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16 条记录 (耗时 0.027 秒)

    SUBSTRATE, IN PARTICULAR MADE OF SILICON CARBIDE, COATED WITH A THIN STOICHIOMETRIC FILM OF SILICON NITRIDE, FOR MAKING ELECTRONIC COMPONENTS, AND METHOD FOR OBTAINING SUCH A FILM
    8.
    发明申请
    SUBSTRATE, IN PARTICULAR MADE OF SILICON CARBIDE, COATED WITH A THIN STOICHIOMETRIC FILM OF SILICON NITRIDE, FOR MAKING ELECTRONIC COMPONENTS, AND METHOD FOR OBTAINING SUCH A FILM 审中-公开
    用于制备电子元件的硅氮化硅薄膜包覆硅碳化物的衬底以及用于获得这种薄膜的方法

    公开(公告)号：US20100012949A1

    公开(公告)日：2010-01-21

    申请号：US11988284

    申请日：2006-07-04

    申请人： Patrick Soukiassian

    发明人： Patrick Soukiassian

    IPC分类号： H01L29/24 ,  H01L21/31

    CPC分类号： H01L21/049 ,  H01L29/1608 ,  H01L29/518

    摘要： Substrate, in particular in silicon carbide, covered by a thin film of stoichiometric silicon nitride, for the manufacture of electronic components and method for obtaining said film.To obtain the film on the substrate (1) in the presence of at least one nitrogen gas, the substrate is covered with a film (2) of a material that is permeable to said gas and the film of silicon nitride is capable of forming at the interface between the substrate and the film of the material. The invention applies for example to microelectronics.

    摘要翻译： 基板，特别是碳化硅，由化学计量的氮化硅薄膜覆盖，用于制造电子部件和获得所述膜的方法。 为了在存在至少一种氮气的情况下在基板（1）上获得薄膜，用可渗透所述气体的材料的膜（2）覆盖基板，并且氮化硅膜能够形成在 衬底和材料膜之间的界面。 本发明例如适用于微电子学。

    Nitridation of silicon and other semiconductors using alkali metal catalysts
    10.
    发明授权
    Nitridation of silicon and other semiconductors using alkali metal catalysts 失效
    使用碱金属催化剂对硅和其他半导体进行氮化

    公开(公告)号：US4735921A

    公开(公告)日：1988-04-05

    申请号：US55738

    申请日：1987-05-29

    申请人： Patrick Soukiassian

    发明人： Patrick Soukiassian

    IPC分类号： H01L21/318 ,  H01L21/363

    CPC分类号： H01L21/3185 ,  Y10S148/016 ,  Y10S438/903

    摘要： Nitride layers are formed on semiconductor substrates utilizing alkali metals as catalysts. The surface of the semiconductor substrate first has a thin layer of an alkali metal deposited thereon and then is exposed to nitrogen from a nitrogen source at temperatures and pressures sufficient to grow a nitride layer, which will generally occur at lower temperatures than required for nitride formation by conventional processes. The surface is then annealed and the catalyst removed by heating at moderate temperatures, desorbing the catalyst and leaving a nitride layer on the surface of the substrate which is uncontaminated by the alkali metal catalyst. The process is particularly suited to the formation of nitride layers on silicon utilizing essentially a monolayer of the alkali metal such as sodium. After formation of the nitride, heating of the substrate drives off essentially all of the catalyst at temperatures sufficiently low that the silicon substrate is not impaired for further processing steps, such as the formation of microelectronic devices.

    摘要翻译： 使用碱金属作为催化剂在半导体基板上形成氮化物层。 半导体衬底的表面首先具有沉积在其上的碱金属薄层，然后在足以生长氮化物层的温度和压力下从氮源暴露于氮气，氮化物层通常发生在低于氮化物形成所需的温度 通过常规方法。 然后将表面退火，并通过在中等温度下加热除去催化剂，解吸催化剂并在碱性金属催化剂未被污染的基材表面上留下氮化物层。 该方法特别适用于在硅上形成氮化物层，其基本上使用碱金属如钠的单层。 在形成氮化物之后，在足够低的温度下，基板的加热基本上驱除了所有催化剂，使得硅衬底不受损用于诸如形成微电子器件的进一步的处理步骤。