DETECTOR FOR DUAL BAND ULTRAVIOLET DETECTION
    3.
    发明申请
    DETECTOR FOR DUAL BAND ULTRAVIOLET DETECTION 审中-公开
    双线超声检测器检测器

    公开(公告)号:US20100012849A1

    公开(公告)日:2010-01-21

    申请号:US12176717

    申请日:2008-07-21

    Abstract: The invention concerns a single detector with two designable wavelengths and bandwidths for ultraviolet detection based on n−/n+-GaN and AlGaN structures grown over sapphire substrates. The detector has several layers grown over a sapphire substrates, including a buffer layer comprising AlN; a first band-edge comprising AlXGa1-XN; a second band-edge comprising AlYGa1-YN; a third band-edge comprising AlZGa1-ZN. The detector also has ohmic contacts formed on the AlXGa1-XN band-edge. A bias voltage is applied to the detector through the ohmic contacts so as to select a range of wavelengths in the UV region of interest.

    Abstract translation: 本发明涉及一种基于在蓝宝石衬底上生长的n / n + -GaN和AlGaN结构进行紫外检测的具有两个可设计波长和带宽的单个检测器。 检测器具有在蓝宝石衬底上生长的几层,包括包含AlN的缓冲层; 包括AlXGa1-XN的第一带边; 包括AlYGa1-YN的第二带边; 包括AlZGa1-ZN的第三带边。 检测器还具有形成在AlXGa1-XN带边上的欧姆接触。 通过欧姆接触将偏置电压施加到检测器,以便选择感兴趣的UV区域中的波长范围。

    DETECTOR FOR DUAL BAND ULTRAVIOLET DETECTION
    8.
    发明申请
    DETECTOR FOR DUAL BAND ULTRAVIOLET DETECTION 审中-公开
    双线超声检测器检测器

    公开(公告)号:US20110284756A1

    公开(公告)日:2011-11-24

    申请号:US13092198

    申请日:2011-04-22

    Abstract: The invention concerns a single detector with two designable wavelengths and bandwidths for ultraviolet detection based on n−/n+-GaN and AlGaN structures grown over sapphire substrates. The detector has several layers grown over a sapphire substrates, including a buffer layer comprising AlN; a first band-edge comprising AlX Ga1-X N; a second band-edge comprising AlYGa1-Y N; a third band-edge comprising AlZ Ga1-Z N. The detector also has ohmic contacts formed on the AlX Ga1-X N band-edge. A bias voltage is applied to the detector through the ohmic contacts so as to select a range of wavelengths in the UV region of interest.

    Abstract translation: 本发明涉及一种基于在蓝宝石衬底上生长的n / n + -GaN和AlGaN结构进行紫外检测的具有两个可设计波长和带宽的单个检测器。 检测器具有在蓝宝石衬底上生长的几层,包括包含AlN的缓冲层; 包含AlX Ga1-XN的第一带边; 包括AlYGa1-YN的第二带边; 包括AlZ Ga1-ZN的第三带边。检测器还具有形成在AlX Ga1-XN带边缘上的欧姆接触。 通过欧姆接触将偏置电压施加到检测器,以便选择感兴趣的UV区域中的波长范围。

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