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公开(公告)号：US06667102B1
公开(公告)日：2003-12-23
申请号：US10130269
申请日：2002-05-24
申请人： Fabrice Amy , Christian Brylinski , Gérald Dujardin , Hanna Enriquez , Andrew Mayne , Patrick Soukiassian
发明人： Fabrice Amy , Christian Brylinski , Gérald Dujardin , Hanna Enriquez , Andrew Mayne , Patrick Soukiassian
IPC分类号： H01L2120
CPC分类号： H01L21/02532 , H01L21/02378 , H01L21/02381 , H01L21/02433 , H01L21/02609 , H01L21/049 , H01L29/045
摘要： A highly oxygen-sensitive silicon layer (2) is formed on a substrate (4) of, for example, SiC. The layer (2) has a 4×3 surface structure. The silicon layer (2) is deposited on a surface of the substrate (4) in a substantially uniform manner. The highly oxygen-sensitive silicon layer of the present invention may be used, for example in microelectronics.
摘要翻译： 在例如SiC的基板（4）上形成高氧敏感性的硅层（2）。 层（2）具有4×3的表面结构。 以基本均匀的方式将硅层（2）沉积在基板（4）的表面上。 本发明的高氧敏感性硅层可以用于例如微电子学中。
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2.发明授权Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer 失效大尺寸的单原子和单晶层，金刚石型碳，以及制造该层的方法公开(公告)号：US06924509B2
公开(公告)日：2005-08-02
申请号：US10947706
申请日：2004-09-23
CPC分类号： H01L29/1602 , C30B1/00 , C30B29/04 , C30B29/36 , C30B33/00 , H01L29/16 , Y10S117/902
摘要： Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer.According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2×2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C≡C (4) of sp configuration, into a plane of dimers C—C (8) of sp3 configuration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.
摘要翻译： 大尺寸的单原子和单晶层，金刚石型碳，以及制造该层的方法。 根据本发明，根据重建c（2x2），由碳原子平面终止的SiC中形成单晶衬底（2），并且进行至少一个退火，能够将该原子面转变为平面 的sp构型的二聚体C≡C（4）进入sp 3+配置的二聚体CC（8）的平面。 应用于微电子，光学，光电子学，微机电和生物材料。
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3.发明授权Very long and highly stable atomic wires, method for making these wires, application in nano-electronics 有权非常长，高稳定的原子线，制造这些线的方法，应用于纳米电子学公开(公告)号：US06274234B1
公开(公告)日：2001-08-14
申请号：US09319977
申请日：1999-06-14
IPC分类号： H01L2104
CPC分类号： H01L21/02 , B82Y10/00 , C30B29/36 , C30B29/605 , C30B33/00 , H01L51/0595 , Y10S977/712 , Y10S977/762 , Y10T428/24917 , Y10T428/265
摘要： Atomic wires of great length and great stability are formed on the surface of a SiC substrate as straight chains of dimers of an element chosen from amongst SiC and C. In order to produce same, layers of the element are formed on the surface and the assembly is constructed by means of annealings of the surface provided with the layers. The resulting wires have application to nanoelectronics.
摘要翻译： 在SiC衬底的表面上形成长度大且稳定性好的原子线，作为从SiC和C中选择的元素的二聚体的直链。为了制造相同的元件，在表面上形成元件层 通过提供有层的表面的退火构成。 所得到的电线应用于纳米电子学。
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4.发明申请Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer 失效大尺寸的单原子和单晶层，金刚石型碳，以及制造该层的方法公开(公告)号：US20050035380A1
公开(公告)日：2005-02-17
申请号：US10947706
申请日：2004-09-23
CPC分类号： H01L29/1602 , C30B1/00 , C30B29/04 , C30B29/36 , C30B33/00 , H01L29/16 , Y10S117/902
摘要： Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer. According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2x2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C≡C (4) of sp configuration, into a plane of dimers C-C (8) of sp3 configuration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.
摘要翻译： 大尺寸的单原子和单晶层，金刚石型碳，以及制造该层的方法。 根据本发明，根据重建c（2x2），由碳原子平面终止的SiC中形成单晶衬底（2），并且进行至少一个退火，能够将该原子面转变为平面 的sp构型的二聚体C = C（4）进入sp 3的二聚体CC（8）的平面。 应用于微电子，光学，光电子学，微机电和生物材料。
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