Devices having anisotropic conductivity heatsinks, and methods of making thereof
    1.
    发明授权
    Devices having anisotropic conductivity heatsinks, and methods of making thereof 有权
    具有各向异性导电性散热片的装置及其制造方法

    公开(公告)号:US08537553B2

    公开(公告)日:2013-09-17

    申请号:US13071015

    申请日:2011-03-24

    IPC分类号: H05K7/20

    摘要: In accordance with an embodiment of the present invention, a device includes a circuit board with a thermally conductive core layer and a chip disposed over the circuit board. The device further includes a heat sink disposed over the chip. The thermal conductivity of the heat sink along a first direction is larger than a thermal conductivity along a second direction. The first direction is perpendicular to the second direction. The heat sink is thermally coupled to the thermally conductive core layer.

    摘要翻译: 根据本发明的实施例,一种器件包括具有导热芯层的电路板和设置在电路板上的芯片。 该装置还包括设置在芯片上的散热器。 沿着第一方向的散热器的热导率大于沿着第二方向的热导率。 第一方向垂直于第二方向。 散热器热耦合到导热芯层。

    Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
    3.
    发明授权
    Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding 有权
    发光器件和适用于倒装芯片接合的发光器件的倒装片接合

    公开(公告)号:US06888167B2

    公开(公告)日:2005-05-03

    申请号:US10185252

    申请日:2002-06-27

    摘要: Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

    摘要翻译: 通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料,并将其安装在基板上,并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上, 发光器件死到底座。 选择导电芯片附着材料的预定图案,以便当发光器件裸片安装到底座时,防止导电芯片附着材料接触具有相反导电类型的区域。 导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。 还提供具有预定图案的导电芯片附着材料的发光器件裸片。 在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中 级环氧树脂。 还提供了具有B级可固化模具环氧树脂的发光器件模具。

    Flip-chip bonding of light emitting devices
    4.
    发明授权
    Flip-chip bonding of light emitting devices 有权
    发光器件的倒装键合

    公开(公告)号:US07259033B2

    公开(公告)日:2007-08-21

    申请号:US10920101

    申请日:2004-08-17

    IPC分类号: H01L21/00 H01L21/50

    摘要: Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

    摘要翻译: 通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料,并将其安装在基板上,并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上, 发光器件死到底座。 选择导电芯片附着材料的预定图案,以便当发光器件裸片安装到底座时,防止导电芯片附着材料接触具有相反导电类型的区域。 导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。 还提供具有预定图案的导电芯片附着材料的发光器件裸片。 在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中 级环氧树脂。 还提供了具有B级可固化模具环氧树脂的发光器件模具。

    Devices Having Anisotropic Conductivity Heatsinks, and Methods of Making Thereof
    7.
    发明申请
    Devices Having Anisotropic Conductivity Heatsinks, and Methods of Making Thereof 有权
    具有各向异性电导率散热器的设备及其制造方法

    公开(公告)号:US20120206882A1

    公开(公告)日:2012-08-16

    申请号:US13071015

    申请日:2011-03-24

    IPC分类号: H05K7/20 H01L21/50

    摘要: In accordance with an embodiment of the present invention, a device includes a circuit board with a thermally conductive core layer and a chip disposed over the circuit board. The device further includes a heat sink disposed over the chip. The thermal conductivity of the heat sink along a first direction is larger than a thermal conductivity along a second direction. The first direction is perpendicular to the second direction. The heat sink is thermally coupled to the thermally conductive core layer.

    摘要翻译: 根据本发明的实施例,一种器件包括具有导热芯层的电路板和设置在电路板上的芯片。 该装置还包括设置在芯片上的散热器。 沿着第一方向的散热器的热导率大于沿着第二方向的热导率。 第一方向垂直于第二方向。 散热器热耦合到导热芯层。

    Light emitting devices suitable for flip-chip bonding
    9.
    发明授权
    Light emitting devices suitable for flip-chip bonding 有权
    适用于倒装芯片贴装的发光器件

    公开(公告)号:US07608860B2

    公开(公告)日:2009-10-27

    申请号:US11772419

    申请日:2007-07-02

    IPC分类号: H01L29/267

    摘要: Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

    摘要翻译: 通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料,并将其安装在基板上,并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上, 发光器件死到底座。 选择导电芯片附着材料的预定图案,以便当发光器件裸片安装到底座时,防止导电芯片附着材料接触具有相反导电类型的区域。 导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。 还提供具有预定图案的导电芯片附着材料的发光器件裸片。 在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中 级环氧树脂。 还提供了具有B级可固化模具环氧树脂的发光器件模具。

    LIGHT EMITTING DEVICES SUITABLE FOR FLIP-CHIP BONDING
    10.
    发明申请
    LIGHT EMITTING DEVICES SUITABLE FOR FLIP-CHIP BONDING 有权
    适用于片芯接合的发光装置

    公开(公告)号:US20070241360A1

    公开(公告)日:2007-10-18

    申请号:US11772419

    申请日:2007-07-02

    IPC分类号: H01L33/00

    摘要: Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

    摘要翻译: 通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料,并将其安装在基板上,并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上, 发光器件死到底座。 选择导电芯片附着材料的预定图案,以便当发光器件裸片安装到底座时,防止导电芯片附着材料接触具有相反导电类型的区域。 导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。 还提供具有预定图案的导电芯片附着材料的发光器件裸片。 在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中 级环氧树脂。 还提供了具有B级可固化模具环氧树脂的发光器件模具。