公开(公告)号：US08894868B2

公开(公告)日：2014-11-25

申请号：US13267813

申请日：2011-10-06

Applicant: Andy Hooper ,  Daragh Finn ,  Tim Webb ,  Lynn Sheehan ,  Kenneth Pettigrew ,  Yu Chong Tai

Inventor： Andy Hooper ,  Daragh Finn ,  Tim Webb ,  Lynn Sheehan ,  Kenneth Pettigrew ,  Yu Chong Tai

IPC: H01L21/302 ,  B23K26/00 ,  B44C1/22 ,  H01L21/306 ,  H01L21/3065 ,  B23K26/36 ,  B23K26/38 ,  B23K26/40 ,  H01L21/768

CPC classification number: B23K26/00 ,  B23K26/364 ,  B23K26/382 ,  B23K26/389 ,  B23K26/40 ,  B23K2101/35 ,  B23K2103/50 ,  B23K2103/52 ,  B44C1/22 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/76898 ,  Y10S438/94 ,  Y10T428/24273

Abstract: A method of forming an aperture (e.g., a through via, a blind via, a trench, an alignment feature, etc.) within a substrate includes irradiating a substrate with a laser beam to form a laser-machined feature having a sidewall. The laser-machined feature is then processed to change at least one characteristic (e.g., the sidewall surface roughness, diameter, taper, aspect ratio, cross-sectional profile, etc.) of the laser-machined feature. The laser-machined feature can be processed to form the aperture by performing an isotropic wet-etch process employing an etchant solution containing HNO3, HF and, optionally acetic acid.

Abstract translation: 在衬底内形成孔径（例如通孔，盲孔，沟槽，对准特征等）的方法包括用激光束照射衬底以形成具有侧壁的激光加工特征。 然后对激光加工的特征进行处理以改变激光加工特征的至少一个特征（例如，侧壁表面粗糙度，直径，锥度，纵横比，横截面轮廓等）。 可以通过使用含有HNO 3，HF和任选的乙酸的蚀刻剂溶液进行各向同性的湿蚀刻工艺来处理激光加工的特征以形成孔。

公开(公告)号：US20130089701A1

公开(公告)日：2013-04-11

申请号：US13267813

申请日：2011-10-06

Applicant: Andy Hooper ,  Daragh Finn ,  Tim Webb ,  Lynn Sheehan ,  Kenneth Pettigrew ,  Yu Chong Tai

Inventor： Andy Hooper ,  Daragh Finn ,  Tim Webb ,  Lynn Sheehan ,  Kenneth Pettigrew ,  Yu Chong Tai

IPC: B23K26/00 ,  B44C1/22 ,  H01L21/306 ,  B32B3/24

CPC classification number: B23K26/00 ,  B23K26/364 ,  B23K26/382 ,  B23K26/389 ,  B23K26/40 ,  B23K2101/35 ,  B23K2103/50 ,  B23K2103/52 ,  B44C1/22 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/76898 ,  Y10S438/94 ,  Y10T428/24273

Abstract: A method of forming an aperture (e.g., a through via, a blind via, a trench, an alignment feature, etc.) within a substrate includes irradiating a substrate with a laser beam to form a laser-machined feature having a sidewall. The laser-machined feature is then processed to change at least one characteristic (e.g., the sidewall surface roughness, diameter, taper, aspect ratio, cross-sectional profile, etc.) of the laser-machined feature. The laser-machined feature can be processed to form the aperture by performing an isotropic wet-etch process employing an etchant solution containing HNO3, HF and, optionally acetic acid.

Abstract translation: 在衬底内形成孔径（例如通孔，盲孔，沟槽，对准特征等）的方法包括用激光束照射衬底以形成具有侧壁的激光加工特征。 然后对激光加工的特征进行处理以改变激光加工特征的至少一个特征（例如，侧壁表面粗糙度，直径，锥度，纵横比，横截面轮廓等）。 可以通过使用含有HNO 3，HF和任选的乙酸的蚀刻剂溶液进行各向同性的湿蚀刻工艺来处理激光加工的特征以形成孔。

公开(公告)号：US07083880B2

公开(公告)日：2006-08-01

申请号：US10222734

申请日：2002-08-15

Applicant: Albert Alec Talin ,  Jeffrey H. Baker ,  William J. Dauksher ,  Andy Hooper ,  Douglas J. Resnick

Inventor： Albert Alec Talin ,  Jeffrey H. Baker ,  William J. Dauksher ,  Andy Hooper ,  Douglas J. Resnick

IPC: G03F1/00 ,  G03C5/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  C23C14/086 ,  G03F7/0002 ,  G03F7/0017 ,  G03F7/093

Abstract: This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), a transparent conductive layer (16) formed on a surface (14) of the substrate (12) by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer (20) formed on a surface (18) of the transparent conductive layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (30).

Abstract translation: 本发明涉及半导体器件，微电子器件，微电子机械器件，微流体器件，光子器件，更具体地涉及光刻模板，形成光刻模板的方法和用光刻模板形成器件的方法。 光刻模板（10）形成为具有基板（12），通过低压溅射形成在基板（12）的表面（14）上的透明导电层（16）至允许优选90％透射率的厚度 紫外光，以及形成在透明导电层（16）的表面（18）上的图形层（20）。 模板（10）用于通过将模板（10）定位成紧邻其上形成有辐射敏感材料的半导体器件（30）而影响器件（30）中的图案的半导体器件（30）的制造，以及 施加压力以使辐射敏感材料流入存在于模板上的浮雕图像。 然后通过模板施加辐射，以便固化辐射敏感材料的部分并限定辐射敏感材料中的图案。 然后移除模板（10）以完成半导体器件（30）的制造。

公开(公告)号：US20120168412A1

公开(公告)日：2012-07-05

申请号：US13343640

申请日：2012-01-04

Applicant: Andy HOOPER

Inventor： Andy HOOPER

IPC: B23K26/36

CPC classification number: B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/70 ,  B23K2101/35 ,  B23K2103/50

Abstract: A method of forming an aperture in a substrate having a first side and a second side opposite the first side includes irradiating the substrate with a laser beam to form a laser-machined feature within the substrate and having a sidewall. The sidewall is etched with an etchant to change at least one characteristic of the laser-machined feature. The etching can include introducing the etchant into the laser-machined feature from the first side and the second side of the substrate. An apparatus and system for forming an aperture are also disclosed.

Abstract translation: 在具有第一侧和与第一侧相对的第二侧的衬底中形成孔的方法包括用激光束照射衬底，以在衬底内形成具有侧壁的激光加工特征。 用蚀刻剂蚀刻侧壁以改变激光加工特征的至少一个特征。 蚀刻可以包括将蚀刻剂从衬底的第一侧和第二侧引入到激光加工的特征中。 还公开了一种用于形成孔的装置和系统。

公开(公告)号：US07432024B2

公开(公告)日：2008-10-07

申请号：US11423621

申请日：2006-06-12

Applicant: Albert Alec Talin ,  Jeffrey H. Baker ,  William J. Dauksher ,  Andy Hooper ,  Douglas J. Resnick

Inventor： Albert Alec Talin ,  Jeffrey H. Baker ,  William J. Dauksher ,  Andy Hooper ,  Douglas J. Resnick

IPC: G03F1/00 ,  G03C5/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  C23C14/086 ,  G03F7/0002 ,  G03F7/0017 ,  G03F7/093

Abstract: This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), a transparent conductive layer (16) formed on a surface (14) of the substrate (12) by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer (20) formed on a surface (18) of the transparent conductive layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (30).

Abstract translation: 本发明涉及半导体器件，微电子器件，微电子机械器件，微流体器件，光子器件，更具体地涉及光刻模板，形成光刻模板的方法和用光刻模板形成器件的方法。 光刻模板（10）形成为具有基板（12），通过低压溅射形成在基板（12）的表面（14）上的透明导电层（16）至允许优选90％透射率的厚度 紫外光，以及形成在透明导电层（16）的表面（18）上的图形层（20）。 模板（10）用于通过将模板（10）定位成紧邻其上形成有辐射敏感材料的半导体器件（30）而影响器件（30）中的图案的半导体器件（30）的制造，以及 施加压力以使辐射敏感材料流入存在于模板上的浮雕图像。 然后通过模板施加辐射，以便固化辐射敏感材料的部分并限定辐射敏感材料中的图案。 然后移除模板（10）以完成半导体器件（30）的制造。

公开(公告)号：US20060222968A1

公开(公告)日：2006-10-05

申请号：US11423621

申请日：2006-06-12

Applicant: Albert Talin ,  Jeffrey Baker ,  William Dauksher ,  Andy Hooper ,  Douglas Resnick

Inventor： Albert Talin ,  Jeffrey Baker ,  William Dauksher ,  Andy Hooper ,  Douglas Resnick

IPC: G03C5/00 ,  G03F1/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  C23C14/086 ,  G03F7/0002 ,  G03F7/0017 ,  G03F7/093

Abstract: This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), a transparent conductive layer (16) formed on a surface (14) of the substrate (12) by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer (20) formed on a surface (18) of the transparent conductive layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (30).

Abstract translation: 本发明涉及半导体器件，微电子器件，微电子机械器件，微流体器件，光子器件，更具体地涉及光刻模板，形成光刻模板的方法和用光刻模板形成器件的方法。 光刻模板（10）形成为具有基板（12），通过低压溅射形成在基板（12）的表面（14）上的透明导电层（16）至允许优选90％透射率的厚度 紫外光，以及形成在透明导电层（16）的表面（18）上的图形层（20）。 模板（10）用于通过将模板（10）定位成紧邻其上形成有辐射敏感材料的半导体器件（30）而影响器件（30）中的图案的半导体器件（30）的制造，以及 施加压力以使辐射敏感材料流入存在于模板上的浮雕图像。 然后通过模板施加辐射，以便固化辐射敏感材料的部分并限定辐射敏感材料中的图案。 然后移除模板（10）以完成半导体器件（30）的制造。

公开(公告)号：US20060024970A1

公开(公告)日：2006-02-02

申请号：US10901589

申请日：2004-07-29

Applicant: Steven Smith ,  Diana Convey ,  Andy Hooper ,  Yi Wei

Inventor： Steven Smith ,  Diana Convey ,  Andy Hooper ,  Yi Wei

IPC: H01L21/461

CPC classification number: H01L21/02052 ,  H01L21/02046 ,  Y10S438/906

Abstract: A method for preparing a semiconductor substrate surface (28) for semiconductor device fabrication, includes providing a semiconductor substrate (20) having a pure Ge surface layer (28) or a Ge-containing surface layer (12), such as SiGe. The semiconductor substrate (20) is cleaned using a first oxygen plasma process (14) to remove foreign matter (30) from the surface (28) of the substrate (20). The substrate surface (28) is next immersed in a hydrochloric acid solution (16) to remove additional foreign matter (30) from the surface (28) of the substrate (20). The immersion step is followed by a second oxygen plasma etch process (18), passivate the surface with a passivation layer (34), and provide for an atomically smooth surface for subsequent epitaxial or gate dielectric growth.