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    Image Sensor Applying Power Voltage to Backside of Semiconductor Substrate and Method of Manufacturing Image Sensor
    1.
    发明申请
    Image Sensor Applying Power Voltage to Backside of Semiconductor Substrate and Method of Manufacturing Image Sensor 审中-公开
    图像传感器将电源电压施加到半导体基板的背面和制造图像传感器的方法

    公开(公告)号：US20070257282A1

    公开(公告)日：2007-11-08

    申请号：US11672866

    申请日：2007-02-08

    申请人： Yo-han Sun ,  Jong-jin Lee ,  Bum-suk Kim ,  Yun-ho Jang ,  Sae-young Kim ,  Keun-chan Yuk ,  Getman Alexander

    发明人： Yo-han Sun ,  Jong-jin Lee ,  Bum-suk Kim ,  Yun-ho Jang ,  Sae-young Kim ,  Keun-chan Yuk ,  Getman Alexander

    IPC分类号： H01L27/148 ,  H01L21/339

    CPC分类号： H01L27/14601 ,  H01L27/14687

    摘要： An image sensor applying a power voltage to a backside of a semiconductor substrate includes a first type semiconductor substrate, a first type semiconductor layer formed on the first type semiconductor substrate, a second type semiconductor layer formed on the first type semiconductor layer, and a power voltage receiver formed on a backside of the first type semiconductor substrate opposite the first type semiconductor layer with respect to the first type semiconductor substrate, wherein the power voltage receiver receives a power voltage from outside and applies the power voltage to the first type semiconductor substrate.

    摘要翻译： 将电源电压施加到半导体衬底的背面的图像传感器包括第一类型半导体衬底，形成在第一类型半导体衬底上的第一类型半导体层，形成在第一类型半导体层上的第二类型半导体层，以及功率 所述电压接收器相对于所述第一类型半导体衬底形成在与所述第一类型半导体层相对的所述第一类型半导体衬底的背面上，其中所述电力电压接收器从外部接收电力电压并将所述电力电压施加到所述第一类型半导体衬底。

    Solid-state image sensing device including anti-reflection structure including polysilicon and method of manufacturing the same
    2.
    发明授权
    Solid-state image sensing device including anti-reflection structure including polysilicon and method of manufacturing the same 有权
    包括多晶硅的抗反射结构的固态图像感测装置及其制造方法

    公开(公告)号：US07709919B2

    公开(公告)日：2010-05-04

    申请号：US11679614

    申请日：2007-02-27

    申请人： Getman Alexander ,  Bum-suk Kim ,  Yun-ho Jang ,  Sae-young Kim

    发明人： Getman Alexander ,  Bum-suk Kim ,  Yun-ho Jang ,  Sae-young Kim

    IPC分类号： H01L31/0216

    CPC分类号： H01L27/1462 ,  G02B1/11 ,  H01L27/14685 ,  H01L31/0203

    摘要： A solid-state image sensing device including an anti-reflection structure that uses polysilicon and a method of manufacturing the same, in which the solid-state image sensing device includes a photodiode region and a transistor region. The photodiode region includes a semiconductor substrate, a first anti-refection layer, a second anti-reflection layer, and a top layer. The first anti-reflection layer is formed on the semiconductor substrate, and the second anti-reflection layer is formed on the first anti-reflection layer. The top layer is formed on the second anti-reflection layer. Each of the semiconductor substrate and the second anti-reflection layer is formed of a first material, and each of the first anti-reflection layer and the top layer is formed of a second material different from the first material.

    摘要翻译： 包括使用多晶硅的抗反射结构的固态图像感测装置及其制造方法，其中固态图像感测装置包括光电二极管区域和晶体管区域。 光电二极管区域包括半导体衬底，第一抗反射层，第二抗反射层和顶层。 第一防反射层形成在半导体衬底上，第二抗反射层形成在第一抗反射层上。 顶层形成在第二防反射层上。 半导体衬底和第二抗反射层中的每一个由第一材料形成，并且第一抗反射层和顶层中的每一个由与第一材料不同的第二材料形成。

    SOLID-STATE IMAGE SENSING DEVICE INCLUDING ANTI-REFLECTION STRUCTURE INCLUDING POLYSILICON AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    SOLID-STATE IMAGE SENSING DEVICE INCLUDING ANTI-REFLECTION STRUCTURE INCLUDING POLYSILICON AND METHOD OF MANUFACTURING THE SAME 有权
    包括多晶硅抗反射结构的固态图像感测装置及其制造方法

    公开(公告)号：US20070201137A1

    公开(公告)日：2007-08-30

    申请号：US11679614

    申请日：2007-02-27

    申请人： Getman Alexander ,  Bum-suk Kim ,  Yun-ho Jang ,  Sae-young Kim

    发明人： Getman Alexander ,  Bum-suk Kim ,  Yun-ho Jang ,  Sae-young Kim

    IPC分类号： G02B1/10

    CPC分类号： H01L27/1462 ,  G02B1/11 ,  H01L27/14685 ,  H01L31/0203

    摘要： A solid-state image sensing device including an anti-reflection structure that uses polysilicon and a method of manufacturing the same, in which the solid-state image sensing device includes a photodiode region and a transistor region. The photodiode region includes a semiconductor substrate, a first anti-refection layer, a second anti-reflection layer, and a top layer. The first anti-reflection layer is formed on the semiconductor substrate, and the second anti-reflection layer is formed on the first anti-reflection layer. The top layer is formed on the second anti-reflection layer. Each of the semiconductor substrate and the second anti-reflection layer is formed of a first material, and each of the first anti-reflection layer and the top layer is formed of a second material different from the first material.

    摘要翻译： 包括使用多晶硅的抗反射结构的固态图像感测装置及其制造方法，其中固态图像感测装置包括光电二极管区域和晶体管区域。 光电二极管区域包括半导体衬底，第一抗反射层，第二抗反射层和顶层。 第一防反射层形成在半导体衬底上，第二抗反射层形成在第一抗反射层上。 顶层形成在第二防反射层上。 半导体衬底和第二抗反射层中的每一个由第一材料形成，并且第一抗反射层和顶层中的每一个由与第一材料不同的第二材料形成。

    COLOR FILTER LAYER HAVING COLOR DECISION LAYER, IMAGE SENSING DEVICE HAVING THE SAME, AND METHOD OF FORMING COLOR FILTER LAYER
    5.
    发明申请
    COLOR FILTER LAYER HAVING COLOR DECISION LAYER, IMAGE SENSING DEVICE HAVING THE SAME, AND METHOD OF FORMING COLOR FILTER LAYER 审中-公开
    具有颜色决定层的彩色滤光层，具有该颜色决定层的图像感测装置以及形成彩色滤光层的方法

    公开(公告)号：US20070134474A1

    公开(公告)日：2007-06-14

    申请号：US11608674

    申请日：2006-12-08

    申请人： Jung-Chak Ahn ,  Bum-suk Kim ,  Yun-ho Jang ,  Sae-young Kim

    发明人： Jung-Chak Ahn ,  Bum-suk Kim ,  Yun-ho Jang ,  Sae-young Kim

    IPC分类号： B32B7/02

    CPC分类号： G02B5/22 ,  Y10T428/24942

    摘要： A color filter layer for use in an image sensing device includes first inorganic layers, each first inorganic layer having a first refractive index, and second inorganic layers, each second inorganic layer having a second refractive index, wherein the second refractive index is higher than the first refractive index, wherein the first and second inorganic layers are stacked on an optical sensor provided in the image sensing device to form a multi-layer, and the multi-layer includes fixed thickness layers each having a fixed thickness and a color decision layer having a thickness determined according to a wavelength band of light to be passed.

    摘要翻译： 用于图像感测装置的滤色器层包括第一无机层，每个第一无机层具有第一折射率，第二无机层，每个第二无机层具有第二折射率，其中第二折射率高于 第一折射率，其中第一和第二无机层堆叠在设置在图像感测装置中的光学传感器上以形成多层，并且多层包括各自具有固定厚度的固定厚度层和具有固定厚度的颜色判定层， 根据要通过的光的波长带确定的厚度。

    CMOS image sensor with pocket photodiode for minimizng image lag
    7.
    发明申请
    CMOS image sensor with pocket photodiode for minimizng image lag 失效
    具有袖珍光电二极管的CMOS图像传感器，用于最小化图像滞后

    公开(公告)号：US20080179642A1

    公开(公告)日：2008-07-31

    申请号：US11983913

    申请日：2007-11-13

    申请人： Kyung-ho Lee ,  Yi-tae Kim ,  Jung-chak Ahn ,  Sae-young Kim

    发明人： Kyung-ho Lee ,  Yi-tae Kim ,  Jung-chak Ahn ,  Sae-young Kim

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14689 ,  H01L31/035281

    摘要： A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type. The floating diffusion region is of a second conductivity type. The transfer transistor has a channel region disposed between the photosensitive device and the floating diffusion region. The pocket photodiode is of the second conductivity type and is formed under a first portion of a bottom surface of the channel region such that a second portion of the bottom surface of the channel region abuts the semiconductor substrate.

    摘要翻译： CMOS图像传感器包括形成在第一导电类型的半导体衬底中的感光器件，浮动扩散区域，转移晶体管和腔室光电二极管。 浮动扩散区域是第二导电类型。 转移晶体管具有设置在感光器件和浮动扩散区域之间的沟道区域。 袋状光电二极管是第二导电类型，并且形成在沟道区的底表面的第一部分下方，使得沟道区的底表面的第二部分与半导体衬底相邻。