公开(公告)号：US09147554B2

公开(公告)日：2015-09-29

申请号：US12826050

申请日：2010-06-29

Applicant: Andy Ray

Inventor： Andy Ray

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/20

CPC classification number: H01J37/3171 ,  H01J37/1472 ,  H01J37/20 ,  H01J2237/20228 ,  H01J2237/24542

Abstract: An ion implantation system includes a beamline configured to direct an ion beam toward an end station configured to hold or support a workpiece, and a scanning system. The scanning system is configured to scan the end station past the ion beam in a two-dimensional fashion comprising a first scan axis along a first direction and a second scan axis along a second direction that is different than the first direction. The system further includes a supplemental scanning component operably associated with the scanning system, and configured to effectuate a scanning of the ion beam with respect to the end station along a third scan axis having a third direction that is different than the first direction.

Abstract translation: 离子注入系统包括被配置为将离子束朝向构造成保持或支撑工件的终端站引导的束线以及扫描系统。 扫描系统被配置为以二维方式扫描终端站，其包括沿着第一方向的第一扫描轴和沿着与第一方向不同的第二方向的第二扫描轴。 该系统还包括与扫描系统可操作地相关联的补充扫描部件，并且被配置为沿着具有不同于第一方向的第三方向的第三扫描轴实现相对于终端站的离子束的扫描。

公开(公告)号：US08278634B2

公开(公告)日：2012-10-02

申请号：US12796215

申请日：2010-06-08

Applicant: Bo H. Vanderberg ,  Steven C. Hays ,  Andy Ray

Inventor： Bo H. Vanderberg ,  Steven C. Hays ,  Andy Ray

IPC: H01J37/317

CPC classification number: H01J37/317 ,  H01J37/147 ,  H01J37/244 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/006 ,  H01J2237/182 ,  H01J2237/24542

Abstract: A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.

Abstract translation: 本文提供了将注入的气体（例如，氩，氙）引入到包括磁扫描器的束线区域中的方法。 注入的气体通过增强（例如，增加，减少）磁离子束的电荷中和（例如，扫描磁场不为零的区域处的离子束）来改善束流，从而减少由于零场导致的电流损耗 效果（ZFE）。 通过减小具有磁场的区域中的电流损耗，磁束电流增加（例如，在磁场不为零的区域中，束电流增加）在整个扫描中以均匀的方式提高整个束电流 路径，从而减少ZFE的影响。 换句话说，ZFE通过磁化束电流的增加有效地最小化而被去除。

公开(公告)号：US20100308215A1

公开(公告)日：2010-12-09

申请号：US12796215

申请日：2010-06-08

Applicant: Bo H. Vanderberg ,  Steven C. Hays ,  Andy Ray

Inventor： Bo H. Vanderberg ,  Steven C. Hays ,  Andy Ray

IPC: H01J37/317 ,  H01J3/32 ,  H01J37/147 ,  H01J49/26

CPC classification number: H01J37/317 ,  H01J37/147 ,  H01J37/244 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/006 ,  H01J2237/182 ,  H01J2237/24542

Abstract: A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.

Abstract translation: 本文提供了将注入的气体（例如，氩，氙）引入到包括磁扫描器的束线区域中的方法。 注入的气体通过增强（例如，增加，减少）磁离子束的电荷中和（例如，扫描磁场不为零的区域处的离子束）来改善束流，从而减少由于零场导致的电流损耗 效果（ZFE）。 通过减小具有磁场的区域中的电流损耗，磁束电流增加（例如，在磁场不为零的区域中，束电流增加）在整个扫描中以均匀的方式提高整个束电流 路径，从而减少ZFE的影响。 换句话说，ZFE通过磁化束电流的增加有效地最小化而被去除。

公开(公告)号：US20120248326A1

公开(公告)日：2012-10-04

申请号：US13077112

申请日：2011-03-31

Applicant: Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

Inventor： Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

IPC: H01J3/14 ,  G21K5/10

CPC classification number: H01J37/3171 ,  G21K5/02 ,  G21K5/04 ,  G21K5/10 ,  H01J37/302 ,  H01J2237/30483

Abstract: One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.

Abstract translation: 一个实施例涉及一种离子注入机。 离子注入机包括用于产生离子束的离子源以及沿着第一轴沿着工件的表面扫描离子束的扫描仪。 离子注入机还包括在扫描器下游的偏转滤波器，以沿着第二轴度将离子束沿工件的表面抖动扫描。

公开(公告)号：US08378313B2

公开(公告)日：2013-02-19

申请号：US13077112

申请日：2011-03-31

Applicant: Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

Inventor： Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

IPC: H01J3/26 ,  H01J37/147

CPC classification number: H01J37/3171 ,  G21K5/02 ,  G21K5/04 ,  G21K5/10 ,  H01J37/302 ,  H01J2237/30483

Abstract: One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.

Abstract translation: 一个实施例涉及一种离子注入机。 离子注入机包括用于产生离子束的离子源以及沿着第一轴沿着工件的表面扫描离子束的扫描仪。 离子注入机还包括在扫描器下游的偏转滤波器，以沿着第二轴度将离子束沿工件的表面抖动扫描。

公开(公告)号：US20110001059A1

公开(公告)日：2011-01-06

申请号：US12826050

申请日：2010-06-29

Applicant: Andy Ray

Inventor： Andy Ray

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/20

CPC classification number: H01J37/3171 ,  H01J37/1472 ,  H01J37/20 ,  H01J2237/20228 ,  H01J2237/24542

Abstract: An ion implantation system includes a beamline configured to direct an ion beam toward an end station configured to hold or support a workpiece, and a scanning system. The scanning system is configured to scan the end station past the ion beam in a two-dimensional fashion comprising a first scan axis along a first direction and a second scan axis along a second direction that is different than the first direction. The system further includes a supplemental scanning component operably associated with the scanning system, and configured to effectuate a scanning of the ion beam with respect to the end station along a third scan axis having a third direction that is different than the first direction.

Abstract translation: 离子注入系统包括被配置为将离子束朝向构造成保持或支撑工件的终端站引导的束线以及扫描系统。 扫描系统被配置为以二维方式扫描终端站，其包括沿着第一方向的第一扫描轴和沿着与第一方向不同的第二方向的第二扫描轴。 该系统还包括与扫描系统可操作地相关联的补充扫描部件，并且被配置为沿着具有不同于第一方向的第三方向的第三扫描轴实现相对于终端站的离子束的扫描。

公开(公告)号：USD430312S

公开(公告)日：2000-08-29

申请号：US115032

申请日：1999-12-06

Applicant: Andy Ray Beachy

Designer： Andy Ray Beachy

公开(公告)号：USD424217S

公开(公告)日：2000-05-02

申请号：US102008

申请日：1999-03-16

Applicant: Andy Ray Beachy

Designer： Andy Ray Beachy