公开(公告)号：US20130316518A1

公开(公告)日：2013-11-28

申请号：US13478999

申请日：2012-05-23

申请人： Alice HOLLISTER ,  Sirish REDDY ,  Keith FOX ,  Mandyam SRIRAM ,  Joe WOMACK

发明人： Alice HOLLISTER ,  Sirish REDDY ,  Keith FOX ,  Mandyam SRIRAM ,  Joe WOMACK

IPC分类号： H01L21/20

CPC分类号： H01L21/0245 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/0332 ,  H01L21/0337 ,  H01L27/11556 ,  H01L27/11582

摘要： Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 Å, such as less than about 5 Å as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained.

公开(公告)号：US20120258261A1

公开(公告)日：2012-10-11

申请号：US13443668

申请日：2012-04-10

申请人： Sirish Reddy ,  Alice Hollister ,  Pramod Subramonium ,  Jon Henri ,  Chunhai Ji ,  Zhi Yuan Fang

发明人： Sirish Reddy ,  Alice Hollister ,  Pramod Subramonium ,  Jon Henri ,  Chunhai Ji ,  Zhi Yuan Fang

IPC分类号： B29B13/08

CPC分类号： H01L21/0332 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/31122 ,  H01L21/31144

摘要： A method for depositing a film includes arranging a substrate in a plasma enhanced chemical vapor deposition chamber. A first ashable hardmask (AHM) layer that is carbon-based is deposited on the substrate. During the depositing of the first AHM layer, doping is performed with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide. An atomic percentage of the at least one dopant is greater than or equal to 5% of the first AHM layer.

摘要翻译： 一种用于沉积膜的方法包括在等离子体增强化学气相沉积室中布置基板。 基于碳基的第一可灰化硬掩模（AHM）层被沉积在基底上。 在沉积第一AHM层期间，用至少一种选自硅，硅烷，硼，氮，锗，碳，氨和二氧化碳的掺杂剂进行掺杂。 至少一种掺杂剂的原子百分比大于或等于第一AHM层的5％。

公开(公告)号：US09117668B2

公开(公告)日：2015-08-25

申请号：US13478999

申请日：2012-05-23

申请人： Alice Hollister ,  Sirish Reddy ,  Keith Fox ,  Mandyam Sriram ,  Joe Womack

发明人： Alice Hollister ,  Sirish Reddy ,  Keith Fox ,  Mandyam Sriram ,  Joe Womack

IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L27/115

CPC分类号： H01L21/0245 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/0332 ,  H01L21/0337 ,  H01L27/11556 ,  H01L27/11582

摘要： Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 Å, such as less than about 5 Å as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained.

摘要翻译： 通过等离子体增强化学气相沉积（PECVD），使用包含含硅前体（例如硅烷），氩气和第二气体如氦气的工艺气体沉积具有低压缩应力和平滑拉伸硅膜的平滑硅膜， 氢或氦和氢的组合。 通过向工艺气体中加入掺杂剂源或含锗前体源可以获得掺杂的平滑硅膜和平滑硅锗膜。 在一些实施例中，在沉积期间使用包括高频（HF）和低频（LF）分量的双频等离子体等离子体，导致改善的膜粗糙度。 膜的特征在于通过原子力显微镜（AFM）测量的小于约等于小于约5埃的粗糙度（Ra）和绝对值小于约500MPa的压缩应力。 在一些实施方案中，获得平滑的拉伸硅膜。