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公开(公告)号:US09117668B2
公开(公告)日:2015-08-25
申请号:US13478999
申请日:2012-05-23
申请人: Alice Hollister , Sirish Reddy , Keith Fox , Mandyam Sriram , Joe Womack
发明人: Alice Hollister , Sirish Reddy , Keith Fox , Mandyam Sriram , Joe Womack
IPC分类号: H01L21/20 , H01L21/02 , H01L27/115
CPC分类号: H01L21/0245 , H01L21/02488 , H01L21/02507 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L21/0332 , H01L21/0337 , H01L27/11556 , H01L27/11582
摘要: Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 Å, such as less than about 5 Å as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained.
摘要翻译: 通过等离子体增强化学气相沉积(PECVD),使用包含含硅前体(例如硅烷),氩气和第二气体如氦气的工艺气体沉积具有低压缩应力和平滑拉伸硅膜的平滑硅膜, 氢或氦和氢的组合。 通过向工艺气体中加入掺杂剂源或含锗前体源可以获得掺杂的平滑硅膜和平滑硅锗膜。 在一些实施例中,在沉积期间使用包括高频(HF)和低频(LF)分量的双频等离子体等离子体,导致改善的膜粗糙度。 膜的特征在于通过原子力显微镜(AFM)测量的小于约等于小于约5埃的粗糙度(Ra)和绝对值小于约500MPa的压缩应力。 在一些实施方案中,获得平滑的拉伸硅膜。
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公开(公告)号:US08709551B2
公开(公告)日:2014-04-29
申请号:US12970853
申请日:2010-12-16
申请人: Keith Fox , Dong Niu , Joe Womack , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk , Jennifer O'Loughlin
发明人: Keith Fox , Dong Niu , Joe Womack , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk , Jennifer O'Loughlin
IPC分类号: C23C16/509 , C23C16/505 , C23C16/455 , C23C16/34 , C23C16/40 , C23C16/24 , H01L21/02 , H01L21/8229
CPC分类号: C23C16/505 , C23C16/24 , C23C16/345 , C23C16/402 , C23C16/4401 , C23C16/45523 , C23C16/509 , C23C16/54 , H01L21/02104 , H01L21/02123 , H01L21/02129 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02263 , H01L21/02274 , H01L21/0245 , H01L21/02507 , H01L21/02532 , H01L21/0254 , H01L21/6719 , H01L21/67201 , H01L21/67207 , H01L21/8229
摘要: Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 Å as measured on a silicon substrate.
摘要翻译: 描述了用于沉积超光滑含硅膜和膜堆的方法和硬件。 在一个实例中,公开了在等离子体增强化学气相沉积设备中在衬底上形成含硅膜的方法的实施例,该方法包括向等离子体增强化学气相沉积设备供应含硅反应物; 向等离子体增强化学气相沉积设备供应共反应物; 向等离子体增强化学气相沉积设备的处理站提供电容耦合等离子体,所述等离子体包括由含硅反应物产生的硅自由基和由共反应物产生的共反应物基团; 以及将所述含硅膜沉积在所述基底上,所述含硅膜的折射率在1.4和2.1之间,所述含硅膜还具有在硅衬底上测得的绝对粗糙度小于或等于4.5的值 。
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公开(公告)号:US08741394B2
公开(公告)日:2014-06-03
申请号:US12970846
申请日:2010-12-16
申请人: Jason Haverkamp , Pramod Subramonium , Joe Womack , Dong Niu , Keith Fox , John Alexy , Patrick Breiling , Jennifer O'Loughlin , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk
发明人: Jason Haverkamp , Pramod Subramonium , Joe Womack , Dong Niu , Keith Fox , John Alexy , Patrick Breiling , Jennifer O'Loughlin , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk
IPC分类号: H05H1/24
CPC分类号: C23C16/50 , C23C16/24 , C23C16/345 , C23C16/402 , C23C16/4401 , C23C16/45512 , C23C16/45523 , C23C16/45565 , C23C16/45574 , C23C16/509 , C23C16/52 , C23C16/54 , H01L21/02123 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/6719 , H01L21/67201 , H01L21/67207
摘要: Methods for depositing film stacks by plasma enhanced chemical vapor deposition are described. In one example, a method for depositing a film stack on a substrate, wherein the film stack includes films of different compositions and the deposition is performed in a process station in-situ, is provided. The method includes, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.
摘要翻译: 描述了通过等离子体增强化学气相沉积沉积膜堆叠的方法。 在一个实例中,提供了一种用于在基底上沉积薄膜叠层的方法,其中薄膜叠层包括不同组成的薄膜,并且沉淀是在原位进行的。 该方法包括在第一等离子体活化膜沉积阶段中,在衬底上沉积具有第一膜组成的第一层膜; 在第二等离子体激活沉积阶段中,在第一层膜上沉积具有第二膜组成的第二层膜; 以及在将等离子体的组成从第一等离子体激活膜沉积阶段转移到第二等离子体激活膜沉积阶段期间维持等离子体。
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公开(公告)号:US20110236600A1
公开(公告)日:2011-09-29
申请号:US12970853
申请日:2010-12-16
申请人: Keith Fox , Dong Niu , Joe Womack , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk , Jennifer O'Loughlin
发明人: Keith Fox , Dong Niu , Joe Womack , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk , Jennifer O'Loughlin
IPC分类号: H05H1/24
CPC分类号: C23C16/505 , C23C16/24 , C23C16/345 , C23C16/402 , C23C16/4401 , C23C16/45523 , C23C16/509 , C23C16/54 , H01L21/02104 , H01L21/02123 , H01L21/02129 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02263 , H01L21/02274 , H01L21/0245 , H01L21/02507 , H01L21/02532 , H01L21/0254 , H01L21/6719 , H01L21/67201 , H01L21/67207 , H01L21/8229
摘要: Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 Å as measured on a silicon substrate.
摘要翻译: 描述了用于沉积超光滑含硅膜和膜堆的方法和硬件。 在一个实例中,公开了在等离子体增强化学气相沉积设备中在衬底上形成含硅膜的方法的实施例,该方法包括向等离子体增强化学气相沉积设备供应含硅反应物; 向等离子体增强化学气相沉积设备供应共反应物; 向等离子体增强化学气相沉积设备的处理站提供电容耦合等离子体,所述等离子体包括由含硅反应物产生的硅自由基和由共反应物产生的共反应物基团; 以及将所述含硅膜沉积在所述基底上,所述含硅膜的折射率在1.4和2.1之间,所述含硅膜还具有在硅衬底上测得的绝对粗糙度小于或等于4.5的值 。
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公开(公告)号:US20110236594A1
公开(公告)日:2011-09-29
申请号:US12970846
申请日:2010-12-16
申请人: Jason Haverkamp , Pramod Subramonium , Joe Womack , Dong Niu , Keith Fox , John Alexy , Patrick Breiling , Jennifer O'Loughlin , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk
发明人: Jason Haverkamp , Pramod Subramonium , Joe Womack , Dong Niu , Keith Fox , John Alexy , Patrick Breiling , Jennifer O'Loughlin , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk
CPC分类号: C23C16/50 , C23C16/24 , C23C16/345 , C23C16/402 , C23C16/4401 , C23C16/45512 , C23C16/45523 , C23C16/45565 , C23C16/45574 , C23C16/509 , C23C16/52 , C23C16/54 , H01L21/02123 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/6719 , H01L21/67201 , H01L21/67207
摘要: Methods and hardware for depositing film stacks in a process tool in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a method for depositing, on a substrate, a film stack including films of different compositions in-situ in a process station using a plasma is described, the method including, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.
摘要翻译: 描述了用于在原位(即,没有真空断裂或空气曝光)在工艺工具中沉积薄膜叠层的方法和硬件。 在一个实例中,描述了一种在基板上使用等离子体在处理站中原位沉积包括不同组成的膜的膜堆叠的方法,所述方法包括在第一等离子体激活膜沉积阶段中沉积 在所述基板上具有第一膜组成的第一层膜; 在第二等离子体激活沉积阶段中,在第一层膜上沉积具有第二膜组成的第二层膜; 以及在将等离子体的组成从第一等离子体激活膜沉积阶段转移到第二等离子体激活膜沉积阶段期间维持等离子体。
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公开(公告)号:US20130171834A1
公开(公告)日:2013-07-04
申请号:US13671424
申请日:2012-11-07
申请人: Jason Haverkamp , Pramod Subramonium , Joe Womack , Dong Niu , Keith Fox , John Alexy , Patrick Breiling , Jennifer O'Loughlin , Mandyam Spiram , George Andrew Antonelli , Bart van Schravendijk
发明人: Jason Haverkamp , Pramod Subramonium , Joe Womack , Dong Niu , Keith Fox , John Alexy , Patrick Breiling , Jennifer O'Loughlin , Mandyam Spiram , George Andrew Antonelli , Bart van Schravendijk
IPC分类号: H01L21/02
CPC分类号: H01L21/0234 , C23C16/24 , C23C16/345 , C23C16/402 , C23C16/4401 , C23C16/45523 , C23C16/509 , C23C16/54 , H01L21/02123 , H01L21/02164 , H01L21/022 , H01L21/02274
摘要: Disclosed herein are methods of forming a film stack which may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Also disclosed herein are process station apparatuses for forming a film stack of silicon nitride and silicon oxide films which may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.
摘要翻译: 本文公开了形成膜堆叠的方法,其可以包括由含氮前体与含硅前体的反应形成的氮化硅膜的等离子体加速沉积,等离子体加速从处理室中显着消除含硅前体,等离子体 在由含硅前体与氧化剂的反应形成的氮化硅膜的顶部加速沉积氧化硅膜,并且等离子体加速了处理室中的氧化剂的显着消除。 本文还公开了用于形成氮化硅和氧化硅膜的膜堆叠的处理站装置,其可以包括处理室,一个或多个气体输送管线,一个或多个RF发生器,以及具有指令的机器可读介质的系统控制器 用于操作一个或多个气体输送管线和一个或多个RF发生器。
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