L51/0075 ,  H01L51/0595 ,  Y10T428/31678

摘要： The present invention relates to asymmetric molecular bilayers for the use in the junctions of electronic devices, such as crossbar junctions, comprising the general structure ET-MT( )MB-EB, wherein ET and EB denote a top and a bottom electrode, MT and MB represent functional molecules both forming a self-assembled monolayer (SAM) on said top or bottom electrode, and the symbol ( ) denotes a non-covalent interaction between the two monolayers, resulting in a molecular bilayer, sandwiched between the two electrodes. The electrodes are solid state electrodes and stationary with respect to each other. The present invention also relates to a method of producing such assemblies.

摘要翻译： 本发明涉及用于电子器件（例如交叉连接）的接合中的不对称分子双层，其包含通用结构ET-MT（）MB-EB，其中ET和EB表示顶部和底部电极，MT和 MB表示在所述顶部或底部电极上形成自组装单层（SAM）的功能分子，符号（）表示两个单层之间的非共价相互作用，导致夹在两个电极之间的分子双层。 电极是固态电极并且相对于彼此固定。 本发明还涉及制造这种组件的方法。

公开(公告)号：US20110108793A1

公开(公告)日：2011-05-12

申请号：US12988093

申请日：2009-04-22

申请人： Jurina Wessels ,  Florian Von Wrochem ,  Bjoern Luessem ,  Deqing Gao ,  Heinz-Georg Nothofer ,  William E. Ford

发明人： Jurina Wessels ,  Florian Von Wrochem ,  Bjoern Luessem ,  Deqing Gao ,  Heinz-Georg Nothofer ,  William E. Ford

IPC分类号： H01L29/40 ,  H01L21/04

CPC分类号： H01L27/285 ,  B82Y10/00 ,  H01L51/0024 ,  H01L51/0075 ,  H01L51/0595 ,  Y10T428/31678

摘要： The present invention relates to asymmetric molecular bilayers for the use in the junctions of electronic devices, such as crossbar junctions, comprising the general structure ET-MT( )MB-EB, wherein ET and EB denote a top and a bottom electrode, MT and MB represent functional molecules both forming a self-assembled monolayer (SAM) on said top or bottom electrode, and the symbol ( ) denotes a non-covalent interaction between the two monolayers, resulting in a molecular bilayer, sandwiched between the two electrodes. The electrodes are solid state electrodes and stationary with respect to each other. The present invention also relates to a method of producing such assemblies.

摘要翻译： 本发明涉及用于电子器件（例如交叉连接）的接合中的不对称分子双层，其包含通用结构ET-MT（）MB-EB，其中ET和EB表示顶部和底部电极，MT和 MB表示在所述顶部或底部电极上形成自组装单层（SAM）的功能分子，符号（）表示两个单层之间的非共价相互作用，导致夹在两个电极之间的分子双层。 电极是固态电极并且相对于彼此固定。 本发明还涉及制造这种组件的方法。